JOURNAL OF NANOPARTICLE RESEARCH
·
2015
·Vol. 17
·期 7
·1-7
·
IF 2.184
Wu Yimin,Qiao Xvsheng,Fan Xianping,Zhang Xianghua,Cui Shuo,Wan Jun
In this study, large-scale synthesis of Cu 3 SbSe 4 and Cu 3 Sb 0.98 Sn 0.02 Se 4 nanoparticles with a narrow size distribution was achieved through a rapid-injection route. These nanoparticles showed a monodisperse and quasi-spherical morphology. The Cu 3 SbSe 4 and Cu 3 Sb 0.98 Sn 0.02 Se 4 nanoparticle-based bulk materials were then prepared by hot-pressed sinter of the nanoparticles, and their thermoelectric performances were systematically studied. Due to the reduced lattice thermal conductivity from enhanced phonon scattering at the grain interfaces of the bulk materials, the maximum ZT value of the Cu 3 Sb 0.98 Sn 0.02 Se 4 bulk materials reached 0.50 at 575 K.
研究领域:
材料科学
·
纳米技术
·
热电材料
✓ 已验证
DOI
高影响因子
JOURNAL OF ELECTRONIC MATERIALS
·
2021
·Vol. 50
·期 8
·4880-4886
·
IF 1.938
Wang Wenying,Bo Lin,Wang Yongpeng,Wang Lei,Li Fujin,Zuo Min,Zhao Degang
Incorporating a nanophase into a matrix is an effective approach to improve thermoelectric (TE) properties of bulk TE materials. In this study, graphene nanosheets were introduced into a Cu 3 SbSe 4 matrix and graphene/Cu 3 SbSe 4 composites were prepared by ball milling and rapid hot-press sintering. Microstructure and thermoelectric transport properties of graphene/Cu 3 SbSe 4 composites were analyzed. It was found that the graphene distributed uniformly in the form of layers at the grain boundaries of Cu 3 SbSe 4 matrix. The electrical conductivity of graphene/Cu 3 SbSe 4 composites increased significantly while the Seebeck coefficient decreased with the increasing content of graphene. The thermal conductivity was effectively depressed due to the enhancement of phonon scattering. The maximum thermoelectric dimensionless figure of merit was 0.75 for 2.00% graphene/Cu 3 SbSe 4 composite at 650 K, which was 3.85 times higher than that of pure Cu 3 SbSe 4 .
研究领域:
材料科学
·
热电转换技术
·
纳米复合材料
✓ 已验证
DOI
高影响因子
Nano Energy
·
2020
·
IF 16.602
Boyi Wang,Shuqi Zheng,Qing Wang,Zhiliang Li,Juan Li,Zipei Zhang,Yue Wu,Bensheng Zhu,Siyu Wang,Yuxuan Chen,Liqiang Chen,Zhi-Gang Chen
In this study, we develop a synergistic modulation of the thermal conductivity and power factor of Cu 3 SbSe 4 -based materials through Sn and Zr or Hf co-doping by using a facile microwave-assisted solvothermal method. A series of Cu 3 Sb 1-x M x Se 4 (M = Zr or Hf, x = 0, 0.02, 0.04, 0.06 and 0.08) compounds are firstly synthesized through the microwave-assisted solvothermal method combined with spark plasma sintering (SPS) process. The effect of Zr and Hf doping on the thermoelectric properties of Cu 3 Sb 1-x M x Se 4 (M = Zr or Hf) has been investigated. With increasing the content of Hf and Zr, the thermal conductivity of Cu 3 Sb 1-x M x Se 4 (M = Zr or Hf) is obviously decreased to 0.518 Wm −1 K −1 of Cu 3 Sb 0.92 Hf 0.08 Se 4 and 0.433 Wm −1 K −1 of Cu 3 Sb 0.92 Zr 0.08 Se 4 at 623 K, respectively. In addition, Sn doping further improves the low electrical conductivity and boosts the power factor, yielding a peak zT value of ~0.82 of Cu 3 Sb 0.91 Sn 0.03 Hf 0.06 Se 4 at 623 K, which is ~228% higher than that of the pristine Cu 3 SbSe 4 . Our work provides a new methodology for the decoupling of thermal and electrical properties of the Cu 3 SbSe 4 -based thermoelectric materials .
研究领域:
材料科学
·
热电材料
✓ 已验证
DOI
高影响因子
Journal of Physical Chemistry C
·
2020
·
IF 4.189
Boyi Wang,Shuqi Zheng,Yuxuan Chen,Yue Wu,Juan Li,Zhen Ji,Yuning Mu,Zhibo Wei,Qian Liang,Jingxuan Liang
How to further improve the thermoelectric performance in Cu3SbSe4-based materials after optimizing its carrier concentration is a difficult issue. The present study attempts to address the issue by investigating thermoelectric performance of Cu3SbSe4 after Sn and La codoping, and all the samples were obtained by using a microwave-assisted hydrothermal synthesis method followed with the spark plasma sintering (SPS) process. First, a series of Cu3Sb1–xSnxSe4 (x = 0–0.03) compounds have been synthesized, and the hole carrier concentration obviously increased with increasing the Sn content. In addition, La doping subsequently was employed to the Cu3Sb0.98Sn0.02Se4 sample to further increase its power factor by band flattening, resulting in a typical high power factor of 1156.5 μWm–1 K–2 and zT of 0.67 in Cu3Sb0.92Sn0.02La0.06Se4 at 623 K. Our study provides a novel methodology through regulating its carrier concentration and band structure for designing high thermoelectric performance Cu3SbSe4-based materials.
研究领域:
材料科学
·
物理学
✓ 已验证
产品关联
DOI
高影响因子
Small Methods
·
2023
·
IF 12.4
Shanhong Wan,Shanshan Xiao,Mingquan Li,Xin Wang,Khak Ho Lim,Min Hong,Maria Ibáñez,Andreu Cabot,Yu Liu
Developing cost-effective and high-performance thermoelectric (TE) materials to assemble efficient TE devices presents a multitude of challenges and opportunities. Cu 3 SbSe 4 is a promising p -type TE material based on relatively earth abundant elements. However, the challenge lies in its poor electrical conductivity. Herein, an efficient and scalable solution-based approach is developed to synthesize high-quality Cu 3 SbSe 4 nanocrystals doped with Pb at the Sb site. After ligand displacement and annealing treatments, the dried powders are consolidated into dense pellets, and their TE properties are investigated. Pb doping effectively increases the charge carrier concentration, resulting in a significant increase in electrical conductivity, while the Seebeck coefficients remain consistently high. The calculated band structure shows that Pb doping induces band convergence, thereby increasing the effective mass. Furthermore, the large ionic radius of Pb 2+ results in the generation of additional point and plane defects and interphases, dramatically enhancing phonon scattering, which significantly decreases the lattice thermal conductivity at high temperatures. Overall, a maximum figure of merit ( zT max ) ≈ 0.85 at 653 K is obtained in Cu 3 Sb 0.97 Pb 0.03 Se 4 . This represents a 1.6-fold increase compared to the undoped sample and exceeds most doped Cu 3 SbSe 4 -based materials produced by solid-state, demonstrating advantages of versatility and cost-effectiveness using a solution-based technology.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF MATERIALS SCIENCE
·
2020
·Vol. 56
·期 7
·4727-4740
·
IF 3.553
Deng Shuping,Jiang Xianyan,Chen Lili,Zhang Ziye,Qi Ning,Wu Yichu,Chen Zhiquan,Tang Xinfeng
In this paper, we reported the enhanced thermoelectric properties of Cd and Sn dual-doped Cu 3 SbSe 4 -based material prepared by the vacuum melting combined with spark plasma sintering process. X-ray photoelectron spectroscopy studies revealed the presence of Cu + , Cd 2+ , Sb 5+ , Sn 4+ and Se 2− states of Cu, Cd, Sb, Sn and Se, respectively. All samples exhibited p -type conduction with carrier concentrations varying from 0.54 × 10 18 to 46.42 × 10 18 cm −3 , while carrier mobility changes from 18.2 to 46.6 cm 2 V −1 s −1 at room temperature. Cd doping at Cu sites in the Cu 3 SbSe 4 can reduce the lattice thermal conductivity, while Sn doping at Sb sites is effective to adjust the carrier concentration. The further reduction in thermal conductivity is observed in Cd-Sn co-doped samples resulting from an accumulated effect combining point defects and the secondary-phase CdSe. Consequently, the maximum dimensionless figure of merit ( ZT ) value reaches 0.66 at 623 K for the Cu 2.75 Cd 0.25 Sb 0.94 Sn 0.06 Se 4 sample, which is 190% larger than that of the intrinsic sample ( ZT of 0.35). The findings provide an alternative strategy of boosting the carrier and phonon transports of the Cu 3 SbSe 4 , which is also a meaningful guidance to achieve high performance in other copper-based chalcogenides.
研究领域:
材料科学
·
凝聚态物理
·
无机非金属材料
·
热电转换
·
半导体物理
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2019
·
IF 4.175
Boyi Wang,Yongli Wang,Shuqi Zheng,Shichao Liu,Juan Li,Siyi Chang,Teng An,Weilu Sun,Yuxuan Chen
Pb doped Cu 3 Sb 1-x Pb x Se 4 (x = 0, 0.01, 0.02, 0.04 and 0.06) compounds have been synthesized via microwave-assisted solvothermal method followed by SPS progress, and their thermoelectric properties from 300 K to 623 K has been explored. On one hand, Pb doping in the Sb site improved the electrical properties of Cu 3 SbSe 4 , on the other hand, the second phase PbSe formed at the high doping content (x ≥ 0.02) reduced the thermal conductivity by the phonon scattering. Altogether, the improvement of the electrical properties and decrease of the thermal conductivity results in a promising peak zT of ∼0.52 at 623 K of Cu 3 Sb 0.96 Pb 0.04 Se 4 sample, which is about 80% higher than that of the un-doped Cu 3 SbSe 4 . The current work provides a method which can reduce the thermal conductivity by forming heterojunction and also improve the electrical properties by doping of one element.
研究领域:
材料科学
·
物理学
✓ 已验证
DOI
高影响因子
Nanoscale
·
2018
·Vol. 10
·期 30
·14546-14553
·
IF 7.233
Dandan Xie,Bin Zhang,Aijuan Zhang,Yongjin Chen,Yanci Yan,Hengquan Yang,Guiwen Wang,Guoyu Wang,Xiaodong Han,Guang Han,Xu Lu,Xiaoyuan Zhou
(Ag,Sn) co-doped Cu3SbSe4 nanocrystals are obtained via a facile microwave-assisted solvothermal method, and their thermoelectric properties are investigated in the temperature range from 300 K to 623 K. Sn-doping on Sb sites dramatically increases the carrier concentration and thus the electrical conductivity, promoting the thermoelectric power factor. Further alloying with Ag on Cu sites strongly suppresses the lattice thermal conductivity close to the glass limit. Aside from point defect scattering, such reduction in lattice thermal conductivity largely relies on the formation of Cu2−xSe nanoinclusions, which serve as additional scattering centers for phonons. Overall, the sample with the nominal composition of Cu2.8Ag0.2Sb0.95Sn0.05Se4 reaches a minimum lattice thermal conductivity of 0.27 W m−1 K−1 and a maximum zT of 1.18 at 623 K, which is the best result for the Cu3SbSe4-based materials in the same temperature region. Our results demonstrate that the microwave-assisted synthesis method is capable of fabricating Cu based ternary compounds with high thermoelectric performance.
研究领域:
材料科学
·
热电材料
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Materials Today Energy
·
2020
·
IF 5.604
B. Wang,S. Zheng,Y. Chen,Q. Wang,Z. Li,Y. Wu,J. Li,Y. Mu,S. Xu,J. Liang
This article attempts to realize ultralow lattice thermal conductivity in Cu 3 SbSe 4 by substitution Sb site by IIIB elements (Sc/Y), the facial microwave reaction were chosen to fabricate the above samples. The results show that group IIIB elements combined with multiscale heterostructure can effectively suppress the lattice thermal conductivity in Cu 3 SbSe 4 system, resulting in a typical low value of 0.491 W/m/K and 0.481 W/m/K in Cu 3 Sb 0.92 Sc 0.08 Se 4 and Cu 3 Sb 0.92 Y 0.08 Se 4 at 623 K, respectively. Eventually, a peaking zT value of 0.47 and 0.46 can be obtained for each doping sample. This research highlights a novel strategy by co-constructing multiscale heterostructure and IIIB elements doping for realizing multiscale phonon scattering in Cu 3 SbSe 4 materials.
研究领域:
材料科学
·
热电学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materiomics
·
2023
·
IF 9.4
Sitong Wei,Zhen Ji,Wenhao Li,Shuqi Zheng,Qing Wang,Zhiliang Li,Lu Yu,Sitong Luo,Weiyu Song
Cu 3 SbSe 4 , a copper-based sulfide free of rare earth elements, has received extensive attention in thermoelectric materials. However, its low carrier concentration restricts its widespread application. In this study, a microwave-assisted solution synthesis method was used to produce samples of Cu 3 SbSe 4 , which enabled the formation of CuSe in situ and increased the yield. Through the use of first-principles calculations, structural analysis, and performance evaluation, it was found that CuSe can enhance the carrier concentration and that induced nano-defects have a positive effect on reducing the lattice thermal conductivity. Moreover, doping with Sn decreases the band gap of the system and moves the Fermi level into the valence band, increasing the carrier concentration to 1.15 × 10 −20 cm −3 . Finally, the zT value of the Cu 3 Sb 0.98 Sn 0.02 Se 4 sample was achieved at 1.05 at 623 K when the theoretical yield of a single synthesis was 10 mmol.
研究领域:
材料科学
·
热电学
·
固体物理
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materiomics
·
2022
·
IF 8.589
Sitong Wei,Boyi Wang,Zipei Zhang,Wenhao Li,Lu Yu,Shikai Wei,Zhen Ji,Weiyu Song,Shuqi Zheng
The previous works commonly adjust the carrier concentration through acceptor doping, but at the same time, the decrease of the Seebeck coefficient limits the further improvement of electrical properties in Cu 3 SbSe 4 -based materials. In this work, a microwave-assisted hydrothermal synthesis method was used to synthesize Cu 3 SbSe 4 /TiO 2 hollow microspheres. Part of TiO 2 participates in the reaction, replaces the Sb site of Cu 3 SbSe 4 to form holes, and the rest is dispersed in the matrix in the form of the second phase. The first-principles calculations reveal that the doping of Ti significantly changes the band structure and phonon spectrum, thereby regulating carrier concentration while increasing phonon scattering. In addition, experimental results show that the energy filtering effect generated by the extra-mixed TiO 2 nano particles, which suppresses the decrease of Seebeck coefficient by acceptor doping. Consequently, the highest average power factor 897.5 μW m −1 K −2 and the zT peak value of 0.70 can be obtained in Cu 3 SbSe 4 /6%TiO 2 sample at 298–623 K. This work provides a new sight to improve the thermoelectric properties in Cu 3 SbSe 4 through carrier concentration regulation and nano-phase composition.
研究领域:
材料科学
·
热电学
·
纳米材料
·
固体物理
✓ 已验证
产品关联
DOI
高影响因子
Materials Today Physics
·
2023
·
IF 11.5
Sitong Wei,Lu Yu,Zipei Zhang,Zhen Ji,Sitong Luo,Jingxuan Liang,Weiyu Song,Shuqi Zheng
Cu 3 SbSe 4 -based thermoelectric materials , known for their complex crystal structure and splendid Seebeck coefficient , have garnered significant attention. However, a major challenge in this field is further enhancing the thermoelectric performance while effectively controlling the carrier concentration. In this work, a novel doping strategy is proposed to effectively adjust the energy band structure by Mn doping while simultaneously increasing the carrier concentration and the effective mass of the density of states , thereby optimizing the power factor. Additionally, Sn doping is employed to boost the carrier concentration significantly while strengthening the covalent bonds , thereby improving the samples’ stability. As a result, the Cu 3 Sb 0.92 Mn 0.06 Sn 0.02 Se 4 sample achieves a zT value of 0.74 at 673 K. Moreover, the Cu 3 Sb 0.93 Mn 0.06 Sn 0.01 Se 4 sample exhibits an average zT value of 0.39 within the temperature range of 273–675 K. This research sheds light on an approach for designing high-performance Cu 3 SbSe 4 -based thermoelectric materials by manipulating the carrier concentration and enhancing the covalent bond strength through doping.
研究领域:
材料科学
·
热电学
·
固体物理学
·
化学
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）