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Ga掺杂ZnO
PHYSICA B-CONDENSED MATTER · 2022 · IF 2.988

Influence of annealing atmosphere on optical and electrical properties of Ga-doped ZnO powders

Wei Zhang,Xinhui Yang,Zhiwei Qu,Zirui Liu,Youjin Zheng,Xiangmin Zhao,Xue Wang

Ga-doped ZnO (GZO) powders were synthesized by chemical coprecipitation . GZO powders were annealed in O 2 , Ar, N 2 , and H 2 atmosphere, and the effects of annealing atmosphere on their structure, optical and electrical properties were systematically studied. The results show that the optical and electrical properties of GZO powder were highly influenced by annealing atmosphere. GZO annealed in Ar, N 2 , H 2 atmosphere have excellent electrical resistivity, while GZO annealed in O 2 atmosphere has poor electrical resistivity. According to the annealing contrasted of GZO in different atmosphere, the lower resistivity of GZO is, the lower reflectivity will be. The blue shift of ultraviolet emission (385 nm) in photoluminescence of GZO is related to oxygen vacancy (V O ) and doped Ga, the blue and green emissions (around 500 nm) are originated from V O defects. The density of V O defects and the effective doping rate of Ga will be enhanced when GZO annealed in Ar, N 2 , H 2 atmosphere.

CAS / MDL: 64-17-5 13494-90-1
研究领域: 材料科学 · 物理学
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APPLIED SURFACE SCIENCE · 2023 · IF 6.7

UV-light enhanced gas sensor based on Ga doped ZnO for ultra-high sensitive and selective n-butanol detection

Tingzhan Wang,Jingkun Chen,Jiaxuan Chen,Xuan Yao,Gang Chen,Zheng Jiao,Jing-Tai Zhao,Shuai Cheng,Xue-Chun Yang,Qianli Li

N-butanol gas is a common volatile organic compound (VOC) that can pose a threat to human health and pollute the atmospheric environment. However, the n-butanol gas sensors suffer from low response and selectivity. Herein, we synthesized the Ga-doped ZnO (ZOG) sensors by one-step hydrothermal treatment and subsequent calcination. The oxygen vacancies content of 1-ZOG has increased by 46 % compared to pure ZnO. Rich oxygen vacancies can increase the response signal of 1-ZOG to 174.78 in darkness for 100 ppm n-butanol, which is 2.4 times that of ZnO. Furthermore, the gas sensing performance of 1-ZOG is improved by light excitation. Under UV irradiation, the response of 1-ZOG sensor to 100 ppm n-butanol is 3.6 times that of pure ZnO, up to 636.81. Meanwhile, the response signal of 1-ZOG to n-butanol is at least 6.32 times that of other gases under UV light, showing ultra-high selectivity. This study proved that both Ga doped and photo-excited are effective strategies for improving the sensitivity and selectivity of ZnO based gas sensors.

CAS / MDL: 69365-72-6
研究领域: 材料科学 · 环境科学 · 传感器技术
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