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CsPbBr3/ZnS
ACS Applied Nano Materials · 2025 · IF 5.5

Type-II CsPbBr3/ZnS Heterostructured Nanocrystals for High-Performance Self-Powered Photodetector

Zejiang Gao,Li Chen,Shaohong Li,Xingyu Pan,Yu Liu,Ge Gao,Bingsuo Zou

Metal halide perovskites have emerged as promising functional materials for high-performance photodetectors owing to their exceptional properties, including high-absorption coefficient, low-exciton binding energy, and near-unity photoluminescence quantum yields. However, their practical applications in photodetection remain constrained by intrinsic carrier recombination losses. Herein, we report the rational design of type-II CsPbBr3/ZnS heterostructured nanocrystals (NCs) through interfacial band engineering to address this challenge. Advanced characterization combining transmission electron microscopy, ultraviolet photoelectron spectroscopy, and density functional theory calculations confirms the formation of a staggered band alignment at the heterointerface. This unique electronic structure facilitates fast charge separation and inhibits carrier recombination compared to pristine CsPbBr3 NCs. Benefiting from the advantages of CsPbBr3/ZnS heterostructured NCs, we demonstrate a self-powered photodetector with excellent detection capability under 365 nm illumination: photosensitivity of 1.38 × 104, responsivity of 37.5 mA/W, and specific detectivity of 1.21 × 1012 Jones at zero bias. The interfacial engineering strategy presented in this work establishes a universal approach for developing high-efficiency perovskite optoelectronics with tailored charge transport dynamics.

研究领域: 材料科学 · 光电材料 · 纳米技术
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Journal of Physical Chemistry C · 2024 · IF 3.3

Pressure Effect on Luminescence Characteristics and Energy Transfer in CsPbBr3/ZnS Nanocrystal Heterostructures

Zexun Cui,Pingping Zhang,Weixin Li,Pengyu Zhou,Yu Zhang,Bao Liu,Yuqiang Li

All-inorganic perovskite CsPbX3 (X = Cl, Br, or I) and related materials have shown great potential for applications in solar cells, light-emitting diodes, and photodetectors. A kind of heterostructure was proposed comprising CsPbBr3/ZnS nanocrystals in order to enhance the luminescence properties of CsPbBr3 nanocrystals. The incorporation of ZnS induces recombination at the interface, facilitating charge transfer and the formation of a type-II heterostructure. The luminescence characteristics of this heterostructure can be modulated by applying pressure. The photoluminescence intensity of the CsPbBr3/ZnS nanocrystals is significantly enhanced up to 0.29 GPa. With further pressure increase, these nanocrystals exhibit a red shift in emission wavelength, resulting in a high sensitivity (dλ/dP) of 9.59 nm GPa–1 and an absolute sensitivity (dFWHM/dP) of 6.07 nm GPa–1. Photoluminescence quenching occurs until the completely undetectable emission at a pressure of 2.38 GPa. The observed anomalous enhancement and wavelength red shift indicate that pressure can promote the transition from free excitons to self-trapping excitons, leading to energy transfer between ZnS and CsPbBr3. This study enhances the understanding effect of high pressure on luminescent materials in heterostructures.

研究领域: 材料科学 · 光学
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INORGANIC CHEMISTRY · 2024 · IF 4.3

Surface and Interface Engineering for Highly Stable CsPbBr3/ZnS Core/Shell Nanocrystals

Keqiang Chen,Dan Liu,Weiqi Lu,Kaihuai Zhuo,Guogang Li

Shelling with chalcogenides on the surface of lead halide perovskite (LHP) nanocrystals (NCs) is believed to be an effective approach to increase their stability under high-moisture/aqueous conditions, which is important for LHP NC-based optoelectronic devices. However, it is still a challenge to prepare high-quality LHP/chalcogenide core/shell NCs with moisture/aqueous stability. In this work, a surface-defect-induced strategy is carried out to facilitate the adsorption of Br– ions and subsequently Zn2+ ions to preform a bipolar surface, which reduces the energy barrier at the CsPbBr3/ZnS interface and promotes the epitaxial growth of the ZnS shell layer. The aqueous stability of the as-received NCs shows an increase of over 12 times compared to that of the original one. Likewise, Mn2+ ions are introduced to further reduce the geometric symmetry mismatch and defect density at the CsPbBr3/ZnS interface. Interestingly, aqueous stability characterizations illustrate negligible degradation even after 230 min of ultrasonication, suggesting their outstanding stability. This work proposes an effective approach to prepare high-quality LHP/chalcogenide core/shell NCs, which possess great potential in the fabrication of stable optoelectronic devices.

研究领域: 材料科学 · 纳米技术 · 光电子学 · 化学工程
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JOURNAL OF MATERIALS SCIENCE · 2020 ·Vol. 56 ·期 6 ·4161-4171 · IF 3.553

All-solution-processed, highly efficient and stable green light-emitting devices based on Zn-doped CsPbBr3/ZnS heterojunction quantum dots

Wang Pan,Wu Zhihai,Wu Manyu,Wei Jiao,Sun Yanni,Zhao Zhenfu

The low-cost, solution-processed and stable perovskite quantum dots (QDs) light-emitting diodes (QLEDs) have great potential applications for the new-generation displays technology and white-LEDs. The stability of perovskite QDs has been improved via polymers or inorganic encapsulation strategies, but at the cost of their semiconducting properties, so it is not suitable for active light-emitting devices. In this paper, the Zn-doped CsPbBr 3 /ZnS QDs heterojunction were fabricated via a simple solution-phase method, which demonstrated simultaneously enhanced the optical properties and stability of perovskite QDs films without damaging their semiconducting properties. The photoluminescence quantum yields and stability of the Zn-doped CsPbBr 3 /ZnS heterojunction QDs films have been significantly improved because of good surface passivation on the surface defects of perovskite QDs with ZnS nanoclusters and Zn 2+ doping. Finally, solution-processed n-ZnO nanoparticles (NPs) and p-NiO NPs as carrier transport layers are used to fabricate all-inorganic Zn-doped CsPbBr 3 /ZnS QLEDs. The QLEDs show high-efficiency green light emission with a maximum luminance of 8600 cd/m 2 and external quantum efficiency of 4.8%. Moreover, the researched green perovskite QLEDs also show good working stability after a long test time in the outside environment. This study may provide an effective way for the preparation high-performance perovskite QLEDs with good environmental stability, making practical applications possible.

研究领域: 材料科学 · 光电技术
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