ADVANCED MATERIALS
·
2025
·Vol. 37
·期 27
·2420505
·
IF 26.8
Xin Gao,Kaiming Wang,Kun Zhai,Junxin Yan,Dongdong Yue,Congpu Mu,Zhipeng Yu,Yingchun Cheng,Anmin Nie,Zhongyuan Liu
Emergent magnetism in 2D materials has attracted significant attention due to their intrinsic magnetic order, which persists down to the monolayer limit, and their potential applications in spintronic devices. In particular, domain structure modulation plays a crucial role in 2D magnet-based nano-spintronic devices. However, the fabrication and modulation of the desired domain structure, along with the establishment of reliable electrical write/read operations, remain significant challenges. Herein, a unique structure-shaping way to modulate domain structure is demonstrated via folding a continuous flat Fe 3 GaTe 2 nanosheet. Accompanied by magnetic domain structure transformation, the symmetric butterfly-shaped magnetoresistance (MR) curve changes to an antisymmetric field-dependent magnetoresistance. Notably, the MR exhibits either the same or opposite sign at geometrically equivalent positions, depending on the relative angle of the current flow and domain wall direction. The MR behavior with respect to sweeping field and electrodes position is due to the circulating current in the vicinity of the domain wall. More importantly, this new concept of manipulating domain structure and its associated magneto-transport behavior can inspire novel spintronic devices fabrication and application.
研究领域:
凝聚态物理
·
材料科学
·
自旋电子学
·
纳米电子学
·
磁性
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ADVANCED MATERIALS
·
2026
·
IF 29.1
Bo Zhang,Lianying Zhu,Zhiwen Chen,Ying Zhang,Bosen Wang,Zhipeng Wang,Shaoxiong Wu,Xiaping Chen,Feng Zhang,Maoyuan Wang,Huolin Huang,Bin Xiang,Deyi Fu,Rong Zhang
Ferromagnetic van der Waals (vdW) heterostructures are pivotal for next-generation spintronics, especially in realizing novel functionalities like antisymmetric magnetoresistance (ASMR). While ASMR holds immense potential for multi-state memory and logic operations, achieving stable performance across a broad range of conditions and realizing diverse multi-state functionalities remain key challenges. Here, we report the demonstration of multi-state ASMR signals in a Fe 3 GaTe 2 /InSe/Fe 3 GaTe 2 vdW heterostructure, effectively operating up to 320 K. Intriguingly, the conventional three-state ASMR undergoes a unique temperature-induced shape reversal, which is precisely correlated with the temperature-dependent crossover of the coercive fields of the two Fe 3 GaTe 2 layers. Through adapted measurement configurations, an unconventional four-state ASMR, featuring distinct high, intermediate-1, intermediate-2, and low resistance states, has been obtained, holding significant promise for enhancing multi-state memory density. Crucially, the device exhibits superior signal stability across wide variations in bias current (0.01–100 µA ) and magnetic field angle (0 ° –360 ° ). Programmable prototype devices demonstrating highly distinguishable states are also presented. The junction resistance of our devices is only a few kiloohms owing to the perfect Fermi level alignment between Fe 3 GaTe 2 and InSe, making them highly compatible with complementary metal–oxide–semiconductor circuits. This work lays a solid foundation for future stable multi-state memory applications.
✓ 已验证
DOI
PubMed
高影响因子
npj 2D Materials and Applications
·
2024
·Vol. 8
·期 1
·1-7
·
IF 9.1
Wang Mingjie,Lei Bin,Zhu Kejia,Deng Yazhou,Tian Mingliang,Xiang Ziji,Wu Tao,Chen Xianhui
Two-dimensional (2D) magnetic materials are of not only fundamental scientific interest but also promising candidates for numerous applications. However, so far only a few intrinsic magnets with long-ranged order down to the 2D limit have been experimentally established. Here, we report that the intrinsic 2D ferromagnetism can be realized in van der Waals (vdW) Fe 3 GaTe 2 nanoflake down to monolayer. By measuring the Hall resistance and magnetoresistance, we demonstrate that the Fe 3 GaTe 2 monolayer exhibits 2D hard ferromagnetism with record-high Cure temperature ( T c ) of 240 K for the monolayer of known intrinsic ferromagnets. Both of square-shaped hysteresis loops with near-vertical jump in anomalous Hall effect (AHE) and the negative magnetoresistance (NMR) behavior with an applied out-of-plane magnetic field reveal robust perpendicular magnetic anisotropy (PMA) in Fe 3 GaTe 2 nanoflakes down to the monolayer limit. Furthermore, we find the intrinsic mechanism that stems from the Berry curvature of electronic bands dominates AHE of nanoflakes in the low temperature range. Our results not only provide an excellent candidate material for next-generation spintronic applications, but also open up a platform for exploring physical mechanisms in 2D ferromagnetism.
研究领域:
凝聚态物理
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材料科学
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纳米技术
✓ 已验证
DOI
高影响因子
Nature Communications
·
2022
·Vol. 13
·期 1
·1-8
·
IF 17.694
Zhang Gaojie,Guo Fei,Wu Hao,Wen Xiaokun,Yang Li,Jin Wen,Zhang Wenfeng,Chang Haixin
The absence of two-dimensional (2D) van der Waals (vdW) ferromagnetic crystals with both above-room-temperature strong intrinsic ferromagnetism and large perpendicular magnetic anisotropy (PMA) severely hinders practical applications of 2D vdW crystals in next-generation low-power magnetoelectronic and spintronic devices. Here, we report a vdW intrinsic ferromagnetic crystal Fe 3 GaTe 2 that exhibits record-high above-room-temperature Curie temperature ( Tc , ~350-380 K) for known 2D vdW intrinsic ferromagnets, high saturation magnetic moment (40.11 emu/g), large PMA energy density (~4.79 × 10 5 J/m 3 ), and large anomalous Hall angle (3%) at room temperature. Such large room-temperature PMA is better than conventional widely-used ferromagnetic films like CoFeB, and one order of magnitude larger than known 2D vdW intrinsic ferromagnets. Room-temperature thickness and angle-dependent anomalous Hall devices and direct magnetic domains imaging based on Fe 3 GaTe 2 nanosheet have been realized. This work provides an avenue for room-temperature 2D ferromagnetism, electrical control of 2D ferromagnetism and promote the practical applications of 2D-vdW-integrated spintronic devices.
研究领域:
材料科学
·
凝聚态物理
✓ 已验证
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2025
·Vol. 35
·期 28
·2501047
·
IF 19
Jiantao Du,Kun He,Junyang Chen,Yangkun He,Miao He,Xitong Xu,Zhe Qu,Lin Gu,Qinghua Zhang,Xidong Duan,Mingyuan Huang,Chengbao Jiang,Bo Li,Shengxue Yang
Van der Waals (vdW) magnets have opened up new avenues for exploring next-generation spintronic devices. The exchange bias (EB) effect plays an undisputed role in ensuring accurate data retrieval in spintronic devices. However, the unsustainably weak EB field ( H EB ) introduced by field cooling and the high-complexity of devices incompatible with silicon-based industry, limit the application of related vdW spintronic devices. Here, a compatible and simple method is reported for constructing Fe 3 GaTe 2 /oxidized Fe 3 GaTe 2 heterostructures and achieving a spontaneous EB effect with a low-complexity device configuration. The spontaneous EB effect exhibits undecayed, tunable, and giant H EB of 2550 Oe at 3 K, along with a relatively high blocking temperature of 220 K. Field cooling and cross-sectional microstructure studies suggest that the EB effect arises from antiferromagnetic exchange coupling between Fe 3 GaTe 2 and spin clusters frozen by α-Fe 2 O 3 at the disordered interface. This work provides a unique avenue for customizing, integrating, and producing related spintronic devices.
研究领域:
自旋电子学
·
凝聚态物理
·
材料科学
·
磁性
✓ 已验证
产品关联
DOI
高影响因子
Science Advances
·
2023
·Vol. 9
·期 49
·
IF 13.6
Chao Yun,Haoran Guo,Zhongchong Lin,Licong Peng,Zhongyu Liang,Miao Meng,Biao Zhang,Zijing Zhao,Leran Wang,Yifei Ma,Yajing Liu,Weiwei Li,Shuai Ning,Yanglong Hou,Jinbo Yang,Zhaochu Luo
The discovery of magnetism in van der Waals (vdW) materials has established unique building blocks for the research of emergent spintronic phenomena. In particular, owing to their intrinsically clean surface without dangling bonds, the vdW magnets hold the potential to construct a superior interface that allows for efficient electrical manipulation of magnetism. Despite several attempts in this direction, it usually requires a cryogenic condition and the assistance of external magnetic fields, which is detrimental to the real application. Here, we fabricate heterostructures based on Fe3GaTe2 flakes that have room-temperature ferromagnetism with excellent perpendicular magnetic anisotropy. The current-driven nonreciprocal modulation of coercive fields reveals a high spin-torque efficiency in the Fe3GaTe2/Pt heterostructures, which further leads to a full magnetization switching by current. Moreover, we demonstrate the field-free magnetization switching resulting from out-of-plane polarized spin currents by asymmetric geometry design. Our work could expedite the development of efficient vdW spintronic logic, memory, and neuromorphic computing devices.
研究领域:
自旋电子学
·
材料科学
·
凝聚态物理
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）