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CsSnI3
InfoMat · 2020 ·Vol. 2 ·期 3 ·577-584 · IF 0

Stability enhancement of lead-free CsSnI3 perovskite photodetector with reductive ascorbic acid additive

Fengren Cao,Wei Tian,Meng Wang,Min Wang,Liang Li

Lead-free tin-based perovskites have attracted widespread research interest due to their nontoxicity and potential commercialization. However, their practical application is limited by high density of intrinsic defects and easy oxidation of Sn 2+ in ambient environment. To address these issues, we demonstrate an environment-friendly stable broadband photodetector based on CsSnI 3 perovskite with conventional SnF 2 and reducing agent ascorbic acid additive. Through optimizing the concentration of ascorbic acid, the optimal device reveals high responsivity (0.257 A W −1 ), fast response speed (0.35/1.6 ms), and excellent stability. The properties are comparable to most previously reported lead-free perovskite photodetectors. The enhanced performance is mainly due to the fact that ascorbic acid promotes the crystal growth, suppresses the formation of Sn 4+ , and makes it have good semiconductivity rather than metallicity.

研究领域: 材料科学 · 光电技术
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ADVANCED MATERIALS · 2023 ·Vol. 35 ·期 26 ·2300503 · IF 29.4

A Bifunctional Carbazide Additive For Durable CsSnI3 Perovskite Solar Cells

Chenghao Duan,Feilin Zou,Qiaoyun Wen,Minchao Qin,Jiong Li,Chang Chen,Xinhui Lu,Liming Ding,Keyou Yan

Inorganic CsSnI 3 with low toxicity and a narrow bandgap is a promising photovoltaic material. However, the performance of CsSnI 3 perovskite solar cells (PSCs) is much lower than that of Pb-based and hybrid Sn-based (e.g., CsPbX 3 and CH(NH 2 ) 2 SnX 3 ) PSCs, which may be attributed to its poor film-forming property and the deep traps induced by Sn 4+ . Here, a bifunctional additive carbazide (CBZ) is adapted to deposit a pinhole-free film and remove the deep traps via two-step annealing. The lone electrons of the  NH 2 and  CO units in CBZ can coordinate with Sn 2+ to form a dense film with large grains during the phase transition at 80 °C. The decomposition of CBZ can reduce Sn 4+ to Sn 2+ during annealing at 150 °C to remove the deep traps. Compared with the control device (4.12%), the maximum efficiency of the CsSnI 3 :CBZ PSC reaches 11.21%, which is the highest efficiency of CsSnI 3 PSC reported to date. A certified efficiency of 10.90% is obtained by an independent photovoltaic testing laboratory. In addition, the unsealed CsSnI 3 :CBZ devices maintain initial efficiencies of ≈100%, 90%, and 80% under an inert atmosphere (60 days), standard maximum power point tracking (650 h at 65 °C), and ambient air (100 h), respectively.

CAS / MDL: 501-53-1
研究领域: 材料科学 · 能源研究 · 光伏技术
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Journal of Energy Chemistry · 2024 · IF 14

Deep level defect passivation for printable mesoporous CsSnI3 perovskite solar cells with efficiency above 10%

Haixuan Yu,Zhiguo Zhang,Huaxia Ban,Xiongjie Li,Zhirong Liu,Junyi Huang,Wanpeng Yang,Yan Shen,Mingkui Wang

The lead-free inorganic perovskite CsSnI 3 is considered as one of the best candidates for emerging photovoltaics. Nevertheless, CsSnI 3 -based perovskite solar cells experience a significant drop in performance due to the nonradiative recombination facilitated by trapping. Here, we show an electron donor passivation method to regulate deep-level defects for CsSnI 3 perovskite with electron donor pyrrole. Experimental observations combined with theoretical simulations verify that the saturation of Tin dangling bonds with pyrrole on the CsSnI 3 surface via a Lewis acid-base addition reaction can significantly reduce the density of deep-level defects. Consequently, the printable mesoporous perovskite solar cells with an FTO/compact-TiO 2 /mesoporous-TiO 2 /Al 2 O 3 /NiO/carbon framework device structure penetrated with CsSnI 3 achieve a power conversion efficiency of up to 10.11%. To our knowledge, this represents the highest efficiency reported to date for lead-free perovskite-based printable mesoporous solar cells. Furthermore, the unencapsulated devices demonstrated remarkable long-term stability, retaining 92% of their initial efficiency even after 2400 h of aging in a nitrogen atmosphere.

研究领域: 材料科学 · 太阳能电池技术
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Surfaces and Interfaces · 2026 · IF 6

CsSnI3 optoelectronic synaptic device for biomimetic visual nociception and sound perception

Rui Li,Yuanlong Zhu,Zhijia Huang,Changsheng Zhou,Zefeng Shi,Hui Liu,Ziyu Wang,Jinxia Duan,Hao Wang

PEACl and SnF 2 additive engineering effectively regulated the crystallization behavior and defect states of CsSnI 3 films. • Biomimetic nociceptive features including threshold, sensitization, desensitization, and non-adaptation were successfully emulated. • Multimodal neuromorphic functionalities including image mapping and sound perception were successfully demonstrated. With the accelerated improvement of neuromorphic computing and artificial intelligence, optoelectronic synapses have received extensive attention for applications in artificial vision and brain-inspired perceptual systems. However, integrating high photosensitivity, stable synaptic plasticity, and advanced visual perception into a single platform remains challenging. Herein, CsSnI₃ perovskite films with high crystallinity were successfully fabricated through a low-temperature solution process assisted by PEACl and SnF₂ additives. Subsequently, an ITO/CsSnI₃/Ag optoelectronic synaptic device was constructed. Under optical stimulation, reliable photo-induced synaptic behaviors were achieved, including excitatory postsynaptic current, paired-pulse facilitation, and multilevel conductance modulation. Owing to its stable optoelectronic synaptic behavior, the device successfully replicated visual nociceptive responses, such as threshold activation, sensitization, desensitization, and non-adaptive behavior. Moreover, sound recognition was achieved through the combined modulation of frequency, voltage and illumination intensity, and a quantitative correlation between the recognition factor and the postsynaptic current was also developed. This work provides a feasible strategy for constructing lead-free perovskite optoelectronic synapses toward artificial vision and neuromorphic perception applications. Download: Download high-res image (315KB) Download: Download full-size image

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CHEMICAL ENGINEERING JOURNAL · 2024 · IF 13.3

Heterojunction photocatalyst MnO2-CsSnI3 for highly efficient formaldehyde oxidation at room temperature

Zihan Bao,Yueshuai Wang,Jingcong Hu,Jiguo Geng,Sai Ma,Hehe Liang,Guoyu Huang,Bohai Tian,Jianrui Feng,Yue Lu,Manling Sui

The effective removal of the low-concentration formaldehyde (HCHO) in the indoor environment is a critical issue affecting the quality of people’s daily lives. In this study, heterojunction catalysts composed of manganese dioxide (MnO 2 ) and cesium tin iodine (CsSnI 3 ) nanocrystals were first synthesized and successfully used for photocatalytic HCHO degradation. After the full band light irradiation (150 mW/cm 2 ) for 3 h, the concentration of HCHO decreased from 7 ppm to a minimum of 0.03 ppm at room temperature (25 °C, 25 % RH, degradation efficiency reaches up to 99.6 %). Subsequent analysis using electron paramagnetic resonance (EPR) and transmission electron microscopy (TEM) revealed that the MnO 2 -CsSnI 3 heterojunction photocatalyst not only offers a Z-scheme charge-transfer pathway but also promotes the generation of a large number of •O 2 − and •OH. Compared to the single-phase material, the concentration of •O 2 − and •OH has increased by 1.5 times. This MnO 2 -based Z-scheme heterojunction photocatalyst provides a novel strategy for the degradation of low-concentration HCHO in practical indoor environments.

CAS / MDL: 112-90-3 112-80-1
研究领域: 环境科学 · 材料科学
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Journal of Materials Chemistry C · 2018 ·Vol. 6 ·期 20 ·5506-5513 · IF 5.976

An anion-driven Sn2+ exchange reaction in CsPbBr3 nanocrystals towards tunable and high photoluminescence

Meng Li,Xiao Zhang,Katarzyna Matras-Postolek,Hsueh-Shih Chen,Ping Yang

Fast and efficient ion-exchange reactions endow CsPbX3 nanocrystals (NCs) with superior photoluminescence (PL) properties. In this study, SnX2 (X = I, Cl) was used as a Sn precursor to conduct the cation exchange reaction, which was promoted by anion exchange between the parent CsPbBr3 NCs and the guest X in SnX2. The anion-driven cation exchange reaction occurred efficiently (10 min). CsSnI3 NCs were created by ion-exchange reactions between CsPbBr3 NCs and the SnI2 precursor. The CsSnI3 NCs retained the initial morphology of CsPbBr3 NCs and revealed a high PL efficiency (59%) and prolonged PL lifetime. In contrast, the exchange reaction of Sn2+ ions in CsPbBr3 NCs did not occur in a short time using SnBr2 as a precursor. After the cation exchange reaction, the 4f peaks of Pb ions in X-ray photoelectron spectroscopy spectra shifted to low binding energies as compared to those of the parent CsPbX3 NCs. This is ascribed to the increase in the number of Pb–oleate (Pb–OA) species. Contrary to the hot-injection method used to synthesize CsSnI3 NCs, the kinetically controlled ion exchange reactions lead to the synthesis of CsSnI3 NCs with a high structural stability. Thus, an anion-exchange-promoted cation exchange reaction is a particularly efficient versatile tool to dope Sn2+ into CsPbX3 NCs.

研究领域: 材料科学 · 光学
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NANO LETTERS · 2025 · IF 9.1

Simultaneous Regulation of Crystallization and Suppression of Oxidation in CsSnI3 Perovskite Enables Efficient and Stable Near-Infrared Light-Emitting Diodes

Zirui Liu,Guanglong Wang,Lingmei Kong,Jihao Wang,Yuanzhi Wang,Pu Du,Lin Wang,Sheng Wang,Andrey L. Rogach,Xuyong Yang

Tin-based halide perovskite light-emitting diodes (PeLEDs) emitting in the near-infrared region beyond 900 nm hold tremendous potential for applications in night vision, biomedicine, and communications. However, rapid crystallization and oxidation of Sn2+ in tin-based perovskites pose significant challenges for achieving stable PeLEDs with high performance. Here, we report an efficient all-inorganic CsSnI3-based PeLED by employing a multifunctional hesperetin additive to modulate the crystallization kinetics and inhibit the oxidation process of the perovskite films. Hesperetin possesses hydroxyl groups alongside oxygen atoms offering lone electron pairs, which form hydrogen bonds with I– and strongly coordinate with Sn2+, respectively, slowing down crystallization of CsSnI3 and resulting in high coverage density films. Importantly, the coordination of hesperetin with Sn2+ protects the perovskite films from Sn2+-to-Sn4+ oxidation. Finally, we demonstrate efficient and stable PeLEDs with a peak at 948 nm, an external quantum efficiency of 4.7%, and a half-lifetime of over 11 h.

研究领域: 材料科学 · 光电技术
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ADVANCED MATERIALS · 2025 · IF 26.8

High-Performance NIR-II Sn-Based Perovskite LEDs Enabled by the Functionalization of Sulfaguanidine

Xiuling Li,Yuechuan Bi,Xiang Guan,Jiaqi Wang,Jinli Liu,Yingjie Zhao,Chunli Zhao,Zhuojian Li,Shurui Chi,Junnan Wang,Renjing Chen,Zixun Zhao,Zemin Wang,Xin Tong,Ninggui Ma,Han Liu,Zhiming Wang,Zongwen Liu,Yang Ren,Zhanhua Wei,Kebin Lin

Eco-friendly CsSnI 3 -based perovskite light-emitting diodes (PeLEDs) with the emission peak extending to the near-infrared-II (NIR-II) region hold tremendous potential for applications in biological monitoring, night vision, and optical communications. However, the various defects caused by the instability of Sn 2+ within the CsSnI 3 film, and the non-equilibrium carrier injection rate in the devices are the two major factors that limit the device performance. Here, we report high-performance NIR-II CsSnI 3 -based PeLEDs achieved by employing functional sulfaguanidine (SG) molecules. Due to the strong S═O─Sn coordination bonds, NH 2 ···I − hydrogen bonds could be formed between CsSnI 3 and SG, which effectively eliminated various Sn(II)-related defects in the CsSnI 3 film. Moreover, the SG molecules significantly improved the morphological uniformity and regulated the carrier injection balance, resulting in more balanced carrier injection that enhanced the effective radiation recombination rate. Consequently, the optimized CsSnI 3 -SG PeLEDs achieved a breakthrough external quantum efficiency (EQE) of 8.1%, which is the highest efficiency reported for CsSnI 3 -based PeLEDs to date.

CAS / MDL: 57-67-0
研究领域: 光电子学 · 材料科学 · 钙钛矿发光二极管 · 近红外光子学
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SOLAR ENERGY MATERIALS AND SOLAR CELLS · 2016 · IF 4.732

From unstable CsSnI3 to air-stable Cs2SnI6: A lead-free perovskite solar cell light absorber with bandgap of 1.48 eV and high absorption coefficient

Xiaofeng Qiu,Bingqiang Cao,Shuai Yuan,Xiangfeng Chen,Zhiwen Qiu,Yanan Jiang,Qian Ye,Hongqiang Wang,Haibo Zeng,Jian Liu,Mercouri G. Kanatzidis

All-inorganic and lead-free cesium tin halides (CsSnX 3 , X=Cl, Br, I) are highly desirable for substituting the organolead halide perovskite solar cells. However, the poor stability of CsSnX 3 perovskites has so far prevented the fabrication of devices that can withstand sustained operation under normal conditions. In this paper, a two-step sequential deposition method is developed to grow high-quality B-γ-CsSnI 3 thin films and their unique phase change in atmosphere is explored in detail. We find the spontaneous oxidative conversion from unstable B-γ-CsSnI 3 to air-stable Cs 2 SnI 6 in air. Allowing the phase conversion of the CsSnI 3 film to evolve in ambient air it gives the semiconducting perovskite Cs 2 SnI 6 with a bandgap of 1.48   eV and high absorption coefficient (over 10 5   cm −1 from 1.7   eV). More importantly, the Cs 2 SnI 6 film, for the first time, is adopted as a light absorber layer for a lead-free perovskite solar cell and a preliminary estimate of the power conversion efficiency (PCE) about 1% with open-circuit voltage of 0.51   V and short-circuit current of 5.41   mA/cm 2 is realized by optimizing the perovskite absorber thickness. According to the bandgap and the Shockley-Queisser limit, such inorganic perovskite solar cell with higher efficiency and pronounced stability can be expected by material quality improvement and device engineering.

研究领域: 材料科学 · 光伏技术 · 无机化学 · 半导体材料 · 可再生能源
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