APPLIED OPTICS
·
2024
·Vol. 63
·期 5
·1258-1264
·
IF 1.7
Hongliang Zhao,Yating Zhang,Yating Zhang,Jianquan Yao
Lead halide perovskites (LHPs) have been extensively studied due to their remarkable optoelectronic performance. However, the toxicity of a lead ion to humans and its instability under ambient conditions render lead-based halide perovskite an unsuitable material for commercialization. Meanwhile, lead-free halide perovskite (LFHP) devices generally exhibit poor performance. Therefore, enhancing photoelectric conversion capacity is the most important issue that needs to be addressed. Here, we propose a photodetector (PD) fabricated using ${{\rm CsBi}_3}{{\rm I}_{10}}/{\rm phenyl} {\text -} {{\rm C}_{61}}$-butyric acid methyl ester (PCBM) bulk heterojunction as the active layer. The PD illuminated under 532 nm can reach a high responsivity (1.54 A/W) at ${-}{2}\;{\rm V}$ bias, while at 2 V bias, the PD reaches a higher responsivity (224.40 A/W). All of those results suggest that ${{\rm CsBi}_3}{{\rm I}_{10}}/ {\rm PCBM}$ bulk heterojunctions hold enormous potential in substituting for LHPs in optoelectronic devices.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Chuangchuang Wei,Jihui Wang,Lijin Wang,Jinxing Zhao,Zhe Yin,Aiwei Tang
Perovskites have made remarkable advancements in optoelectronics owing to their high light absorption coefficient, tunable bandgap, and long charge diffusion. Nonetheless, the practical applications of Pb-based perovskites have been hindered by the instability and toxicity of Pb, especially in flexible electronics, which require high biosecurity and low toxicity. Hence, the development of stable Pb-free perovskite materials has gained increasing attention. In this study, we synthesized stable CsBi3I10 Pb-free perovskites outside the glovebox and improved the optoelectronic and mechanical performances of the CsBi3I10-based flexible devices through polyvinylcarbazole (PVK) doping. Flexible photodetectors with the device structure of PET/ITO/PEDOT:PSS/CsBi3I10:PVK/Au was fabricated. The results indicated that the introduction of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) reduced the surface roughness of the flexible PET substrate, while PVK doping further improved the surface smoothness of CsBi3I10 thin films, thereby enhancing the interfacial charge transportation. Moreover, PEDOT:PSS and PVK acted as stepwise hole transport layers in the photodetectors. The device demonstrated a maximum responsivity of 0.3 A/W, detectivity of 2.6 × 1011 Jones, and a response time of 102 μs at 650 nm. After subjecting it to 1000 bending tests, the light current retained 80% of its initial value. This study presents a universally applicable method for controlling the surface morphology of a flexible perovskite thin film.
研究领域:
材料科学
·
光电材料
·
柔性电子
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Nano Energy
·
2023
·
IF 17.6
Zhan Wei,Ling Ding,Na Sun,Le-Yang Dang,Hao-Ran Sun,Jie-Cai Han,Jia-Qi Zhu,Gui-Gen Wang
Perovskites have become promising candidates for triboelectric nanogenerators (TENGs) because of their excellent electrical and dielectric properties . Also, and the as-fabricated triboelectric-photoelectric coupled TENG based on those semiconductor characteristics can effectively enhance the device output performance. Herein, a low-toxic lead-free bismuth halide perovskite CsBi 3 I 10 (CBI) film was proposed as triboelectric material for the first time, and a photo-enhanced TENG was designed based on CBI owing to its broad absorption properties . The CBI based TENG exhibits the highest voltage of 158 V and current density of 45.5 mA m −2 in dark condition. Furthermore, under illumination, the triboelectric output of voltage and current are increased by about 21.7% and 15.8% respectively, and the power density of the device can reach up to 4.95 W m −2 . This work not only initiates a new route for applying lead-free perovskite in TENGs but also presents a hybrid TENG for simultaneously harvesting mechanical and light energy based on the triboelectric-photoelectric coupling effect.
研究领域:
材料科学
·
能量收集
·
纳米技术
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry C
·
2018
·Vol. 7
·期 4
·863-870
·
IF 5.976
Xiao-Wei Tong,Zhi-Xiang Zhang,Di Wang,Lin-Bao Luo,Chao Xie,Yu-Cheng Wu
In this study, a sensitive near-infrared (NIR) photodetector based on a CsBi3I10 perovskite/Si heterojunction is developed by directly coating a layer of inorganic perovskite onto a planar Si substrate. The as-constructed heterojunction displays a representative current rectifying behavior in the dark and remarkable photoresponse properties upon light irradiation. The distinct photovoltaic effect enables the device to function as a self-driven photodetector working at zero bias. Furthermore, it is observed that the photodetector is sensitive in a wide spectral region with peak sensitivity at ∼820 nm. Under 808 nm illumination, the critical photoresponse parameters of responsivity, external quantum efficiency and specific detectivity reached 178.7 mA W−1, 27.2% and 4.99 × 1010 Jones at zero bias, respectively, which can be further increased to as high as 492.1 mA W−1, 75.2% and 1.38 × 1011 Jones at a working bias of −1 V. What is more, the present device also holds a large Ilight/Idark ratio of ∼1 × 104, a rapid response speed of 73/36 μs, and excellent air stability even after 3 months of storage under ambient conditions. Considering the good photoresponse performance and facile assembly approach, the CsBi3I10 perovskite/Si heterojunction possesses huge potential for future cost-effective and high-performance photodetection applications.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
Small
·
2026
·
IF 11.8
Xue-Ju Huang,Zhan Wei,Shunyu Yu,Ling Ding,Yanhong Zhou,Gui-Gen Wang
With the rapid development of distributed sensor systems, direct-current triboelectric nanogenerators (DC-TENGs) based on tribovoltaic effects have attracted wide attention. However, the development of efficient semiconductor materials for enhanced output remains challenging. Herein, air-stable Sb 3+ doped CsBi 3 I 10 films were synthesized, and DC-TENG devices based on Al/CsBi 2.7 Sb 0.3 I 10 dynamic Schottky junction were then developed for harvesting mechanical and solar energy. Among a series of Sb 3+ doping concentrations, the CsBi 2.7 Sb 0.3 I 10 film exhibits the narrowest FWHM (Full Width at Half Maximum) value and the best crystallinity. Being ascribed to more suitable energy-level alignment, reduced trap states, and especially increased dielectric constant, the optimized Al/CsBi 2.7 Sb 0.3 I 10 DC-TENG delivers a short-circuit current density of 31.4 A m −2 and an open-circuit voltage of 4.3 V under dark conditions, with respective increase of approximately 29.8% and 26.5% compared with the Al/CsBi 3 I 10 DC-TENG. Under simulated sunlight illumination, the output further increases to 44.1 A m −2 and 7.5 V, which is attributed to the contribution of photogenerated carriers during the dynamic contact process. Moreover, the device maintains stable output performance after being placed in ambient air for 49 days. This work provides a feasible strategy for developing lead-free perovskite semiconductor-based DC-TENGs with enhanced electrical output and multi-energy harvesting capability.
✓ 已验证
DOI
高影响因子
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