CRYSTENGCOMM
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2023
·Vol. 25
·期 44
·6162-6170
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IF 3.1
Shuai Wen,Huan Liu,Lier Deng,Jijie Zhao,Yuxuan Du,Shengyong Wang,Fei Gao,Zhipeng Zhu,Fei Xie,Weiguo Liu
Broadband photodetectors capable of detecting light across a wide spectrum ranging from visible to short wave infrared (SWIR) wavelengths have significant relevance in various fields, including space technology and civil applications. HgTe quantum dots (QDs) have emerged as a promising candidate for the development of low-cost broadband photodetectors. In this study, a photodetector based on a layered structure of indium tin oxide (ITO)/HgTe QD film/gold (Au) was designed and fabricated using a layer-by-layer spin coating method. The fabricated photodetector exhibited a broadband response from 400 nm to 2000 nm, covering the visible and SWIR regions. Its broad spectral range makes it suitable for a wide range of applications. Additionally, the photodetector demonstrated a fast response time of approximately 300 μs, enabling rapid detection and data acquisition. These results highlight the potential of HgTe QDs as a promising material for the development of advanced broadband photodetectors with fast response times. The simplicity of the device structure, combined with the low-cost fabrication technique, makes it an attractive option for commercialization and integration into various optoelectronic systems.
研究领域:
光学工程
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材料科学
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电子器件
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DOI
高影响因子
MATERIALS LETTERS
·
2021
·
IF 3.423
Dan Liu,Sen Wen,Yuxiao Guo,Xingtian Yin,Wenxiu Que
Subject to the complexity and high cost of traditional semiconductor materials and manufacturing processes, the features of facile solution process with low cost have made the colloidal quantum dots (CQDs) more competitive, in which HgTe nanocrystals can be tuned as a potential in infrared region and achieve a great photoresponsivity. Herein, we reported the synthesis and characterization of HgTe CQDs materials by a facile solution process, and explored the relationship between the nanocrystal size and the reaction temperature and time, as well as the effect of the ligand exchange on the thickness of the HgTe CQDs film. The as-fabricated photoconductive device showed a high photoresponse even under a weak light, which provides a direction for the next-generation infrared photodetectors.
研究领域:
材料科学
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纳米科技
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光电子学
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半导体物理
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凝聚态物理
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DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2025
·
IF 19
Mengxuan Yu,Runze Huang,Xingchen Zhang,Xudong Hu,Xi Ran,Hang Xia,Mohan Yuan,Jianbing Zhang,Liang Gao,Jiang Tang,Xinzheng Lan
HgTe colloidal quantum dots (CQDs) have gained significant interest due to their extremely wide spectral response and excellent solution processability, making them promising candidates for the next-generation infrared photodetectors. However, the limited availability of p -type HgTe CQDs poses a significant challenge to device construction. In this study, a room-temperature process is identified – one based on a cation exchange process – for the preparation of p -type Au-doped HgTe CQDs. The resultant Au-doped HgTe CQDs exhibit tunable p -type doping, enhanced defect passivation, and improved doping homogeneity than conventional Ag-doped HgTe CQDs. By using Au-doped HgTe CQDs as the hole transport layer, high-performance p -on- n photodiodes are demonstrated, where a record external quantum efficiency (EQE) of 58.8% at ≈1.6 µm and a specific detectivity above 10 12 Jones are successfully demonstrated. This work shows the promise of heterovalent doping in CQDs for advancing infrared optoelectronic devices and is poised to pave the way for further exploration of innovative doping strategies in nanomaterials.
研究领域:
材料科学
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光电技术
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纳米技术
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产品关联
DOI
高影响因子
ACS Nano
·
2025
·
IF 16
Huicheng Hu,Jing Liu,Jing Liu,Mohan Yuan,Haifei Ma,Binbin Wang,Ya Wang,Hang Xia,Junrui Yang,Liang Gao,Jianbing Zhang,Jiang Tang,Xinzheng Lan
Photodetectors based on HgTe colloidal quantum dots (CQDs) are expected to enable the next generation of infrared detection technology due to their low-cost preparation, widely tunable absorption, and direct integration with Si-based electronics. However, the fabrication of HgTe CQD photodiode focal plane arrays (FPAs) has been hampered by the creation of rectifying homojunctions through delicate doping modulation and the time-consuming layer-by-layer assembly of the QD photoactive layer. Herein we address these challenges by exploring energetically favored ZnO/HgTe/ZnTe double heterojunctions (DH), and by forming colloidally stable HgTe ink that enables one-step direct film deposition. The DH HgTe CQD photodiode operates over a broad spectral range from 400 to 1800 nm, comparable to that of uncooled InGaAs detectors, with a record peak EQE of 56% at 1600 nm. A short-wave infrared (SWIR) imager has been finally demonstrated through monolithic integration with a CMOS readout integrated circuit (ROIC) comprising 640 × 512 pixels. The DH architecture is beneficial for the construction of high-performance HgTe CQD photodiodes compatible with silicon chip integration.
研究领域:
材料科学
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光电探测技术
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产品关联
DOI
PubMed
高影响因子
CHEMISTRY OF MATERIALS
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2020
·
IF 9.567
Stephen V. Kershaw,Wai Kin Yiu,Aleksandr Sergeev,Andrey L. Rogach
Most successful syntheses of long-wavelength infrared (IR)-absorbing/emitting Hg-chalcogenide quantum dots (QDs) use either aqueous- or organic-solvent-based methods. Accounts of IR QD growth in aprotic solvents such as dimethyl sulfoxide (DMSO) or dimethylformamide (DMF) are much less common, and yet, producing QDs in such solvents can be useful from the perspective of further reactions to conjugate or incorporate the QDs with other materials since such solvents can be a useful meeting ground for both organic and ionic solutes. Here, we start by demonstrating long-wavelength infrared emission (across the wide spectral range of up to 4500 nm) in HgTe QDs grown in DMF under basic conditions. While many existing synthetic approaches use soluble chalcogen precursors in adduct, salt, or organo-chalcogenide forms, we have opted to take the approach of using slow addition of gaseous H2Te generated under programmed control, which allowed us to investigate the growth kinetics to manipulate the different competing processes and to obtain larger HgTe QDs with the best size distributions on a repeatable and controlled basis. We demonstrate how the nucleation process of HgTe QDs can be carried out analogously to the way that it occurs in classic hot injection syntheses but in our case at a far lower (subambient) temperature, owing to the use of a much more labile Te precursor. We also demonstrate the use of a two-stage, seeded QD growth process, which allows the synthesis conditions for the initial nucleation step and the subsequent enlargement stage to be decoupled; in other words, the QD concentration during the enlargement phase need not be forced to be excessively large by the choice of nucleation conditions. This approach should eventually be extendable to making >5000 nm emitting HgTe QD-based materials, and the use of aprotic solvents will offer compatibility with other nanomaterial chemistries, e.g., oxide glass formers, etc., for the synthesis of composites. By comparing the emission spectra of HgTe QDs grown in DMF with the spectra of those grown in DMSO, we show that polaron-mediated coupling to ligands and solvents, previously seen when using DMSO, can be substantially suppressed using our new synthetic method.
研究领域:
材料科学
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化学
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产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2024
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IF 8.3
Kai Xia,Xu Dong Gao,Guang Tao Fei,Shao Hui Xu,Yi Fei Liang,Xiao Xuan Qu
HgTe colloidal quantum dots (CQDs) are one of few materials that can realize near-to-midwave infrared photodetection. And the quality of HgTe CQD directly affects the performance of photodetection. In this work, we optimize the method of synthesizing HgTe CQDs to reduce the defect concentration, therefore improving the photoelectric properties. The photodetector based on HeTe CQD can respond to the light from the visible to mid-infrared band. Notably, a photoresponse to 4000 nm light at room temperature is realized. The responsivity and detectivity are 90.6 mA W–1 and 6.9 × 107 Jones under 1550 nm light illumination, which are better than these of most reported HgTe CQD photodetectors. The response speed reaches a magnitude of microseconds with a rising time of τr = 1.9 μs and a falling time of τf = 1.5 μs at 10 kHz under 1550 nm light illumination.
研究领域:
材料科学
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光学工程
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产品关联
DOI
PubMed
高影响因子
ACS Photonics
·
2024
·
IF 6.5
Mengxuan Yu,Binbin Wang,Runze Huang,Hang Xia,Jing Liu,Chengjie Deng,Jianbing Zhang,Liang Gao,Jiang Tang,Xinzheng Lan
Colloidal quantum dot (CQD) photodetectors hold promise for a new generation of infrared imaging with low cost and large array integration. In spite of great progress, it remains crucial to further improve the detector performance. In this study, we report HgTe CQD photodetectors with improved performance by leveraging an interfacial engineering approach. This is achieved by introducing self-assembled monolayers (SAMs) between the bottom electrode and the hole-transport CQD layer. Our analysis elucidates the multiple roles of SAMs in band alignment, interface passivation, and improved film quality in CQD devices. The HgTe CQD photodiodes achieve a suppressed dark current density of 4.59 × 10–7 A/cm2 at −0.4 V, coupled with an external quantum efficiency (EQE) of 54.59% and a record-specific detectivity of 2.1 × 1012 Jones at a wavelength ∼1700 nm. By integration with Si-based readout integrated circuits, a HgTe CQD short-wave infrared imager with 640 × 512 pixels was fabricated, and infrared imaging was finally demonstrated. This study highlights the importance of interface engineering in achieving high-performance CQD optoelectronic devices.
研究领域:
材料科学
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光电子学
✓ 已验证
产品关联
DOI
高影响因子
Small Methods
·
2024
·Vol. 8
·期 10
·2301557
·
IF 10.7
Binbin Wang,Huicheng Hu,Mohan Yuan,Ji Yang,Jing Liu,Liang Gao,Jianbing Zhang,Jiang Tang,Xinzheng Lan
HgTe nanocrystals (NCs) possess advantages including tunable infrared absorption spectra, solution processability, and low fabrication costs, offering new avenues for the advancement of next-generation infrared detectors. In spite of great synthetic advances, it remains essential to achieve customized synthesis of HgTe NCs in terms of industrial applications. Herein, by taking advantage of a high critical nucleation concentration of HgTe NCs, a continuous-dropwise (CD) synthetic approach that features the addition of the anion precursors in a feasible drop-by-drop fashion is demonstrated. The slow reaction dynamics enable size-customized synthesis of HgTe NCs with sharp band tails and wide absorption range fully covering the short- and mid-infrared regions. More importantly, the intrinsic advantages of CD process ensure high-uniformity and scale-up synthesis from batch to batch without compromising the excitonic features. The resultant HgTe nanocrystal photodetectors show a high room-temperature detectivity of 8.1 × 10 11 Jones at 1.7 µm cutoff absorption edge. This CD approach verifies a robust method for controlled synthesis of HgTe NCs and might have important implications for scale-up synthesis of other nanocrystal materials.
研究领域:
材料科学
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纳米技术
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光电探测器
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DOI
高影响因子
ADVANCED MATERIALS
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2024
·Vol. 36
·期 27
·2311830
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IF 27.4
Mengxuan Yu,Ji Yang,Xingchen Zhang,Mohan Yuan,Jianbing Zhang,Liang Gao,Jiang Tang,Xinzheng Lan
Colloidal Quantum Dots (CQDs) of mercury telluride (HgTe) hold particular appeal for infrared photodetection due to their widely tunable infrared absorption and good compatibility with silicon electronics. While advances in surface chemistry have led to improved CQD solids, the chemical stability of HgTe material is not fully emphasized. In this study, it is aimed to address this issue and identifies a Se-stabilization strategy based on the surface coating of Se on HgTe CQDs via engineering in the precursor reactivity. The presence of Se-coating enables HgTe CQDs with improved colloidal stability, passivation, and enhanced degree of freedom in doping tuning. This enables the construction of optimized p-i-n HgTe CQD infrared photodetectors with an ultra-low dark current 3.26 × 10 −6 A cm⁻ 2 at −0.4 V and room-temperature specific detectivity of 5.17 × 10 11 Jones at wavelength ≈2 um, approximately one order of magnitude improvement compared to that of the control device. The stabilizing effect of Se is well preserved in the thin film state, contributing to much improved device stability. The in-synthesis Se-stabilization strategy highlights the importance of the chemical stability of materials for the construction of semiconductor-grade CQD solids and may have important implications for other high-performance CQD optoelectronic devices.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
高影响因子
Nature Photonics
·
2024
·
IF 32.3
Mu Ge,Tan Yimei,Bi Cheng,Liu Yanfei,Hao Qun,Tang Xin
Photodetection over a broad spectral range is necessary for multispectral sensing and imaging. Despite the fact that broadband single-element detectors with high performance have been demonstrated with various low-dimensional materials, broadband focal plane array imagers have been rarely reported. Here we propose a stacked lead sulfide/mercury telluride colloidal quantum dot photodetector configuration with optimized graded energy gaps. This architecture allows for ultrabroadband spectral response from 0.4 to 5.0 µm, with responsivity values of 0.23, 0.31, 0.83 and 0.71 A W −1 at 0.4, 0.7, 2.2 and 4.2 µm, respectively. We also fabricate a focal plane array imager with a resolution of 640 × 512, a low photoresponse non-uniformity down to 6% and a noise equivalent temperature difference as low as 34 mK. We demonstrate broadband imaging by simultaneously capturing both short-wave infrared and mid-wave infrared information, as well as multispectral imaging in the red, green, blue, short-wave infrared and mid-wave infrared channels, using a set of optical filters.
研究领域:
光电技术
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材料科学
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成像技术
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产品关联
DOI
高影响因子
Advanced Optical Materials
·
2025
·
IF 7.2
Yichen Bu,Yadong Jiang,Zaihua Duan,Wenxin Zeng,Xing Tang,Jingwen Yang,Zhen Yuan,Huiling Tai
Photodetectors, as promising next-generation logic gates, have garnered widespread attention and made remarkable progress in fields such as optical computing, information encryption, and visual systems in recent years. However, the photoresponse band of the currently reported optoelectronic logic gates is very narrow, mainly ultraviolet or visible light. Herein, an oriented crystallization growth strategy to synthesize broadband HgTe quantum dots (QDs) with low Urbach tail energy is proposed and further construct a HgTe QDs bilateral barrier photodetector with a bipolar response. The results show that the HgTe QDs photodetector exhibits a broadband response from 350 to 1800 nm at 0 V bias, and the −3 dB bandwidth reaches 470 kHz. The photocurrent polarity of the HgTe QDs photodetector can be modulated by the wavelength and radiation intensity at an ultra-low bias voltage (2 mV) to achieve a bipolar response. Correspondingly, the HgTe QDs photodetector successfully achieves “AND” and “OR” logic responses. Finally, the potential applications of the HgTe QDs photodetector in multi-valued logic programmability and adaptive selection imaging is verified. This work successfully synthesizes HgTe QDs with low trap states and provides a valuable reference for constructing broadband bipolar optoelectronic logic gates.
研究领域:
材料科学
·
光电子学
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2025
·
IF 6.3
Zhisheng Li,Chaoqi Hao,Chuantong Cheng,Zhaowei Zhu,Mengjie Zhang,Yuehua Li,Liting Huang,Bao Zhang,Xu Zhang
s HgTe quantum dots (QDs) are promising for infrared optoelectronic applications due to their size-tunable bandgap and solution-processable nature. However, conventional synthesis methods often result in aggregation and instability, limiting their practical use. This study presents a strategy to improve the dispersibility of HgTe QDs by using mercuric iodide (HgI₂) as the mercury precursor and 3-mercaptopropionic acid (MPA) in combination with oleic acid as the ligands during the quenching stage. Comparative experiments showed that MPA-treated QDs exhibited improved dispersion, with a reduced hydrodynamic diameter (~135 nm) compared to those without MPA (~180 nm). Additionally, photoconductive devices fabricated with MPA-treated QDs demonstrated significantly better performance. These devices exhibited higher switching ratios and responsivity, reflecting the improved dispersion and surface stabilization of the QDs, which enhanced charge transport efficiency and reduced recombination losses. This work provides an effective approach for controlling dispersion and enhancing the performance of HgTe QDs for infrared optoelectronics.
研究领域:
材料科学
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纳米科技
·
半导体物理
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光电功能材料
·
胶体化学
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）