Colossal permittivity and low loss in (In0.5Ta0.5)0.1Ti0.9O2 ceramics with a stable temperature range of X9D
The abundant requirements of smart terminals promote the rapid development of dielectric materials to further realize the integration and miniaturization of electronic devices. In this work, based on a solid-state reaction method, (In 0.5 Ta 0.5 ) 0.1 Ti 0.9 O 2 (ITTO) ceramics with dense microstructure, colossal permittivity of 1.18 × 10 5 , and ultralow dielectric loss of 0.0072 were obtained at 1 kHz and room temperature. In addition, the temperature coefficient stability and range of the ITTO ceramics were between ± 3.3% and − 100 to 235 °C, satisfying X9D (− 55 to 200 °C, Δ ε r / ε 25°C < ± 3.3%) requirement at 1 kHz. The dielectric mechanisms could be connected to the electron hopping and internal barrier layer capacitor (IBLC) effects. Thus, the acquired ITTO ceramics have advanced advantages with excellent dielectric properties and temperature stability in the practical applications of microelectronic fields.
危险品化学品经营许可证（带存储）