Tao Chen,Hongwei Ming,Baoli Zhang,Chen Zhu,Jian Zhang,Qi Zhou,Di Li,Hongxing Xin,Xiaoying Qin
Thermoelectric properties of CuSb1–xCdxSe2 (x = 0–0.08) compounds, prepared by vacuum melting, were studied at temperatures of 300–675 K. The results indicate that Cd doping causes both remarkable increase in the Seebeck coefficient and drastic drop of lattice thermal conductivity. The enhancement of thermopower originates mainly from increase of electronic density of states, while the drop of lattice thermal conductivity can be ascribed to enhanced phonon scattering by introduced impurity (dopant) atoms. As a consequence, thermoelectric figure of merit ZT is improved with a maximum ZT = 0.55 (at 675 K) being reached for CuSb0.98Cd0.02Se2, which is around 2.2-fold higher than that of the CuSbSe2 pristine compound. Our results indicate that Cd substitution is a feasible way to improve thermoelectric performance of the CuSbSe2-based system.
Huihong Xu,Han Wan,Rui Xu,Zeqing Hu,Xiaolong Liang,Zhou Li,Jiming Song
Alloying SnTe with a well-designed secondary phase, particularly one with low lattice thermal conductivity, serves as an efficient route to realize excellent thermoelectric performance of inferior SnTe with intrinsically large thermal conductivity, which will eventually accelerate PbTe replacement. Herein, the results validate that CuSbSe2 alloying (SnTe-CuSbSe2) can optimize the thermal transport properties of SnTe and help to advance the thermoelectric performance. Comprehensive evidence from microstructure characterization manifests that multifarious defects, such as Cu-based nanoprecipitates, dislocations and point defects, are induced into the SnTe matrix after CuSbSe2 alloying. These defects act as all-scale phonon scattering sources to achieve full-wavelength phonon scattering and promote a significant reduction in lattice thermal conductivity, and an ultra-low lattice thermal conductivity of 0.40 W m−1 K−1 is obtained for the SnTe-5% CuSbSe2 sample at 823 K. Moreover, deterioration in electrical conductivity also causes a related reduction in electronic thermal conductivity, thereby leading to a substantial reduction in the total thermal conductivity. In addition, the enhancement of m* originating from Cu and Sb doping rises the Seebeck coefficient in SnTe and guarantees a relatively competitive power factor. As a result, based on the significant reduction in the total thermal conductivity, as well as maintenance of the higher power factor, the SnTe-5% CuSbSe2 sample achieves a maximum ZT value of 1.1 at 823 K, which is greatly improved compared with the pristine counterpart (ZT = 0.5). These findings also reveal the tremendous prospect of boosting the thermoelectric performance of SnTe through CuSbSe2 and other I–V–VI2 compounds alloying.
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