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CsPbI3量子点
Advanced Optical Materials · 2023 ·Vol. 11 ·期 6 ·2202561 · IF 9

Revealing Atomic-Level Surface Passivation of PbI2-Reconditioned Red Perovskite Quantum Dots

Liuli Yang,Jianhua Huang,Zheyuan Xu,Yang Li,Shijin Hou,Yike Tan,Juan Du,Xiao Wang,Ziwei Li,Anlian Pan

CsPbI 3 perovskite quantum dots (QDs) are promising materials for high-efficiency and low-cost red fluorophores in advanced display and light-sensing applications. However, structural and spectral stabilities of CsPbI 3 QDs by traditional preparation are seriously broken in water or light environment. Here, a compositional engineering strategy with an additional PbI 2 -recondition process to synthesize highly-stable CsPbBr 1.2 I 1.8 @ SiO 2 QDs is demonstrated. Time- and temperature-dependent photoluminescence and Raman measurements prove that spectral stability and exciton binding energy of QDs are greatly improved within this strategy. Notably, high-resolution structure characterizations, point-to-point diffraction patterns and line-scanning of element distributions provide strong and direct evidence at atomic-level to reveal that PbI 2 -recondition can repair defects well, which helps to construct perfect lattices and homogeneous SiO 2 passivation layers to prevent the surface bonding of molecules. Moreover, our red perovskite QDs are further designed to prepare various anti-counterfeiting labels as multi-scale complex patterns to store and protect information. The proposed recondition strategy explores a new avenue to prepare stable and high-quality red perovskite QDs for new-generation lighting and light-sensing devices.

研究领域: 材料科学 · 光学工程 · 纳米技术
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NPG Asia Materials · 2018 ·Vol. 10 ·期 6 ·552-561 · IF 7.208

Efficiency and stability enhancement of perovskite solar cells by introducing CsPbI3 quantum dots as an interface engineering layer

Liu Chang,Hu Manman,Zhou Xianyong,Wu Jianchang,Zhang Luozheng,Kong Weiguang,Li Xiangnan,Zhao Xingzhong,Dai Songyuan,Xu Baomin,Cheng Chun

Although great efforts have been devoted to enhancing the efficiency and stability of perovskite solar cells (PSCs), the performance of PSCs has been far lower than anticipated. Interface engineering is helpful for obtaining high efficiency and stability through control of the interfacial charge transfer in PSCs. This paper demonstrates that the efficiency and stability of PSCs can be enhanced by introducing stable α-CsPbI 3 quantum dots (QDs) as an interface layer between the perovskite film and the hole transport material (HTM) layer. By synergistically controlling the valence band position (VBP) of the perovskite and the interface layer, an interface engineering strategy was successfully used to increase the efficiency of hole transfer from the perovskite to the HTM layer, resulting in the power conversion efficiency increasing from 15.17 to 18.56%. In addition, the enhancement of the stability of PSCs can be attributed to coating inorganic CsPbI 3 QDs onto the perovskite layer, which have a high moisture stability and result in long-term stability of the PSCs in ambient air.

CAS / MDL: 534-17-8
研究领域: 材料科学 · 能源技术
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CERAMICS INTERNATIONAL · 2022 · IF 5.532

Achieve high-efficiency long afterglow luminescence control using CsPbI3 quantum dots

Ou Hai,Jian Li,Mengkang Pei,Qiang Ren,Xiulan Wu

The construction of visible full-spectrum tunable afterglow luminescence is of great significance for long afterglow materials. Here we developed a new composite material whose afterglow were continuously tunable from blue to red light, we prepared CsPbI 3 quantum dots (QDs) by thermal injection method and added passivators to obtain relatively more stable QDs materials, the SDS-CsPbI 3 QDs after passivation treatment was more than twice the photoluminescent (PL) intensity of the original QDs after 10 days, which has a positive effect on the large-scale production and application of all-inorganic perovskite QDs. By uniformly distributing CsPbI 3 QDs on the surface of Sr 2 MgSi 2 O 7 :Eu 2+ ,Dy 3+ (SMS) by Stöber method, a color-tunable long-persistence luminescent material CsPbI 3 /SMS@SiO 2 was prepared, and the tunable afterglow glows from 465 nm to 700 nm was realized by optical conversion. In addition, the PL intensity of the composite material under ultraviolet light is increased by more than 50%, and it can remain stable for a long time; its high temperature resistance is also improved to 140 °C; and the luminous intensity after 10 days remains at a high level. This research also provides new ideas and methods for the development of multicolor long afterglow materials.

研究领域: 材料科学 · 光电子学
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JOURNAL OF ALLOYS AND COMPOUNDS · 2021 · IF 5.316

Improved open-circuit voltage of CsPbI3 quantum dot solar cells by PMMA interlayer

Wei Wei,Wen Chen,Xizhu Zhao,Zifan Yang,Yueli Liu

All-inorganic CsPbI 3 quantum dots perovskite solar cells (QDPSCs) have wide potential application due to their excellent photoelectric properties with high environmental stability. However, the poor interface contact between the light absorption layer and hole transport layer (HTL) results in the serious carrier recombination and the large open-circuit voltage ( V OC ) loss. Herein, we introduce the insulating PMMA (poly(methyl methacrylate)) buffer layer into CsPbI 3 quantum dots (QDs)/Cu 12 Sb 4 S 13 QDs HTL interface in all-inorganic QDPSCs with the structure of FTO/c-TiO 2 /m-TiO 2 /CsPbI 3 QDs/Cu 12 Sb 4 S 13 QDs/Au. The interface carrier recombination is obviously suppressed and the significant V OC improvement from 1.04 V to 1.14 V is obtained with the incorporated PMMA buffer layer. The devices with PMMA buffer layer show the enhanced power conversion efficiency (PCE) of 10.99%, and the improvement of 9.71% is achieved compared to that of the control devices (10.02%). The stability is significantly enhanced due to the intrinsic hydrophobic characteristic of PMMA, and the devices retain 62.69% of their initial PCE after stored in air condition for 15 days, which is greatly improved compared with the control device without PMMA.

研究领域: 材料科学 · 能源科学
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ACS Applied Materials & Interfaces · 2024 · IF 8.3

Ultrafast Rejuvenation of Aged CsPbI3 Quantum Dots and Efficiency Improvement by Sequential 1-Dodecanethiol Post-Treatment Strategy

Xin Li,Longxun Teng,Yening Ren,Rui Liu,Xiaoyuan Zhan,Haiqing Sun,Weiwei Zhang,Jianxu Ding,Huiling Zhu

Metal halide perovskite CsPbI3 quantum dots (QDs) have sparked widespread research due to their intriguing optoelectronic. However, the CsPbI3 QDs undergo inevitable aging and luminescence quenching caused by the weak binding ability of oleate (OA–)/oleylammonium (OAm+), hindering further practical application. Herein, we have realized ultrafast rejuvenation of the aged CsPbI3 QDs that have lost their photoluminescence performance based on a 1-dodecanethiol (DDT) surface ligand to restore the outstanding red light emission with a high photoluminescence quantum yield (PLQY) from 25 to 90%. Furthermore, CsPbI3 QDs with DDT surface treatment maintain a cubic phase and high PLQY value even after 35 days. The DDT ligands can form a strong bond with Pb2+ and passivate I– ion vacancies, enhancing radiative recombination efficiency and thereby improving the PLQY of the QDs. The stable yet easily accessible surface of the DDT-capped CsPbI3 QDs was successfully employed as white LEDs and exhibited considerable enhanced luminous performance, suggesting promising application in solid-state lighting fields.

研究领域: 材料科学 · 光电技术 · 纳米技术
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Materials Chemistry Frontiers · 2020 ·Vol. 4 ·期 5 ·1444-1453 · IF 6.788

A zinc non-halide dopant strategy enables efficient perovskite CsPbI3 quantum dot-based light-emitting diodes

Jinhang Li,Jiawei Chen,Leimeng Xu,Sinan Liu,Si Lan,Xiansheng Li,Jizhong Song

Metal ion doping has been considered as one of the most effective methods to achieve highly efficient perovskite light-emitting diodes (LEDs), which is significant for future high-definition displays and high-quality lighting. However, its exact function is still uncertain because the doping of metal ions is also accompanied by the introduction of halide ions and halide-rich circumstances, which can enhance the optoelectronic properties as well. In this work, a zinc non-halide dopant strategy was employed to specifically study the effect of Zn2+ on CsPbI3 quantum dots (QDs). We confirmed that Zn2+ was doped into the perovskites interstitially via X-ray diffraction (XRD) and pair distribution function (PDF) analysis. Zn2+-doped CsPbI3 QDs exhibited higher emission properties with 120% enhancement in the photoluminescence quantum yield (PLQY) compared with pristine CsPbI3 QDs. The Zn2+-doped CsPbI3 QD-based LEDs (QLEDs) showed nearly two-fold increase in the external quantum efficiency (EQE) versus the control device, and it improved from 7.5% to 14.6%. Besides, a maximum current efficiency of 0.83 cd A−1 and the highest luminance of 378 cd m−2 were achieved. These results certify that Zn2+ doping enables high-performance QLEDs without the introduction of halide ions, which is beneficial for the further research on doped perovskite fields and lays the foundation for the future practical applications of QLEDs.

研究领域: 材料科学 · 光电技术 · 纳米技术
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ACS Applied Energy Materials · 2025 · IF 5.5

A Quaternary Ammonium Salt with Strong Electron-Withdrawing Groups for Improving the Performance of CsPbI3 Quantum Dot Solar Cells

Zhibo Zhu,Chengyang Wang,Jiawen Li,Jie He,Mei Lyu,Jun Zhu

CsPbI3 quantum dots have been employed in solar cells, owing to their exceptional photovoltaic properties. However, the ligand exchange process occurring on the surface of these quantum dots is susceptible to environmental water and oxygen, resulting in phase transitions or even aggregation, ultimately degrading the solar cell performance. The application of a quaternary ammonium salt, specifically phenyltrimethylammonium iodide, possessing strong electron-withdrawing groups for the post-treatment of quantum dot films serves dual purposes: it not only occupies the A and X-site vacancies on the quantum dot surface generated by the desorption of oleic acid and oleylamine during the ligand exchange process but also forms a protective capping layer on the surface. This capping layer isolates the quantum dots from water and oxygen, thereby enhancing the film quality. Consequently, the power conversion efficiency of the control device, 9.29%, increases to 11.59% for the target solar cell with phenyltrimethylammonium iodide treatment. Moreover, the target solar cell remains above 93% of its initial efficiency value after a storage at 25–35% relative humidity and 35–40 °C in air for 14 days.

CAS / MDL: 4233-33-4
研究领域: 光伏技术 · 纳米技术 · 材料科学 · 化学合成
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