Enhanced photoelectrochemical performance of cobalt phosphate modified GaN-ZnO Nanowires/GaN microrods heterostructure photoanode by vacancy defect modulation
Gallium-zinc oxynitride solid solution has been considered as a promising candidate material for photoelectrochemical (PEC) water splitting. However, its PEC performance is severely limited by the poor charge separation efficiency and the adverse intrinsic vacancy defects . Herein, to solve these problems, we developed a novel strategy for constructing dendritic (GaN) 1-x (ZnO) x /GaN arrays with type-Ⅱ heterojunction on a conductive GaN crystalline substrate by an Au-assisted chemical vapor deposition method. Then, an additional annealing treatment in Ar is carried out to further decrease the density of surface oxygen vacancy and to increase the density of O N -V Ga vacancy complexes for enhancing photoelectrochemical performance. Under the synergistic effect of type-Ⅱ heterojunction and vacancy modulation, the optimized (GaN) 1-x (ZnO) x /GaN photoanode exhibits a photocurrent density of 0.25 mA cm −2 at 1.23 V vs. RHE and the surface modification with CoPi co-catalyst can further increase the photocurrent density to 0.45 mA cm −2 at 1.23 V vs. RHE. It is demonstrated that the O N -V Ga vacancy complexes are beneficial to increase the PEC performance of gallium zinc oxynitrides.
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