JOURNAL OF ALLOYS AND COMPOUNDS
·
2025
·
IF 6.3
Le Xu,Hongjie Liu,Sixian Chen,Yuanzhi Tang,Haibin Sun,Xue Guo,Yurun Feng,Qiangqiang Hu,Guodong Zhang,Xutang Tao
In this study, the δ-phase CsPbBr x I 3-x single crystals (SCs) exhibiting notable environmental stability were investigated for the first time. Bulk crystals in centimeter-scale were successfully grown using the solution method, with EDS results confirming the chemical formula as CsPbBr 0.6 I 2.4 . The CsPbBr x I 3-x crystals demonstrate strong absorption at wavelengths less than 475 nm, with a calculated optical bandgap of 2.55 eV. Notably, the crystals also exhibit a broad emission band with a full width at half maximum (FWHM) of 247 nm, suggesting potential applications in optically driven white light emitting diodes (WLEDs). Additionally, the X-ray detection properties were characterized. All results indicate that CsPbBr x I 3-x crystals hold significant potential to harness their stability for practical applications, particularly in fields such as WLEDs, photovoltaics , and X-ray detectors.
研究领域:
材料科学
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半导体物理
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光电探测
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晶体生长
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光电子学
✓ 已验证
产品关联
DOI
高影响因子
ELECTROCHIMICA ACTA
·
2023
·
IF 6.6
Yabing Sun,Haoju Li,Xin Zhou,Yonggang Min,Yannan Qian
It is well known that the balanced charge injection helps prepare high-performance red light-emitting diodes (LEDs) in the electroactive material CsPbBr x I 3- x quantum dots (QDs). Employing a hydrothermal method, we synthesized MoO 2 nanocrystals and doped them into Poly(3,4-ethylenedioxythiophene) /poly(styrenesulfonate) (PEDOT:PSS). The results show that the synthesized MoO 2 nanocrystals can modulate the work function of PEDOT:PSS and enhance the conductivity of the PEDOT:PSS films, which is attributed to disrupting the hydrogen bond between PEDOT and PSS, and inducing the transition of PEDOT from benzoid to quinoid structure. In the PEDOT:PSS- x MoO 2 film, the work function increases from 4.9 eV to 5.09 eV when the content of x is 15%, which reduces the energy barrier between the PEDOT:PSS- x MoO 2 and the hole transport layer: poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-benzi (poly-TPD), thus promoting the hole transport and improving the V on of the devices. Additionally, the device's external quantum efficiency (EQE) reaches a maximum value of 7.53% at x = 15% enabling an improvement of 2.6 times over the base device (EQE=2.10%). This work proves that PEDOT:PSS- x MoO 2 as a hole transport layer is an effective material for preparing high-performance QD-LEDs.
研究领域:
材料科学
·
光电技术
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry A
·
2019
·Vol. 7
·期 10
·5409-5415
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IF 10.733
Mu-Zi Yang,Yang-Fan Xu,Jin-Feng Liao,Xu-Dong Wang,Hong-Yan Chen,Dai-Bin Kuang
The past few years have witnessed an impressive development of all-inorganic halide perovskite nanocrystals. In this report, a series of CsPbBrxI3−x nanocrystal/carbon nanotube (CsPbBrxI3−x NC/CNT, x = 3, 2, 1.5, 1) hybrid photoelectrodes have been fabricated and further employed in photoelectrochemical cells. Benefiting from the high conductivity of CNTs, the hybrid samples show accelerated charge separation and transfer actions after photoexcitation. Moreover, increasing the I/Br ratio in CsPbBrxI3−x nanocrystals accounts for a wider adsorption range but inferior phase stability, which calls for a delicate balance. As a result, the highest photocurrent density of 420 μA cm−2 is finally achieved by CsPbBr1.5I1.5 NC/CNT (200), which corresponds to a 7.7-fold improvement over the prototype CsPbBr3. This report offers an in-depth understanding of the charge transfer behavior along with photoelectrochemical performance of CsPbBrxI3−x nanocrystal/CNT, which can surely stimulate metal halide perovskite nanocrystal-based hybrid materials for promising optoelectronic, photocatalysis and photoelectrochemical applications.
研究领域:
材料科学
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纳米技术
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光电化学
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光电子学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF LUMINESCENCE
·
2022
·
IF 4.171
Yajie Zhu,Daocheng Hong,Yan Nie,Hanyu Liu,Sushu Wan,Mingcai Xie,Weiqing Yang,Zhihong Wei,Siyang Ye,Yuxi Tian
Cesium lead halide perovskite (CsPbX 3 ) nanocrystals (NCs) have exhibited promising applications in light-emitting diodes (LEDs) due to their tunable bandgap and high quantum efficiency. Backlighting LEDs based on CsPbBr 3 NCs with green emission have been widely designed to show their superiority. However, unlike CsPbBr 3 NCs, backlighting LEDs composed of mixed-halide perovskite (CsPbBr x I 3-x ) NCs have rarely been reported and should be further applied in colorful LEDs for granted, mainly because of the unexpected destructive effects from the commercial polymer matrix verified in this work. Purification of a commercial polymer matrix was promoted as an effective method to eliminate the destructive effects. Further investigation proved that the species with strong polarity and oxidability, e.g., BPO in commercial PMMA , are responsible for such destructive effects by inducing the structural transformation of CsPbBr x I 3-x NCs. We believe such results can help to gain a deeper understanding of the degradation mechanism of mixed-halide perovskite materials and indicate a promising method to develop stable colorful perovskite-based LEDs.
研究领域:
材料科学
·
光电领域
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2021
·
IF 9.229
Zehan Liu,Pengpeng Cheng,Yongfei Li,Ruyan Kang,Ziqi Zhang,Zhiyuan Zuo,Jia Zhao
The emergence of perovskite-based memristors associated with the migration of ions has attracted attention for use in overcoming the limitations of the von Neumann computing architecture and removing the bottleneck of storage density. However, systematic research on the temperature dependence of halide perovskite-based memristors is still required due to the unavoidable thermal stability limits. In this work, mixed halide CsPbBrxI3–x-based (X = 0, 1, 2) memristors with unique electrical and optical resistive switching properties in an ambient atmosphere from room temperature to a 240 °C maximum have been successfully achieved. At room temperature, the CsPbBrxI3–x-based memristors exhibit outstanding resistive switching behaviors such as ultralow operating voltage (∼0.81, ∼0.64, and ∼0.54 V for different devices, respectively), moderate ON/OFF ratio (∼102), stable endurance (103 cycles), and long retention time (104 s). The CsPbBrxI3–x-based memristors maintain excellent repeatability and stability at high temperature. Endurance failures of CsPbI3, CsPbBrI2, and CsPbBr2I memristors occur at 90, 150, and 270 °C, respectively. Finally, nonvolatile imaging employing CsPbBr2I-based memristor arrays based on the electrical-write and optical-erase operation at 100 °C has been demonstrated. This study provides utilization potentiality in the high temperature scenarios for perovskite wearable and large-scale information devices.
研究领域:
材料科学
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电子工程
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物理化学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Advanced Optical Materials
·
2021
·Vol. 10
·期 2
·2101517
·
IF 9.926
Xin Zhou,Jibin Zhang,Xuan Tong,Yabing Sun,Haiyan Zhang,Yonggang Min,Yannan Qian
Although all-inorganic CsPbBr x I 3− x perovskite quantum dots (PeQDs) are increasingly being used as a competitive material for pure red perovskite light-emitting diodes (PeLEDs), they suffer from low luminescent ability and poor stability. In this study, an In 3+ -doped CsPbBr x I 3− x PeQD solution exhibits a near-unity photoluminescence quantum yield (PLQY) of ≈99.8% and superior stability for more than half a year in atmosphere. As far as known, this is the highest PLQY and stability achieved for mixed halide PeQDs. In 3+ ion doping not only reduces the surface vacancy defects because of the partial substitution of Pb 2+ by the smaller radii of In 3+ ions, but also enhances the formation energy of CsPbBr x I 3− x PeQDs based on first-principles calculations. Compared with pristine LEDs based on CsPbBr x I 3− x , the pure red PeLEDs based on In 3+ -doped CsPbBr x I 3− x display a higher luminance of 423 cd m -2 , fivefold external quantum efficiency improvement up to 11.2%, and increased stability, providing a feasible and promising perspective for developing In 3+ -doped CsPbBr x I 3− x PeQDs applied efficiently in advanced light emitters for solid-state lighting and displays.
研究领域:
材料科学
·
光电技术
✓ 已验证
DOI
高影响因子
ADVANCED MATERIALS
·
2017
·Vol. 29
·期 39
·1701221
·
IF 19.791
Bo Li,Yanan Zhang,Luyuan Zhang,Longwei Yin
Despite great progress in the photovoltaic conversion efficiency (PCE) of inorganic–organic hybrid perovskite solar cells (PSCs), the large-scale application of PSCs still faces serious challenges due to the poor-stability and high-cost of the spiro-OMeTAD hole transport layer (HTL). It is of great fundamental importance to rationally address the issues of hole extraction and transfer arising from HTL-free PSCs. Herein, a brand-new PSC architecture is designed by introducing multigraded-heterojunction (GHJ) inorganic perovskite CsPbBr x I 3− x layers as an efficient HTL. The grade adjustment can be achieved by precisely tuning the halide proportion and distribution in the CsPbBr x I 3− x film to reach an optimal energy alignment of the valance and conduction band between MAPbI 3 and CsPbBr x I 3− x . The CsPbBr x I 3− x GHJ as an efficient HTL can induce an electric field where a valance/conduction band edge is leveraged to bend at the heterojunction interface, boosting the interfacial electron–hole splitting and photoelectron extraction. The GHJ architecture enhances the hole extraction and conduction efficiency from the MAPbI 3 to the counter electrode, decreases the recombination loss during the hole transfer, and benefits in increasing the open-circuit voltage. The optimized HTL-free PCS based on the GHJ architecture demonstrates an outstanding thermal stability and a significantly improved PCE of 11.33%, nearly 40% increase compared with 8.16% for pure HTL-free devices.
研究领域:
光伏学
·
材料科学
·
半导体物理
·
可再生能源
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）