Graphical Lead-free Cs 2 AgBiBr 6- x Cl x ( x =0, 0.2, 0.4, 0.6, 0.8, 1.0) perovskite films were synthesized and characterized. The ITO/Cs 2 AgBiBr 6- x Cl x /Al devices were fabricated to investigate the memristive behaviors. As the chloride content increases, the ON/OFF ratio of the device increases from 10 3 to 10 4 , the average V SET and the V RESET decrease from −0.40 V to −0.21 V and from 1.55 V to 1.34 V, respectively. Resistance states of devices can be maintained after 100 switching cycles and 10 4 s of reading. Mixed halide perovskites are promising memristive materials because of their excellent electronic-ionic properties. In this work, lead-free Cs 2 AgBiBr 6- x Cl x ( x =0, 0.2, 0.4, 0.6, 0.8, 1.0) double perovskite films were fabricated using a one-step solution spin-coating method in air. Moreover, the ITO/Cs 2 AgBiBr 6- x Cl x /Al sandwich-like devices are fabricated to investigate the memristive behaviors. The present memristors exhibit nonvolatile and bipolar resistive switching behaviors without electroforming process. Interestingly, as the chloride content increases, the ON/OFF ratio of the device increases from 10 3 to 10 4 , the average SET voltage and the RESET voltage decrease from −0.40 V to −0.21 V and from 1.55 V to 1.34 V, respectively. In addition, resistance states of devices can be maintained after 100 switching cycles and 10 4 s of reading. This study provides new possibility for the development of low-power and environmentally friendly memristors.
Qi Shao,Jun Yan,Weiqiang Gong,Yan Li,Feng Gao,Baoning Wang,Lin Li
Inorganic double perovskites have been widely used in photodetection and X-ray detection due to their nontoxic composition, large atomic number, and simple crystal growth from solution. However, double perovskites have a lower formation energy, which introduces additional antisite defects, resulting in a higher trap-state density. Here we report dopant-compensated double perovskite Cs2AgBiBr6−xClx single crystals (SCs) based on solution processing, which reduces the trap state density of the single crystals, enabling enhanced photodetection and ray detection capabilities of the device at room temperature. The dopant-compensated Cs2AgBiBr5.933Cl0.067 has a significantly improved mobility of 129 cm2 V−1 s−1. By using Cl ion doping, the Cs2AgBiBr5.933Cl0.067 SCs achieve excellent device performance in photodetection and X-ray detection, including a broad spectral response, a high responsivity of 60.8 mA W−1, a fast response time of 8 μs/566 μs, a superior X-ray detection sensitivity of 714 μC Gyair−1 cm−2, and a minimum dose rate as low as 36.48 nGyair s−1. Furthermore, the device exhibits high-fidelity photo-imaging at 5 V. All results demonstrate that an effective Cl ion doping strategy provides a great opportunity for developing functional detection devices.
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