CRYSTENGCOMM
·
2023
·Vol. 25
·期 44
·6162-6170
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IF 3.1
Shuai Wen,Huan Liu,Lier Deng,Jijie Zhao,Yuxuan Du,Shengyong Wang,Fei Gao,Zhipeng Zhu,Fei Xie,Weiguo Liu
Broadband photodetectors capable of detecting light across a wide spectrum ranging from visible to short wave infrared (SWIR) wavelengths have significant relevance in various fields, including space technology and civil applications. HgTe quantum dots (QDs) have emerged as a promising candidate for the development of low-cost broadband photodetectors. In this study, a photodetector based on a layered structure of indium tin oxide (ITO)/HgTe QD film/gold (Au) was designed and fabricated using a layer-by-layer spin coating method. The fabricated photodetector exhibited a broadband response from 400 nm to 2000 nm, covering the visible and SWIR regions. Its broad spectral range makes it suitable for a wide range of applications. Additionally, the photodetector demonstrated a fast response time of approximately 300 μs, enabling rapid detection and data acquisition. These results highlight the potential of HgTe QDs as a promising material for the development of advanced broadband photodetectors with fast response times. The simplicity of the device structure, combined with the low-cost fabrication technique, makes it an attractive option for commercialization and integration into various optoelectronic systems.
研究领域:
光学工程
·
材料科学
·
电子器件
✓ 已验证
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2025
·
IF 19
Mengxuan Yu,Runze Huang,Xingchen Zhang,Xudong Hu,Xi Ran,Hang Xia,Mohan Yuan,Jianbing Zhang,Liang Gao,Jiang Tang,Xinzheng Lan
HgTe colloidal quantum dots (CQDs) have gained significant interest due to their extremely wide spectral response and excellent solution processability, making them promising candidates for the next-generation infrared photodetectors. However, the limited availability of p -type HgTe CQDs poses a significant challenge to device construction. In this study, a room-temperature process is identified – one based on a cation exchange process – for the preparation of p -type Au-doped HgTe CQDs. The resultant Au-doped HgTe CQDs exhibit tunable p -type doping, enhanced defect passivation, and improved doping homogeneity than conventional Ag-doped HgTe CQDs. By using Au-doped HgTe CQDs as the hole transport layer, high-performance p -on- n photodiodes are demonstrated, where a record external quantum efficiency (EQE) of 58.8% at ≈1.6 µm and a specific detectivity above 10 12 Jones are successfully demonstrated. This work shows the promise of heterovalent doping in CQDs for advancing infrared optoelectronic devices and is poised to pave the way for further exploration of innovative doping strategies in nanomaterials.
研究领域:
材料科学
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光电技术
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纳米技术
✓ 已验证
产品关联
DOI
高影响因子
Advanced Optical Materials
·
2025
·
IF 7.2
Yichen Bu,Yadong Jiang,Zaihua Duan,Wenxin Zeng,Xing Tang,Jingwen Yang,Zhen Yuan,Huiling Tai
Photodetectors, as promising next-generation logic gates, have garnered widespread attention and made remarkable progress in fields such as optical computing, information encryption, and visual systems in recent years. However, the photoresponse band of the currently reported optoelectronic logic gates is very narrow, mainly ultraviolet or visible light. Herein, an oriented crystallization growth strategy to synthesize broadband HgTe quantum dots (QDs) with low Urbach tail energy is proposed and further construct a HgTe QDs bilateral barrier photodetector with a bipolar response. The results show that the HgTe QDs photodetector exhibits a broadband response from 350 to 1800 nm at 0 V bias, and the −3 dB bandwidth reaches 470 kHz. The photocurrent polarity of the HgTe QDs photodetector can be modulated by the wavelength and radiation intensity at an ultra-low bias voltage (2 mV) to achieve a bipolar response. Correspondingly, the HgTe QDs photodetector successfully achieves “AND” and “OR” logic responses. Finally, the potential applications of the HgTe QDs photodetector in multi-valued logic programmability and adaptive selection imaging is verified. This work successfully synthesizes HgTe QDs with low trap states and provides a valuable reference for constructing broadband bipolar optoelectronic logic gates.
研究领域:
材料科学
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光电子学
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
MATERIALS LETTERS
·
2021
·
IF 3.423
Dan Liu,Sen Wen,Yuxiao Guo,Xingtian Yin,Wenxiu Que
Subject to the complexity and high cost of traditional semiconductor materials and manufacturing processes, the features of facile solution process with low cost have made the colloidal quantum dots (CQDs) more competitive, in which HgTe nanocrystals can be tuned as a potential in infrared region and achieve a great photoresponsivity. Herein, we reported the synthesis and characterization of HgTe CQDs materials by a facile solution process, and explored the relationship between the nanocrystal size and the reaction temperature and time, as well as the effect of the ligand exchange on the thickness of the HgTe CQDs film. The as-fabricated photoconductive device showed a high photoresponse even under a weak light, which provides a direction for the next-generation infrared photodetectors.
研究领域:
材料科学
·
纳米科技
·
光电子学
·
半导体物理
·
凝聚态物理
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2025
·
IF 6.3
Zhisheng Li,Chaoqi Hao,Chuantong Cheng,Zhaowei Zhu,Mengjie Zhang,Yuehua Li,Liting Huang,Bao Zhang,Xu Zhang
s HgTe quantum dots (QDs) are promising for infrared optoelectronic applications due to their size-tunable bandgap and solution-processable nature. However, conventional synthesis methods often result in aggregation and instability, limiting their practical use. This study presents a strategy to improve the dispersibility of HgTe QDs by using mercuric iodide (HgI₂) as the mercury precursor and 3-mercaptopropionic acid (MPA) in combination with oleic acid as the ligands during the quenching stage. Comparative experiments showed that MPA-treated QDs exhibited improved dispersion, with a reduced hydrodynamic diameter (~135 nm) compared to those without MPA (~180 nm). Additionally, photoconductive devices fabricated with MPA-treated QDs demonstrated significantly better performance. These devices exhibited higher switching ratios and responsivity, reflecting the improved dispersion and surface stabilization of the QDs, which enhanced charge transport efficiency and reduced recombination losses. This work provides an effective approach for controlling dispersion and enhancing the performance of HgTe QDs for infrared optoelectronics.
研究领域:
材料科学
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纳米科技
·
半导体物理
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光电功能材料
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胶体化学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Physical Chemistry C
·
2022
·
IF 4.177
Kseniia A. Sergeeva,Kezhou Fan,Aleksandr A. Sergeev,Sile Hu,Haochen Liu,Christopher C. Chan,Stephen V. Kershaw,Kam Sing Wong,Andrey L. Rogach
We investigate the charge carrier dynamics in HgTe quantum dots emitting in the second near-infrared window (1000–2500 nm). To provide a link between fundamental physics and practical application, we made consistent studies of the charge carrier dynamics evolution for quantum dots in different states: colloidal solutions of quantum dots capped with a long-chain ligand; thin films made from them; and finally, exchanged to short-chain ligand films suitable for field effect transistor based devices. Ultrafast transient absorption spectroscopy reveals an ultralow Auger-related nonradiative relaxation threshold at 0.1 exciton per quantum dot, both in colloidal solutions and solid films, with a rate of 30 ns–1. The exchange from long- to short-chain ligands causing closer packing of the HgTe quantum dots leads to a strong increase of the Auger recombination rate of up to 100 ns–1. The competition between the Auger process and excitonic recombination significantly affects the performance of HgTe-based thin film photodetectors operating at room temperature, resulting in a 2 orders of magnitude drop in responsivity when the excitation flux was increased from 0.01 to 5 W·cm–2.
研究领域:
材料科学
·
光子学
·
纳米技术
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）