Small
·
2017
·Vol. 13
·期 18
·1604033
·
IF 8.643
Shuo Chen,Xuemei Liu,Xvsheng Qiao,Xia Wan,Khurram Shehzad,Xianghua Zhang,Yang Xu,Xianping Fan
An effective colloidal process involving the hot-injection method is developed to synthesize uniform nanoflowers consisting of 2D γ-In 2 Se 3 nanosheets. By exploiting the narrow direct bandgap and high absorption coefficient in the visible light range of In 2 Se 3 , a high-quality γ-In 2 Se 3 /Si heterojunction photodiode is fabricated. This photodiode shows a high photoresponse under light illumination, short response/recovery times, and long-term durability. In addition, the γ-In 2 Se 3 /Si heterojunction photodiode is self-powered and displays a broadband spectral response ranging from UV to IR with a high responsivity and detectivity. These excellent performances make the γ-In 2 Se 3 /Si heterojunction very interesting as highly efficient photodetectors.
研究领域:
材料科学
·
光电子学
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DOI
高影响因子
Journal of Materials Chemistry A
·
2025
·
IF 9.5
Neway Belachew,Qitao Liu,Weilong Qin,Muhammad Bilal Akbar,Jing Gao,Hao Wang,Jiabo Le,Qinglu Liu,Yongbo Kuang
Photoelectrochemical (PEC) water splitting holds promise as a major source of sustainable energy production in the future. However, stable photoelectrodes for long-term use, particularly in harsh environments, remain challenging for large-scale PEC applications. Herein, this study reports facile, rapid, and scalable deposition of two-dimensional (2D) In2Se3 protection layers to improve the photoelectrochemical performance and stability at pH 12.3 and pH 13, where bismuth vanadate (BiVO4) is typically unstable. BiVO4/In2Se3 achieves a photocurrent density of 12.38 mA cm−2 at 1.23 V vs. reverse hydrogen electrode (RHE) under 455 nm (39 mW cm−2) LED light illumination at pH 12.3. The suitable energy alignment of In2Se3 boosts hole extraction from BiVO4 and prolongs the lifetime of holes before recombination. The photoelectrochemical stability tests reveal that the In2Se3-protected BiVO4 achieved over 40 h stability at pH 12.3. Studies on the corrosion mechanism of BiVO4/In2Se3 show that the oxidation of In2Se3 by the hole accumulation at the surface destabilizes its lattice structure, which impedes the formation of chemically stable In2Se3 in the given chemical environment. Therefore, a catalyst layer or a fast-kinetics reaction medium is required to utilize the accumulated holes at the surface, which enables the long-term use of protective layers in alkaline environments.
研究领域:
材料科学
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能源科学
·
电化学
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产品关联
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2022
·
IF 16.744
Guanhua Zhang,Xiaojing Li,Donghai Wei,Huihuang Yu,Jinghua Ye,Song Chen,Wen Zhang,Jian Zhu,Xidong Duan
As a representative two-dimensional layered material, In 2 Se 3 attracts an increasing research interest because of the virtue of high theoretical lithium-ion storage capacity. However, the development of In 2 Se 3- based anode is primarily confined by the poor electronic conductivity and inevitable volume variations. Moreover, the lithium − ion storage mechanism of In 2 Se 3 - based electrode is still not clear. Here, we report a facile construction strategy for metal-organic frameworks (MOFs)-derived In 2 Se 3 nanocrystals encapsulated in porous nitrogen − doped carbon conductive matrix (In 2 Se 3 /PNC). The In 2 Se 3 /PNC with porous structure and rich N − doped carbon affords highly efficient channels for rapid transportation of ions and electrons. Meanwhile, as the heterogeneous structure provides sufficient void space to relieve the internal mechanical stress during the repeated charge–discharge processes. Thus, the optimized In 2 Se 3 /PNC − 800 (annealed at 800 °C) electrode exhibits a capacity as high as 1038 mAh/g at 200 mA g −1 , remarkable cycling stability over 2000 cycles and a comparable high-rate capability. Moreover, the reaction mechanism of the In 2 Se 3 with Li + is revealed through in-situ XRD and density functional theory (DFT) simulations. This study may present broad opportunities for reliable construction of high-capacity selenium-based composites for energy storage.
研究领域:
材料科学
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能源存储
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产品关联
DOI
高影响因子
SENSORS AND ACTUATORS B-CHEMICAL
·
2024
·
IF 8
Haixia Xing,Xinlei Li,Shupeng Sun,Baoyu Huang,Xiaogan Li
The γ-In 2 Se 3 /In 2 O 3 nanoflower-like heterojunctions were synthesized by solvothermal treatment followed by thermal oxidation in Air. The nanoflower-like γ-In 2 Se 3 /In 2 O 3 -based chemiresistive-type sensor showed a significantly enhanced response to NO 2 at an operating temperature of 170°C. The sensor achieves a response of 2.69–0.2 ppm NO 2 at 170°C. The sensor exhibits remarkable selectivity to several possible interferents such as carbon monoxide , ammonia, formaldehyde, acetone, methanol, and toluene, and good stability at 170°C. The nanoflower structure increases the specific surface area and introduces more active sites, which improves the sensitivity of the sensor to NO 2 . The heterojunction formed between γ-In 2 Se 3 and In 2 O 3 improves the charge carrier transfer between NO 2 gas molecules and sensing materials, thereby increasing the response of the sensor to NO 2 . Density functional theory was used to elucidate this sensing mechanism, and it was found that improved sensing performance is mainly due to heterojunction formation , which increases the adsorption energy of nitrogen dioxide molecules on a sensing material surface and facilitates charge transfer between molecules.
研究领域:
材料科学
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环境科学
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DOI
高影响因子
ACS Nano
·
2023
·
IF 17.1
Yingying Niu,Xin Zhou,Wei Gao,Maixia Fu,Yule Duan,Jiandong Yao,Bing Wang,Mengmeng Yang,Zhaoqiang Zheng,Jingbo Li
Driven by the rapid development of autonomous vehicles, ultrasensitive photodetectors with high signal-to-noise ratio and ultraweak light detection capability are urgently needed. Due to its intriguing attributes, the emerging van der Waals material, indium selenide (In2Se3), has attracted extensive attention as an ultrasensitive photoactive material. However, the lack of an effective photoconductive gain mechanism in individual In2Se3 inhibits its further application. Herein, we propose a heterostructure photodetector consisting of an In2Se3 photoactive channel, a hexagonal boron nitride (h-BN) passivation layer, and a CsPb(Br/I)3 quantum dot gain layer. This device manifests a signal-to-noise ratio of 2 × 106 with responsivity of 2994 A/W and detectivity of 4.3 × 1014 Jones. Especially, it enables the detection of weak light as low as 0.03 μW/cm2. These performance characteristics are ascribed to the interfacial engineering. In2Se3 and CsPb(Br/I)3 with type-II band alignment promote the separation of photocarriers, while h-BN passivates the impurities on CsPb(Br/I)3 and promises a high-quality carrier transport interface. Furthermore, this device is successfully integrated into an automatic obstacle avoidance system, demonstrating promising application prospects in autonomous vehicles.
研究领域:
材料科学
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电子工程
·
纳米技术
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产品关联
DOI
PubMed
高影响因子
CHEMISTRY-A EUROPEAN JOURNAL
·
2018
·Vol. 24
·期 71
·19060-19065
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IF 5.16
Chunli Zhu,Haijing Shen,Haoyang Liu,Xiaobo Lv,Zhihao Li,Quan Yuan
Graphical Large-scale 2D α-In 2 Se 3 nanosheets were prepared by a solvent exfoliation technique. The obtained α-In 2 Se 3 nanosheets exhibit excellent near-infrared (NIR) photothermal performance under an 808 nm laser irradiation, which leads to a significant antibacterial effect. The excellent photothermal performance highlights the potential application in chemical and biological fields of α-In 2 Se 3 nanosheets. Two-dimensional (2D) nanoflakes represent an appealing class of materials for optoelectronics applications due to their unique layered structures and excellent electronic properties. However, the lack of easy-to-manipulate and effective methods for large-scale production of these 2D materials limits their potential for applications. Also, few efforts have been made to explore their applications in biological fields. This work reports the preparation of large quantities of 2D In 2 Se 3 nanosheets through a solvent exfoliation technique. Transmission electron microscopy and atomic force microscopy results show that the In 2 Se 3 nanosheets are obtained with lateral sizes of tens of nanometers to hundreds of nanometers and thickness of 2–17 layers. Raman features coupled with the X-ray diffractometry results unequivocally confirm the as-prepared In 2 Se 3 nanosheets to be α phase. Moreover, these α-In 2 Se 3 nanosheets exhibit an excellent near-infrared (NIR) photothermal performance under an 808 nm laser irradiation. NIR photo-excitation of the α-In 2 Se 3 nanosheets in the presence of bacteria leads to a significant antibacterial effect, suggesting that these nanosheets have great potential to be photothermal antibacterial agents. Our work on α-In 2 Se 3 nanosheets presents an available method for exfoliating 2D layered materials, and highlights the potential application in chemical and biological fields of α-In 2 Se 3 nanosheets.
研究领域:
材料科学
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纳米技术
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生物医学工程
·
光电
✓ 已验证
DOI
PubMed
高影响因子
ADVANCED MATERIALS
·
2024
·Vol. 36
·期 38
·2405233
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IF 27.4
Kai Zhang,Haozhe Li,Haoran Mu,Yun Li,Pu Wang,Yu Wang,Tongsheng Chen,Jian Yuan,Weiqiang Chen,Wenzhi Yu,Guangyu Zhang,Qiaoliang Bao,Shenghuang Lin
Light-induced ferroelectric polarization in 2D layered ferroelectric materials holds promise in photodetectors with multilevel current and reconfigurable capabilities. However, translating this potential into practical applications for high-density optoelectronic information storage remains challenging. In this work, an α-In 2 Se 3 /Te heterojunction design that demonstrates spatially resolved, multilevel, nonvolatile photoresponsivity is presented. Using photocurrent mapping, the spatially localized light-induced poling state (LIPS) is visualized in the junction region. This localized ferroelectric polarization induced by illumination enables the heterojunction to exhibit enhanced photoresponsivity. Unlike previous reports that observe multilevel polarization enhancement in electrical resistance, the device shows nonvolatile photoresponsivity enhancement under illumination. After polarization saturation, the photocurrent increases up to 1000 times, from 10 −12 to 10 −9 A under the irradiation of a 520 nm laser with a power of 1.69 nW, compared to the initial state in a self-driven mode. The photodetector exhibits high detectivity of 4.6×10 10 Jones, with a rise time of 27 µs and a fall time of 28 µs. Furthermore, the device's localized poling characteristics and multilevel photoresponse enable spatially multiplexed optical information storage. These results advance the understanding of LIPS in 2D ferroelectric materials, paving the way for optoelectronic information storage technologies.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Small
·
2024
·
IF 13
Rongshuo Guo,Linghua Jin,Ye Zhang
Piezo-catalysis emerges as an efficient, safe, and affordable strategy for removing hazardous substances from aquatic environments. Here, the BiFeO 3 @In 2 Se 3 heterojunction demonstrates remarkable prowess as a piezo-catalyst, enabling the high-efficiency removal of uranium (U) from U(VI)-containing water. A total U(VI) removal efficiency of 94.6% can be achieved under ultrasonic vibration without any sacrificial agents. During the entire catalytic process, piezo-induced electrons, hydroxyl radicals, and superoxide radicals play important roles in U(VI) removal, while the generated H 2 O 2 is responsive to the transformation of soluble U(VI) into insoluble (UO 2 )O 2 •2H 2 O and UO 3 . Furthermore, auxiliary illumination can accelerate the increase of free charges, enabling the piezo-catalyst to retain more charges. This leads to an improved U(VI) removal efficiency of 98.8% and a significantly increased reaction rate constant. This study offers a comprehensive analysis of the fabrication of high-efficiency piezo-catalysts in the removal or extraction of U(VI) from U(VI)-containing water.
研究领域:
环境科学
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材料科学
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核工程
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产品关联
DOI
PubMed
高影响因子
Journal of Water Process Engineering
·
2024
·
IF 6.3
Rongshuo Guo,Linghua Jin,Hongqing Wang,Ruibin Wang,Xinyi Zhang,Ye Zhang
Effective catalytic methods and catalysts for the simultaneous removal of coexisting organic pollutants and heavy metal ions are crucial for sustainable and environmentally friendly water purification. Herein, flower-like S-scheme In 2 Se 3 @Ag 3 PO 4 heterojunctions were synthesized by a two-step hydrothermal method for simultaneous removal of uranium (VI) (U(VI)) and organic pollutants using piezo-photocatalysis. Characterization and theoretical calculations confirmed the formation of the heterojunction, highlighting the significance of In O and Se P bonds in the S-scheme for enhancing photocatalytic reactions by improving charge carrier separation and migration. Additionally, the piezoelectric polarization electric field can also improve photocatalytic performance. The optimized In 2 Se 3 @Ag 3 PO 4 –3 catalyst demonstrated superior piezo-photocatalytic performance in synergistically removing U(VI) and degrading organics, such as tetracycline (TC), bisphenol A (BPA), carbamazepine (CBZ), levofloxacin (LVX), and norfloxacin (NOR). Particularly, in the presence of TC, the catalyst achieved 98.7 % U(VI) removal, and 94.1 % TC degradation within 30 min. This study introduces a promising strategy and a novel heterojunction catalyst with dual functional properties for the simultaneous treatment of wastewater containing organic pollutants and U(VI).
研究领域:
环境科学
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材料科学
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DOI
高影响因子
RSC Advances
·
2016
·Vol. 6
·期 74
·70452-70459
·
IF 3.289
Makkawi Osman,Yanmin Huang,Wei Feng,Guangbo Liu,Yunfeng Qiu,PingAn Hu
Phase engineering of two-dimensional (2D) materials offers unique opportunities for acquiring novel opto-electronic properties and allows for the searching of outstanding candidates for applications in opto-electronic detectors, sensors, catalysis, or phase-change memory devices. Here, we report the phase-transformation from β-InSe to γ-In2Se3, exploiting the thermal annealing route to trigger the process starting at 200 °C that expands the family of phase-change materials. The presence of γ-In2Se3 is solidly confirmed by the characteristic peaks in X-ray diffraction (XRD) and energy dispersive X-ray (EDX), and is quite stable at ambient condition, thus facilitating substantial application in phase-change memory devices. A Raman shift in the A′1 mode from 225 cm−1 to 230 cm−1 further illustrates the phase transformation. Besides the photoluminescence (PL) peak of β-InSe, the ∼2 eV PL peak, ascribed to γ-In2Se3, is observed in the annealed nanosheet. The increased PL band gap of β-InSe as a function of annealing temperature during phase transformation was possibly affected by the suppressed interlayer coupling, as well as the planar quantum confinement of photo-excited carriers by the external surfaces of the sheets. The photodetector performance with respect to photocurrent, mobility, detectivity, responsivity, and external quantum efficiency was subsequently evaluated after thermal annealing, showing deteriorated optical performance. The present work proved that thermal annealing could induce the successful phase transformation, and adjusted the opto-electronic properties in some extent, providing useful information for processing 2D materials based nano-devices.
研究领域:
材料科学
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光学工程
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
Micromachines
·
2022
·Vol. 13
·期 6
·956
·
IF 3.523
Xiangxiang Gao,Hai-Yang Liu,Jincheng Zhang,Jian Zhu,Jingjing Chang,Yue Hao
The wafer-scale fabrication of two-dimensional (2D) semiconductor thin films is the key to the preparation of large-area electronic devices. Although chemical vapor deposition (CVD) solves this problem to a certain extent, complex processes are required to realize the transfer of thin films from the growth substrate to the device substrate, not to mention its harsh reaction conditions. The solution-based synthesis and assembly of 2D semiconductors could realize the large-scale preparation of 2D semiconductor thin films economically. In this work, indium selenide (In2Se3) nanosheets with uniform sizes and thicknesses were prepared by the electrochemical intercalation of quaternary ammonium ions into bulk crystals. Layer-by-layer (LbL) assembly was used to fabricate scalable and uniform In2Se3thin films by coordinating In2Se3with poly(diallyldimethylammonium chloride) (PDDA). Field-effect transistors (FETs) made from a single In2Se3flake and In2Se3thin films showed mobilities of 12.8 cm2·V−1·s−1and 0.4 cm2·V−1·s−1, respectively, and on/off ratios of >103. The solution self-assembled In2Se3thin films enriches the research on wafer-scale 2D semiconductor thin films for electronics and optoelectronics and has broad prospects in high-performance and large-area flexible electronics.Keywords:two dimensional semiconductors;layer-by-layer assembly;field-effect transistors
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
APPLIED CATALYSIS B-ENVIRONMENTAL
·
2025
·
IF 21.1
Xinyi Zhang,Yinxiang Chen,Rongshuo Guo,Zhijun Zhang,Zhe Sun,Ye Zhang,Feng Yan
Ionic liquids (ILs) have emerged as new persistent pollutants in aquatic environments due to their notable ecotoxicity. Herein, In 2 Se 3 @Ag 3 PO 4 S-scheme piezo-photocatalyst with interfacial In-O and Se-P covalent bonds is prepared for efficient degradation of 1-butyl-2,3-dimethylimidazole bromide ([BMMIm]Br). The experimental results demonstrate that 98.3 % of [BMMIm]Br is degraded under piezo-photocatalysis. Notably, [BMMIm]Br functions as a hole sacrificial agent, leading to a simultaneous H 2 production rate of 582.7 μmol g −1 h −1 and a co-removal efficiency of 97.2 % for radioactive heavy metal ions of U(VI), achieving the "three birds with one stone" effect. Density functional theory (DFT) calculations indicate that the S-scheme structure, combined with the In-O and Se-P covalent bonds and the piezoelectric effect, effectively promotes the separation of electron/hole pairs while inhibiting carrier recombination dynamics, thereby enhancing piezo-photocatalytic performance. Moreover, systemic toxicity evaluations, including assessments of calculated toxicity, zebrafish growth, and bean sprout development, were conducted to verify the reduced toxicity of the degraded intermediates, highlighting the potential practical applications of this approach.
研究领域:
环境科学
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材料科学
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化学工程
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产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）