Scientific Reports
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2022
·Vol. 12
·期 1
·1-8
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IF 4.996
Wu Junsheng,Zhao Zhuo,Zhou Yanwen
Tin-based perovskite material is the best choice to replace heavy metal element lead during the last several years. Cs 2 SnI 6 with Sn 4+ is a fascinating optoelectronic material, which is a more air-stable composite cesium tin halide peroxide variant from CsSnI 3 . However, the optoelectronic performance between N and P type of Cs 2 SnI 6 varies considerably. Herein, we synthesized uniform Cs 2 SnI 6 by modified two-step method, which thermal evaporated CsI firstly, and followed annealing in the SnI 4 and I 2 vapor at 150 °C resulted in uniform Cs 2 SnI 6 films. SnF 4 is used as a dopant source to improve the optoelectronic properties of Cs 2 SnI 6 films. Results indicate that good crystallinity was obtained for all films and the doped films underwent a crystalline plane meritocracy transition. The doped films had a flat, non-porous morphology with large grains. The high transmittance of the doped films in the infrared region led to the avoidance of self-generated thermal decomposition. With the help of F − , the films became more conductive and had higher carrier mobility. DFT calculations showed that doping with F reduced the surface energy of (004), resulted in a preferred orientation transition in the crystal of Cs 2 SnI 6 . Fluorine doped double layer perovskite materials would have a broader application prospect.
研究领域:
材料科学
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物理化学
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DOI
高影响因子
SOLAR ENERGY
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2020
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IF 4.608
Xiao Nairui,Tang Yehua,Qiu Yali,Liu Duoduo,Wang Ke-Fan
Inorganic perovskite semiconductor Cs 2 SnI 6 is a promising solar light absorber material to replace its unstable organic-inorganic counterpart in perovskite solar cells. However, at present its synthesis method is still complex and expensive. Here we report a simple one-step solution method to synthesize the Cs 2 SnI 6 powder, and then the effects of reactant type, reactant ratio and reaction solvent on the purity, crystallinity, optical and electrical properties, air and thermal stability of the Cs 2 SnI 6 power were studied. We find that pure and crystalline Cs 2 SnI 6 powder can be achieved in acetonitrile or anhydrous ethanol with a CsI:SnI 2 ratio of 1:1, or with a CsI:SnI 4 ratio of 3:2 (or 2:1). Cs 2 SnI 6 film with better crystallinity usually has a stronger optical absorption, a lower carrier concentration, a higher carrier mobility, and a better air and thermal stablity. Optical absorption of Cs 2 SnI 6 synthesized in anhydrous ethanol and acetonitrile keeps almost unchanged at the anneal temperature up to 150 °C.
研究领域:
材料科学
·
化学
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DOI
高影响因子
ACS Applied Materials & Interfaces
·
2023
·
IF 9.5
Dong Fang,Yanfang Tan,Yuxuan Ren,Shuchao Zheng,Fengming Xiong,Anchen Wang,Kai Chang,Baoxiu Mi,Dapeng Cao,Zhiqiang Gao
Cs2SnI6 powder is, for the first time, solution-prepared via the formula CsI + SnI2 + I2 → Cs2SnI6. The product is highly pure and air/thermal stable. It is found that N,N-dimethylformamide (DMF) and methanol induce severe Cs2SnI6 deterioration with the appearance of a CsI phase in film preparation from Cs2SnI6 powder, while solvents of γ-butyrolactone (GBL) and ethylene glycol methyl ether (EGME) (Film-EGME) give better results. Then, by introducing EGME solvent, in situ preparation of Cs2SnI6 films (Film-1 to Film-4) is realized under solution reaction, which is found to be dominated by thermal dynamic process, i.e., highly pure/oriented Film-4 is obtained under the maximum reagent-concentration. Besides, for good reaction, the solubility of solvent should be balanced among all the reagents and products. Solid-state dye sensitized solar cells (ss-DSSCs) comprising a Cs2SnI6 electrolyte are investigated. The power conversion efficiencies (PCEs) of the ss-DSSCs based on solution-casted Film-EGME and the in situ-prepared Film-4 are 1.81% and 3.30%, respectively. Particularly, with the in situ prepared Cs2SnI6 films, it is found that the open circuit voltages of the ss-DSSCs are closely related to their gap states. When additive is added in Cs2SnI6 electrolyte, a PCE of 6.14% is obtained in an ss-DSSC. Our work highlights the importance of solvent in film preparation and the role of Cs2SnI6 gap states in device performance.
研究领域:
材料科学
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能源技术
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光伏器件
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产品关联
DOI
PubMed
高影响因子
Journal of Materials Chemistry C
·
2021
·Vol. 9
·期 40
·14217-14225
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IF 7.393
Junyi Huang,Chen Dong,Yantao Mei,Xiayao Lu,Gentian Yue,Yueyue Gao,Rong Liu,Weifeng Zhang,Furui Tan
Lead-free metal halide perovskites have attracted extensive attention as promising optoelectronic semiconductors with environmental friendliness. Cs2SnI6, a double perovskite with both a good phase and composition stability, is an appealing candidate for potential application in optoelectronic devices. To date, few reports have focused on the facile fabrication of dense and uniform Cs2SnI6 films that are key components for optoelectronic devices. Herein, a simple and low-cost solution method is reported to prepare densely packed Cs2SnI6 thin films. It was found that strategic precursor-compensation treatment (PCT) of the as-prepared spin-coated Cs2SnI6 thin films compensates the evaporation loss of volatile SnI4 and thus allows for pinhole-free and pure-phase double perovskite. The modified n-type Cs2SnI6 double perovskite shows enhanced conductivity and mobility with decreased charge recombination loss. As a result, the applied photodetectors show an enhanced photocurrent gain of 151 compared to that of 88 for the control sample. The responsivity (control 0.0059 mA W−1 to target 1.07 mA W−1) and detectivity (control 2.94 × 1010 Jones to target 6.03 × 1010 Jones) of the device were significantly improved in the self-powered mode. In addition, the PCT-Cs2SnI6 photodetectors show excellent long-time stability with 98% initial detectivity retained after storing in ambient environment for 28 days. This study paves the way for the preparation of high-quality Cs2SnI6 films for application in efficient optoelectronic devices.
研究领域:
材料科学
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光电材料
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半导体物理
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产品关联
DOI
高影响因子
OPTICAL MATERIALS
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2024
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IF 3.8
Jun Xie,Mei Zhao,Youqing Dong,Chao Zou,Shuang Pan,Quanlong Xu,Yun Yang,Shun Wang,Lijie Zhang
The all-inorganic lead-free perovskite Cs 2 SnI 6 has gained considerable research attention due to its outstanding characteristics, including non-toxicity, robust stability, and superior photoelectric performance. In this research, we employed a simple yet robust chemical vapor deposition technique to successfully grow ultra-thin 2D Cs 2 SnI 6 flakes on a mica substrate, achieving a minimal thickness of just 8 nm and a significant lateral size of up to 48 μm. The obtained 2D Cs 2 SnI 6 flakes displayed an extended photoluminescent lifetime of approximately 1.44 ns and exceptional stability, maintaining their crystal structure intact over a period of 60 days. The photodetectors fabricated from Cs 2 SnI 6 flakes demonstrated a broad ultraviolet to near-infrared response range (365–1342 nm), with a responsivity of up to 6.25 × 10 5 A W −1 . They additionally displayed rapid rise and decay times of 31.32 ms and 72.42 ms, respectively, with an external quantum efficiency reaching as high as 1.92 × 10 6 %, and a detectivity achieving 1.27 × 10 11 Jones. This research serves as a critical step forward in enabling the facile yet robust synthesis of stable, all-inorganic ultra-thin lead-free perovskites, paving the way for innovation in environmentally friendly optoelectronic devices.
研究领域:
材料科学
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光电技术
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纳米科技
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产品关联
DOI
高影响因子
OPTICS EXPRESS
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2023
·Vol. 31
·期 15
·25298-25306
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IF 3.8
Haoming Wei,Haoming Wei,Tingyu Si,Fan Xu,Wuyang Fan,Tengzhou Yang,Bingqiang Cao,Fangying Juan,Jun Xu,Yangqing Wu
Double perovskites without lead element have attracted great attention in recent years. Further increasing the photoluminescence quantum yield of lead-free double perovskites is necessary for their potential applications. In this work, Na+ doped Cs2SnI6 nanocrystals were synthesized by hot injection method. It was displayed that all the NCs have uniform hexagonal shape with good crystallization. Energy dispersing spectroscopy and X-ray photoelectron spectroscopy proves the Na+ ions were doped in the lattice of perovskite structure. The photoluminescence intensity of doped NCs is increased by 2.7-fold than that of pure NCs. A maximum photoluminescence quantum yield of 72% is obtained. The luminous mechanism was investigated by femtosecond transient absorption spectrum and a self-trap emission was proved by the observation of ground state bleaching and photo-induced absorption signals.
研究领域:
材料科学
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纳米技术
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光学
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DOI
高影响因子
Journal of the American Chemical Society
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2019
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IF 14.695
Xu-Dong Wang,Yu-Hua Huang,Jin-Feng Liao,Yong Jiang,Lei Zhou,Xiao-Yan Zhang,Hong-Yan Chen,Dai-Bin Kuang
Heterojunction engineering has played an indispensable role in the exploitation of innovative artificial materials with exceptional properties and has consequently triggered a new revolution in achieving high-performance optoelectronic devices. Herein, an intriguing halide perovskite (PVK) and metal dichalcogenide (MD) heterojunction, i.e., a lead-free Cs2SnI6 perovskite nanocrystal/SnS2 nanosheet hybrid, was fabricated in situ for the first time. Comprehensive investigations with experimental characterizations and theoretical calculations demonstrate that cosharing of the Sn atom enables intimate contact in the Cs2SnI6/SnS2 hybrid together with a type II band alignment structure. Additionally, ultrafast carrier separation between SnS2 and Cs2SnI6 has been observed in the Cs2SnI6/SnS2 hybrid by transient absorption measurements, which efficiently prolongs the lifetime of the photogenerated electrons in SnS2 (from 1290 to 3080 ps). The resultant spatial charge separation in the Cs2SnI6/SnS2 hybrid evidenced by Kelvin probe force microscopy (KPFM) significantly boosts the photocatalytic activity toward CO2 reduction and the photoelectrochemical performance, with 5.4-fold and 10.6-fold enhancements compared with unadorned SnS2. This work provides a facile and effective method for the in situ preparation of PVK-MD heterojunctions, which may significantly stimulate the synthesis of various perovskite-based hybrid materials and their further optoelectronic applications.
研究领域:
材料科学
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纳米技术
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光化学
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光电学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Surfaces and Interfaces
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2024
·
IF 5.7
Wei Ding,Chen Bai,Yuxuan Ren,Dong Fang,Jing Bai,Jiali Wen,Baoxiu Mi,Dapeng Cao,Zhiqiang Gao
Here, we report the first work relating to interface-modification to solid state dye sensitized solar cells (ss-DSSCs) with Cs 2 SnI 6 electrolyte by introducing KI or guanidine thiocyanate (GuSCN). Results show that KI and GuSCN modifications endow V OC improvements of 35% and 31% respectively, leading to power conversion efficiency ( PCE ) of 5.89% and 5.64%. Although both KI and GuSCN modification can retard charge recombination, their V OC improvement mechanism is not exactly the same: KI based devices mainly enjoy up-bending of the conducting band of TiO 2 and the down shift of the gap states in Cs 2 SnI 6 , while the V OC improvement in GuSCN devices is dominated by the lowering of gap states in Cs 2 SnI 6 . Structural analysis indicates that KI/GuSCN modification causes CsSnI 3 impurity and disrupts Cs 2 SnI 6 growth at the interface, while the bulk Cs 2 SnI 6 is uninfluenced, e.g., consisting cubic Cs 2 SnI 6 particles with good crystalline. Our work provides insights for V OC improvement in ss-DSSC with interface modification in terms of electronic and material structural aspects, which enrich property-material/interface structure relationship, beneficial to both ss-DSSC architecture and material engineering.
研究领域:
材料科学
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能源科学
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界面工程
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产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2024
·Vol. 12
·期 26
·16034-16042
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IF 10.7
Saqib Nawaz Khan,Huili Liang,Yan Wang,Xiaolong Du,Zengxia Mei
With the advancement of perovskite research, there is a growing urgency to address the imperative need for practical applications while simultaneously tackling the enduring challenges of material reliability and lead (Pb) toxicity. The crystallization, morphology and optical properties of the resultant film and device performance during solution processing are heavily influenced by the solution-based intermediate, a state determined using the coordination between solute and solvent. Solvent–solute coordination is closely correlated with solvent characteristics including ionization capabilities, dielectric constant, hydrolysis, and reactivity with solutes. Deionized water (D-water) characterized by its high polarity, ionization capability, and dielectric constant, when used as a co-solvent with dimethylformamide (DMF) and dimethyl sulfoxide (DMSO), facilitates stronger coordination with CsI/SnI4 species in Cs2SnI6 precursor solution. This enhanced coordination leads to improved solvation, precursor reactivity, and solution homogeneity. Incorporating an appropriate amount of D-water as a co-solvent into Cs2SnI6 precursor solution allows for tuning solvent coordination and control over the resulting thin film crystallization and morphology. The co-solvent diluted optimized Cs2SnI6 thin film leads to the fabrication of energy-efficient broadband 4 × 3 photodetector arrays ranging from UV to NIR giving a responsivity of 5.5 A W−1 at a substantially lower bias voltage of −0.1 V with stable operation stability in ambient air. These findings underscore the potential advantages of solution-processed Cs2SnI6 perovskites in various optoelectronic applications.
研究领域:
材料科学
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光电子学
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半导体物理
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产品关联
DOI
高影响因子
Materials Today Chemistry
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2026
·
IF 7.4
Yujie Han,Jun Liu,Jinfeng Xie,Haiqiong Du,Shirui Zhang,Qi Xue,He Huang
Dual-functional organosilyl iodide additive simultaneously passivates iodine vacancies and regulates crystallization. • Lewis acid-catalyzed in situ generation of TMSAc yields uniform octahedral Cs 2 SnI 6 crystals (2–5 μm). • Optimized TMSI concentration (2 %) completely suppresses CsSnI 3 impurity phase formation. • Phase-pure Cs 2 SnI 6 crystals retain structural integrity after 4 weeks in ambient air (∼39 % RH) and up to 250 °C. • Transient TMSAc ligand permanently locks uniform morphology during nucleation despite post-synthetic removal. The development of inorganic lead-free perovskite is essential for environmentally friendly optoelectronic applications. Among them, semiconductor Cs 2 SnI 6 has emerged as a promising material due to its intrinsic oxidation resistance and outstanding photovoltaic properties. However, conventional synthesis methods often yield non-uniform crystal size distributions and excessive grain boundaries, stemming from the inherent difficulty in controlling the crystallization process, as well as CsI impurities originating from surface iodine vacancies. In this work, we developed a two-step surface ligand reaction strategy based on the dual-functional surfactant iodotrimethylsilane (TMSI) to synthesize surface-passivated Cs 2 SnI 6 crystals. Experimental and analytical results reveal the dual roles of TMSI: (1) it creates an iodine-rich environment that suppresses surface I-vacancies, thereby improving crystallinity and achieving uniform crystal morphology; (2) it acts as a Lewis acid catalyst to regulate molecular assembly and inhibit crystal aggregation, resulting in reduced crystal dimensions. The resulting main Cs 2 SnI 6 crystal phase maintains phase integrity after 4 weeks of ambient storage (∼39% relative humidity, ∼25 °C), and withstand thermal treatment up to 250 °C. This study presents a simple and effective way to improve the crystallinity and structural stability of Sn-based perovskites by introducing a dual-functional organosilyl iodide precursor solution, offering new insights into surface defect passivation.
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DOI
高影响因子
Advanced Optical Materials
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2026
·
IF 7.2
Jiaqi Qi,Xuanfeng He,Haitao Jiang,Yuhuai Fei,Yinying Cheng,Jing Song,Cong Wang,Donglai Han
Tin-based perovskites are promising lead-free candidates for nonlinear optical applications, yet their performance and stability require further improvement. This work proposes a multi-step interface engineering strategy to markedly enhance the nonlinear optical response. A stable Cs 2 SnI 6 (S-Cs 2 SnI 6 ) film was first prepared via an improved in situ growth method, exhibiting an initial nonlinear absorption coefficient ( β ) of −4.12 × 10 −7 m W −1 . By replacing the conventional liquid crystal 4-Cyano-4’-pentylbiphenyl (5CB) with the π -conjugated liquid crystal 4-[(4-Pentylphenyl)iminomethyl]benzonitrile (5CNB), an S-Cs 2 SnI 6 @5CNB composite was obtained. The optimized interfacial interaction facilitated electron transfer, resulting in a significantly enhanced β value of 2.05 × 10 −6 m W −1 . Further incorporation of plasmonic gold nanoparticles (Au NPs) yielded the Au/S-Cs 2 SnI 6 @5CNB heterostructure. Benefiting from the localized surface plasmon resonance (LSPR) of Au NPs, the local electromagnetic field was substantially intensified, boosting β value to 6.94 × 10 −6 m W −1 , a 239% increase over the composite without Au and a 434% increase over the control without the perovskite. Z-scan measurements confirmed outstanding optical limiting with a low threshold of 0.072 J cm −2 . This study successfully demonstrates a synergistic enhancement strategy, paving the way for advanced optical limiters and nonlinear photonic devices.
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DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2016
·
IF 4.732
Xiaofeng Qiu,Bingqiang Cao,Shuai Yuan,Xiangfeng Chen,Zhiwen Qiu,Yanan Jiang,Qian Ye,Hongqiang Wang,Haibo Zeng,Jian Liu,Mercouri G. Kanatzidis
All-inorganic and lead-free cesium tin halides (CsSnX 3 , X=Cl, Br, I) are highly desirable for substituting the organolead halide perovskite solar cells. However, the poor stability of CsSnX 3 perovskites has so far prevented the fabrication of devices that can withstand sustained operation under normal conditions. In this paper, a two-step sequential deposition method is developed to grow high-quality B-γ-CsSnI 3 thin films and their unique phase change in atmosphere is explored in detail. We find the spontaneous oxidative conversion from unstable B-γ-CsSnI 3 to air-stable Cs 2 SnI 6 in air. Allowing the phase conversion of the CsSnI 3 film to evolve in ambient air it gives the semiconducting perovskite Cs 2 SnI 6 with a bandgap of 1.48 eV and high absorption coefficient (over 10 5 cm −1 from 1.7 eV). More importantly, the Cs 2 SnI 6 film, for the first time, is adopted as a light absorber layer for a lead-free perovskite solar cell and a preliminary estimate of the power conversion efficiency (PCE) about 1% with open-circuit voltage of 0.51 V and short-circuit current of 5.41 mA/cm 2 is realized by optimizing the perovskite absorber thickness. According to the bandgap and the Shockley-Queisser limit, such inorganic perovskite solar cell with higher efficiency and pronounced stability can be expected by material quality improvement and device engineering.
研究领域:
材料科学
·
光伏技术
·
无机化学
·
半导体材料
·
可再生能源
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）