JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
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2019
·Vol. 30
·期 5
·4378-4384
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IF 2.195
Wu Jie,Gao Chunhui,Han Lu,Shen Shanshan,Jia Ming,Wang Li,Jiang Liangxing,Liu Fangyang
Ternary Cu 2 SnS 3 (CTS) is a promising material for thin-film solar cells because it consists of nontoxic and earth-abundant elements. The present paper reports the preparation of monoclinic CTS thin films by a sol–gel solution-based method. The effects of the Cu/Sn atomic ratio on the structure and morphology were investigated. As the atomic ratio of Cu/Sn varied from 1.6 to 2.0, the compactness of the CTS films improved; furthermore, secondary phases, such as SnS, gradually disappeared; and the grain size of the films decreased. The CTS film with a Cu/Sn ratio of 1.9 showed a monoclinic structure with homogeneous morphology and a band gap of 1.12 eV, yielding a power conversion efficiency of 0.58%. These results could pave the way for the development of CTS thin-film solar cells.
研究领域:
材料科学
·
可再生能源
✓ 已验证
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2019
·Vol. 30
·期 19
·17947-17955
·
IF 2.195
Zhao Yun,Han Xiuxun,Xu Bin,Dong Chen,Li Junshuai,Yan Xingbin
Cu 2 SnS 3 (CTS) based thin film solar cells were successfully fabricated through a facile solution processes followed by a post-sulfurization treatment. The influence of sulfurization temperature and time on the structural, compositional, morphological, optical and also the electrical properties of the solar cells were systematically studied. The results showed that the CTS thin films sulfurized at 580 °C would be a void-free and densely packed absorber layer with the grain size to be microns, having the band gap of ~ 1.01 eV. Furthermore, the sulfurization time is the key factor to influence the electronic properties of CTS absorber layer, and thus resulting in the best device performance of PCE = 2.41% by 20 min sulfurization process.
研究领域:
材料科学
·
能源技术
✓ 已验证
DOI
高影响因子
OPTICAL MATERIALS
·
2024
·
IF 3.8
Ying Zhang,Xin Liu,Yonggang Zhao,Zhineng Zhou,Yufei Chen,Congyan Xu,Xinghuan Hu,Xu Su,Lang Wu,Xiaoyu Jin,Shurong Wang
In recent years, there is significant interest in Cu 2 SnS 3 (CTS) thin film solar cells owing to the eco-friendly nature and abundant elemental composition. However, the efficiency prepared in laboratory settings for these solar cell remains relatively low, primarily due to serious open-circuit voltage losses. Cation substitution is one of the strategies to alleviate this problem. In this work, Ag and Ge dual-cation substitution in CTS is proposed, which occupy partial Cu and Sn lattice sites respectively. Investigation reveals that substituting Cu with part Ag increases the band gap slightly, promotes grain growth, and improves crystallinity of CTS films. Simultaneously, Ge incorporation shifts the conduction band upwards to some extent, while reducing grain boundaries, due to increasing the grain size. As a result, the incorporation of 6 % Ag resulted in an optimal efficiency (PCE) of 2.78 %. Furthermore, employing dual-cation substitution with 6 % Ag and 6 % Ge is employed, the CTS device achieved an optimal efficiency of 3.15 %. This work develops the synergistic effect of Ag and Ge dual-cation substitution in CTS device and confirms that this approach can improve device performance, thus providing new research ideas for advancing the development of CTS device.
研究领域:
材料科学
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太阳能电池研究
✓ 已验证
产品关联
DOI
高影响因子
PHYSICA B-CONDENSED MATTER
·
2021
·
IF 2.436
Xin Liu,Xinyu Li,Xiang Li,Qiulian Li,Daoyong Zhang,Na Yu,Shurong Wang
Cu 2 SnS 3 (CTS) thin films are prepared by sulfurizing CTS precursor films which are obtained using a sol-gel technique in air atmosphere. The effect of the sulfurization time on the properties of CTS thin films and solar cells is investigated. The uniform and dense CZT thin film is obtained by sulfuring at 575°Cfor 20 min. The corresponding solar cell shows the highest power conversion efficiency (3.68%), with a short-circuit current density (J sc ) of 30.25 mA/cm 2 , an open circuit voltage (V oc ) of 254 mV, a fill factor (FF) of 47.9%, and a peak external quantum efficiency (EQE) of 70%.
研究领域:
材料科学
·
能源科学
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）