Porous PbBr2 films modulation by indium tribromide additive for the fabrication of SnO2-based CsPbBr3 perovskite solar cells
The achievement of complete conversion of PbBr 2 films presents a significant challenge in the development of CsPbBr 3 films with consistent growth, comprehensive coverage, and controllable components. To address this challenge, introducing a porous structure in the planar PbBr 2 film is advantageous for facilitating the immersion of CsBr precursor, thereby reducing impurity phase formation and mitigating strain caused by the film volume expansion. In order to accomplish this, indium tribromide (InBr 3 ) was employed as an additive and the InBr 3 (DMF) 3 adduct was utilized to expedite the release of organic molecules in PbBr 2 (DMF), resulting in the transformation of planar PbBr 2 film into porous structures. The growth orientation of PbBr 2 crystals was altered by this transformation, effectively suppressing the generation of metallic Pb impurities in the film. Additionally, it not only optimizes the morphology of CsPbBr 3 film but also reduces impurity phase. As a result, the InBr 3 :CsPbBr 3 perovskite solar cell achieved an efficiency of 7.28 %. The majority of In 3+ ions were concentrated near the buried interface between SnO 2 and InBr 3 :CsPbBr 3 , leading to significant improvements in both non-radiative recombination defect states within the perovskite film and electron injection and collection capabilities within the device.
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