Crystals
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2019
·Vol. 9
·期 3
·130
·
IF 2.061
Lu Zhou,Xuefeng Chu,Yaodan Chi,Xiaotian Yang
In this study the effects of 1-Octadecanethiol (ODT, 1-CH3[CH2]17SH) passivation on GaAs (100) surface and GaAs/Al2O3MOS capacitors are investigated. The results measured by X-ray photoelectric spectroscopy (XPS), Raman spectroscopy and scan electron microscopy (SEM) show that the ODT passivation can obviously suppress the formation of As-O bonds and Ga-O bonds on the GaAs surface and produce good surface morphology at the same time, and especially provide better protection against environmental degradation for at least 24 h. The passivation time is optimized by photoluminescence (PL), and the maximum enhancement of PL intensity was 116%. Finally, electrical property of a lower leakage current was measured using the metal-oxide-semiconductor capacitor (MOSCAP) method. The results confirm the effectiveness of ODT passivation on GaAs (100) surface.Keywords:GaAs;passivation;XPS;RAMAN;PL
研究领域:
材料科学
·
半导体物理
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高影响因子
Surfaces and Interfaces
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2023
·
IF 6.2
Zixuan Zhao,Can Zou,E Zhou,Qing Liu,Kai Chen,Xingfu Wang,Longfei He,Fangliang Gao,Shuti Li
Interface engineering is an effective way to improve the performance of graphene-based photodetectors . Here, a graphene/GaAs heterojunction photodetector is fabricated, and when inserting an Al 2 O 3 tunneling layer, its performance is improved through direct tunneling (DT) and Fowler-Nordheim tunneling (FNT). According to the experimental results, it is found that the thickness of the tunneling layer has a great influence on the performance of the photodetector. Compared with graphene/GaAs photodetector, the performance of graphene/Al 2 O 3 (2 nm)/GaAs photodetector is significantly improved with the responsivity, detectivity, and external quantum efficiency value of 0.80 A/W, 3.02 × 10 11 Jones and 306% under 1 mW/cm 2 light intensity at 2 V bias. Meanwhile, fast response is also observed (rise/decay time of 3 ms/8.6 ms). The improvement of the photodetector's performance in this work is mainly attributed to the effective modification of the interface state by the Al 2 O 3 tunneling layer and the effect of the two tunneling mechanisms based on DT and FNT.
研究领域:
材料科学
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光电探测器
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界面工程
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Journal of Materials Chemistry C
·
2024
·Vol. 12
·期 37
·15232-15238
·
IF 5.7
Zhi-Hong Zhang,Xiao-Bing Hou,Shang-Heng Li,Zhi-Peng Wei,Jin-Chao Wei,Peng Li,Shuang-Peng Wang
Semiconductor heterostructures hold significant importance for exploring novel functional optoelectronic devices, but the chemical instability and soft lattice framework of perovskites significantly hinder the efficient heterogeneous integration with other perovskite or semiconductor materials. Herein, based on the large-area phase-pure 2D perovskite sheets, a BA2MA2Pb3I10/GaAs van der Waals (vdW) heterostructure has been successfully constructed. The favorable vdW contacts allow the device to be cut-off at forward bias with a remarkably low dark current of 1.94 pA. This endows the heterostructure device with excellent detection performance, achieving a linear dynamic range of 80.9 dB and a detectivity of 6.17 × 1010 Jones. Additionally, the interfacial potential of the heterostructure enables the device to operate in a self-driven manner across broad spectral ranges from ultraviolet to near-infrared. Our study demonstrates efficient vdW integration based on perovskite and provides a new foundation for constructing perovskite vdW heterostructures.
研究领域:
材料科学
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光电子学
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高影响因子
Nano Energy
·
2016
·
IF 11.553
Zhijuan Xu,Shisheng Lin,Xiaoqiang Li,Shengjiao Zhang,Zhiqian Wu,Wenli Xu,Yanghua Lu,Sen Xu
Two dimensional material/semiconductor heterostructures offer alternative platforms for optoelectronic devices other than conventional Schottky and p–n junction devices. Herein, we use MoS 2 /GaAs heterojunction as a self-driven photodetector with wide response band width from ultraviolet to visible light, which exhibits high sensitivity to the incident light of 635 nm with responsivity as 321 mA/W and detectivity as 3.5×10 13 Jones (Jones=cm Hz 1/2 W −1 ), respectively. Employing interface design by inserting h-BN and photo-induced doping by covering Si quantum dots on the device, the responsivity is increased to 419 mA/W for incident light of 635 nm. Distinctly, attributing to the low dark current of the MoS 2 /h-BN/GaAs sandwich structure based on the self-driven operation condition, the detectivity shows extremely high value of 1.9×10 14 Jones for incident light of 635 nm, which is higher than all the reported values of the MoS 2 based photodetectors. Further investigations reveal that the MoS 2 /GaAs based photodetectors have response speed with the typical rise/fall time as 17/31 μs. The photodetectors are stable while sealed with polymethyl methacrylate after storage in air for one month. These results imply that monolayer MoS 2 /GaAs heterojunction may have great potential for practical applications as high performance self-driven photodetectors.
研究领域:
材料科学
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光电
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半导体器件
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高影响因子
APPLIED CATALYSIS B-ENVIRONMENTAL
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2021
·
IF 19.503
Xuqiang Zhang,Gongxuan Lu,Xiaofeng Ning,Chengwei Wang
Photocatalytic visible water splitting is still impeded by slow kinetics of multi-electron-driven water oxidation , fast carrier recombination and insufficient light absorption of the photocatalyst. Herein, the core-shell heterojunction B x Ga 1−x As/GaAs photocatalyst exhibited a remarkably promoted activity for hydrogen generation by direct dissociation of water molecule over boron site on catalyst surface due to redistributing electron density, as well as by promotion of visible absorption and acceleration of charge separation and transfer via a built-in electric field. B 0.25 Ga 0.75 As/GaAs photocatalyst exhibited hydrogen evolution rate of 8.4 μmol during 8 h from pure water without electron donor and applied bias.
研究领域:
材料科学
·
催化化学
·
能源科学
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高影响因子
Scientific Reports
·
2015
·Vol. 5
·期 1
·1-9
·
IF 5.578
Lin Shisheng,Li Xiaoqiang,Wang Peng,Xu Zhijuan,Zhang Shengjiao,Zhong Huikai,Wu Zhiqian,Xu Wenli,Chen Hongsheng
MoS 2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS 2 /bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS 2 /bulk semiconductor heterostructure, static charge transfer shifts the Fermi level of MoS 2 toward that of bulk semiconductor, lowering the barrier height of the formed junction. Herein, we introduce hexagonal boron nitride (h-BN) into MoS 2 /GaAs heterostructure to suppress the static charge transfer and the obtained MoS 2 /h-BN/GaAs solar cell exhibits an improved power conversion efficiency of 5.42%. More importantly, the sandwiched h-BN makes the Fermi level tuning of MoS 2 more effective. By employing chemical doping and electrical gating into the solar cell device, PCE of 9.03% is achieved, which is the highest among all the reported monolayer transition metal dichalcogenide based solar cells.
研究领域:
材料科学
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能源科学
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半导体物理
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DOI
PubMed
高影响因子
OPTICAL MATERIALS
·
2024
·
IF 3.8
Zhi Yang,Shufang Ma,Yu Shi,Xiaodong Hao,Lin Shang,Bin Han,Bocang Qiu,Bingshe Xu
Nanowires (NWs)-based heterojunction photodetectors (PDs) have been widely applied in the fields of remote sensing, night vision, environmental monitoring, and optical communications with high light absorption coefficient and photoelectric conversion efficiency. Here, S-GaAs NWs/Si heterojunction was developed to form a broadband self-powered PDs by growing GaAs NWs on Si substrate through the sulfur-catalyzed assisted chemical vapor deposition (CVD) technology. Compared with the pure GaAs NWs, the sulfur-assisted catalysts could not only inhibit Ostwald ripening of Au seeds to improve the crystalline quality of NWs but also form a thin Ga–S bond passivation layer to reduce surface defects and enhance the optoelectronic performance of the PDs. The fabricated GaAs NWs/Si heterojunction PDs exhibit excellent performances with the large responsivity of 10.3 mA W −1 and high detectivity of 9.59 × 10 12 cm Hz 1/2 W −1 . Additionally, the designed PDs have the broadband wavelength photoresponse from visible to near infrared and fast response speed (rise/fall time of 3.8/21.8 ms). Importantly, the develop strategy of hybrid heterojunction PDs can be extended to other semiconductor materials for facilitating the practical application of high-performance optoelectronic devices .
研究领域:
半导体材料
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纳米电子学
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光电子学
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凝聚态物理
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功能材料
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器件物理
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DOI
高影响因子
ACS Applied Energy Materials
·
2026
·
IF 5.5
Yanling Wang,JunKun Wang,Wentao Qu,Jiehui Liang,Shaohua Xie,Xiangrong Li,Wenliang Wang,Guoqiang Li
GaAs/PEDOT:PSS exhibits excellent optoelectronic properties and a matched energy band structure, showing great potential for PEC water splitting. However, the insulating PSS causes severe conductivity loss and low charge separation efficiency in the composite. Herein, n-propanol, 1,2-propanediol, and glycerol are used to modify PEDOT:PSS, with their –OH groups forming electrostatic interactions with PSS’s –SO3H to weaken the PEDOT-PSS Coulombic force and promote PSS dissociation. XPS, FTIR, and AFM characterizations confirm that glycerol achieves the optimal PSS dissociation by forming a multi-dentate hydrogen bond network, which also optimizes PEDOT’s conjugated system for enhanced light absorption. GaAs/glycerol@PEDOT:PSS delivers a photocurrent density of 17.8 mA/cm2 at 1.23 V vs RHE (78% higher than GaAs/PEDOT:PSS) with an ABPE of 12.65% at 0.36 V vs RHE. Introducing CuSCN as a hole transport layer further reduces the electrode impedance and forms a stepped energy band with GaAs and PEDOT:PSS for directional hole transport. The resultant GaAs/CuSCN/glycerol@PEDOT:PSS exhibits a photocurrent density of 20.8 mA/cm2 at 1.23 V vs RHE, an ABPE of 13.75%, a high H2 evolution rate of 138.6 μmol/h, and a Faradaic efficiency of 97.74%. This work provides an effective interfacial engineering strategy for the rational design of high-performance GaAs-based PEC electrodes for water splitting.
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高影响因子
Science China-Physics Mechanics & Astronomy
·
2022
·Vol. 65
·期 7
·1-7
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IF 5.203
Guo Hang,Tong Yu,Fan Haibo,Ye Qian,Zhang Jin,Wang Hongyue,Cao Fengren,Li Liang,Wang Hongqiang
Solution-processed perovskite wires are attractive candidates for photodetectors (PDs) due to their simple processibility as well as one-dimensional (1D) geometry with desirable charge carrier transport. However, the performance of the perovskite PDs is generally restricted by the charge carrier transport and extraction efficiency. Herein, we demonstrate that the charge transport and the consequent photodetection performance of MAPbI 3 perovskite wires can be effectively enhanced by incorporating nanocrystals (NCs) of GaAs—a semiconductor with high charge carrier mobility. Taking advantage of the pulsed laser irradiation technique, we successfully fabricate ligand-free GaAs NCs with a size of ∽7 nm and homogeneously embed them in MAPbI 3 perovskite wires through a simple solution-processed synthesis route. Compared with the pristine perovskite wires, the GaAs NCs modulated perovskite wires show improved charge carrier transport with the mobility rising from 1.13 to 3.67 cm 2 V −1 s −1 , and the resultant PD shows significant improvement in responsivity and detectivity. This study provides a new strategy for improving optoelectronic properties of halide perovskite materials and optimizing the device performance.
研究领域:
材料科学
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光电子学
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高影响因子
ACS Photonics
·
2025
·
IF 6.7
Lijian Li,Peng Guo,WenJie Li,Yun Wei,QinZhi Zhao,Peng Wan,Caixia Kan,Da Ning Shi,Mingming Jiang
Weyl semiconductor Te holds great promise for next-generation optoelectronics due to its ultrahigh carrier mobility and unique topological surface states. However, its practical application is hindered by challenges such as the lack of scalable wafer-scale manufacturing methods for uniform films and high dark current. This study reports an in situ deposition strategy enabling wafer-scale fabrication of 64-pixel GaAs/Te van der Waals heterojunction (vdWH) arrays, achieving ultrawide-band photoresponse from solar-blind to near-infrared. Especially upon 1050 nm illumination, a GaAs/Te unit device exhibits superior performance, including an impressive responsivity of 55 mA/W, a specific detectivity of 2 × 1012 Jones, and a fast response speed of 2.6/5.1 ms at 0 V bias. Owing to the strong in-plane anisotropy of the Te layer, the detector achieves an anisotropy ratio of 2.57 at 1050 nm. The enhanced performance primarily stems from Te’s topological surface state, which enables robust interlayer coupling with GaAs while effectively suppressing interfacial defects. The GaAs/Te array architecture, enabled by its remarkable spatial uniformity in the pixel arrangement, demonstrates exceptional potential for polarization-encrypted imaging and pixel-level multispectral fusion technologies. Significantly, the implementation of topological vdW contact engineering, coupled with wafer-scale synthesis of Weyl semiconductor Te, establishes a transformative platform for advancing next-generation optoelectronic systems and CMOS-integrated photonic devices.
研究领域:
光电子学
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拓扑材料
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纳米电子学
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异质结构工程
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光电探测器
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高影响因子
LANGMUIR
·
2026
·
IF 4.4
Zhihai Wu,Gongxuan Lu
The highly efficient enrichment of Li+ and Cs+ from their low-concentration aqueous solutions is a crucial step for Lithium and Cesium clean production, as well as radioactive Cs+ safety remediation from water. The current adsorption and precipitation routes are high energy cost and environmental unfriendly. Electrochemical ion exchange route may serve as a promising alternative route. This study presents results of high efficient, multicycle Li+ and Cs+ enrichment from their low concentration solutions via intercalation and deintercalation in WO3/GaAs composite electrode with Faraday efficiency above 99% and high intercalation capacities 7.25 mg/g for Li+ and 38.89 mg/g for Cs+, respectively. After six cycles, 95 and 90% capacities for Li+ and Cs+ still remained. Both enrichment efficiency and stability are higher than those of LiFePO4 (LFP) and LiMn2O4 (LMO) under the same conditions. This route might provide a way for low-energy cost and highly efficient Li+ and Cs+ recovery from contaminated water.
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PubMed
高影响因子
Journal of Energy Storage
·
2025
·
IF 9.8
Haoran Gu,Hongyi Tian,Xinxu Yuan,Jingbin Lu,Haolin Li,Ke Zhang,Hanxiao Yan,Shuaiwen Yi
To address the low power output issue of Betavoltaic Batteries in practical applications, this paper proposes a novel isotope beta radiation energy conversion and storage system integrating a GaAs-based Betavoltaic Batteries with a low self-discharge lithium metal battery utilizing flake graphite. This system enables simultaneous collection, conversion, and storage of beta radiation energy. In experiments, we fabricated a lithium metal battery employing flake graphite as the cathode, lithium metal as the anode, and LiFSI in DME electrolyte supplemented with 4-n-pentyl-4′-cyanobiphenyl(5CB) additive. This battery was then connected to the GaAs-based Betavoltaic Batteries. Experimental results demonstrate successful energy harvesting from the Betavoltaic Batteries alone, which effecttively powered an LCD display.
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