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DCJTB
SOLAR ENERGY · 2015 · IF 3.469

The properties of PMMA/DCJTB thin-film luminescent solar concentrator with various thicknesses

Wei Zhou,Moo-Chin Wang,Xiujian Zhao

The PMMA/DCJTB thin-film luminescent solar concentrators (LCSs) with various thicknesses have been successfully prepared with the spin coating process. The properties of PMMA/DCJTB thin-film LSCs with various thicknesses have been studied. The cross-sectional field-emission scanning electron microscopy (FESEM) micrographs show that the thin-films on the glass substrate are very smooth. The thicknesses are 1.36   ±   0.03, 1.93   ±   0.07, 2.80   ±   0.05 and 4.00   ±   0.06   μm. The value of the absolute fluorescence quantum yield ( Φ f ) of the as-prepared LSCs decreases from 59.09% to 51.91% when the PMMA/DCJTB thin-film thickness increases from 1.36 to 4.00   μm. The values of open-circuit voltage ( V oc ), short-circuit current density ( J sc ), fill factor ( FF ), and overall power conversion efficiency ( η ) are 0.51   V, 29.47   mA/cm 2 , 65.54%, and 9.85%, respectively, for the PMMA/DCJTB thin-film LSCs with a thickness of 4.00   μm.

CAS / MDL: 9011-14-7
研究领域: 材料科学 · 光学 · 能源研究
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SOLAR ENERGY · 2015 · IF 3.469

Poly(methyl methacrylate) (PMMA) doped with DCJTB for luminescent solar concentrator applications

Wei Zhou,Moo-Chin Wang,Xiujian Zhao

Poly(methyl methacrylate) (PMMA) doped with various amounts of the organic-dye 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) for luminescent solar concentrator (LSC) applications have been studied. The maximum wavelength of the emission peaks increases from 555 to 561   nm as the doped amount of organic-dye DCJTB increases from 2.08 (sample L3) to 8.33   mg (sample L5), which reveals a slight red-shift effect. The difference between the maximum wavelengths of the absorption and emission spectra ( λ s ) decreases from 58 to 47   nm as the doped amount of organic-dye DCJTB increases from 2.08 to 8.33   mg, which shows the Stokes shift. The short circuit photocurrent ( I sc ) increases from 11.68 to 14.11   mA/cm 2 as the doped amount of organic-dye DCJTB increases from 0 (undoped, sample L0) to 8.33   mg. The optical efficiency ( η opt ) also increases from 41.67% to 60.00% as the doped amount of organic-dye DCJTB increases. The maximum value of the incident photon-to-current conversion efficiency (IPCE) was about 9.0% at 526   nm when doped with 8.33   mg of organic-dye DCJTB (sample L5). The results of the present paper show through a well-conducted study on the optical properties of PMMA doped with organic-dye DCJTB that it can be suitable for LSC applications.

CAS / MDL: 9011-14-7
研究领域: 材料科学 · 光学工程
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JOURNAL OF LUMINESCENCE · 2026 · IF 3.8

Enhanced energy transfer efficiency between CsPbBr3 nanocrystals and organic dye DCJTB based on Ag@SiO2 core-shell nanoparticles

Shuya Ning,Chi Zhang,Naming Zhang,Jin Huang,Kunping Guo,Tao Lei,Fanghui Zhang

Development of efficient fluorescence resonance energy transfer (FRET) is essential for application in optoelectronic and sensing technologies. In this work, we synthesized silica-coated silver nanoparticles (Ag@SiO 2 core-shell NPs) with different shell thicknesses and investigated their effect on a FRET system composed of CsPbBr 3 nanocrystals (NCs) and red dye 4-(Dicyanomethylene)-2-tert-butyl-6-[1,1,7,7-tetramethyljulolidin-4-yl-vinyl]-4H-pyran (DCJTB). Compared to the nanoparticle-free system, doping the CsPbBr 3 : DCJTB system with Ag@SiO 2 core-shell NPs of optimal shell thickness enhanced the fluorescence emission intensity to 3.5 times that of the nanoparticle-free FRET system and improved the FRET efficiency from 28% to 75%. Moreover, the Ag@SiO 2 NPs with the optimal shell thickness can more effectively enhance FRET efficiency than the bare Ag NPs. It is attributed to the fact that the Ag@SiO 2 core-shell NPs can simultaneously avoid quenching effect and effectively enhance the FRET efficiency through the plasmonic properties. This study provides an effective approach for designing highly efficient FRET system and offers a pathway for further enhancing the performance of optoelectronic devices.

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