Journal of Materials Chemistry C
·
2025
·
IF 5.1
Kunpeng Mou,Xiaoxi Feng,Fangxiong Tang,Wenzhen Wang,Xudong Tang,Yongning Liu,Benlan Zeng,Sirui Bao,Minghao Cui,Jianing Hu,Huaxing Gou,Yan Zhu,Jinkun Liu,Run Xu
It is of great importance to choose a suitable solvent for the growth of high-quality CsPbBr3 single crystals. Here, by introducing acetonitrile (ACN) to the mixture of dimethyl sulfoxide (DMSO) and dimethylformamide (DMF) solvents, the solubility curve of CsPbBr3 exhibits a monotonic decrease in the temperature range of 20–80 °C, which can reduce the growth temperature to around 45 °C. Besides, the addition of ACN significantly increased the yield of single crystals to 38.71%. The quality of CsPbBr3 single crystals grown in the DMSO/DMF/ACN precursor was improved, evidenced by a full width at half maxima (FWHM) of 0.035° in the X-Ray rocking curve of (100) and the absence of secondary phase inside the crystal from the infrared image. A μτ value of 2.57 × 10−4 cm2 V−1 from the corresponding devices can be achieved, comparable to that of crystals grown by the melt method. Our work here provides a promising solution recipe for the preparation of high-quality CsPbBr3 single crystals.
研究领域:
材料科学
·
化学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Physical Chemistry C
·
2020
·
IF 4.189
Keisei Shibata,Jiyu Yan,Yuji Hazama,Shaoqiang Chen,Hidefumi Akiyama
This is the first study of lead halide perovskites (LHPs) that compares the coupling strengths between longitudinal optical (LO) phonons and free or localized excitons. In this research, we measured the excitation density and temperature dependence of the photoluminescence (PL) spectra in the range of 4-300 K in a CsPbBr3 single crystal. The PL peak energy of the free excitons monotonically blueshifts when the temperature increases, and so does the localized excitons until the temperature reaches 80 K. Above 80 K, however, the PL peak energy of the localized excitons redshifts when the temperature increases. We analyzed this unique temperature dependence using the configuration coordinate model, focusing on the exciton - LO phonon interaction. We showed that this unique temperature dependence can be exhibited as the localized excitons couple with the LO phonons with enhanced strength and have larger relaxation energy than the free excitons.
研究领域:
材料科学
·
光学
✓ 已验证
DOI
高影响因子
CHEMISTRY OF MATERIALS
·
2022
·
IF 10.508
Fangbao Wang,Ruichen Bai,Qihao Sun,Xin Liu,Yuanbo Cheng,Shouzhi Xi,Binbin Zhang,Menghua Zhu,Shuqing Jiang,Wanqi Jie,Yadong Xu
A CsPbBr3 single crystal exhibits great potentials in X-ray/gamma-ray spectroscopy and imaging. Here, an inverse temperature crystallization (ITC) method with modified precursor composition is proposed to prepare CsPbBr3 single crystals. The introduction of adduct PbBr2·2DMSO, synthesized by the antisolvent vapor-assisted crystallization method, in the precursor solution gives rise to superior crystallization with a lower impurity concentration and higher resistivity of 6.37 × 109 Ω·cm, as well as a higher hole mobility (50.7 cm2·V–1·s–1). Furthermore, a low dark current of 2.3 nA is obtained at a bias of −100 V based on an as-grown crystal with a thickness of 1 mm, according to the asymmetric Au/CsPbBr3/Sn structure. The resulting asymmetric planar detectors achieve the high peak-to-valley ratio pulse height spectra with an energy resolution of 7.66%, illuminated by an uncollimated 241Am@5.5 MeV α particle. Simultaneously, an energy resolution of 13.5% is realized when irradiated by a 59.5 keV 241Am γ-ray source at room temperature. The thermally stimulated current (TSC) spectra indicate that the density of deep energy-level trap is significantly reduced in the CsPbBr3 crystals grown by PbBr2·2DMSO-modified precursor solution, which is consistent with the high performance in radiation detection.
研究领域:
材料科学
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物理化学
·
辐射探测技术
✓ 已验证
DOI
高影响因子
ACS Photonics
·
2025
·
IF 6.7
Yongning Liu,Minghao Cui,Xiaoxi Feng,Wenzhen Wang,Xudong Tang,Sirui Bao,Kunpeng Mou,Benlan Zeng,Fangxiong Tang,Jianing Hu,Huaxing Gou,Jinkun Liu,Yan Zhu,Run Xu
CsPbBr3 single crystals have garnered significant attention as one of the most promising candidates for room-temperature semiconductor radiation detectors. However, the current solution-based growth of CsPbBr3 single crystals suffers from issues of the formation of secondary phases (CsPb2Br5) and strain-induced cracks in crystals due to high growth temperatures above the phase transition. In this study, 4-bromobutyric acid (BBA) as an additive was introduced in the precursor, which leads to an effective suppression of secondary phase formation and simultaneously a reduction of the crystal growth temperature. The CsPbBr3 single crystals grown with BBA exhibited improved crystal quality, with a full width at half-maximum of (200) X-ray rocking curve (XRC) as low as 0.025° and a high hole mobility-lifetime product (μτh) of 0.57 × 10–4 cm2/V. Moreover, the energy resolution for 57Co γ-ray spectra was improved to around 15.2%, indicating a great improvement in transport properties for CsPbBr3 single crystals grown with BBA. This study suggests that the effective suppression of the CsPb2Br5 secondary phase is likely one of the most important issues for a spectrometer-grade CsPbBr3 detector.
研究领域:
材料科学
·
辐射探测技术
✓ 已验证
产品关联
DOI
高影响因子
Nature Communications
·
2021
·Vol. 12
·期 1
·1-10
·
IF 14.919
Peng Jiali,Xia Chelsea Q.,Xu Yalun,Li Ruiming,Cui Lihao,Clegg Jack K.,Herz Laura M.,Johnston Michael B.,Lin Qianqian
Metal halide perovskites have fascinated the research community over the past decade, and demonstrated unprecedented success in optoelectronics. In particular, perovskite single crystals have emerged as promising candidates for ionization radiation detection, due to the excellent opto-electronic properties. However, most of the reported crystals are grown in organic solvents and require high temperature. In this work, we develop a low-temperature crystallization strategy to grow CsPbBr 3 perovskite single crystals in water. Then, we carefully investigate the structure and optoelectronic properties of the crystals obtained, and compare them with CsPbBr 3 crystals grown in dimethyl sulfoxide. Interestingly, the water grown crystals exhibit a distinct crystal habit, superior charge transport properties and better stability in air. We also fabricate X-ray detectors based on the CsPbBr 3 crystals, and systematically characterize their device performance. The crystals grown in water demonstrate great potential for X-ray imaging with enhanced performance metrics.
研究领域:
材料科学
·
光学工程
·
辐射探测技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Materials Chemistry A
·
2021
·Vol. 9
·期 48
·27718-27726
·
IF 12.732
Yuanbo Cheng,Menghua Zhu,Fangbao Wang,Ruichen Bai,Jinshan Yao,Wanqi Jie,Yadong Xu
The understanding and tailoring of crystalline defects have been important factors in the technological deployment of established semiconductors. Here, we report the secondary phase (SP) defects of CsPb2Br5 in CsPbBr3 crystals grown by inverse temperature crystallization. The micron-scale SP defects are found to possess a well-defined polyhedral morphology, illustrated by the 14-hedron model. A heterogeneous nucleation mechanism of SP defects on the step-like surface of CsPbBr3 associated with the deviation of the chemical state of the precursor solution is proposed. The spatial inhomogeneity distribution of SP defects is highlighted along the CsPbBr3 crystal growth direction. The SP defects area density at the subsurface is about 6.3%, but it exponentially decreases to 0.51% after thinning for 0.2 mm. Correspondingly, the hole mobility increases from 41.79 to 74.54 cm−2 V−1 s−1. Moreover the infrared transmittance, bulk resistivity and photoresponse ON/OFF ratio are significantly elevated. We emphasize that the lattice distortion region in the near-surface induced by the high density of SP defects severely deteriorates carrier transport due to the formed trapping centers, interface transport barrier and intrinsically poor transmission along the c axis. Therefore, understanding and eliminating SP defects is a preferred alternative for achieving high-performance CsPbBr3-based optoelectronic devices.
研究领域:
材料科学
·
半导体物理
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产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2023
·
IF 9.5
Zhilong Chen,Hu Wang,Fenghua Li,Wenqing Zhang,Yuchuan Shao,Shuang Yang
Halide lead perovskites have shown great development in recent years for ionizing radiation detection. However, the bias-induced interfacial electrochemical reaction between the perovskite and electrode severely deteriorates detector performance. We report that BCP strongly interacts with Al and constructs a stable Al–BCP chelating interface, resulting in the suppression of a detrimental electrochemical reaction. The fabricated Au/Al/BCP/C60/CsPbBr3/Au detector shows a low dark current of 3 nA with a stable baseline at an extremely high bias of 100 V (∼100 V mm–1). The superior high-bias stability enables a high sensitivity of 7.3 × 104 μC Gyair–1 cm–2 at 100 V. Meanwhile, a low detection limit of 15 nGyair s–1 at 40 V is achieved due to the reduced noise. The outstanding performance of our device exceeds that of most advanced detectors based on CsPbBr3 single crystals. Besides, X-ray imaging with 1 mm spatial resolution is well demonstrated at a low dose rate of 200 nGyair s–1. The interfacial chelating strategy overcomes the technical limitation of bias-induced instability of perovskite radiation detectors and can be anticipated to operate under an extremely high electrical field.
研究领域:
材料科学
·
辐射探测技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
CRYSTAL GROWTH & DESIGN
·
2020
·
IF 4.089
Peng Zhang,Qihao Sun,Yadong Xu,Xiang Li,Lin Liu,Guodong Zhang,Xutang Tao
All-inorganic perovskite CsPbBr3 has attracted intense attentions due to its inspiring optoelectronic properties and excellent stability. Growing large-size single crystals with high quality is vital both for the intrinsic property investigation and the high-performance device fabrication. Here, large-size CsPbBr3 single crystals (ϕ 30 mm × 100 mm) were grown by the modified Bridgman method. The surface morphologies of the as-grown CsPbBr3 single-crystal wafers were characterized by SEM, and inclusions with size of 1–2 μm were observed in the first-time grown crystal (labeled as CPB-1). By adopting a slower growth rate (0.2 mm/h) and cooling rate (5 °C/h) than that of CPB-1, the inclusions were eliminated in subsequent growth (labeled as CPB-2). The hole mobility-lifetime products were measured to be 3.92 × 10–3 and 1.46 × 10–2 cm2·V–1 for CPB-1 and CPB-2, respectively. The carrier mobility of CPB-2 was enhanced 1 order of magnitude from 10.1 ± 0.3 cm2·V–1·s–1 (CPB-1) to 101.3 ± 4.2 cm2·V–1·s–1 due to the elimination of inclusions. In addition, CPB-2 exhibited excellent α particles detection ability with the optimal energy resolution of 15.1% at −60 V bias. We provide an effective way to enhance the optoelectronic properties and device performance of melt-grown CsPbBr3 single crystal by preventing the formation of the inclusions.
研究领域:
材料科学
·
光电材料
·
晶体生长技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Nano
·
2024
·
IF 15.8
Cancan Li,Xiao Li,Xiang Liu,Lindong Ma,Hui Yan,Lei Tong,Zhibo Yang,Jiaxing Liu,Deyu Bao,Jikun Yin,Xiujun Li,Peng Wang,Rong Li,Lei Huang,Miao Yu,Sitong Jia,Tie Wang
The growth of all-inorganic perovskite single-crystal microstructures on substrates is a promising approach for constructing photonic and electronic microdevices. However, current preparation methods typically involve direct control of ions or atoms, which often depends on specific lattice-matched substrates for epitaxial growth and other stringent conditions that limit the mild preparation and flexibility of device integration. Herein, we present the on-substrate fabrication of CsPbBr3 single-crystal microstructures obtained via a nanoparticle self-assembly assisted low-temperature sintering (NSALS) method. Sintering guided by self-assembled atomically oriented superlattice embryos facilitated the formation of single-crystal microstructures under mild conditions without substrate dependence. The as-prepared on-substrate microstructures exhibited a consistent out-of-plane orientation with a carrier lifetime of up to 82.7 ns. Photodetectors fabricated by using these microstructures exhibited an excellent photoresponse of 9.15 A/W, and the dynamic optical response had a relative standard deviation as low as 0.1831%. The discrete photosensor microarray chip with 174000 pixels in a 100 mm2 area showed a response difference of less than 6%. This method of nanoscale particle-controlled single crystal growth on a substrate offers a perspective for mild-condition preparation and in situ repair of crystals of various types. This advancement can propel the flexible integration and widespread application of perovskite devices.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
CRYSTENGCOMM
·
2017
·Vol. 19
·期 45
·6797-6803
·
IF 3.474
Mingzhi Zhang,Zhiping Zheng,Qiuyun Fu,Zheng Chen,Jianle He,Sen Zhang,Liang Yan,Yunxiang Hu,Wei Luo
As a typical representative of all-inorganic lead halide perovskites, cesium lead bromide (CsPbBr3) has attracted significant attention in the context of photovoltaics and other optoelectronic applications in recent years. In this paper, CsPbBr3 single crystal growth was conducted by a creative electronic dynamic gradient (EDG) method. The crystal structure was systematically investigated using scientific instruments and equipment. X-ray diffraction techniques, including X-ray diffraction (XRD), temperature-dependent X-ray powder diffraction and the X-ray rocking curve, were used to identify the phase and to investigate phase transition rules. Electron diffraction techniques, including high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED) and electron backscatter diffraction (EBSD), were used to investigate the crystal micro-structure. The final results indicated that the grown CsPbBr3 crystal was a perfect single crystal preferentially orienting in the (110) direction and met the basic demand of its applications.
研究领域:
材料科学
·
光电材料
·
晶体生长
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry C
·
2023
·Vol. 11
·期 25
·8533-8540
·
IF 6.4
Xiao Zhao,Shimao Wang,Fuwei Zhuge,Nengwei Zhu,Yanan Song,Mengyu Fu,Zanhong Deng,Xiaodong Fang,Gang Meng
All-inorganic perovskite CsPbBr3 single crystals (SCs) possessing both excellent photoelectric properties and environmental stability have become promising photoelectric materials. However, it remains challenging to prepare high-quality CsPbBr3 SCs with regular shape using a solution growth method due to the difference in growth rates along different crystal orientations and the difficulty in controlling the number of nucleation seeds. In this work, a solution refinement strategy has been introduced into the choline bromide assisted inverse temperature crystallization method for achieving high-quality cuboid-shaped CsPbBr3 SCs. The acquired CsPbBr3 SCs exhibit a relatively low trap density of 4.02 × 109 cm−3 and a relatively high carrier mobility of 89.72 cm2 V−1 s−1. Furthermore, the as-grown CsPbBr3 SC based photodetector exhibits high photodetection performance, especially ultrasensitive weak light detection performance. Under 530 nm light irradiation with a low light power density of 0.11 μW cm−2, the responsivity and external quantum efficiency of the CsPbBr3 SC based photodetector at a bias of 10 V could reach 36.4 A W−1 and 8520%, respectively, and a fast response speed with a rise time of 2.84 μs and a fall time of 6.38 μs has been achieved. It is worth noting that the photodetector exhibits an extremely low detection limit of 2.25 nW cm−2, indicating its great potential for weak light detection.
研究领域:
材料科学
·
光电子学
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）