ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Yaqiang Wang,Jiaman Wei,Yi Wu,Wei Yu,Xin Guo
Crystalline structures, as the basics of materials, are tightly associated with transport properties. Designing a structure through doping, alloying, and phase engineering to optimize thermoelectric transport properties has always been a crucial strategy in thermoelectrics. In this work, hybrid architectures containing an inherently long-range, nearly cubic framework as well as localized short-range noncubic lattice distortions, are designed in the pristine CuInTe2 chalcopyrites by a unique high-pressure technology. As a result, the long-range order structures motivate degeneracy in electronic bands, markedly improving the electrical transport properties. Meanwhile, suppressed lattice thermal conductivity due to strong phonon scattering is achieved by the short-range disorder structures composed of dense dislocations introduced by pressure. The above incorporation effects lead to a distinguished thermoelectric performance of zT = 1.13 at 773 K for pristine CuInTe2 prepared under 3 GPa. This study demonstrates the bright potential of high pressure as a significant approach in designing bespoke crystalline structures for tuning thermoelectric transport properties.
研究领域:
材料科学
·
热电材料
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产品关联
DOI
PubMed
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2024
·
IF 13.3
Yaqiang Wang,He Zhang,Yi Wu,Youbo Xing,Xin Guo
CuInTe 2 is the focus of much research interest in I-III-VI 2 diamondoid compounds due to its potentially high thermoelectric performance. However, its unmatched transport behaviors among electrical and thermal properties seriously impede enhanced thermoelectric performance. In this work, we demonstrate that high pressure can dual-optimize the electrical and thermal transport properties, leading to enhanced thermoelectric performance in CuInTe 2 with cationic defects. The results indicate that the carrier concentration level is increased while greatly enhancing carrier mobility owing to the influence of high pressure on the band and electronic structures, realizing an excellent power factor of 1406 μWm −1 K −2 . Furthermore, high-pressure treatments and cationic defects can introduce multiple defect structures with various sizes, strongly scattering full-frequency phonons to reduce lattice thermal conductivity. With these great merits enabled by high pressure, the thermoelectric performance of CuInTe 2 with cationic defects is improved and a maximum zT of 1.12 is obtained at 773 K, fully verifying the advantages of high-pressure treatments in terms of improving transport properties.
研究领域:
材料科学
·
物理学
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产品关联
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2025
·
IF 13.2
Jiaman Wei,Wei Yu,Zhijian Li,Jiaxin Hu,Tonghui Wang,Yuan Yu,Xin Guo
The inherent cation disordering and wide bandgap of CuInTe 2 seriously impede carrier concentration optimization, constraining the enhancement of thermoelectric performance. In this work, the inherent cases were addressed by introducing Sb doping and high pressure. Cu Sb bonding was strengthened by incorporating Sb into Te sites, realizing cation ordering while supplying extra hole carriers. Furthermore, with bandgap narrowing induced by applying pressure, the carrier concentration was significantly increased to over ∼10 19 cm −3 , accompanied by optimizing the electronic structure. As a consequence, a high power factor of 1152.4 μWm −1 K −2 at 773 K was achieved. In addition, abundant defect structures were introduced due to Sb doping and external pressure, largely suppressing phonon transport and thus reducing the lattice thermal conductivity to 0.63 Wm −1 K −1 , which approaches the theoretical minimum. Ultimately, a high zT value of 1.14 at 773 K was achieved for CuInTe 1.995 Sb 0.005 prepared under 2.5 GPa. This study demonstrates the efficacy of high pressure and Sb doping in improving the thermoelectric performance of CuInTe 2 , and provides a feasible approach for optimizing cation ordering and band structure in thermoelectrics.
研究领域:
材料科学
·
热电学
·
固体物理
·
能量转换
·
无机化学
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产品关联
DOI
高影响因子
Inorganics
·
2026
·Vol. 14
·期 7
·194
·
IF 3.4
Lin Bo,Yongpeng Wang,Wenying Wang,Wenying Zhou,Xingshuo Liu,Laizeng Shi,Degang Zhao
Incorporating a secondary phase represents a promising strategy for enhancing the thermoelectric performance of materials. In this study, CuInTe2was modified with SnTe powders at various weight fractions (0, 0.5, 1, 2, 4 wt%) and subsequently synthesized via rapid microwave melting. The phase composition and microstructure of the resulting materials were systematically characterized. Structural analyses revealed that the introduction of SnTe induced the incorporation of Sn and Te into the CuInTe2lattice, accompanied by a progressive contraction in lattice parameters. Owing to the spontaneous formation of intrinsic Sn vacancies in SnTe and the regulation of carrier concentration, electrical conductivity of up to 2.7 × 104Sm−1was achieved, representing a 1.7-fold increase over pristine CuInTe2. Coupled with a notable reduction in lattice thermal conductivity (0.9 Wm−1K−1at 700 K), a maximum figure of merit of 0.44 was obtained for the CuInTe2-2 wt% SnTe sample. While the absolutezTvalue is moderate compared to state-of-the-art CuInTe2-based materials, this work establishes the feasibility of microwave melting combined with second-phase incorporation as a rapid and energy-efficient synthesis pathway for CuInTe2modification. These results demonstrate that the introduction of SnTe is a viable strategy for enhancing the thermoelectric performance of CuInTe2.
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DOI
高影响因子
ACS Sustainable Chemistry & Engineering
·
2026
·
IF 7.6
Jiaman Wei,Yi Wu,Wei Yu,Xue Wang,Jiaxin Hu,Zhijian Li,Xin Guo
Low-angle grain boundaries (LAGBs), as a typical microstructure, offer a promising pathway to address the coupling of electron and phonon transport behaviors in thermoelectrics. However, designing such structures to unlock high thermoelectric performance remains rare. In this work, we engineer LAGB structures in chalcopyrite CuInTe2-based alloys by a unique high-pressure sintering technology and unveil the mechanisms underpinning LAGB formation under gigapascal pressures. The energy filtering effect introduced by LAGBs significantly enhances the Seebeck coefficient, coupled with the modulation of Ag doping and Te excess on the electronic structures and carrier concentration, consequently leading to an enhancement in the electrical transport properties. Additionally, high-density dislocations and point defects induced by high pressure and optimized composition strongly suppress phonon transport, lowering the lattice thermal conductivity to 0.49 Wm–1K–1. Benefiting from the synergistic effects of LAGBs and optimized composition, a maximum zT of 1.2 at 773 K is achieved in Cu0.98Ag0.02InTe2.03 prepared under 2.5 GPa, corresponding to a potential single-leg thermoelectric module with a power density of ∼7060 Wm–2 at ΔT = 500 K.
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DOI
高影响因子
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