Journal of Physical Chemistry C
·
2025
·
IF 3.2
Minghao Zhou,Yanlai Wang
CuGaS2 quantum dots (QDs) with uniform size distribution and monodispersion were successfully synthesized by using the hot injection method. Their microstructure, energy band structure, optical properties, and photocatalytic degradation activity were systematically studied. When the reaction temperature was between 180 and 260 °C, the prepared CuGaS2 QDs exhibited a single chalcopyrite structure. The diameter increased from 5 to 18 nm, while the optical band gap decreased from 3.11 to 2.64 eV. Notably, CuGaS2 QDs synthesized at an optimal temperature of 220 °C, with a mean particle size of 8 nm, demonstrated remarkable photocatalytic activity. Under 60 min of UV-LED irradiation at 365 nm, degradation rates of 93.76% for tetracycline hydrochloride (TCH) and 22.45% for methyl orange (MO) were achieved. These results indicate the tremendous potential of CuGaS2 for water pollution remediation.
研究领域:
环境科学
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材料科学
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DOI
高影响因子
RARE METALS
·
2024
·
IF 9.6
Li Jiang,Fang Yu-Chen,Wang Xiao,Ding Ling-Tong,Wang Zhi-Jun,Yang Xin-Yao,Lancok Jan,Li Wei-Min,Zhong Gao-Kuo,Wang Xin,Xing Zheng,Zhao Shen,Liu Shu-De,Long Xia,Ma Ming
Typical p-n junctions have emerged as a promising strategy for contending with charge carrier recombination in solar conversion. However, the photo-corrosion and unsuitable energy band positions still hinder their practical application for hydrogen production from water in photoelectrochemical systems. Here, an in-situ photo-oxidation method is proposed for achieving self-adapting activation of BiVO 4 -based photoanodes with surface-encapsulated CuGaS 2 particles by the ZnO layer. The self-adapting activation demotes the energy band positions of CuGaS 2 , establishing an S-scheme structure with BiVO 4 , resulting in an efficient p-n junction photoanode. The optimal sample exhibits enhanced photocurrent and an onset potential cathodically shifted by ~ 300 mV compared with BiVO 4 , which is attributed to significantly enhanced charge transport and transfer efficiencies. As expected, it attains the highest photocurrent value of 5.87 mA·cm −2 , aided by a hole scavenger at 1.23 V versus a reversible hydrogen electrode, which significantly surpasses that of BiVO 4 (4.32 mA·cm −2 ).
研究领域:
材料科学
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能源科学
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催化科学
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Nanoscale
·
2018
·Vol. 11
·期 1
·158-169
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IF 7.233
Zheming Liu,Jun Liu,Yanbin Huang,Jing Li,Yi Yuan,Haihang Ye,Dongxu Zhu,Zhijie Wang,Aiwei Tang
Multinary copper-based chalcogenides exhibit significant performance in photocatalytic hydrogen evolution due to their suitable optical bandgap for visible light absorption and environmentally friendly character. Herein, high-quality wurtzite CuGaS2 (CGS) nanocrystals (NCs) were synthesized by using a one-step heating-up process without any injection, and the morphology could be tuned from one-dimensional (1D) to two-dimensional (2D) by precise choice of surface ligands and gallium precursors. The formation mechanism of CGS NCs was studied comprehensively by means of the temporal-evolution of the morphology, crystal structure and optical absorption results. The reaction started from djurleite Cu31S16 NCs, and then proceeded with the formation of Cu31S16–CGS heteronanostructures (HNS), and finally the transformation from HNS to monophasic CGS nanorods took place with prolonging of the synthesis time. The optical bandgap and the energy level of the different-dimensional CGS NCs exhibited a strong dependence on the morphology change, which correlated with the percentage of the exposed {001} and {100} facets. The theoretical calculation based on density functional theory (DFT) revealed that the (001) surface facilitated the charge transport rather than the (100) surface, which was consistent with the electrochemical impedance spectroscopy (EIS) results. As a result, the 2D CGS nanoplates with more exposed {001} facets exhibited an attractive photocatalytic hydrogen production activity under simulated solar illumination as compared to 1D and quasi-2D counterparts. This study demonstrates that control over the dimension of I–III–V group semiconductor NCs could lead to a significant improvement of the photocatalytic hydrogen evolution.
研究领域:
材料科学
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能源化学
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光电催化
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DOI
PubMed
高影响因子
Alexandria Engineering Journal
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2025
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IF 6.8
Wenliang Fan,Qinliang Gao,Yingying Yang,Ligang Wang,Yanlai Wang,Haiyan Yao
In order to discuss the intermediate band (IB) formation mechanism, influence on photoelectric conversion, electron transition process and other photovoltaic properties of Ti-doped p-CuGaS 2 light absorption material, p-CuGaS 2 and Ti-doped p-CuGaS 2 were synthesized through low-cost heat injection and annealing. Structural characterization results indicate that Ti 3 + partially replaced Ga 3+ in the Ti-doped p-CuGaS 2 . Two additional sub-band absorption peaks of Ti-doped p-CuGaS 2 confirm the formation of an IB. The band structures are confirmed by optical analysis and ultraviolet photoelectron spectroscopy, and the electron transition processes—from the valence band (VB) to the conduction band (CB), the valence band (VB) to the IB, and the IB to the conduction band (CB)—are analyzed. The IB formation mechanism is discussed using the band structure and theoretical calculations derived from density functional theory. A thin-film solar-cell model with Ti-doped p-CuGaS 2 as the absorbing layer is created. Numerical simulations based on experimental data show that the photoelectric conversion efficiency increase from 15.06 % for CuGaS 2 to 25.46 % for Ti-doped p-CuGaS 2 because of the IB effect, which enhances the optical absorption and extends the spectral response range. In conclusion, the research findings will establish a fundamental basis for the exploration of intermediate-band solar cells based on copper gallium sulfide.
研究领域:
材料科学
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光伏技术
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理论计算
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Science of Advanced Materials
·
2018
·Vol. 10
·期 6
·808-817
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IF 1.318
Han Boning,Yu Zengchao,Yang Yanmin,Yang Lin,Hu Fan,Li Zhiqiang,Chen Wei
CuGaS2 quantum dots (CGS QDs) with a chalcopyrite crystal structure were synthesized by a hot-injection method. The structural and optical characteristics of the obtained nanocrystals were investigated in the reaction temperature range of 210 °C to 260 °C, it was
found that the CuGaS2 QDs were governed by the surface groups functionalized with 1-dodecanethiol capping ligands in the reaction system. The appropriate reaction temperature favored the decomposition of the surface ligand. CGS QDs synthesized at 230 °C exhibited a narrow particle
size distribution and good crystallinity. In terms of the optical spectra, with an increase in the reaction temperature, the excitonic absorption peaks and band gap emission peaks were systematically red-shifted, thus exhibiting a quantum confinement effect. A mechanism for the growth and
formation of nanoparticles on the basis of the reaction temperature is proposed. Furthermore, the obtained CGS QDs showed promising visible-light-driven photocatalytic activity during degradation of rhodamine 6G.
研究领域:
材料科学
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纳米技术
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光催化
·
化学
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DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
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2026
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IF 12.5
Wenxin Yang,Changsheng Zhao,Shipeng Li,Daqin Chen,Cailong Zheng,Ruidan Zhang,Lu Zhang,Tianmin Wu
A cost-effective CuGaS 2 /ZnS QD synthesis achieves ultrabroadband white emission with a FWHM of 257.9 nm and PLQY of 34.5%. • Cu/Ga ratio and coating temperature regulate defect trapping and carrier relaxation for tunable ultrabroadband emission. • QD-based pc-WLEDs deliver high-quality white light with CIE (0.348, 0.359), CRI of 94.9, CCT of 4915 K, and EQE of 23.8%. Colloidal I-III-VI QDs have emerged as promising candidates for environmentally benign next-generation illumination owing to their facile synthesis, low toxicity, and exceptional optoelectronic properties, yet achieving high-quality white-light emission remains challenging. Herein, we report a cost-effective and sustainable synthesis of CuGaS 2 /ZnS QDs exhibiting ultrabroadband white-light emission with a full width at half maximum (FWHM) of 257.9 nm and a robust photoluminescence quantum yield (PLQY) of 34.5%. Mechanistic investigations reveal that Cu/Ga compositional engineering regulates Cu vacancies, suppressing intrinsic nonradiative recombination while stabilizing shallow-defect-related high-energy emission. Concurrently, temperature-dependent shell growth may regulate interfacial cation redistribution and defect configurations, thereby modulating cation-disorder-associated localized STE-like states, contributing to long-lived low-energy emissions. Through the synergistic suppression of nonradiative recombination and modulation of carrier relaxation and trapping dynamics, the coating temperature redistributes carrier populations between intrinsic and defect-related states, enabling stable dual emission and highly tunable ultrabroadband emission across the entire visible spectrum. Furthermore, phosphor-converted white light-emitting diodes (pc-WLEDs) fabricated by integrating CuGaS 2 /ZnS QDs with red-emitting CuInS 2 /ZnS QDs deliver high-fidelity white-light emission with a color rendering index (CRI) of 94.9 and an external quantum efficiency of 23.8%, closely reproducing the spectral characteristics of natural sunlight and highlighting their promise for solid-state lighting and display technologies. Download: Download high-res image (123KB) Download: Download full-size image
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PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
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2013
·Vol. 210
·期 6
·1098-1102
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IF 1.469
Ping Chen,Mingsheng Qin,Haijie Chen,Chongying Yang,Yaoming Wang,Fuqiang Huang
An intermediate-band (IB) semiconductor CuGa 1− x Cr x S 2 was investigated by the self-consistent many-body GW approach (sc GW ) and further confirmed by the experimental results. The Cr dopant introduced a partially occupied IB, and the density-of-states analysis indicates the electron transfer between the impurities and host lattice would suppress the non-radiative recombination. The CuGa 1− x Cr x S 2 was synthesized by a high-temperature solid-state reaction and the X-ray photoelectron spectroscopy (XPS) indicated the presence of Cr 3+ . Due to the Cr dopant, two additional absorption responses were directly observed in the UV–Vis–NIR absorption spectrum. The further photocatalytic investigations verified the IB absorptions could produce highly mobile electrons and holes to degrade dyes. This material leads to lower-energy photon absorption, which could be a promising candidate for the high-efficiency solar cells.
研究领域:
材料科学
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光伏技术
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半导体物理
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计算材料学
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能源材料
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DOI
高影响因子
ACS Applied Nano Materials
·
2026
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IF 5.8
Kongfu Ou,Jinju Zheng,Jialong Zhao,Kai Wang,Xuanming Qin,Weiyou Yang,Zhentao Du,Hui Fu
Nontoxic CuGaS2 (CGS) quantum dots (QDs) are promising for next-generation displays due to their unique optical properties. However, their wide photoluminescence (PL) full width at half-maximum (FWHM), arising from intraband defect-state-mediated radiative recombination, hinders compliance with the narrow bandwidth requirements for ultrahigh-definition displays. Herein, we introduce a Ga2S3 (GaS) interlayer strategy via a hot-injection method to mitigate lattice mismatch and interface strains between the CGS core and the ZnS shell. Precisely controlling the GaS shell thickness further promotes structural ordering and suppresses sulfur vacancies (VS), thereby reducing nonradiative recombination and enhancing near-band-edge emission. Under optimized conditions, the as-prepared CGS/GaS/ZnS QDs exhibit narrow-band blue emission with a PL quantum yield (QY) of 44% and an FWHM of 24 nm, which is the narrowest value reported to date for Cu-based QDs. As integrated into solid-state light-emitting diode (LED) devices, the QDs yield narrow emission under various operating currents and demonstrate excellent operational stability. These findings highlight the critical role of multishell structures in controlling the defect states and lattice strain in CGS-based QDs, offering a design strategy for next-generation display materials demanding high color purity.
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SOLAR ENERGY
·
2020
·
IF 4.608
Wenbo Ma,Zhenlong Zhang,Mengen Ma,Yuefeng Liu,Gencai Pan,Huiping Gao,Yanli Mao
Copper-based ternary semiconductors have been applied as hole-transporting materials (HTM) for perovskite solar cells (PSCs) in recent years. However, the unavoidable defects of inorganic nanoparticles affect the performance of PSCs. Here, we prepared CuGaS 2 quantum dots (CGS QDs) and employed them as HTM to PSCs. The Cu content of CGS QDs was precisely controlled and its influence on the photoelectric properties of the solar cells was systematically investigated. An optimal power conversion efficiency (PCE) of 17.56% was obtained as the Cu content is 0.8:1 (Cu:Ga, molar ratio). Photoluminescence and electrochemical impedance analyses indicate that the surface defects of Cu-deficient CGS QDs were significantly reduced, thus resulting in effective suppression of carrier recombination between solar cell interfaces. Moreover, the stability of CuGaS 2 -based PSCs is promoted obviously compared with that of the device utilizing Spiro-OMeTAD as HTM. This work demonstrated that reducing the Cu content of CGS QDs can effectively improve the PCE of CuGaS 2 -based solar cells, and CGS QDs with Cu-deficiency can be applied as a potential HTM to PSCs.
研究领域:
材料科学
·
能源科学
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DOI
高影响因子
JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2025
·
IF 9.7
Yue Sun,Chenrui Zhao,Jin Xu,Yazi Liu,Huan He,Feihu Mu,Wei Zhao,Dan Sun,Shaogui Yang,Cheng Sun
The construction of built-in electric field (BIEF) in heterojunction is an effective strategy to enhance solar-driven hydrogen (H 2 ) production by minimizing charge carrier recombination and improving transport kinetics. Herein, p-type ternary sulfide CuGaS 2 (CGS) and n-type g-C 3 N 4 nanosheets (CN) are integrated to construct a p-n heterojunction through a simple co-precipitation method for photocatalytic hydrogen evolution reaction (HER). In situ X-ray photoelectron spectroscopy (in situ XPS), in situ electron paramagnetic resonance (EPR) and density functional theory (DFT) calculations revealed that differences in Fermi levels and carrier concentrations between CGS and CN induce charge migration following an S-scheme mechanism, which aligned well with the intrinsic p-n junction field. The escalated BIEF effect enhances interfacial band bending, drives efficient charge separation, and promotes directional charge transfer. As a result, the optimized 20CN/CGS photocatalyst achieves a high H 2 evolution rate of 563 ± 5 μmol g cat −1 , approximately 3.3 times that of CGS. Additionally, the 20CN/CGS exhibits photothermal properties with further boosted HER rate of 732 ± 6 μmol g cat −1 at 35 °C, achieving a photothermal conversion efficiency (PCE) of 11 ± 2 %. This indicates its potential for exploitation of thermal heat from solar spectrum. This work provides a promising strategy for designing high-performance p-n heterojunction governed by S-scheme charge transfer to boost solar energy conversion.
研究领域:
光催化
·
材料科学
·
可再生能源
·
半导体物理
·
环境科学
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产品关联
DOI
PubMed
高影响因子