Journal of the American Chemical Society
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2022
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IF 16.383
Qian Zhang,Yong-Hui Song,Jing-Ming Hao,Yi-Feng Lan,Li-Zhe Feng,Xue-Chen Ru,Jing-Jing Wang,Kuang-Hui Song,Jun-Nan Yang,Tian Chen,Hong-Bin Yao
All-inorganic CsPbI3 perovskite is attractive for deep-red light-emitting diodes (LEDs) because of its excellent carrier mobility, high color purity, and solution processability. However, the high phase transition energy barrier of optically active CsPbI3 black phase hinders the fabrication of efficient and bright LEDs. Here, we report a novel α-BaF2 nanoparticle substrate-promoted solution-processable heteroepitaxial growth to overcome this hindrance and obtain high-quality optically active γ-CsPbI3 thin films, achieving efficient and bright deep-red LEDs. We unravel that the highly exposed planes on the α-BaF2 nanoparticle-based heteroepitaxial growth substrate have a 99.5% lattice matching degree with the (110) planes of γ-CsPbI3. This ultrahigh lattice matching degree initiates solution-processed interfacial strain-free epitaxial growth of low-defect and highly oriented γ-CsPbI3 thin films on the substrate. The obtained γ-CsPbI3 thin films are uniform, smooth, and highly luminescent, based on which we fabricate efficient and bright deep-red LEDs with a high peak external quantum efficiency of 14.1% and a record luminance of 1325 cd m–2.
研究领域:
材料科学
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光电技术
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产品关联
DOI
PubMed
高影响因子
Science Bulletin
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2024
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IF 18.8
Hailiang Wang,Qixian Zhang,Zedong Lin,Huicong Liu,Xiaozhen Wei,Yongfa Song,Chunyu Lv,Weiping Li,Liqun Zhu,Kexiang Wang,Zhenhua Cui,Lan Wang,Changqing Lin,Penggang Yin,Tinglu Song,Yang Bai,Qi Chen,Shihe Yang,Haining Chen
Defects formed at the surface, buried interface and grain boundaries (GB) of CsPbI 3 perovskite films considerably limit photovoltaic performance. Such defects could be passivated effectively by the most prevalent post modification strategy without compromising the photoelectric properties of perovskite films, but it is still a great challenge to make this strategy comprehensive to different defects spatially distributed throughout the films. Herein, a spatially selective defect management (SSDM) strategy is developed to roundly passivate various defects at different locations within the perovskite film by a facile one-step treatment procedure using a piperazine-1,4-diium tetrafluoroborate (PZD(BF 4 ) 2 ) solution. The small-size PZD 2+ cations could penetrate into the film interior and even make it all the way to the buried interface of CsPbI 3 perovskite films, while the BF 4 − anions, with largely different properties from I − anions, mainly anchor on the film surface. Consequently, virtually all the defects at the surface, buried interface and grain boundaries of CsPbI 3 perovskite films are effectively healed, leading to significantly improved film quality, enhanced phase stability, optimized energy level alignment and promoted carrier transport. With these films, the fabricated CsPbI 3 PSCs based on carbon electrode (C-PSCs) achieve an efficiency of 18.27%, which is among the highest-reported values for inorganic C-PSCs, and stability of 500 h at 85 °C with 65% efficiency maintenance.
研究领域:
材料科学
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能源技术
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光伏器件
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DOI
PubMed
高影响因子
LANGMUIR
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2025
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IF 3.9
Xihong Ding,Demeng Qian,Hui Wang,Qian Hu,Lin Zhu,Hui Chen,Tengda Xu,Aohan Li,Wei Hong
This study investigates the role of 2-aminoethanethiol hydroiodate (2-AET·HI) additives in enhancing the phase stability and photovoltaic performance of CsPbI3 films for inorganic perovskite solar cells. The incorporation of 2-AET·HI into the precursor solution results in a more uniform and compact film morphology. X-ray diffraction (XRD) analysis reveals that the 2-AET·HI-treated CsPbI3 films retain their black α-phase, even after 300 h at 25% RH and ∼25 °C, whereas the control samples show a rapid transition to the nonphotoactive δ-phase. This improvement in phase stability is reflected in the enhanced photovoltaic performance, with the 2-AET·HI-modified devices exhibiting a power conversion efficiency (PCE) of 16.7%, compared to 15.4% for the control devices. Furthermore, the 2-AET·HI-modified devices display superior long-term stability, retaining 83% of their initial PCE after 192 h in ambient conditions, in stark contrast to the unmodified devices, which degrade rapidly.
研究领域:
材料科学
·
能源技术
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光伏研究
✓ 已验证
产品关联
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）