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SENSORS AND ACTUATORS B-CHEMICAL · 2024 · IF 8

Co ions doping enhances n-butanol sensing performance of In2O3 nanospheres

Zhiguo Yang,Xingtai Chen,Qiuying Chen,Jiayi Qu,Yujun Guo,Kaiwen Zhou,Tianren Wang,Davoud Dastan,Xiaoning Wang,Feifei Wang,Xiaoming Tan,Xi-Tao Yin,Xiaoguang Ma

In this work, In 2 O 3 nanospheres were synthesized using urea as a carbon template and modified with Co ions. The synthesized materials were characterized using various instruments to obtain information about the elemental composition and morphology of the materials. The results showed that Co ions replaced the lattice position of In ions and synthesized nanospheres aggregated from 20 nm particles. The results of gas sensitivity tests on all the samples showed that the response to 50 ppm n-butanol at 250 °C reached 540 when Co was doped up to 5 at%. In comparison, the sensor showed very low response to benzene gas with good selectivity. The high response of the sensor to n-butanol is due to the increase in vacancy oxygen content and redox reactions due to the multivalent nature of Co ions. The article concludes with a detailed analysis of the sensing mechanism.

研究领域: 材料科学 · 传感器技术
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JOURNAL OF ALLOYS AND COMPOUNDS · 2021 · IF 5.316

Sensitivity enhanced and selectivity improved ethanol sensor based on ZnIn2S4 nanosheet-coated In2O3 nanosphere core-shell heterostructure

Hongjie Liu,Jiarong Xv,Liwei Wang,Yixin Qian,Hao Fu,Minxuan Huang,Xiyong Chen

Constructing core-shell heterostructures can effectively improve the hindered issues such as decreased sensitivity and poor selectivity from the chemoresistive gas sensors in the complex atmosphere. Herein, an effective hydrothermal-water bath treatment combined strategy was designed to obtain the unique ethanol adsorption preferred ZnIn 2 S 4 sheet shell/In 2 O 3 sphere core (ZnIn 2 S 4 @In 2 O 3 ) nanosphere (NS) heterostructures. Particularly, according to the characterization and gas sensing test results, the chemoresistive sensor of ZnIn 2 S 4 @In 2 O 3 NS-2 with the highest chemisorbed oxygen concentration shows satisfactory selectivity to ethanol vapor, and the response is the highest (54) compared to other composite controls, which is almost 4-fold of that of the pure In 2 O 3 NS reference. Besides, the relatively lower working temperature (220 °C), low limit of detection (LOD, 30 ppb) and long-term stability were also obtained. The enhanced performance of the core-shell ZnIn 2 S 4 @In 2 O 3 NS-2 based sensor may be due to the synergistic effect between ZnIn 2 S 4 sheets and In 2 O 3 sphere moieties. Meanwhile, the large specific surface area from the outer shell of ZnIn 2 S 4 sheets is also another contribution factor, which supplies the most chemisorbed oxygen sites and transportation channels to promote the interfacial gas diffusion, catalytic oxidation and product desorption.

研究领域: 材料科学 · 化学传感 · 纳米技术
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Small · 2025 · IF 12.1

Double-Phase Ga-Doped In2O3 Nanospheres and Their Self-Assembled Monolayer Film for Ultrasensitive HCHO MEMS Gas Sensors

Yanlin Zhang,Changming Zhang,Zheng Zhang,Huakang Zong,Pengwei Tan,Liyang Luo,Yuanyuan Luo,Guotao Duan

In the sensing field, the electronic structure of sensing materials has a great influence on the properties of the sensors. Here, by Ga doping pure rhombohedral In 2 O 3 (h-In 2 O 3 ), the double-phase In 2 O 3 (cubic/rhombohedral In 2 O 3 , c/h-In 2 O 3 ) porous nanospheres are obtained. And then Micro Electromechanical System (MEMS) gas sensors based on monolayer film are further fabricated by self-assembling the above nanospheres. The 5% Ga-doped In 2 O 3 sensors exhibit excellent HCHO sensing performance with a high-response (110.6@100 ppm), rapid response/recovery time (5.2/18.4 s) and low limit of detection (50 ppb) at an operating temperature of 180 °C. The 5% Ga-doped In 2 O 3 sensors also show high consistency (fluctuations of only 8.3%). Besides, a handheld device is developed to enable real-time monitoring and early warning of indoor HCHO at ppb-level. Based on experimental results and DFT theoretical calculation, the enhanced sensing mechanism is revealed, which is correlated with the optimization of electronic band structure by Ga doping and the appearance of double-phase heterostructures caused by Ga doping. Therefore, the relationship between electronic structure and gas sensing properties has also been established. This work significantly introduces a novel approach for the mass production of MEMS gas sensors, ensuring high sensitivity, repeatability and consistency.

研究领域: 材料科学 · 传感器技术 · 环境监测
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JOURNAL OF ALLOYS AND COMPOUNDS · 2024 · IF 5.8

MOF-derived porous In2O3 nanospheres sensitized by CdS quantum dots: A ppb-level NO2 sensor with ultra-high response at room-temperature

Yu Qiao,Jinniu Zhang,Jia Liu,Yumeng Liu,Xinlei Zhang,Zhibo Yang,Xiaoqiang Yin,Jianzhi Gao,Chunlan Wang,Hongbing Lu

NO 2 is one of the most important atmosphere pollutants, causing great harm to the human body at very low concentrations (ppb levels). Herein, a novel fabrication idea for gas sensing materials was reported to detect ppb-level NO 2 via MOF-derived porous In 2 O 3 nanospheres (NSs) sensitized by CdS quantum dots (QDs). The good distribution of CdS QDs (2.5–4.0 nm) on porous In 2 O 3 NSs was verified by the transmission electron microscopy and element mapping analyses. In comparison to In 2 O 3 NSs, the CdS@In 2 O 3 composite nanospheres (CNSs) exhibited exceptional responses to ppb-level concentrations of NO 2 ( S =425.1@100 ppb) at room temperature (RT, 25 °C), while also demonstrating good selectivity and response reproducibility. These improvements in sensing performance were attributed to the synergies of the electronic effects of CdS QDs, MOF-derived porous nanostructures , and enhanced adsorption of NO 2 and active O 2 – by well-dispersed CdS QDs. This work emphasizes that the MOF-derived In 2 O 3 porous NSs sensitized by CdS QDs can accurately detect ppb-level concentrations of the NO 2 at RT.

CAS / MDL: 25322-68-3 1313-84-4
研究领域: 材料科学 · 环境科学 · 纳米技术
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