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F4TCNQ
Journal of Physical Chemistry C · 2023 · IF 3.7

Study on the Fabrication of PEDOT:PSS/Si Hybrid Solar Cells Incorporated with F4TCNQ and VTMO

Chen Yang,Zhiting Luo,Wenhui Ma,Shaoyuan Li,Guoqiang Lv,Kaixin Fu,Kai Liu,Haonan Li,Huizhen Sun,Xiuhua Chen

Poly(3,4-ethylenedioxythiophene) (PEDOT):polystyrenesulfonate (PSS)/Si hybrid heterojunction solar cells (HHSCs) are fabricated by a solution-based synthesis method which combines the advantages of PEDOT:PSS and the superior performance of crystalline silicon. The optimized PEDOT:PSS–2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) hole transport layer (HTL) was used to prepare organosilicon solar cells with a short-circuit current density (Jsc) of 33.33 mA/cm2 and a photoelectric conversion efficiency (η) of 13.23%. The HTL films were found to have increased conductivity by the addition of an electron-accepting dopant (F4TCNQ), obtaining well-defined crystallinity and few defects. In addition, an one-step combination of F4TCNQ with a silane coupling agent (vinyltrimethoxysilane, VTMO) was used to improve the textured device, with a notable efficiency of 14.46% and a Jsc of 33.88 mA/cm2. Our study provides an alternative and easy way to establish organic–inorganic hybrid applications with excellent optoelectronic properties and to gain a deeper understanding of organic semiconductors.

研究领域: 材料科学 · 太阳能 · 有机电子学
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CARBON · 2024 · IF 10.5

Simple ultrasonic mixing to obtain charge transfer dopants of graphene oxide for highly responsive photodetectors and efficient image extraction

Jihong Wang,Wenhao Liu,Qiubo Pan,Lei Zhang,Junchao Ren,Haiping Fang

ABSTRACT Regulating the charge-related properties in materials is highly valuable in the field of electronic devices. Charge transfer doping received significant attention as an efficient method of modulation. Graphene oxide (GO) is often used for regulation due to its abundance of oxygen-containing groups. However, the conventional operations to perform charge transfer doping for GO are complex, expensive and environmentally unfriendly. Here, we propose a charge transfer doping strategy by simply mixing GO suspension with 5 mg/ml 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane (F 4 TCNQ), together with ultrasonic treatment. Notably, the F 4 TCNQ-GO flexible photodetector exhibits outstanding responsivity ( R ) of up to 1.57 × 10 3 A/W in the 650 nm regime, surpassing most of the GO/graphene-based photodetectors reported in the past decade. Moreover, the photodetector successfully realizes in-sensor computing for complex pattern imaging, enabling clear and efficient multi-directional edge extraction. Experiments employing X-ray photoelectron spectra (XPS), X-ray diffraction spectra (XRD), Raman spectra, Ultraviolet-visible (UV-vis) spectra and scanning electron microscopy (SEM) reveal the stable non-covalent binding between GO and F 4 TCNQ through π-π interactions, as well as the electron transfer from GO to the F 4 TCNQ molecule, resulting in the formation of electron accumulation and depletion layers on the F 4 TCNQ molecule and GO, respectively. This finding holds great potential for regulating the electronic properties of a wide range of π-electron-rich two-dimensional materials in the fields of energy, biomedicine, environmental technology, and materials science.

CAS / MDL: 29261-33-4
研究领域: 材料科学 · 电子器件 · 能源技术 · 生物医学 · 环境科技
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LANGMUIR · 2025 · IF 3.9

Band-Engineered MoS2/F4TCNQ Heterojunction for Ultrasensitive SERS Detection of Hg2+ in Water Pollution Monitoring

Yuxin You,Abdur Rahim,Mingyue Li,Xiaoyu Zhang,Min Li,Chengju Guo,Muhammad Saleem,Muhammad Zahid,Xueyou Xu,Mei Liu

As human society continues to develop and progress, the hazards posed to human health by emerging pollutants are becoming increasingly serious due to their unique characteristics such as specific toxicity, persistence, and bioaccumulation. It is critical to develop highly sensitive, renewable nonmetallic surface-enhanced Raman scattering (SERS) platforms for environmental monitoring, particularly for the trace detection of mercury ions in water. Here, we utilized a band-tunable F4TCNQ/MoS2 heterojunction achieving an ultrasensitive limit of detection (LOD) of 2.77 × 10–11 M for Hg2+ in pure water. The enhancement factor (EF) for the 989 cm–1 peak was found to be approximately 4.2 × 105, while that for the 722 cm–1 peak was 2.8 × 105. Such sensitivity arises due to the interfacial charge transfer (CT) and the weak electromagnetic interaction between the heterojunction and Hg2+ with the Raman reporter molecule 4-methylpyridine (4-MPy). The substrate exhibits remarkable selectivity against interfering ions (Ca2+, Mg2+, Pb2+, etc.,), along with high reproducibility (RSD < 9.33%), and stability up to one month under environmental conditions. The results indicate that the detection sensitivity is comparable to or even better than that achieved with the conventional SERS substrate to enable specific detection of Hg2+. Moreover, the substrate can be reused through photocatalytic degradation showing a 30 min duration for complete removal of Hg2+, enabled by the F4TCNQ/MoS2 heterostructure. This offers significant advantages for detecting Hg2+ in complex environmental samples, such as seawater and soil leachate, while also proving valuable for environmental monitoring and food safety applications.

CAS / MDL: 15060-55-6
研究领域: 环境科学 · 分析化学 · 纳米材料学 · 光催化 · 污染物检测
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Advanced Science · 2024 ·Vol. 11 ·期 48 ·2409838 · IF 14.3

V-Shaped Heterostructure Nanocavities Array with CM and EM Coupled Enhancement for Ultra-Sensitive SERS Substrate

Abdur Rahim,Liqi Ma,Muhammad Saleem,Baiju Lyu,Muhammad Shafi,Yuxin You,Mingyue Li,Xiaoyu Zhang,Mei Liu

The field of semiconductor surface-enhanced Raman scattering (SERS) substrates has experienced significant advancements, leading to a wide range of applications in several fields. However, the quest for new ultra-sensitive semiconductor SERS materials is still of utmost importance. In this regard, an efficient and novel substrate, F 4 TCNQ/MoS 2 heterostructure is introduced, assisted by V-shaped aluminum anodic oxide (AAO) nanocavities with different depths. Utilizing the efficient charge transfer of organic/inorganic semiconducting heterostructure and the photoconfinement capability of the nanocavity structure of the AAO nanotemplate, excellent stability, fast sensing, enhanced Raman, and photodegradation activities are achieved. Due to its unique 3D structure, the optimized F 4 TCNQ/MoS 2 /AAO with 1500 nm depth achieves ultra-high sensitivity detection of 9.0×10 −16 M for conventional probe molecules. Furthermore, precise detection of water contaminants is observed for the first time with a V-shaped heterostructure due to combined organic/inorganic features that differ significantly from conventional MoS 2 structures or other metal/inorganic or inorganic/inorganic semiconductors. This research presents a novel and versatile strategy for SERS and demonstrates its diverse potential performance in practical applications.

CAS / MDL: 1193-02-8 15060-55-6
研究领域: 材料科学 · 光谱学 · 纳米技术
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ACS Photonics · 2026 · IF 6

Synergistic Effect of PC71BM and F4TCNQ as Multifunctional Passivation Layer for High-Efficiency Perovskite Solar Cells with Superior Stability

Qingshui Zheng,Zeyuan Zhao,Zhihang Jin,Yu Zou,Anling Tong,Pengxu Chen,Ruowei He,Yang Wang,Weihai Sun,Chaoping Fu,Jihuai Wu,Sheng Yang

The migration of iodide ions and the inefficient interfacial charge transport continue to pose significant challenges to power conversion efficiency (PCE) and stability of perovskite solar cells (PSCs). In this study, we innovatively introduce a multifunctional passivation method that involves doping the P-type material 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) into the fullerene derivative (6,6)-Phenyl C71-butyric acid methyl ester (PC71BM). The introduction of F4TCNQ not only enhances the ability of PC71BM to passivate uncoordinated Pb2+ ions but also promotes a uniform distribution of the passivation layer. Results indicate that this passivation layer effectively immobilizes iodide ions, preventing their random movement within the PVK films and reducing iodine-related defects. Additionally, by raising the Fermi level and enhancing the P-type characteristics, it improves hole extraction and transport, thereby reducing nonradiative recombination in the target device. Consequently, the n-i-p PSCs with the mixed passivation layer achieved a champion PCE of 25.87%, with a higher open-circuit voltage (1.182 V) and a remarkable fill factor (84.64%). Notably, in large-scale manufacturing, n-i-p mini-modules reached a commendable PCE of 22.34%. Furthermore, these devices demonstrated superior stability, maintaining over 95% of their initial efficiency after 900 h of maximum power point (MPP) tracking under ISOS-L-1 standards.

CAS / MDL: 57-13-6
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Frontiers in Chemistry · 2020 · IF 3.693

Trap-Filling of ZnO Buffer Layer for Improved Efficiencies of Organic Solar Cells

Li Mingguang,Li Jing,Yu Longsheng,Zhang Ying,Dai Yizhong,Chen Runfeng,Huang Wei

Trap-assisted recombination loss in the cathode buffer layers (CBLs) is detrimental to the electron extraction process and severely restricts the power conversion efficiencies (PCEs) of organic solar cells (OSCs). Herein, a novel organic–inorganic hybrid film composed of zinc oxide (ZnO) and 2,3,5,6-tetrafluoro-7,7,8, 8-tetracyanoquinodimethane (F4TCNQ) is designed to fill the intrinsic charge traps of ZnO-based CBLs by doping F4TCNQ for high-performance inverted OSCs. Thus, constructed ZnO:F4TCNQ hybrid film exhibits enhanced surface hydrophobicity and adjustable energy levels, providing favorable interfacial condition for electron extraction process. Consequently, trap-assisted recombination loss in the CBLs was efficiently suppressed, leading to the significantly improved fill factor and PCEs of both fullerene- and non-fullerene-based OSCs using the ZnO:F4TCNQ hybrid CBLs. This work illustrates a convenient organic acceptor doping approach to suppress the internal charge traps of traditional inorganic CBLs, which will shed new light on the fabrication of high-performance CBLs with facile electron extraction processes in inverted OSC devices.

研究领域: 材料科学 · 能源科学 · 光电转换
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Journal of Materials Chemistry C · 2025 · IF 5.1

P-type doping strategy for hole-transport polymer in blue perovskite light-emitting diodes

Jian Chen,Yifan Wang,Jiajia Gao,Jialiang Tian,Yuelong Ma,Wei Shen,Kun Cao,Yingying Fu,Lihui Liu,Shu-Fen Chen

The inferior hole injection efficiency in blue perovskite light-emitting diodes (PeLEDs), caused by the large hole injection barrier and low hole mobility of conventional hole transport layers (HTLs), remains a critical limitation to achieving higher external quantum efficiency (EQE) and device stability. To address this challenge, we propose a rational interfacial engineering strategy employing p-type molecular doping to optimize device performance. By incorporating 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (F4TCNQ) as a dopant in the poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine) (TFB) HTL, we significantly enhance hole mobility from 3.96×10⁻⁶ to 1.13×10⁻⁴ cm²/(V·s) and adjust the highest occupied molecular orbital energy level from -5.40 to -5.56 eV, facilitating efficient hole carrier injection and transport. Additionally, perovskite films deposited on the doped HTL exhibit improved crystallinity and a reduced defect density from 3.47×10¹⁸ to 3.18×10¹⁷ cm⁻³. Owing to these synergistic improvements, the optimized blue PeLEDs achieve a maximum EQE of 4.57% with an emission peak at 484 nm, representing a 4.02-fold enhancement over the pristine device. This work highlights the effectiveness of molecular doping in tailoring interfacial properties and balancing charge transport for high-performance blue PeLEDs.

CAS / MDL: 7787-69-1
研究领域: 材料科学 · 光电子学 · 高分子科学 · 半导体器件 · 纳米技术
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