A novel method for preparing aluminum/aluminum nitride ceramics (Al/AlN) substrates is proposed in this paper. The method included two processes: (1) the surface of AlN was coated with a CuO thick film and sintered; (2) Al foil was put on the pretreated (in process 1) AlN surface and bonded to AlN through pre-heating at 400 °C and final heating at 660 °C in N 2 -H 2 reduction atmosphere. The experimental results obtained by optical and scanning electron microscope (SEM) observations as well as by X-ray diffraction analysis at the cross-sections of the joints and the fracture surfaces , suggest that the reaction mechanism starts with the reaction of CuO with AlN to form CuAlO 2 , when the AlN coated with CuO is heat-treated at high temperature. A Cu layer is produced by the reduction of CuO and Cu diffuses in the Al foil, forming strong Al/AlN joints. Elongated crystals of Al 2 Cu are developed in the reaction zone at the interface between Al and AlN. The results of mechanical tests showed that the peeling-off strength of the Al foil from the surface of the AlN substrate reached a value of 15.4 MPa for the Al/AlN couples produced after 30 min of heat treatment at 660 °C.
Fan Wu,Rajesh Pathak,Junhong Liu,Ronghua Jian,Tiansheng Zhang,Quinn Qiao
A water-stable thin film composed of C6H4NH2CuCl2I was fabricated using spin-coating precursor solutions that dissolved equimolar amounts of C6H4NH2I and CuCl2 in N,N-dimethylformamide. Photoelectrochemical characteristics show that the C6H4NH2CuCl2I film demonstrated a stable photocurrent (∼1 μA/cm2) in an aqueous solution under white light (11.5 mW/cm2) even after 3000 s, while exhibiting a photon-to-current efficiency of 0.093% under AM1.5 (100 mW/cm2) illumination. However, these values were significantly lower than those of the CH3NH3PbX3 (X = I, Cl) film in solid devices. The electron diffusion length L(e–) (373 nm) and hole diffusion length L(h+) (177 nm) in the C6H4NH2CuCl2I photoelectrode were significantly lower than those of CH3NH3PbX3, limiting the photoelectrochemical and photocatalysis performances. Moreover, L(h+) was shorter than L(e–) in the C6H4NH2CuCl2I photoelectrode, resulting in the hole-collecting efficiency [ηc(h+)] being lower than the electron-collecting efficiency [ηc(e–)]. A CuO interlayer was introduced as a hole transport layer for the C6H4NH2CuCl2I photoelectrode, which improved L(h+) and ηc(h+).
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