Nature Communications
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2024
·Vol. 15
·期 1
·1-9
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IF 14.7
Xiao Kai,Wan Jing,Xie Hui,Zhu Yuxuan,Tian Tian,Zhang Wei,Chen Yingxin,Zhang Jinshu,Zhou Lihui,Dai Sheng,Xu Zihan,Bao Wenzhong,Zhou Peng
Embedded Dynamic RAM (eDRAM) has become a key solution for large-capacity cache in high-performance processors. A heterogeneous two transistor capacitorless eDRAM (2T-eDRAM) that combines silicon and molybdenum disulfide (MoS 2 ) is reported to address the short retention issue in conventional gain cell (GC) eDRAMs meanwhile eliminate the pillar capacitor in one transistor and one capacitor (1T1C) eDRAMs. The MoS 2 write transistor with low OFF current (I OFF ) enables long data retention, while the Si read transistor offers high drive current and logic compatibility. This combination enhances data retention by 1000 times and sense margin by 100 times respectively compared to full Si and MoS 2 counterparts. A three-dimensional (3D) design stacking MoS 2 on Si is demonstrated with back-end-of-line (BEOL) process to double integration density. With 6000 s data retention, 35 μA/μm sense margin, 5 ns access speeds, 3D integration and CMOS logic compatibility, this Si-MoS 2 eDRAM marks a significant advancement in memory technology.
研究领域:
半导体器件
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存储技术
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微电子
✓ 已验证
DOI
PubMed
高影响因子
Journal of Materials Chemistry C
·
2014
·Vol. 2
·期 28
·5709-5716
·
IF 0
Hongzhang Liu,Rongcheng Bo,Haifeng Liu,Najun Li,Qingfeng Xu,Hua Li,Jianmei Lu,Lihua Wang
In this paper, two conjugated small molecules (CZ-BT and TPA-BT) were designed and successfully synthesized to investigate the influence of different electron donor moieties on thin-film morphology and their electrical memory device properties. Current–voltage (I–V) curves indicated that both CZ-BT and TPA-BT exhibited stable dynamic random access memory (DRAM) characteristics under appropriate Al evaporation rate condition, but with different threshold voltages, the former lower than the latter due to its better film morphology and closer intermolecular stacking. Furthermore, the performances of the two devices under different Al electrode evaporation rates was also investigated, and the results showed that the CZ-BT-based device still exhibited original DRAM characteristics, whereas the TPA-BT-based device exhibited WORM characteristic when Al electrode evaporation rate was increased to 5 Å s−1. The variation of storage characteristics of TPA-BT could be mainly attributed to its poor film-forming property, and the Al nano-particles would penetrate into the film during the quick evaporation process to form filamentary conduction leading to WORM behavior.
研究领域:
材料科学
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电子工程
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产品关联
DOI
MICROVASCULAR RESEARCH
·
2021
·
IF 3.514
Yi Wang,Yang Yao,Rong Li,Binghui Wu,Huiqin Lu,Jing Cheng,Zhe Liu,Junhui Du
Introduction Choroidal neovascularization (CNV) is the main pathological change of wet age-related macular degeneration. Anti-VEGF drugs are the most commonly used treatment for CNV. The biggest drawback of anti-VEGF drugs is the recurrence of CNV, which requires repeated therapy several times. Autophagy activation may be involved in reducing the therapeutic effect of anti-VEGF drugs. So, this study aims to elucidate the effect and mechanism of anti-VEGF drugs on endothelial autophagy and neovascularization in vitro. Methods RF/6A cells were randomly divided into five groups: The control group, hypoxia group (1% O 2 , 5% CO 2 , 94% N 2 ), anti-VEGF group (group1: Ranibizumab 100 μg/ml; group2: Aflibercept , 400 μg/ml; group3: Conbercept , 100 μg/ml). Autophagy-related proteins were examined by Western blot . RFP-GFP-LC3 was used to detect autophagy and autophagic flow. Subsequently, we used autophagy inhibitors (3-MA or CQ) to inhibit Conbercept induced autophagy and to observe its effect on angiogenesis in vitro. Proliferation, migration, and tube formation of endothelial cells can be used to study neovascularization in vitro. In this research, the CCK-8 assay was used to detect cell proliferation . Cell migration and tube formation were assessed by wound assay and matrix method, respectively. Flow cytometry and Tunel were used to detect cell apoptosis . Finally, the mechanism of Conbercept activated autophagy was studied. Western blot was used to detect the expression of p53 and DRAM (damage-regulated autophagy modulator), upstream activators of autophagy. Results The protein levels of Beclin-1 and LC3-2/1 in Ranibizumab and Conbercept groups were significantly higher than in the hypoxia group( P < 0.05). While the expression of P62 was decreased ( P < 0.05). The autophagic flux was showed the same results. However, Aflibercept showed the opposite effect on autophagy. Compared with the Conbercept group, autophagy inhibitor 3-MA or CQ can further inhibit cell proliferation and promotes cell apoptosis ( P < 0.05). Conbercept significantly inhibited cell migration compared with the hypoxia group (633.08 ± 72.52 vs. 546.33 ± 24.61), while the autophagy inhibitor group (3-MA or CQ) had a more obvious inhibition effect (309.75 ± 86.36 and 263.33 ± 68.67) ( P < 0.05). For tube formation, the number of tube formation was decreased significantly in the Conbercept group (32.00 ± 2.00) compared to the hypoxia group (39.00 ± 1.53) and even further reduced in 3-MA or CQ group (24.00 ± 3.61, 20.00 ± 2.65). The length of master segments in the hypoxia group was 15,668.00 ± 894.11. It was decreased in Conbercept (13,885.34 ± 730.03). In 3-MA or CQ group, the length of master segments dropped further (11,997.00 ± 433.66, 10,617.67 ± 543.21). Compare with the hypoxia group, the expression P53 and DRAM were increased in the Conbercept group ( P < 0.05). Autophagy-related proteins LC-3, Beclin-1, and DRAM were inhibited by P53 inhibitor Pifithrin-α (PFTα) ( P < 0.05). Conclusion Ranibizumab and Conbercept can trigger the autophagy of vascular endothelial cells while Aflibercept can inhibit it. The combination of Conbercept and autophagy inhibitor can significantly inhibit the formation of angiogenesis in vitro. The mechanism of autophagy activation is related to the activation of the p53/DRAM pathway.
研究领域:
眼科学
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细胞生物学
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分子生物学
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药理学
✓ 已验证
产品关联
DOI
PubMed
高影响因子