Nano Research
·
2024
·
IF 9.5
Yan Danni,Dong Yuhui,Wei Naiwei,Yang Shuai,Zhu Hong,Gu Wanzhong,Zou Yousheng,Zeng Haibo
Quaternary Ag-In-Ga-S (AIGS) quantum dot (QD) is considered a promising, spectral-tunable, and environmentally friendly luminescent display material. However, the more complex surface defect states of AIGS QDs resulting from the coexistence of multiple elements lead to a low (< 60%) photoluminescence quantum yield (PLQY). Here, we develop a novel convenient method to introduce Z-type ligands ZnX 2 (X = Cl, Br, I) for passivating the surface defects of AIGS QDs to dramatically enhance the PLQY and stability without affecting the crystalline structure and morphology. Results show that the addition of ZnCl 2 during the purified process of AIGS QDs leads to a 3-fold increase of PLQY (from 28.5% to 87%). Impressively, the highest PLQY is up to a recorded value of 92%, which is comparable to typical heavy metal QDs. Exciton dynamics studies have shown that the rapid annihilation process of excitons in treated QDs is inhibited. We also confirm that the improvement in PLQY is a result of the effective passivation of the non-coordinating atom on the QD surface by building a new bonding between sulfur dangling and Zn 2+ . The realization of high PLQY will further promote the application of AIGS QDs in luminescent displays.
研究领域:
材料科学
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纳米技术
·
光电技术
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DOI
高影响因子
ChemNanoMat
·
2024
·
IF 2.6
Haibo Zeng,Shuai Yang,Danni Yan,Hong Zhu,Naiwei Wei,Yuhui Dong,Yousheng Zou
In recent years, Ag-In-Ga-S (AIGS) quaternary quantum dots (QDs) have garnered significant attention as a novel class of environmentally friendly and non-toxic QDs. However, the hydrothermal synthesis method for aqueous QDs has been plagued by issues such as inconsistent size, subpar crystallinity, and low photoluminescence quantum yield (PLQY). Herein, we developed a dual ligand strategy based on the hard and soft acids and bases (HSAB) theory to synthesize aqueous AIGS QDs with an impressive PLQY of up to 64.3%, currently the highest value among hydrothermal-synthesized uncoated I-III-VI QDs. The QDs exhibit better crystallinity, narrow size distribution (3.07 ± 0.31 nm), and remarkable stability. The mechanism underlying this dual ligand strategy was further elucidated, shedding light on the distinct influences of different ligands on the growth of QDs. The high PLQY contributes to the further application of aqueous AIGS QDs in luminescent displays and the field of biology. Meanwhile, this ligand strategy has broad reference significance for efficient preparation of other water-soluble QDs.
研究领域:
材料科学
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纳米技术
·
化学
·
光电技术
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生物技术
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产品关联
DOI
高影响因子
Solar RRL
·
2024
·
IF 6
Chenxi Zhao,Bowen Liu,Fuyan Chen,Jiaxin Gao,Xinan Shi,Daocheng Pan
Cu(In, Ga)(S, Se) 2 (CIGSSe) solar cell is one of the most promising thin-film solar cells with a record power conversion efficiency (PCE) of 23.6%. Conventional CIGSSe thin-film solar cells are usually fabricated on Mo-coated soda-lime glass substrate, thereby, the sunlight on the rear side cannot be utilized by the monofacial CIGSSe solar cells owing to the opacity of the Mo electrode. CIGSSe solar cells fabricated on transparent conductive oxide (TCO) electrode enable to fabricate bifacial solar cells, which can generate power on both sides of solar cells, so that bifacial solar cells have a high potential application in building-integrated photovoltaics. However, the PCEs of CIGSSe solar cells fabricated on TCO substrates are significantly lower than those of ones on Mo substrates. In this article, bifacial CIGSSe solar cells on fluorine-doped tin oxide (FTO) substrate are fabricated by using an ionic liquid-assisted solution approach and utilizing a MoO 3 thin film as an interface layer between FTO and CIGSSe absorber layer, yielding a front-side PCE of 9.73% and a back-side PCE of 1.77%.
研究领域:
材料科学
·
光伏技术
·
可再生能源
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DOI
高影响因子
ACS Applied Materials & Interfaces
·
2023
·
IF 9.5
Shuai Zhang,Linxiang Yang,Gaoyu Liu,Shengli Zhang,Qingsong Shan,Haibo Zeng
I–III–VI quantum dots (QDs) and derivatives (I, III, and VI are Ag+/Cu+, Ga3+/In3+, and S2–/Se2–, respectively) are the ideal candidates to replace II–VI (e.g., CdSe) and perovskite QDs due to their nontoxicity, pure color, high photoluminescence quantum yield (PLQY), and full visible coverage. However, the chaotic cation alignment in multielement systems can easily lead to the formation of multiple surface vacancies, highlighted as VI and VVI, leading to nonradiative recombination and nonequilibrium carrier distribution, which severely limit the performance improvement of materials and devices. Here, based on Zn–Ag–In–Ga–S QDs, we construct an ultrathin indium sulfide shell that can passivate electron vacancies and convert donor/acceptor level concentrations. The optimized In-rich 2-layer indium sulfide structure not only enhances the radiative recombination rate by preventing further VS formation but also achieves the typical DAP emission enhancement, achieving a significant increase in PLQY to 86.2% at 628 nm. Moreover, the optimized structure can mitigate the lattice distortion and make the carrier distribution in the interior of the QDs more balanced. On this basis, red QD light-emitting diodes (QLEDs) with the highest external quantum efficiency (EQE; 5.32%) to date were obtained, providing a novel scheme for improving I–III–VI QD-based QLED efficiency.
研究领域:
材料科学
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纳米技术
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光电子学
·
光子学
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产品关联
DOI
PubMed
高影响因子
ACS Nano
·
2026
·
IF 16
Xiulin Xie,Gaoyu Liu,Yu Zhang,Yiqing Yang,Wentao Niu,Ouyang Lin,Yangyang Bian,Jin Lu,Shengli Zhang,Aiwei Tang
I–III–VI group semiconductor nanocrystals (NCs) with narrow-bandwidth emission have emerged as promising candidates for display technologies due to their tunable emission wavelength and eco-friendly composition. Herein, Ga-rich Ag–In–Ga–S (AIGS) NCs exhibited a narrow photoluminescence emission with a full width at half maximum (fwhm) of 29 nm, which was derived from In-rich Ag–In–Ga–S NCs with an fwhm of 113 nm via a cation exchange strategy. The evolution process was studied systematically using steady- and transient-state spectroscopic techniques, revealing that the narrow photoluminescence (PL) bandwidth primarily originated from free-to-bound radiative recombination. The result was consistent with first-principles calculations. Furthermore, the electroluminescent devices based on AIGS NCs showed a record narrow electroluminescent bandwidth of less than 30 nm, and the maximum external quantum efficiency (EQE) could reach up to 1.2%.
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DOI
PubMed
高影响因子
Advanced Optical Materials
·
2024
·Vol. 12
·期 23
·2400762
·
IF 8
Wentao Niu,Xiulin Xie,Zhong Chen,Ruixin Sun,Yu Li,Shuaibing Wang,Yu Zhang,Chunhe Yang,Aiwei Tang
Recently, I-III-VI type quantum dots (QDs) have attracted considerable attention in display technology due to their large-scale tunable emission and environmentally friendly characteristics. However, within this family, narrow-bandwidth Cu-based QDs have rarely been reported. Herein, the synthesis of narrow-bandwidth blue-emitting Cu-Ga-S (CGS)-based QDs is reported by a hot-injection method for the first time, boasting a narrow full width at half-maximum (FWHM) of 29 nm, closely approaching that of traditional Cd-based QDs. Through precisely controlling the temperature of nucleation stage, CGS-based QDs showcase a representative blue emission at 475 nm, featuring the narrowest FWHM and a photoluminescence quantum yield (PLQY) of 32%. Besides, the femtosecond transient fluorescence (fs-TA) characterization indicates that the narrow-bandwidth luminescence is attributed to band-to-hole recombination rather than donor-acceptor pair (DAP) recombination. The work opens a new avenue for narrow-bandwidth I-III-VI QDs, offering increased potential for applications in blue-light-emitting devices.
研究领域:
材料科学
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光学
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产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
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2016
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IF 3.014
Yong Cui,Zhe Zhang,Xu Du,Wei Liu,Shi Liu,Yulin Deng,Xiaogu Huang,Gang Wang
Hybrid solution process is a powerful liquid deposited strategy merging the advantage of molecular precursor solution and nanocrystals ink. A novel hybrid solution approach is presented to fabricate Cu(In,Ga)(S,Se) 2 (CIGSSe) absorber layer using fully dissolved CIGS precursor solution and the CIGS nanocrystals. Such attractive strategy could significantly improve the single deposited thickness and enhance the quality of as-prepared CIGS film compared with the pure CIGS molecular precursor solution and the CIGS nanocrystals ink. Photovoltaic absorber layers based on CIGSSe chalcopyrite structure show the high-quality microstructural performance and are incorporated into solar cells with power conversion efficiency of 10.19%. The high performance of resulted optoelectronic devices represents a chance to extend the hybrid solution process to other inorganic semiconductor thin film solar cells.
研究领域:
材料科学
·
能源技术
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产品关联
DOI
高影响因子
JOURNAL OF LUMINESCENCE
·
2025
·
IF 3.6
Yikun He,Yongheng Fu,Danni Yan,Shuai Yang,Li Zhang,Jiajun Xu,Feifan Song,Xiaokun Zhang,Yuhui Dong,Yousheng Zou
In recent years, Ag-In-Ga-S (AIGS) quantum dots (QDs) have received widespread attention as non-toxic and environmentally friendly QDs. However, the low photoluminescence quantum yield (PLQY) restricts the further application of AIGS QDs in optoelectronic devices. Here, we constructed quinary Ag-In-Zn-Ga-S (AIZGS) QDs with outstandingly high PLQY of 92.1% by doping Zn into AIGS QDs via an economical and environment-friendly hydrothermal method. The synergistic action of the internal doped Zn providing radiative recombination channels and the surface doped Zn passivating the non-radiative recombination defects leads to enhanced PLQY of QDs. The corresponding QDs backlight films fabricated based on AIZGS QDs and polyvinyl alcohol (PVA) also show a high PLQY of 82.7%. The improved PLQY of AIZGS QDs is comparable to other toxic metal-containing QDs in the same spectrum. Furthermore, the PL peak wavelength of the QDs can be tuned from 545 nm to 616 nm by varying the Ag/In ratio. The realization of high PLQY in aqueous AIZGS QDs and its backlight films contributes to the application in the field of eco-friendly backlight display devices.
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DOI
高影响因子
Advanced Optical Materials
·
2026
·
IF 7.2
Wanling Mao,Siyong Wang,Li Zhang,Yujia Luo,Yuyao Feng,Yunhai Xiong,Yixuan He,Yuhui Dong,Yousheng Zou,Haibo Zeng
Low-toxicity quantum dots (QDs) based on group I-III-VI elements have attracted significant interest due to their color-tunability for wide-gamut displays. Nevertheless, the width of the blue-emitting peak remains considerably broader than those of the green and red counterparts, resulting in degraded color purity, restricted gamut coverage, and diminished energy efficiency in blue-emitting devices. Here, we report spectroscopically pure blue QDs (λ = 465 nm) with an ultranarrow FWHM of 36 nm, achieving excellent color purity for blue-emitting I-III-VI QDs. Employing a two-step hot-injection method with precise thickness control, this approach enables epitaxial growth of an atomically thin 0.35 nm thick AgGaS 2 (AGS) shell on Ag-In-Zn-Ga-S cores. Using in situ HRTEM on systematically synthesized AIZGS@AGS architectures, we directly captured the controlled epitaxial growth of this shell, revealing a clean core–shell interface. The high-crystallinity AGS shell passivates surface defects, narrowing the PL spectrum from 103 to 36 nm. Moreover, systematic In:Zn ratio tuning further affords AIZGS@AGS QDs that exhibit narrow linewidths and continuous spectral coverage across the blue region (465–509 nm). Our study provides an effective approach for high-quality I-III-VI blue QDs, demonstrating significant potential for advanced display applications.
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DOI
高影响因子
Nanoscale
·
2024
·Vol. 16
·期 9
·4591-4599
·
IF 5.8
Ouyang Lin,Lijin Wang,Xiulin Xie,Shuaibing Wang,Yibo Feng,Jiawen Xiao,Yu Zhang,Aiwei Tang
Silver-based I–III–VI-type semiconductor nanocrystals have received extensive attention due to their narrow-band luminescence properties. Herein, we demonstrated a seed-mediated growth of quaternary Ag–In–Ga–S (AIGS) nanocrystals (NCs) with narrow-band luminescence. By conducting partial cation exchange with In3+ and Ga3+ based on Ag2S NCs and controlling the Ag/In feeding ratios (0.25 to 2) of Ag–In–S seeds as well as the inventory of 1-dodecanethiol, we achieved optimized luminescence performance in the synthesized AIGS NCs, characterized by a narrow full width at half maximum of less than 40 nm. Meanwhile, narrow-band luminescent AIGS NCs exhibit a tetragonal AgGaS2 crystal structure and a gradient alloy structure, rather than a core–shell structure. Most importantly, the kinetics decay curves of time-resolved photoluminescence and the ground state bleaching in transient absorption generally agree with each other regarding the lifetime of the second decay component, which indicates that the narrow-band luminescence is due to the slow radiative recombination between trapped electrons and trapped holes located at the edge of the conduction band and the deep silver-related trap states (e.g., silver vacancy), respectively. This study provides new insights into the correlation between the narrow-band luminescence properties and the structural characteristics of AIGS NCs.
研究领域:
材料科学
·
光学
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产品关联
DOI
PubMed
高影响因子
Solar RRL
·
2023
·Vol. 7
·期 17
·2300318
·
IF 7.9
Bowen Liu,Xinan Shi,Wei Shao,Jiaxin Gao,Chenxi Zhao,Fuyan Chen,Dongdong Shen,Bingsuo Zou,Daocheng Pan
Cu(In,Ga)(S,Se) 2 (CIGSSe) solar cells are one of the most promising thin film photovoltaics with a record efficiency of 23.6%. However, the biggest drawback to CIGSSe solar cells is their high material cost, partially resulting from relatively rare and expensive indium and gallium. Therefore, improving the utilization of indium and gallium and reducing their wastage can greatly lower the cost of CIGSSe thin film solar cells. Inkjet printing is a facile, cost-effective, and low-waste deposition technology, which is particularly suitable for low-cost and large-area fabrication of CIGSSe solar cells. Herein, a novel and green ionic liquid-assisted ink to fabricate highly efficient CIGSSe solar cells is developed. The material utilization of inkjet printing can be remarkably improved compared to the conventional vacuum-based deposition approach and spin-coating solution approach. The CIGS printable ink is prepared by dissolving copper acetate, indium acetate, gallium nitrate, and thiourea into ethanol with the assistance of n -butylammonium butyrate ionic liquid. Ionic liquid-assisted CIGS ink has a nearly zero wetting angle and a tunable viscosity, which enable to deposit a flat and continuous CIGS thin film by an inkjet printing method. An encouraging power conversion efficiency of 15.22% has been achieved for inkjet-printed CIGSSe solar cells.
研究领域:
材料科学
·
可再生能源
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Photonics
·
2026
·
IF 6
Yujia Luo,Yikun He,Yuyao Feng,Wanzhong Gu,Wanling Mao,Yixuan He,Liang Ke,Yuhui Dong,Yousheng Zou
Eco-friendly Ag–In–Ga–S (AIGS) quantum dots (QDs) are potential alternatives in white light-emitting diodes (WLEDs) due to their high photoluminescence quantum yield (PLQY) and tunable emission. The conventional stacked-film structure using multicomponent QDs suppresses reabsorption losses among different color QDs, but inevitably introduces interfacial optical losses and manufacturing complexity and cost. In this study, a single color-conversion blended film with uniform and excellent luminescence is fabricated using high-PLQY red-emitting (85%) and green-emitting (91%) AIGS QDs simultaneously incorporated into a PMMA matrix. This deliberately utilizes reabsorption governed by the relative ratio between red and green QDs rather than solely suppressing it, thereby eliminating interfacial losses and enhancing luminance, which results in higher photoluminescence emission while maintaining a nearly identical low blue-light transmittance. Furthermore, the blended-film WLED fabricated by integrating the blended film with a blue LED chip exhibited a higher luminance (532.3 cd/m2), representing a greater than 25-fold increase over the conventional stacked-film device (21.0 cd/m2). The blended-film WLED achieved CIE chromaticity coordinates of (0.31, 0.32) and a color rendering index (CRI) of 87.3. The study provides a better understanding of reabsorption in single-layer multicolor QD films and promotes the development of simple and efficient I–III–VI QD backlight films for white-light display applications.
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DOI
高影响因子
危险品化学品经营许可证（带存储）