文献检索

查找使用阿拉丁产品的科研文献

检索与阿拉丁产品相关的同行评审论文、DOI、PubMed 编号、期刊、作者、CAS 号及研究领域。

科研影响力快照

与阿拉丁产品相关的已发表科研成果

在搜索之前,这些指标可帮助访客快速了解产品关联科研的规模与质量。

346,364+ SCI 论文 与阿拉丁产品引用相关
2,295,288.15 总影响因子 匹配文献记录中影响因子的总和
81.20 最高期刊影响因子 匹配期刊中的最高 IF
6.63 平均期刊影响因子 匹配文献的平均 IF

参考指标 指标基于阿拉丁文献引用数据库及期刊影响因子记录。文献关联仅供科研参考,请以原始文献为准。

热门产品

视图 列表 网格

2 项

设置提升方向
In4Se3
MATERIALS LETTERS · 2018 · IF 2.687

In4Se3 alloy core thermoelectric fibers

Min Sun,Guowu Tang,Guoquan Qian,Wangwang Liu,Zhenguo Shi,Dongdan Chen,Qi Qian,Zhongmin Yang

In 4 Se 3 exhibits high thermoelectric performance as a typical example of semiconductors, which is a promising thermoelectric candidate for energy conversion applications. Here, InSe alloy core thermoelectric fibers with glass cladding were fabricated by a reactive molten core drawing method. The as-drawn fiber core was found to be InSe crystals as evidenced by X-ray diffraction. The In 4 Se 3 crystals were obtained in the fiber core by annealing the as-drawn fibers. The Seebeck coefficient of the In 4 Se 3 core fibers (−347 μV/K) was enhanced by ∼85% compared with that of the as-drawn InSe core fibers (−189 μV/K). This work constitutes a proof-of-concept that thermoelectric materials can be incorporated into fibers, which have promising applications in fiber-based thermoelectric devices.

CAS / MDL: 7440-74-6
研究领域: 材料科学 · 能源转换技术
✓ 已验证 产品关联 DOI 高影响因子
查看原文 查看 PubMed
Journal of Materiomics · 2022 ·Vol. 8 ·期 5 ·982-991 · IF 8.589

A promising thermoelectrics In4SnSe4 with a wide bandgap and cubic structure composited by layered SnSe and In4Se3

Haonan Shi,Changrong Guo,Bingchao Qin,Guangtao Wang,Dongyang Wang,Li-Dong Zhao

The wide-bandgap cubic-structure semiconductor In 4 SnSe 4 can be regarded as a product of compositing two typical layered thermoelectric materials SnSe and In 4 Se 3 . Remarkably, In 4 SnSe 4 inherited low thermal conductivity from its parent materials. To advance the potential thermoelectric property of In 4 SnSe 4 , we systematically investigated its crystal structure and the origin of the intrinsic low thermal conductivity. In 4 SnSe 4 crystallized in a cubic phase (space group P a 3 ¯ ), with the lattice parameters of a  =  b  =  c  = 12.66 Å. The anisotropy of In Se bonds in the lattice determined the complex structure of In 4 SnSe 4 with 72 atoms in the primitive cell. More importantly, sound velocity and elastic properties unclosed the strong anharmonicity in In 4 SnSe 4 , which contributed greatly to the low thermal conductivity. With first-principles calculations, it was found that the lone-pair electrons from In + mainly caused the anharmonicity in the lattice. Additionally, Br was proved to be an effective dopant for In 4 SnSe 4 to improve the electrical transport properties. This work indicated that the complex wide-bandgap semiconductor In 4 SnSe 4 with cubic phase and intrinsic low thermal conductivity was a new promising thermoelectric material with appropriate doping.

研究领域: 材料科学 · 热电学 · 凝聚态物理 · 晶体学 · 计算材料科学
✓ 已验证 DOI 高影响因子
查看原文 查看 PubMed
已复制

文献关联基于可获得的产品、CAS、DOI 及引用记录。收录不代表作者或出版方对阿拉丁产品的背书,请以原始文献为准。