MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
·
2021
·
IF 3.927
Xiao Tian,Jiaxiong Xu
The reported Ag and Mn co-doped Cu 2 ZnSnS 4 thin film has better properties than single-doped Cu 2 ZnSnS 4 . However, the role of Mn in co-doped Cu 2 ZnSnS 4 thin film is still unclear. In this paper, Ag and Mn co-doped Cu 2 ZnSnS 4 thin films with different Mn amounts were prepared by sol-gel method. The crystal phases, morphologies, element compositions, and optical properties of co-doped Cu 2 ZnSnS 4 thin films were characterized to investigate the role of Mn doping. Compared with Ag single-doped Cu 2 ZnSnS 4 thin film, after the incorporation of Mn into Ag-doped Cu 2 ZnSnS 4 , the crystallinity of Cu 2 ZnSnS 4 improves and the micro-strain and dislocation density in the crystal reduce. The valence states of Cu, Zn, Sn, S, Ag, and Mn in co-doped thin film are +1, +2, +4, −2, +1, and +2, respectively. Mn doping can make the grains on the thin film surface enlarge. The MoS 2 interface layer between Cu 2 ZnSnS 4 and Mo becomes thinner and the Urbach energy of Cu 2 ZnSnS 4 decreases after Mn doping. Therefore, Mn in the co-doped Cu 2 ZnSnS 4 thin films shows beneficial effects of enhanced structural, morphological, and optical properties of the films.
研究领域:
材料科学
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光伏技术
✓ 已验证
DOI
高影响因子
JOURNAL OF ELECTRONIC MATERIALS
·
2020
·Vol. 49
·期 10
·6208-6213
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IF 1.774
Chen Ruilan,Cui Guonan,Yang Yanchun,Li Yuemin,Alata H.,Tian Xiao,Tegus O.
Abandoning the traditional deposition of as-prepared Cu 2 ZnSnS 4 (CZTS) thin films in a glove box, a modified thiol-based solution system suitable for deposition in air is described to further reduce device production costs. In this modified approach, metal salts and thiourea are used as the starting materials and are dissolved in a mixed solution of thioglycolic acid and 2-methoxyethanol, forming a homogeneous precursor solution. The as-deposited CZTS thin films are obtained by spin-coating the precursor solution in air, followed by the selenization process to form large-grained Cu 2 ZnSn(S,Se) 4 thin films. Combining the microstructural results with compositional analyses, the optimal selenization conditions for the Cu 2 ZnSn(S,Se) 4 absorber layer were found to be 540°C and 10 min.
研究领域:
材料科学
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薄膜制备
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光电材料
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能源材料
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半导体工艺
✓ 已验证
DOI
高影响因子
Crystals
·
2024
·Vol. 14
·期 10
·910
·
IF 2.4
Meihong Huang,Junhui Lin,Zhiyong Liang,Shaowei Chen,Yuling Zhong,Feng Wang,Bixian Chen,Dongxia Zhang
The addition of flexible Cu2ZnSnS4 (CZTS) thin film solar cells to titanium (Ti) substrates is an attractive way to achieve the low-cost manufacturing of photovoltaics. Prior research has indicated that the appropriate diffusion of Ti elements can enhance the crystalline growth of CZTS films. However, the excessive diffusion of Ti has been shown to adversely affect the photovoltaic performance of CZTS photovoltaic devices. Therefore, it is essential to regulate the diffusion of Ti elements within CZTS thin films to optimize their photovoltaic properties. The tendency for Ti substrate elements to diffuse into CZTS films is also influenced by the activation energy associated with these Ti elements. The sulfurization temperature is posited to be a critical factor in modulating the diffusion and activation energy of Ti elements within CZTS thin films. Consequently, this research investigates the alteration of the sulfurization temperature of CZTS thin films in order to enhance the properties of these thin films and to examine the diffusion behavior of titanium elements. The results reveal that as the sulfurization temperature increases, the diffusion of Ti elements within the CZTS thin films initially increases, then decreases, and subsequently increases again. This pattern suggests that the diffusion of Ti elements is affected not only by the activation energy of the Ti elements but also by the defect hopping distance within the CZTS thin films. Notably, at a sulfurization temperature of 550 °C, the grains at the base of the CZTS thin film demonstrate an increased density, which is associated with a reduced defect hopping distance, thereby hindering the diffusion of Ti elements within the CZTS thin films. Furthermore, at this specific sulfurization temperature, the slope of the current–voltage (I–V) curve for the CZTS/Ti structure reaches its maximum, indicating optimal ohmic contact characteristics.
研究领域:
材料科学
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太阳能技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ELECTRONIC MATERIALS
·
2019
·Vol. 49
·期 3
·1819-1826
·
IF 1.676
Gu Kang,Hao Ruiting,Guo Jie,Aierken Abuduwayiti,Liu Xinxing,Chang Faran,Li Yong,Wei Guoshuai,Liu Bin,Wang Lu,Sun Shuaihui,Ma Xiaole
In this work, the (Ag,Cu) 2 ZnSnS 4 (ACZTS) thin films were fabricated via sputtering with a multi-target to form different layer stacks, i.e., (S1) ZnS/Sn/Cu/Ag/Mo,(S2) ZnS/Sn/Ag/Cu/Mo and (S3) ZnS/Ag/Sn/Cu/Mo. The stacked precursors were sulfurized through a soft annealing, followed by a two-step sulfurization in a chamber filled with N 2 at standard atmospheric pressure. The x-ray photoelectron spectroscopy elemental profile showed a vertical non-uniform distribution of Ag in the film. Based on the results of scanning electron microscopy and electron probe microanalysis, Ag enrichment of the upper surface was beneficial for the grain size. Moreover, a dense, uniform surface could be obtained and the stability of the elemental composition could be maintained. After optimizing the order of the Ag layers, the efficiency of the solar cells increased from 1.30% to 3.65%, an improvement of 181%. The open circuit voltage is increased from 448 mV to 630 mV because of the reduced voids, increased grain size, and reduced Cu Zn antisite defects.
研究领域:
材料科学
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能源技术
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）