Journal of Materiomics
·
2024
·
IF 8.4
Jie Peng,Jie Jiang,Shuoguo Yuan,Pengfei Hou,Jinbin Wang
Ferroelectric materials are ideal for self-powered sensors in Internet of Things (IoT) and high-precision detection systems due to their excellent polarization properties. Compatibility with miniaturization, high-density systems, and complementary metal oxide semiconductor (CMOS) processes is crucial for their widespread adoption. HfO 2 -based ferroelectric films show potential in self-powered pyroelectric sensors as their thinness enables effective temperature and light detection. However, the disordered ferroelectric domain distribution limits their pyroelectric performance and hampers the development of highly integrated self-powered pyroelectric devices. This report investigates the temperature and light detection capabilities of Ce-doped HfO 2 ferroelectric films, which exhibit as-grown spontaneous polarization in the downward direction, making them a promising option for self-powered pyroelectric sensors. The findings provide robust evidence that the introduction of a temperature gradient significantly enhances pyroelectricity. In addition, their applications in the detection of hot/cold wind and breathing have been proved. Notably, the 30 nm thick Ce-doped HfO 2 ferroelectric film has a high pyroelectric coefficient of about 894.7 μC·m −2 ·K −1 and enables high-precision detection of changes in temperature of 0.1 K. This study highlights the potential application of HfO 2 -based ferroelectric films in self-powered sensors with temperature and light detection capabilities, making them a promising candidate for future IoT-based systems and high-precision detection systems.
研究领域:
材料科学
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传感器技术
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物联网
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DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
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2019
·Vol. 30
·期 6
·5771-5779
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IF 2.195
Liu Heng,Zheng Shuaizhi,Chen Qiang,Zeng Binjian,Jiang Jie,Peng Qiangxiang,Liao Min,Zhou Yichun
HfO 2 thin films with different praseodymium doping contents (Pr:HfO 2 ) were fabricated by chemical solution deposition (CSD) method at ambient conditions. The chemical bonding and the composition of Pr doped HfO 2 thin film were characterized by X-ray photoelectron spectroscopy (XPS), while the structural properties were investigated by glancing incidence X-ray diffraction (GIXRD) and high resolution transmission electron microscopy (HRTEM). It is found that the ferroelectric orthorhombic phase was induced in the HfO 2 based thin films by Pr doping. The combined results of P–E (polarization–electrical field) and C–V (capacitance–voltage) measurements demonstrated that the 5 mol% Pr doped HfO 2 film exhibited a distinct ferroelectricity, with a maximum remanent polarization ( P r ) of 6.9 µC/cm 2 and a coercive field ( E c ) of 1.2 MV/cm. Notably, the polarization did not show obvious degradation over 1 × 10 8 switching cycles, suggesting good endurance performance of the Pr doped HfO 2 thin film. These results indicate that Pr dopant could effectively induce ferroelectricity in HfO 2 thin films, thereby becoming a new member of dopants for HfO 2 based ferroelectrics.
研究领域:
材料科学
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电子工程
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DOI
高影响因子
APPLIED SURFACE SCIENCE
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2021
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IF 6.707
Miao Zhang,Yongqiao Zhu,Dawei Li,Peizhong Feng,Cheng Xu
In this study, HfO 2 films were prepared using the sol–gel method with HfCl 4 as a precursor, HNO 3 as a hydrolysis inhibitor and polyethylene glycol as an additive. Investigations were then made into the properties and laser damage characteristics of the films after annealing at different temperatures. The prepared films have high transmittance, low absorption and high laser-induced damage threshold (LIDT). Specifically, the LIDT of the film was as high as 31.6 J/cm 2 after annealing at 353 K, and it gradually dropped to 21.7 J/cm 2 after annealing at 573 K, indicating its strong resistance to high temperature. This study reported a novel method for preparing sol–gel HfO 2 films with high LIDT and pinpointed the potential application of the films under high-temperature conditions.
研究领域:
材料科学
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光学工程
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产品关联
DOI
高影响因子
CARBON
·
2023
·
IF 10.9
Kemin Wang,Xiaofeng Liu,Zijun Zhao,Luyao Li,Jiajun Tong,Qian Shang,Yiwei Liu,Zhiyong Zhang
Field-effect transistor (FET) biosensor has received widespread attention due to their unique high-sensitivity properties. In conventional FET biosensors, the complicated interaction between the sample solution and the semiconductor channel always results in poor stability. Especially for FET-based pH sensors, the interface failure caused by the harsh acid-base working environment makes accurate, continuous, and low hysteresis pH measurement quite challenging. Here, we report a carbon nanotube (CNT)-FET pH sensor with enhanced environmental stability by introducing HfO 2 film into the gate insulator. The proposed devices show desired immunity to environmental interference including various chemical and physical factors. More importantly, we verified the feasibility of this CNT-FET device for continuous pH sensing, which demonstrates a sensitivity of 67.62 mV/pH, a wide pH range of 1.34–12.68, and low hysteresis of 500 pA with pH switching loops of 4.22–10.24. This work not only realizes a high-performance pH sensor but also paves the way for the development of FET biosensors with high environmental stability, which is of great significance for FET biosensors to maintain normal working performance in complex systems.
研究领域:
生物传感技术
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材料科学
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产品关联
DOI
高影响因子
RSC Advances
·
2022
·Vol. 12
·期 24
·15555-15563
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IF 4.036
Rong Tu,Ziming Liu,Chongjie Wang,Pengjian Lu,Bingjian Guo,Qingfang Xu,Bao-Wen Li,Song Zhang
The use of hafnia (HfO2) has facilitated recent advances in high-density microchips. However, the low deposition rate, poor controllability, and lack of systematic research on the growth mechanism limit the fabrication efficiency and further development of HfO2 films. In this study, the high-throughput growth of HfO2 films was realized via laser chemical vapor deposition using a laser spot with a large gradient temperature distribution (100 K mm−1), in order to improve the experimental efficiency and controllability of the entire process. HfO2 films fabricated by a single growth process could be divided into four regions with different morphologies, and discerned for deposition temperatures increasing from 1300 K to 1600 K. The maximum deposition rate reached 362 μm h−1, which was 102 to 104 times higher than that obtained using existing deposition methods. The dielectric constants of high-throughput HfO2 films were in the range of 16–22, which satisfied the demand of replacing the traditional SiO2 layer for a new generation of microchips.
研究领域:
材料科学
·
微电子学
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DOI
PubMed
高影响因子
Photonics
·
2024
·Vol. 11
·期 10
·976
·
IF 2.1
Haojie Liu,Ziwei Hao,Zirun Peng,Miao Zhang,Peizhong Feng,Cheng Xu
Laser damage in films under long-term high-temperature conditions is a significant concern for advancing laser applications. This study focused on HfO2films prepared using the sol–gel method with HfCl4as a precursor. It examined the effects of temperature on various properties of the films, including their optical properties, microstructure, surface morphology, absorption, and laser-induced damage threshold (LIDT). The prepared film demonstrated desirable characteristics at the high temperature of 423 K, such as high transmittance, low absorption, and high LIDT. As the duration of its high-temperature exposure increased, the LIDT of the films gradually decreased. An intriguing finding was that the film’s LIDT exhibited an exponential decay pattern with prolonged heating time. This observation could be attributed to the power-law increase in defects on both the internal and surface areas of the film as the duration of high-temperature exposure lengthened. Moreover, even after a 15-day heating period at 423 K, the film maintained an LIDT of 12.9 J/cm2, indicating its potential applicability in practical high-temperature environments. This study provided a general pattern and a universal formula for understanding the laser damage of sol–gel films at high temperatures over time. Furthermore, it opened possibilities for future developments of laser films suitable for extreme environments.
研究领域:
材料科学
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光学工程
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产品关联
DOI
高影响因子
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
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2024
·
IF 4.2
Xiaoqin Liu,Jianbo Liu,Wei Li,Qingqing Sheng,Yeming He,Yangyang Wang
Sol–gel method is a low-cost material preparation method; however, it is difficult to obtain a stable sol containing easily hydrolyzable metal ions via this method. In this study, a stable hafnium(IV) oxide (HfO 2 ) sol was prepared by adding benzoyl acetone (BzAcH) modifier. Infrared absorption spectroscopy results showed that the BzAcH additive chelated with the Hf 4+ ions in the sol, thus improving the hydrolysis resistance of the HfO 2 sol, which in turn improved its stability. It was also found that the BzAcH-modified HfO 2 gel film exhibited ultraviolet (UV) photosensitivity. After UV exposure, the film did not dissolve easily in organic solvents . Based on these properties, the micro processing of the HfO 2 film was preliminarily explored, and HfO 2 microstructures were successfully obtained. Additionally, the relative permittivity ( ε r ) of HfO 2 exhibited minimum (∼10.9) and maximum (∼20.6) values at heat-treatment (HT) temperatures of 350 and 450 °C, respectively. With the continuous increase in the HT temperature, ε r first decreased and then increased slightly. Moreover, the current–voltage curves showed that the Pt/HfO 2 /LaNiO 3 (LNO) structure exhibited a pronounced bipolar resistive switching (RS) effect, which was attributed to the fact that LNO could be used as an electrode and an oxygen vacancy (OV 2+ ) storage layer for RS materials. Notably, the oxygen ions in HfO 2 with a low degree of crystallinity are more likely to migrate within its body (which makes it easier to form OV 2+ s), therefore, the “Set” voltage of low-crystallinity HfO 2 films is lower than that of high-crystallinity HfO 2 films. The RS mechanism can be explained by the OV 2+ conductive filament model. These results are of great practical significance for the low-cost preparation of HfO 2 and the application of LNO as an oxide electrode.
研究领域:
材料科学
·
电子工程
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产品关联
DOI
高影响因子
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