JOURNAL OF SOLID STATE CHEMISTRY
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2013
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IF 2.04
Yong Xiang,Xiaokun Zhang,Shu Zhang
Sb-doping has been demonstrated to be a new approach to promote Cu(In,Ga)Se 2 (CIGS) thin film formation . To study the mechanism of Sb-promoted CIGS formation, we investigated the influence of Sb on the evolution of the critical intermediate Cu–Se phases, and found that Cu 3 SbSe 3 species was formed. Phase change of the as-prepared Cu–Se compounds at elevated temperature was determined using the differential scanning calorimetry analysis. For samples containing Sb, the melting decomposition occurred at 507.1 °C, along with aggregation of nanocrystals into a bulk, while the morphology of the sample without Sb barely changed after heating. This result suggests that the mobile Cu 3 SbSe 3 is likely the key intermediate responsible for Sb-promoted CIGS formation. Furthermore, we extended the scope of Sb-doping approach to solvothermal synthesis and CIGS nanocrystals were synthesized with significantly promoted kinetics in the presence of Sb. Based on these results, we propose the mechanism of Sb promoted CIGS formation.
研究领域:
材料科学
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太阳能电池
·
化学工程
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DOI
高影响因子
Coatings
·
2024
·Vol. 14
·期 2
·164
·
IF 2.9
Wanlei Dai,Zhaoyi Jiang,Yali Sun,Juhua Wang,Zeran Gao,Haoyu Xu,Xinzhan Wang,Chao Gao,Qiang Ma,Yinglong Wang,Wei Yu
In this study, a feasible strategy is proposed for directly depositing high-quality Cu(In,Ga)Se2(CIGS) films using Na-doped targets in a selenium-free atmosphere to boost the power conversion efficiency (PCE) of CIGS solar cells. Introducing a small amount of sodium dopant effectively promoted the textured growth of CIGS crystals in the prepared films, resulting in larger grain sizes and a smoother interface. The higher MoSe2content at the CIGS/Mo interface increased the carrier lifetime in the films. In addition, sodium doping increased the proportion of Se atoms on the film surface and reduced the concentration of defects caused by the direct sputtering of the films in the selenium-free atmosphere. Therefore, the separation and transportation of photo-generated carriers in the devices were effectively enhanced. Using the optimized parameters, a record-high PCE of 17.26% was achieved for the 7.5% Na-doped devices, which represents an improvement of nearly 63%.Keywords:Cu(In,Ga)Se2;sodium-doped targets;magnetron sputtering;solar cells
研究领域:
材料科学
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能源技术
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DOI
高影响因子
ACS Applied Materials & Interfaces
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2017
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IF 7.504
Jinlian Bi,Jianping Ao,Qing Gao,Zhaojing Zhang,Guozhong Sun,Qing He,Zhiqiang Zhou,Yun Sun,Yi Zhang
Electrodepositon of Ga film is very challenging due to the high standard reduction potential (−0.53 V vs SHE for Ga3+). In this study, Ga film with compact structure was successfully deposited on the Mo/Cu/In substrate by the pulse current electrodeposition (PCE) method using GaCl3 aqueous solution. A high deposition rate of Ga3+ and H+ can be achieved by applying a large overpotential induced by high pulse current. In the meanwhile, the concentration polarization induced by cation depletion can be minimized by changing the pulse frequency and duty cycle. Uniform and smooth Ga film was fabricated at high deposition rate with pulse current density 125 mA/cm2, pulse frequency 5 Hz, and duty cycle 0.25. Ga film was then selenized together with electrodeposited Cu and In films to make a CIGSe absorber film for solar cells. The solar cell based on the Ga film presents conversion efficiency of 11.04%, fill factor of 63.40%, and Voc of 505 mV, which is much better than those based on the inhomogeneous and rough Ga film prepared by the DCE method, indicating the pulse current electrodeposition process is promising for the fabrication of CIGSe solar cell.
研究领域:
材料科学
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电化学
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光伏技术
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薄膜技术
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DOI
高影响因子
JOURNAL OF POWER SOURCES
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2016
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IF 6.333
Jinlian Bi,Liyong Yao,Jianping Ao,Shoushuai Gao,Guozhong Sun,Qing He,Zhiqiang Zhou,Yun Sun,Yi Zhang
The issues of rough surface morphology and the incorporated additives of the electro-deposited Cu layers, which exists in electrodeposition-based processes, is one of the major obstacles to improve the efficiency of Cu(In,Ga)Se 2 (CIGSe) and Cu 2 ZnSnSe 4 (CZTSe) solar cells. In this study, the pulse current electro-deposition method is employed to deposit smooth Cu film on Mo substrate in CuSO 4 solution without any additives. Grain size of the deposited Cu film is decreased by high cathode polarization successfully. And the concentration polarization , which results from high pulse current density, is controlled successfully by adjusting the pulse frequency. Flat Cu film with smooth surface and compact structure is deposited as pulse current density @ 62.5 mA cm −2 , pulse frequency @100,000 Hz, and duty cycle @ 25%. CIGSe and CZTSe absorber films with flat surface and uniform elemental distribution are prepared by selenizing the stacking metal layers electro-deposited by pulse current method. Finally, the CIGSe and CZTSe solar cells with conversion efficiency of 10.39% and 7.83% respectively are fabricated based on the smooth Cu films, which are better than the solar cells fabricated by the rough Cu film deposited by direct current electro-deposition method.
研究领域:
材料科学
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可再生能源
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电化学
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DOI
高影响因子
Advanced Energy and Sustainability Research
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2022
·Vol. 3
·期 7
·2200006
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IF 0
Shasha Hao,Shaotang Yu,Xinge Liu,Bingyan Li,Shuaiqi Han,Hao Xin,Weibo Yan,Wei Huang
Copper indium gallium selenide Cu(In,Ga)Se 2 (CIGS) solar cells fabricated by vacuum thermal evaporation, magnetron sputtering, or organic solvent solution-process either lead to high manufacturing cost and film nonuniformity or cause explosion, toxication and pollution. To address these issues, herein, water as a solvent to prepare the CIGS precursor solution is used and 7.04% efficient CIGS solar cells without MgF 2 antireflection layer is obtained. Furthermore, for the first time, K doping on CIGS films via adding “K + ” into the aqueous precursor solution is conducted. K–In–Se species is formed in the process of selenization and acts as a Se reservoir during CIGS grain growth, resulting in improved quality of the CIGS film with much larger grains. K doping can also inhibit the loss of Ga element. The high-bandgap K–In–Se phase and higher Ga content combine to result in the increase in the CIGS bandgap. As a result, the K-doped CIGS solar cell achieves a 33.1% enhancement in efficiency to 9.37%, with the significant increase in the open-circuit voltage from 520.5 to 597.1 mV and fill factor from 50.77 to 55.36%. These results provide an important preliminary foundation for the development of aqueous precursor solution-based CIGS solar cells.
研究领域:
光伏技术
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材料科学
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薄膜太阳能电池
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半导体材料
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DOI
Nature Energy
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2026
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IF 60.1
Zhang Shaochen,Bi Enbing,Lei Borui,Tian Liuwen,Miao Xiaohe,Lian Chongyan,Wang Xiaonan,Zhang Xu,Jin Donger,Zhou Jingjing,Tian Yuan,Fan Wei,Chu Shenglong,Liu Qingqing,Gui Yang,Guo Tie,Wang Rui,Yang Deren,Xue Jingjing
Perovskite/Cu(In,Ga)Se 2 (CIGS) tandem solar cells hold particular promise for flexible and lightweight applications, yet their efficiency still lags behind other perovskite-based tandem architectures. To achieve optimal spectral matching with the CIGS bottom cell, the perovskite top cell requires a wide bandgap, obtainable with a mixed-halide composition with high bromide content. However, perovskite films made with high bromide content suffer from inhomogeneous halide distribution, especially for scalable film fabrication method. Here we use 2-pyrrolidinone as the coordinating solvent to suppress the crystallization of the halide intermediates, maintaining a homogeneous halide distribution during ambient blade-coating of the perovskite film. We demonstrate a flexible monolithic two-terminal perovskite/CIGS tandem cell with a power conversion efficiency of 27.3%, with minimal efficiency loss over 500 h of operation.
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高影响因子
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