We studied the dielectric properties of organosilicon-containing helical cyclopolymer PbMA which consists of PMMA main chains and tetramethyldisiloxane side rings. PbMA formed films with excellent uniformity through spin-coating onto highly n-doped silicon (n-Si) wafers for constructing devices of dielectric measurements, on which the dielectric properties and I-V characteristics of PbMA were studied. PbMA has a much lower dielectric constant (lower than 2.6) in the frequency range of 10–10 5 Hz, and better thermal stability than PMMA does. I-V data showed that the metal/PbMA/n-Si devices have different conducting directions, depending on whether Au or Al deposited over PbMA layers.
Yinyi Huang,Shina Li,Chaorong Wu,Shuo Wang,Chengyan Wang,Ruixin Ma
The electron transport layer (ETL) between the perovskite material and cathode plays an important role in planar perovskite solar cells. In this study, an alkali metal salt solution was be used to modify the surface of the SnO2 electron transport layer to optimize electron transport. The I–V characteristic measurements and UV-Vis spectroscopy were used to investigate whether introducing the interface modification can increase the electron coupling and effectively extract the energy lever of electrons. The results indicated that the interfacial modification could reduce the trap density of states and increase the mobility of the SnO2 thin films. The efficient defect passivation significantly suppressed the recombination at the SnO2/perovskite interface. This method aims at passivation using simple and low-cost inorganic material poles.