Journal of Materials Chemistry C
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2024
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IF 5.7
Xiaobo Ding,Hailong Hu,Tailiang Guo,Fushan Li
InP quantum dots have received intensive attention due to their tunable emission wavelengths, narrow bandwidths, and high color purity. Nevertheless, InP quantum dots exhibit notable instability in a complex environment due to their highly oxidizable properties. In this study, we present a strategy for synthesizing InP@Al2O3 nanocomposites that have InP quantum dots evenly embedded in a hybrid substrate containing Al2O3 and coupling-interconnection layers of Si and Al. In addition, we used high-power UV irradiation to repair the defects generated during the synthesis process, leading to photoluminescence (PL) intensity increase of more than 10 times. InP@Al2O3 nanocomposites have demonstrated up to 9 h of laser stability, 30 days of water stability and acid stability and 20 days of alkali stability. It has far exceeded that of InP quantum dots and commercially available phosphors. Distal-type light-emitting diodes (LEDs) with stable and standard white emission can be realized by combining red and green InP@Al2O3 nanocomposites with blue LED chips.
研究领域:
材料科学
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光学工程
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纳米技术
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DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
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2025
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IF 6.3
Chunyan Zhang,Yu Liu,Yi Zhao,Yining Qu,Li Wang,Han Zhang,Daomei Chen,Jiaqiang Wang
Most photocatalysts reported to date require sacrificial agents to achieve high-efficiency photocatalytic production of H 2 O 2 . Developing photocatalysts for H 2 O 2 production without sacrificial agents remains a significant challenge. In this study, we proposed an interfacial Schottky junction consisting of InP quantum dots (QDs) and Ti 3 C 2 T x nanosheets for photocatalytic production of H 2 O 2 without relying on any sacrificial agents. The InP/Ti 3 C 2 T x photocatalyst demonstrated high efficiency in generating H 2 O 2 , even when tested in wastewater and tap water. The photocatalytic rate of 5InP/Ti 3 C 2 T x reached 21.31 mmol g⁻¹ h⁻¹, which is 112 times greater than InP QDs. The 5InP/Ti 3 C 2 T x catalyst achieved a degradation performance of 99.9% for acid orange 7. The photocatalytic production of H 2 O 2 was effectively utilized in actual wastewater to decrease chemical oxygen demand (COD) levels. The COD concentration was decreased to 67 mg L −1 , well below the permissible threshold set by China's Ministry of Ecology and Environment for coking chemical industry emissions. As far as we know, no prior study has documented the application of InP in the photocatalytic production of H 2 O 2 within actual wastewater. This research explores the applications and impacts of InP compounds in the field of photocatalysis. This work introduces a novel approach for sacrificial agent-free photocatalytic H 2 O 2 production, offering a significant advancement in the field.
研究领域:
材料科学
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环境科学
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化学工程
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DOI
高影响因子
Coatings
·
2021
·Vol. 11
·期 5
·581
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IF 2.881
Linyuan Lian,Youyou Li,Daoli Zhang,Jianbing Zhang
InP quantum dots (QDs) are promising down-conversion phosphors for white light LEDs. However, the mainstream InP QDs synthesis uses expensive phosphorus source. Here, economic, in situ-generated PH3is used to synthesize InP QDs and a two-step coating of ZnS shells is developed to prepare highly luminescent InP/ZnS/ZnS QDs. The QDs show a photoluminescence quantum yield as high as 78.5%. The emission can be tuned by adjusting the halide precursor and yellow emissive InP/ZnS/ZnS QDs are prepared by judiciously controlling the synthetic conditions. The yellow QDs show suppressed thermal quenching and retain >90% room temperature PL intensity at 150 °C for the growth solution. Additionally, the PL spectrum matches with the eye sensitivity function, resulting in efficient InP QD white light LEDs.Keywords:InP;quantum dots;core/shell;InP/ZnS;thermal quenching
研究领域:
材料科学
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光学工程
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DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
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2024
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IF 5.8
Chunyan Zhang,Xiaohong Chen,Yanmi Liu,Yi Zhao,Han Zhang,Daomei Chen,Shirong Zong,Jiaqiang Wang
Most photocatalysts reported to date need sacrificial agents (ethanol or methanol) to quench h + and facilitate the reduction of O 2 to H 2 O 2 . This requirement increases the cost of H 2 O 2 production and hinders the advancement of photocatalytic technology. Exploring a novel photocatalyst without the sacrificial agents for photocatalytic production of H 2 O 2 remains a huge challenge. In this research, we designed Indium phosphide (InP) quantum dot (QDs)-decorated bismuth tungstate (Bi 2 WO 6 ) microspheres for the photocatalytic generation of H 2 O 2 without the use of any sacrificial agents. The photocatalytic efficiency of InP/Bi 2 WO 6 composites for H 2 O 2 production reached 17.45 mmol g −1 h −1 , which is 90.8 times and 53.6 times greater than pure InP and Bi 2 WO 6 , respectively. Furthermore, InP/Bi 2 WO 6 composites demonstrated high photocatalytic H 2 O 2 production efficiency when used in industrial wastewater and tap water. In addition, in-situ photocatalytic H 2 O 2 synthesis was applied to actual coking wastewater for lowering chemical oxygen demand (COD) levels, and the removal rate was more than 60%. Remarkably, the degradation efficiency of acid orange 7 using the 3InP/Bi 2 WO 6 sample reached 99.9%. To the best of our knowledge, no other research has reported the use of InP QDs for the photocatalytic in-situ synthesis of H 2 O 2 in real water. This study provides valuable insights for the development of InP-based photocatalysts.
研究领域:
材料科学
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环境科学
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化学工程
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DOI
高影响因子
MATERIALS & DESIGN
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2022
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IF 9.417
Yanbin Zhang,Lu-Lu Qiao,Zhi-Qiang Zhang,Yong-Fang Liu,Lin-Song Li,Huaibin Shen,Mei-Xia Zhao
Numerous cellular functions are closely reliant on mitochondria and so the capability to conduct long-term stable studies of their activity is of great importance. However, current commercial mitochondrial probes are severely limited in their ability to trace mitochondria due to their inherently poor stability. Here, for the first time, we designed a novel mitochondrial fluorescent probe using InP quantum dots (QDs) as a fluorescent master and skillfully combined with (3-carboxypropyl)triphenylphosphine (TPP) for specific recognition. The bespoke InP QDs probes described here exhibited clear advantages, including simple and low-cost synthesis, high quantum yields, extremely low toxicity, good biocompatibility, and excellent photochemical stability, thus representing a versatile, novel mitochondrial fluorescent probe, particularly suitable in applications traditionally undertaken by Cd-based QDs in biological fields.
研究领域:
细胞生物学
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生物医学工程
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材料科学
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DOI
高影响因子
OPTICAL MATERIALS
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2024
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IF 3.8
Jianpu Lin,Shengjie Zhang,Lingfeng Du,Baiquan Zhang,Xiongtu Zhou,Yongai Zhang,Chaoxing Wu
The wavelength tunable and environmentally friendly InP quantum dots are considered one of the most powerful alternatives to cadmium-based quantum dots, and the luminescent devices prepared with them also show great potential. There is still room for improvement in the synthesis methods and device applications of InP based quantum dots. In this work, we report one pot synthesis route for InP/ZnSe/ZnSeS/ZnS green QDs based on tris(dimethylamino)phosphine (DMP) phosphorus by using the strategy of multi shell coating and gradient heating to reduce surface defects of quantum dots. The shell structure, dosage, and growth temperature have all been taken into account in order to explore better performance of InP QDs. The synthesized green quantum dots have 86 % PLQY and a full width at half maximum of 36 nm. In addition, the synthesized green InP quantum dots are applied in AC QLED devices. The experimental results show that the luminescence intensity is affected by the driving voltage and frequency, which is similar to the working mode of non-carrier-injected emitting devices. And there is a matching value between the voltage and frequency.
研究领域:
材料科学
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纳米技术
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光电子学
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DOI
高影响因子
Journal of Materials Chemistry C
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2021
·Vol. 9
·期 30
·9599-9609
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IF 7.393
Cong Shen,Yanqing Zhu,Zixiao Li,Jingling Li,Hong Tao,Jianhua Zou,Xueqing Xu,Gang Xu
InP quantum dots (QDs) are considered as the most promising alternative to Cd-based QDs with lower toxicity, and emission spectrum tunability ranging from the visible to near-infrared region. Although high-quality fluorescent InP QDs have been successfully synthesized by several groups, the rigorous synthesis conditions hinder its practical use in display devices. In this work, for the first time, we introduce Zn2+ into the growth stage of the InP QDs to prepare an InP–In(Zn)P core, and then the as-grown InP–In(Zn)P cores were consecutively coated with typical double shells of inner ZnSe and outer ZnS. The final InP–In(Zn)P/ZnSe/ZnS core/shell/shell QDs exhibited a maximum photoluminescence (PL) quantum yield (QY) of 94.3% and have tunable emissions from yellow (569 nm) to red (630 nm), showing a potential application in display devices. Above all, compared with other related studies, the excellent PL properties were obtained in relatively milder conditions (ultimate vacuum level of 400 mTorr). The results of this study provide guidance for the commercial application of InP QDs as a viable alternative to Cd-based QDs.
研究领域:
材料科学
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光学
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DOI
高影响因子
ACS Omega
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2019
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IF 2.584
Wenda Zhang,Weidong Zhuang,Ronghui Liu,Xianran Xing,Xiangwei Qu,Haochen Liu,Bing Xu,Kai Wang,Xiao Wei Sun
Traditionally, ZnS or ZnSe is chosen as the shell material for InP quantum dots (QDs). However, for green or blue InP QDs, the ZnSe shell will form a type-II structure resulting in a redshift of the emission spectrum. Although the band gap of ZnS is wider, its lattice mismatch with InP is larger (∼7.7%), resulting in more defect states and lowered quantum yield (QY). To overcome the above problems, we introduced the intermediate ZnMnS layer in InP/ZnMnS/ZnS QDs. The wide band gap of the intermediate layer (3.7 eV) can confine the electrons and holes in the core completely, and the formation of the type-II structure is avoided. As a result, green InP-based QDs with QY up to 80% were obtained. By adjusting the halogen ratios of the ZnX2 precursor, the minimum and maximum emission peaks are 470 and 620 nm, respectively, covering the whole visible range. Finally, after optimizing the coating shell process, the maximum external quantum efficiency of QD light-emitting diodes fabricated from this InP-based green light QDs can reach 2.7%.
研究领域:
材料科学
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光电技术
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产品关联
DOI
PubMed
高影响因子
Advanced Optical Materials
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2024
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IF 8
Mengyuan Chen,Qian Li,Yangyang Bian,Shuaibing Wang,Binbin Hu,Aiwei Tang,Fei Chen,Yanbing Lv,Huaibin Shen
The external quantum efficiencies (EQE) and luminances of red InP-based and blue ZnTeSe-based quantum dot light-emitting diodes (QLEDs) have exceeded 20% and 80 000 cd m −2 , respectively, and the T 50 @100 cd m −2 (time for the luminance decreasing by 50%) operational lifetime of red InP-based QLEDs also have exceeded 1 000 000 h, nearing industrial application standards. However, the low EQE, luminance, and inferior lifetime of green InP-based QLEDs restrict the application for their full-color Cd-free display and lighting applications. The large electron injection barrier and severe exciton quenching caused by defect states of ZnMgO (ZMO) nanoparticles (NPs) lead to lower electron concentration in the emitting layer, which results in reduced radiative recombination. Here, with the surface passivation of MgCl 2 , the exciton quenching sites are significantly suppressed, and the electron injection barrier is reduced owing to the conduction band minimum (CBM) levels upshift of ZMO. As a result, a high EQE of 21.43%, maximum luminance of 25 5985 cd m −2 , along with a long T 50 @1000 cd m −2 (over 4 600 h) and T 50 @100 cd m −2 (over 290 000 h) operational lifetime is achieved for green InP-based QLEDs. These values have all exceeded the previous best values of green InP-based QLEDs.
研究领域:
材料科学
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光电技术
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DOI
高影响因子
ACS Applied Nano Materials
·
2023
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IF 5.9
Haobing Zhao,Hailong Hu,Jinping Zheng,Yuan Qie,Kuibao Yu,Yangbin Zhu,Zhiqi Luo,Lihua Lin,Kaiyu Yang,Tailiang Guo,Fushan Li
With tunable emission in the full visible region, the ecofriendly InP quantum dots (QDs) show unique application prospects in light-emitting devices. At present, InP QDs suffer from wide-bandwidth emission, especially for electroluminescence (EL), which hinders their applications in high-performance display devices. Here, we report a facile one-pot synthesis of narrow-bandwidth InP/ZnSeS/ZnS QDs using a safe phosphorus source of tris(dimethylamino)phosphine, in which the ZnSeS inner-shell layer is formed via temperature-gradient solution growth from 240 to 280 °C. The synthesized green QDs have a high photoluminescence quantum yield (PLQY) of 91% and full width at half-maximum (fwhm) of 36 nm. Moreover, the resultant quantum dot light-emitting devices (QLEDs) also show a narrow fwhm of 42 nm, which is the narrowest emission of green InP QLEDs based on a safe phosphorus source reported so far. Further modulation of the electron injection into the device by inserting a thin layer of lithium fluoride results in a peak external quantum efficiency of 5.56%.
研究领域:
材料科学
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光电子学
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产品关联
DOI
高影响因子
Small
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2022
·Vol. 18
·期 15
·2108120
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IF 15.153
Zhongjie Cui,Shiliang Mei,Zhuoqi Wen,Dan Yang,Shuaitao Qin,Zhiyong Xiong,Bobo Yang,Haiyang He,Rui Bao,Yi Qiu,Yuanyuan Chen,Wanlu Zhang,Fengxian Xie,Guichuan Xing,Ruiqian Guo
InP quantum dots (QDs) have attracted much attention owing to their nontoxic properties and shown great potential in optoelectronic applications. Due to the surface defects and lattice mismatch, the interfacial structure of InP/ZnS QDs plays a significant role in their performance. Herein, the formation of In–S and S x –In–P 1− x interlayers through anion exchange at the shell-growth stage is revealed. More importantly, it is proposed that the composition of interface is dependent on the synergistic effect of halogen ions and shelling temperature. High shelling temperature contributes to the optical performance improvement resulting from the formation of interlayers, besides the thicker ZnS shell. Moreover, the effect relates to the halogen ions where I − presents more obvious enhancement than Br − and Cl − , owing to their different ability to coordinate with In dangling bonds, which are inclined to form In–S and S x –In–P 1− x bonds. Further, the anion exchange under I − -rich environment causes a blue-shift of emission wavelength with shelling temperature increasing, unobserved in a Cl − - or Br − -rich environment. It contributes to the preparation of highly efficient blue emissive InP/ZnS QDs with emission wavelength of 473 nm, photoluminescence quantum yield of ≈50% and full width at half maximum of 47 nm.
研究领域:
材料科学
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光学
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产品关联
DOI
PubMed
高影响因子
ACS Applied Nano Materials
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2023
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IF 5.9
Zhongjie Cui,Shuaitao Qin,Haiyang He,Zhuoqi Wen,Dan Yang,Zhiyan Piao,Shiliang Mei,Wanlu Zhang,Ruiqian Guo
As a kind of luminescent nanomaterial, InP quantum dots (QDs) have been regarded as one of the most potential nontoxic alternatives for cadmium-based QDs in the light-emitting devices, and much progress has been obtained recently. However, their growth kinetics remains not fully revealed yet, and the effects of the shelling process on as-synthesized InP cores have been rarely investigated. Herein, the growth kinetics of InP QDs is investigated via the convenient method of varying halide ions, and their sequential growth is proposed according to the discontinuous evolution of their first exciton absorption peaks, especially the observed typical positions, which is different from the reported continuous evolution previously and means that the specific sized InP cores appeared during the growth stage. Moreover, the impacts of ZnS are analyzed from the quantum confinement effect of ZnS on InP cores with different sizes and interfacial heterovalent bonds. The coordination between these two aspects decides the final positions of the first exciton absorption peaks of InP/ZnS QDs. Compared with the positions of the first exciton absorption peaks of bare InP QDs, insufficient confinement of the ZnS shell to small InP cores causes the red-shift, but the heterovalent bonds at the interface cause the blue-shift. Furthermore, the emissions of final InP/ZnS QDs are influenced, and the emission from 484 to 578 nm is obtained via this facile synthetic protocol. It is thought that this study can reveal the growth of InP QDs and provide guidance to design rational InP-based QDs with desired emission and high performance, contributing to the fabrication of efficient light-emitting devices.
研究领域:
材料科学
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纳米技术
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光学
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DOI
高影响因子
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