IEEE TRANSACTIONS ON ELECTRON DEVICES
·
2024
·Vol. 71
·期 8
·4745-4750
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IF 2.9
Sheng-Hui Luo,Can Fu,Cui-Yun Zhang,Zhi-Yuan Li,Zhi-Guo Zhu,Jiang Wang,Yan Wang,Gang He,Lin-Bao Luo,Feng-Xia Liang
Traditional computing systems necessitate frequent data transfers and communication between physically separated chips for acquisition, storage, and computation. This challenge is further intensified during the complex training of recurrent neural networks (RNNs) for edge device applications. Neuromorphic computing systems based on artificial synapses (AS) demonstrate considerable potential in the field of brain-inspired information processing. In this work, we report an intelligent visual perception system utilizing IGZO/InHfOx nanowires (NWs)/IGZO-based neuromorphic phototransistors. We further exploited the device’s ability to process temporal visual information by leveraging its synaptic plasticity. By incorporating dynamic reservoir computing (RC) and a dedicated readout function, we achieved high-accuracy recognition of various standard digit categories. This work demonstrates a multiclassification hardware circuit built upon the intrinsic nonlinear sustained light response of the neuromorphic photodetector. The ZYNQ7020 development board, integrating the software programmability of a processor with the hardware programmability of a field-programmable gate array (FPGA), provides a more efficient and flexible hardware platform for neuromorphic computation based on these synaptic devices.
研究领域:
微电子学
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神经形态工程
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光电子学
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智能传感
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类脑计算
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DOI
高影响因子
ACS Applied Electronic Materials
·
2019
·
IF 0
Cong Peng,Wenya Jiang,Yi Li,Xifeng Li,Jianhua Zhang
Here, a three-terminal optoelectronic synapse is simply fabricated based on chitosan (CS)/indium gallium zinc oxide (IGZO) with a combination of electrical and optical simulations, which successfully emulates the key features of biological synapses of learning and memory behavior, in particular the reproduction of the typical Hebbian spike-time dependence plasticity (STDP) rule and 2794.6% of the maximum paired-pulse facilitation (PPF) under electrical stimulation. Creating an analogy to device characteristics, more importantly, memory behavior was studied with changes of the human internal state (comfortable and uncomfortable) and the external environment stimuli (quiet and noise); this showed the best results, longest forgetting time and good memory effect, under a comfortable internal state and a quiet environment. Our results suggest that solution-gated IGZO-based electric-double-layer transparent phototransistor transistors could act as platforms for synaptic and human behavior simulation.
研究领域:
神经科学
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材料科学
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仿生学
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DOI
Advanced Materials Technologies
·
2022
·Vol. 8
·期 1
·2200679
·
IF 8.856
Tong Chen,Chunyun Wang,Guoshen Yang,Qiang Lou,Qingping Lin,Shengdong Zhang,Hang Zhou
Monolithic integration of perovskite materials and their optoelectronic devices with well-developed thin-film transistor (TFT) backplane is leading to new applications in displays and image sensors. Herein, a scalable polyimide assisted patterning approach for monolithic integration of perovskite based high-sensitive phototransistor array on indium gallium zinc oxide (IGZO) active matrix backplane is introduced. Polyimide vias are first formed by conventional photolithography process, through which uniform perovskite films of arbitrary patterns with feature size less than 20 µm are fabricated by spin-on-patterning method. Using this technique, patterns of quasi 2D perovskite photoabsorbing layer are precisely deposited onto the channel area of the photosensing IGZO TFT, forming high-performance phototransistors with responsivity and detectivity reaching 835.7 A W −1 and 5.4 × 10 12 Jones, respectively. An image sensor with 8 × 8 pixels array containing both photosensing perovskite/IGZO transistors and switching IGZO transistors is demonstrated, in which the switching IGZO transistor elements on the backplane are protected by the non-patterned region of the polyimide encapsulation layer. This whole fabrication process is compatible with TFT manufacturing process and will significantly reduce the cost needed for constructing next generation high-resolution image sensors.
研究领域:
材料科学
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电子工程
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光电子学
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DOI
高影响因子
ACS Applied Nano Materials
·
2024
·
IF 5.3
Haixia Xie,Cong Zhang,Jie Xu,Yong Pan,Xingtian Yin
PbS quantum dots have demonstrated potential as cost-effective materials for near-infrared photodetectors. Nevertheless, the performance of single-layer PbS quantum dot photodetectors remains unsatisfactory due to the low carrier mobility and high defect state concentration of colloidal quantum dot thin films. In this article, PbS quantum dot films are employed as the sensitizing layers for a-IGZO-based field-effect transistors (FET), which are able to achieve a low dark current and relatively high photocurrent simultaneously when working in the Poole–Frenkel emission region. The as prepared device shows a high responsivity of 25.89 A/W and detectivity of 2.46 × 1012 Jones, but very slow response speed with a decay time of 554 ms, which should be attributed to the high trap density in the PbS quantum dots film. Thus, we proposed a rapid annealing oxidation process to passivate the defects. As a result, after annealing in air at 100 °C for 10 min, the response speed of the device is significantly improved, and the decay time is as short as 2.5 ms, only at the expense of some responsivity and selectivity loss. However, further increasing the annealing temperature leads to excessive photocurrent loss and even affects the response speed improvement.
研究领域:
材料科学
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电子工程
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光电器件
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DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2023
·Vol. 34
·期 6
·2310264
·
IF 19
Bo He,Gang He,Li Zhu,Jingbiao Cui,Elvira Fortunato,Rodrigo Martins
Metal oxide field-effect transistors (MOFETs) represent a promising technology for applications in existing but alsoemerging large-area electronics. Simultaneously, the rise of 1D nanomaterials with unique properties, represented by nanofibers (NFs), has also energized research. Thus, developing 1D nanofiber networks (NFNs) to act as the potential building blocks for use in fundamental elements of transistors is considered to be a promising approach torealize high-performance 1D electronics. However, high processing temperatures and disordered nanofiber distribution represent two remaining technical challenges. Here, electrospun highly aligned IGZO (a-IGZO) nanofiber arrays with low-thermal-budget of 350 °C and impressive device characteristics are achieved, including a μFE of 5.63 cm2 V –1 s –1 and superior on/off current ratio of ≈107. When ALD-derived high-k HfAlOx thin films are employed as gate dielectrics, the source/drain voltage (VDS) can be substantially reduced by ten times to a range of only 03 V, along with a three times improvement in mobility to a respectable value of 15.9 cm2 V –1 s –1 . Successful integrations of logic operation, sensor, and flexible devices implies the potential prospect of a-IGZO NFN FETs in multifunctional electronics. The strategy for combining cryogenic processes and parallel arrays provides a feasible and reliable route in building future low-power, high-performance flexible electronics.
研究领域:
材料科学
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电子工程
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产品关联
DOI
高影响因子
Journal of Physical Chemistry Letters
·
2024
·
IF 4.8
Chuanyu Fu,Mengjiao Pei,Hangyuan Cui,Shuo Ke,Yixin Zhu,Changjin Wan,Qing Wan
Nanofiber neuromorphic transistors are regarded as promising candidates for mimicking brain-like learning and advancing high-performance computing. Composite nanofibers (CNFs) typically exhibit enhanced optoelectronic and mechanical properties. In this study, indium–gallium–zinc oxide (IGZO)/polyvinylpyrrolidone (PVP) CNFs were synthesized, and the neuromorphic transistor was integrated on both rigid and flexible substrates. The learning behavior, characterized by the transition from short-term plasticity (STP) to long-term plasticity, was achieved through photoelectric stimulation of the rigid neuromorphic transistor. The nonlinear STP was simulated by the flexible neuromorphic transistor through electrical pulses, matching effectively with a reservoir computing (RC) system. Hand gesture recognition with little energy consumption (49 pJ per reservoir state) and a maximum accuracy of 92.86% has been achieved by the RC system, proving the substantial potential of the IGZO/PVP CNF neuromorphic transistor for wearable intelligent processing tasks.
研究领域:
神经形态工程
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纳米技术
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光电子学
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人工智能
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柔性电子学
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储层计算
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DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2025
·
IF 6.9
Jiaming Guo,Shanhao Ze,Junbiao Wu,Zhiguo Zhang,Cong Luo,Fei Li,Fei Liu,Jing Li,Baodan Liu
In this study, we innovatively fabricated 2D IGZO ultrathin films with several nanometers and tunable compositions using a liquid metal alloy printing method. We systematically studied the relationship between the composition of In-Ga-Zn liquid alloys and the composition of 2D IGZO films and clarified the possible doping mechanism. It was found that the surface film composition was primarily governed by the Gibbs free energy generated from oxide formation. Importantly, Zn and Ga possess a strong and similar competitive oxidation behavior in the oxidation process of liquid InZnGa alloy, leading to the segregation of Ga 2 O 3 and ZnO in the oxide skin of InZnGa alloy. In this case, we control the micro doping level of Zn and Ga to realize the composition tailoring of 2D IGZO films. Additionally, this study also reveals that increasing the Zn content in the film reduces the band gap width, increases channel current, and shows a trend where conductivity and carrier mobility increase. In contrast, the increases of Ga content results in an obvious decline of electrical performance for 2D IGZO films. This study demonstrates the superiority of liquid metal printing in the fabrication of two-dimensional materials and optoelectronic devices.
研究领域:
材料科学
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纳米技术
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光电子学
·
薄膜技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
·
2024
·
IF 11.2
Can Fu,Zhi-Yuan Li,Yu-Jiao Li,Min-Min Zhu,Lin-Bao Luo,Shan-Shan Jiang,Yan Wang,Wen-Hao Wang,Gang He
The development of high-performance neuromorphic phototransistors is of paramount importance for image perception and depth memory learning. Here, based on metal-oxide heterojunction architecture, artificial synaptic phototransistors with synaptic plasticity have been achieved, demonstrating an artificial synapse that integrates central and optic nerve functions. Thanks to the sensitive light-detection properties, the optical power consumption of such photonic artificial synapses can be as low as 22 pico-joules, which is extremely competitive compared with other pure metal oxide photoelectric synapses ever reported. What is more, owing to its good short-term (STP) and tunable amplitude-frequency characteristics, the as-constructed device can function as a biomimetic high-pass filter for picture edge detection. Dual-mode synaptic modulation has been performed, combining photonic pulse with gate voltage stimulus. After photoelectric-synergistic modulation, the high synaptic weights enable the device to simulate complex neural learning rules for neuromorphic applications, including gesture recognition, image perception in the visual system, and classically conditioned reflexes. These results suggest that the current oxide-based heterojunction architecture displays potential application in future multifunction neuromorphic devices and systems.
✓ 已验证
DOI
高影响因子
ACS Applied Nano Materials
·
2025
·
IF 5.5
Zheng Wen,Fangzhou Yi,Guanlin Ke,Zhenhua Sun
This study investigates near-infrared (IR) phototransistors utilizing hybrid systems of indium gallium zinc oxide (IGZO) and PbSe colloidal quantum dots with distinct surface ligands and diameters. Tetrabutylammonium iodine (TBAI)-modified quantum dot film exhibits an insulative property and abundant traps. Under 1064 nm light illumination, the devices with TBAI-modified quantum dots achieve a high photoresponsivity of 2.63 × 104 A/W, a high detectivity of 1.15 × 1014 Jones, and an exceptional photosensitivity exceeding 107 in transient response. In contrast, the mercaptopropionic acid (MPA)-modified quantum dot film shows higher conductivity and fewer traps, resulting in faster relaxation of photon-induced carriers and a rapid response speed of the devices with MPA-modified quantum dots. Additionally, the device with MPA-modified quantum dots exhibits better air stability compared to the TBAI-modified device. The impact of quantum dot size on device performance was explored, revealing that the device based on larger PbSe quantum dots exhibits superior performance under 1550 nm illumination, with the photoresponsivity and detectivity reaching 4.96 × 105 A/W and 2.88 × 1015 Jones, respectively. This research provides valuable insights and suggests promising applications for IGZO-PbSe quantum dot hybrid systems in the development of high-performance near-IR photodetectors with customizable properties.
研究领域:
材料科学
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光电探测器
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纳米技术
✓ 已验证
产品关联
DOI
高影响因子
RARE METALS
·
2026
·Vol. 45
·期 4
·e70215
·
IF 12.1
Shanshan Jiang,Shuo Cheng,Jiawei Yang,Xiaohui Guo,Bo He,Gang He
en This link goes to a English section zh This link goes to a Chinese section The development of neuromorphic electronics with visual perception and adaptive capability is highly desirable for advancing artificial vision systems. Herein, we have demonstrated a dual-plasticity adaptive phototransistor based on IGZO nanofibers that exhibits the perception and dynamic adaptation behavior of rod and cone cells to varying light environments. Benefiting from the coexistence of oxygen vacancies and trap states in nanofibers, the separation and injection of photogenerated carriers are significantly improved, thereby enabling the light-intensity-dependent dynamic adaptability and the gate-modulated photosensitivity with a narrower adaptation timescale than the bio-systems (< 2 min). Moreover, the phototransistor array replicates both photopic and scotopic adaptation, and achieves adaptive contrast enhancement for the overexposed images. Finally, the system enables real-time neuromorphic encoding and recognition of digital signals under varying adaptive processes, and the pattern recognition accuracy is significantly improved from 10% to 95.8%. These results not only demonstrate a facile route for bridging visual sensing, adaptive processing, and neuromorphic computing in a single transistor device but also lay the groundwork for future applications in machine vision and next-generation neuromorphic sensory systems. 摘要 en This link goes to a English section zh This link goes to a Chinese section 发展具备视觉感知与自适应能力的神经形态电子器件对于推动人工视觉系统具有重要意义。本文报道了一种基于IGZO纳米纤维的双重可塑性自适应光电晶体管,该器件能够模拟视网膜中视杆细胞与视锥细胞对不同光照环境的感知与动态自适应行为。得益于纳米纤维中氧空位与陷阱态的共存,光生载流子的分离与注入效率得到显著提升,从而实现了光强依赖的动态自适应特性以及栅压可调的光敏响应,其自适应时间尺度较生物系统(< 2分钟)更短。此外,该光电晶体管阵列成功复现了明视觉与暗视觉自适应机制,并对过曝光图像实现了自适应对比度增强。最终,该系统能够在不同自适应过程中完成数字信号的实时神经形态编码与识别,将模式识别准确率从10%显著提升至95.8%。这些研究成果不仅为在单一晶体管器件中实现视觉感知、自适应处理与神经形态计算的融合提供了一条创新路径,也为机器视觉与下一代神经形态传感系统的应用奠定了坚实基础.
✓ 已验证
DOI
高影响因子
Science China-Materials
·
2024
·Vol. 67
·期 8
·2661-2670
·
IF 6.8
Peng Wenhong,Liu Changfei,Xu Chenhui,Qin Congyao,Qin Ningpu,Chen Huipeng,Guo Tailiang,Hu Wenping
The large-scale fabrication and patterning of artificial perceptual systems are vital for the development of bionic systems. Traditional patterning processes are often constrained by the use of mask versions, which are not only expensive but also challenging to produce on a large scale. Inkjet printing technology with maskless patterning capability is well suited for current demands for large-scale preparation and patterning. However, the application of printing techniques is typically confined to the production of simple devices or the preparation of patterned active layers within more complex devices. In this study, we successfully fabricated fully inkjet-printed indium gallium zinc oxide (IGZO) memristor arrays to mimic artificial nociceptor (pain receptors). By integrating a layer of silver into the all metal-oxide indium tin oxide (ITO)/IGZO/ITO memristor, we achieved stable threshold switching characteristics, a large current switching ratio of 10 5 , excellent switching durability of 10 4 cycles scans, and excellent spatial uniformity. We investigated the Ag-based conductive filament conduction mode and mimic LIF characteristics (leaky, integrate and fire), demonstrating the potential of the memristor as an artificial neuron. Lastly, we successfully implemented artificial nociceptor, including “threshold fire”, “relaxation”, “non-adaptation”, and “sensitization”, leveraging the stable threshold switching properties of the device. Our work demonstrates the significant potential of inkjet printing technology in the realization of bionic systems.
✓ 已验证
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2024
·Vol. 35
·期 12
·872
·
IF 2.8
Bao Jiachen,Huang Luying,Liu Yan,Liu Fenghua,Xie Hangxing,Wu Weiping
In this paper, a three-step annealing process was employed to treat IGZO thin-film field-effect transistors (TFTs). We observed that TFTs prepared by an initial high-temperature thermal annealing exhibited a low threshold voltage. By employing a second-step low-temperature annealing, the threshold voltage of the TFT was positively shifted, demonstrating improved turn-off characteristics. However, after this process, a significant decrease in TFT mobility and a change in threshold voltage were observed. By introducing a third 633 nm laser annealing technique, we managed to control the threshold voltage and improve mobility. To investigate the mechanism of the changes in TFT performances up to different post-annealing processes, a series of characterization techniques were employed to explain the TFT performance changes.
研究领域:
材料科学
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半导体器件
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薄膜电子学
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光电子学
·
退火技术
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）