RSC Advances
·
2016
·Vol. 6
·期 74
·70452-70459
·
IF 3.289
Makkawi Osman,Yanmin Huang,Wei Feng,Guangbo Liu,Yunfeng Qiu,PingAn Hu
Phase engineering of two-dimensional (2D) materials offers unique opportunities for acquiring novel opto-electronic properties and allows for the searching of outstanding candidates for applications in opto-electronic detectors, sensors, catalysis, or phase-change memory devices. Here, we report the phase-transformation from β-InSe to γ-In2Se3, exploiting the thermal annealing route to trigger the process starting at 200 °C that expands the family of phase-change materials. The presence of γ-In2Se3 is solidly confirmed by the characteristic peaks in X-ray diffraction (XRD) and energy dispersive X-ray (EDX), and is quite stable at ambient condition, thus facilitating substantial application in phase-change memory devices. A Raman shift in the A′1 mode from 225 cm−1 to 230 cm−1 further illustrates the phase transformation. Besides the photoluminescence (PL) peak of β-InSe, the ∼2 eV PL peak, ascribed to γ-In2Se3, is observed in the annealed nanosheet. The increased PL band gap of β-InSe as a function of annealing temperature during phase transformation was possibly affected by the suppressed interlayer coupling, as well as the planar quantum confinement of photo-excited carriers by the external surfaces of the sheets. The photodetector performance with respect to photocurrent, mobility, detectivity, responsivity, and external quantum efficiency was subsequently evaluated after thermal annealing, showing deteriorated optical performance. The present work proved that thermal annealing could induce the successful phase transformation, and adjusted the opto-electronic properties in some extent, providing useful information for processing 2D materials based nano-devices.
研究领域:
材料科学
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光学工程
·
纳米技术
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DOI
高影响因子
Journal of Materials Chemistry C
·
2019
·Vol. 8
·期 1
·132-138
·
IF 6.641
Rui Wang,Qing Wu,Xiantao Jiang,Taojian Fan,Jia Guo,Cong Wang,Feng Zhang,Yali Gao,Meng Zhang,Zhengqian Luo,Han Zhang
Two-dimensional (2D) InSe has recently attracted increasing attention due to its outstanding electrical transport property, excellent photo-response, and direct band gap characteristics. In this contribution, few-layer InSe was successfully fabricated via a facile liquid phase exfoliation (LPE) method. Compared with other 2D materials, the photothermal response measurements demonstrate that InSe has excellent photothermal conversion efficacy. A novel Vernier-cascaded photothermal fiber sensor with high sensitivity that takes advantage of the photothermal effect of few-layer InSe has been proposed and demonstrated for the first time. The experimental results have shown that the photothermal optical sensitivity and spectral shifts of the MZI (Mach–Zehnder interferometer)–MKR (microfiber knot ring) Vernier sensor and the Vernier part are 0.126 nm mW−1, 12.22 nm and 0.0047 nm mW−1, 0.49 nm, respectively. A maximum sensitivity amplification factor of ∼26.8 is realized. Our present work can provide more possibilities of 2D materials that can be utilized towards cascade sensors.
研究领域:
材料科学
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光学工程
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DOI
高影响因子
ACS Applied Materials & Interfaces
·
2019
·
IF 8.456
Chi Huang,Zhengbo Sun,Haodong Cui,Ting Pan,Shengyong Geng,Wenhua Zhou,Paul K. Chu,Xue-Feng Yu
Near-infrared-II (NIR-II) biowindow is appealing from the perspectives of larger maximum permissible exposure in comparison with the near-infrared-I biowindow, so the NIR-II-responsive drug-delivery nanoplatform is highly desirable. In this work, two-dimensional InSe nanosheets (InSe NSs) are modified with poly(ethylene glycol) and evaluated as an effective NIR-II-responsive cancer treatment nanoplatform. The InSe NSs synthesized by liquid exfoliation exhibit prominent NIR-II-responsive photothermal conversion efficiency (39.5%) and photothermal stability. Moreover, the InSe NSs have a doxorubicin (DOX) loading capacity as high as 93.6%, along with excellent NIR-II-responsive DOX release characteristic. The superior synergistic chemo/photothermal effects have also been demonstrated by the in vitro experiments in killing cancer cells. In combination with good biocompatibility, the InSe NSs have great potential in therapeutic applications.
研究领域:
生物医学工程
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纳米技术
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癌症治疗
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材料科学
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产品关联
DOI
PubMed
高影响因子
ANALYTICAL CHEMISTRY
·
2020
·
IF 6.785
Lu Zhang,Zhongjun Li,Jiang Liu,Zhengchun Peng,Jia Zhou,Han Zhang,Yingchun Li
Two-dimensional (2D) transition-metal/metal chalcogenides including MoS2, MoSe2, WS2, SnS2, etc. have shown considerable potential for the fabrication of gas sensors for NO2 detection. However, these sensors usually suffer from sluggish and incomplete recovery at room temperature, and their sensitivities are limited by presorbed O2. In this work, a novel optoelectronic gas sensor based on direct-bandgap InSe nanosheets was demonstrated. Because of the excellent photoelectric and sensing properties in few-layer InSe, detection of NO2 at room temperature was realized. Ultrahigh and reversible responses were obtained under ultraviolet (UV) light illumination, and the limit of detection (0.98 ppb) was ∼40 times lower than that observed without UV light. Furthermore, the effects of O2 and H2O molecules on sensor performance were fully studied through experiments and density functional theory. Some new mechanisms of NO2 detection in high relative humidity conditions under UV illumination were proposed, including regulation of proton transfer and induction of H2O2 reduction. In all, this work not only broadens the application field of 2D InSe, but also demonstrates the potential prospect of detecting ppb-level NO2 in complex circumstances such as human breath by using 2D material-based sensors with light activation.
研究领域:
材料科学
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环境科学
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化学
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DOI
高影响因子
Journal of Materials Chemistry C
·
2020
·Vol. 8
·期 20
·6701-6709
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IF 7.059
Shichao Zhang,Yunfeng Qiu,Huihui Yang,Dao Wang,Yunxia Hu,Xubing Lu,Zhonghua Li,PingAn Hu
In graphene-like 2D layered semiconductor-based field-effect transistors (FETs), the device performance is strongly influenced by a semiconductor–dielectric interface. In this study, it is demonstrated that a hybrid dielectric interface combines the advantages of high dielectric constant and inert polymer dielectric layer, and their synergistic effect induce the improvement of the InSe FET performance. A FET with a hybrid dielectric interface, composed of 200 nm PMMA and Hf0.5Zr0.5O2/Al2O3 (HZO/AlO), displays a mobility of 863 cm2 V−1 s−1, a relatively low sub-threshold swing of 462 mV dec−1, a diminutive hysteresis loop, an ultrahigh Ion–off ratio of ∼107, and low leakage current superior to the ones that use a conventional single dielectric layer. Experimental and theoretical results proved that the low density of charge trapping states and suppression of scattering effect at the semiconductor–dielectric interface synergistically result in enhanced device performances. The present study indicates that the smart combination of an inert polymer buffer layer and high-κ constant oxides is effective in optimizing the semiconductor–dielectric interface, and providing available interface engineering methods for other 2D materials.
研究领域:
材料科学
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半导体物理
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DOI
高影响因子
JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2020
·
IF 7.489
Miaomiao Yu,Feng Gao,Yunxia Hu,Lifeng Wang,PingAn Hu,Wei Feng
Multilayer indium selenide (InSe) is a good candidate for high performance electronic and optoelectronic devices. The electrical performance of InSe is effectively regulated by dielectric layers, contact electrodes and surface doping. However, as a powerful tool to tune properties of materials, alloy engineering is absent for multilayer InSe. In this letter, for the first time, we investigate the electrical property of InSe 1-x Te x alloys and optoelectronic property of InSe-InSe 0.82 Te 0.18 p-n heterojunction. The electrical transport properties of InSe 1-x Te x alloys strongly depend on the content of Te composition. With the ratio of Te/Se increasing, the n -type electron transport behavior of InSe gradually transfers to the p-type hole transport behavior of InSe 0.82 Te 0.18 . The p-n InSe-InSe 0.82 Te 0.18 heterojunction shows a rectification effect and a self-powered photodetection. The self-powered photodetector (SPPD) has a broad photodetection range from visible light (400 nm) to near-infrared (NIR) light (1000 nm). The responsivity ( R ) of SPPD is 14.1 mA/W under illuminated by NIR light (900 nm) at zero bias, which is comparable to some of the 2D heterojunctions NIR photodetectors measured with an external bias. The SPPD also shows a stable and fast response to NIR light (900 nm). This work demonstrates that the electrical transport properties of InSe 1-x Te x alloys significantly rely on the ratio of Te/Se and suggests that InSe-InSe 1-x Te x p-n heterojunction has a excellent potential for application in the self-powered optoelectronic device.
研究领域:
材料科学
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电子工程
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DOI
PubMed
高影响因子
MATERIALS RESEARCH BULLETIN
·
2024
·
IF 5.3
Asad Ali,Farhana Akbar Mangrio,Bingyan Qu,Amin ur Rashid,Syed Aamir Hussain,Lixin Zhu,Yuxian Shen,Lei Chen
The selenide-based Van der Waals heterojunctions show great potential for the next generation of photoelectronic nanodevices. Herein, we construct a 2D photoanode nanocatalyst that consists of ZnSe nanocrystals with exposed active surfaces coupled with few-layered InSe nanosheets decorated by Au nanoparticles. The resultant ZnSe/AuNPs@InSe multi-heterojunction photoanode demonstrates an outstanding photocurrent density of 4.86 mAcm −2 under AM 1.5 G simulated sunlight (100 mWcm −2 ), which is 8 times greater than that of the pristine InSe photoanode (0.61 mAcm −2 ). Moreover, the lifetime of photogenerated charge carriers is extended by a factor of 3. This significant enhancement in photoelectrochemical water splitting in the near-infrared region is attributed to the surface plasmonic effect produced by the modification of Au NPs when bulk InSe is exfoliated into multi-layered flakes. The interfacial coupling effects on carrier transfer dynamics, as revealed by impedance spectroscopy assisted with the First-Principal calculations, show that this photoanode significantly minimizes the internal resistance, boosts the charge carrier separation efficiency, and promotes water oxidation.
研究领域:
材料科学
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纳米技术
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能源科学
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DOI
高影响因子
ACS Nano
·
2020
·
IF 14.588
Qiaoyan Hao,Jidong Liu,Gang Wang,Jiewei Chen,Haibo Gan,Jiaqi Zhu,Yuxuan Ke,Yang Chai,Junhao Lin,Wenjing Zhang
Indium selenide (InSe) has become a research hotspot because of its favorable carrier mobility and thickness-tunable band gap, showing great application potential in high-performance optoelectronic devices. The trend of miniaturization in optoelectronics has forced the feature sizes of the electronic components to shrink accordingly. Therefore, atomically thin InSe crystals may play an important role in future optoelectronics. Given the instability and ultralow photoluminescent (PL) emission of mechanically exfoliated ultrathin InSe, synthesis of highly stable mono- and few-layer InSe nanosheets with high PL efficiency has become crucial. Herein, ultrathin InSe nanosheets were prepared via thermal annealing of electrochemically intercalated products from bulk InSe. The size and yield of the as-prepared nanosheets were up to ∼160 μm and ∼70%, respectively, and ∼80% of the nanosheets were less than five layer. Impressively, the as-prepared nanosheets showed greatly enhanced stability and PL emission because of surface modification by carbon species. Efficient photoresponsivity of 2 A/W was achieved in the as-prepared nanosheet-based devices. These nanosheets were further assembled into large-area thin films with photoresponsivity of 16 A/W and an average Hall mobility of about 5 cm2 V–1 s–1. Finally, one-dimensional (1D) InSe nanoscrolls with a length up to 90 μm were constructed by solvent-assisted self-assembly of the exfoliated nanosheets.
研究领域:
材料科学
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纳米技术
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光电
·
半导体物理
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DOI
高影响因子
International Journal of Applied Ceramic Technology
·
2026
·Vol. 23
·期 1
·e70146
·
IF 2.6
Kiran Shoukat,Muhammad Irfan,Saba Shoukat,Syed Imran Abbas Shah,Kareem Yusuf,Adeel Hussain Chughtai,Muhammad Fahad Ehsan
Simplifying water electrolysis systems and enhancing hydrogen production efficiency can be achieved by developing high-performance electrocatalysts. This paper presents the synthesis of nickel-doped indium selenide (Ni@InSe) on nickel foam (NF) through a hydrothermal reaction. The distinct three-dimensional structure of NF acts as the reaction skeleton, facilitating gas diffusion and electron conduction. Different physical and electrochemical techniques successfully characterize the synthesized materials. InSe carries 0.10043 s − 1 , while the doped material Ni@InSe carries 0.1308 s − 1 TOF values. The XRD results show that InSe and Ni@InSe exhibited crystal sizes of about 45 and 30 nm, respectively. InSe and Ni@InSe revealed an overpotential of 349 and 260 mV at 10 mA·cm −2 current density through a minor Tafel slope value of 70 and 35 mV·dec −1 , respectively, within 1.0 M KOH electrolyte. Doped material also exhibits excellent stability as well. These extraordinary results are owing to the extremely crystalline nature, several active sites, great electrical conductivity, and porosity of the synthesized material, which refers it to its use in different energy-related fields.
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高影响因子
ACS Photonics
·
2024
·
IF 6.5
Qinxue Yin,Xiao Xing,Qiaoyan Hao,Zeyu Zhang,Chunwei Wang,Xingyu Yue,Ziwei Li,Wenjing Zhang,Yuxin Leng,Juan Du
Valleytronics, focusing on the charge carriers occupying valleys (local energy extrema) of the energy bands in semiconductors, demonstrates an additional degree of freedom besides the spin and charge. Usually, the inequivalent valley “states” in transition metal disulfides (TMDs) could be manipulated by external magnetic fields by controlling the valley-polarized carriers in spin-coupled valleys. Here, we found that the valley polarization of the photocurrent in ε-InSe could be intrinsically manipulated without the external field by the all-optical contactless method. The transient circular photogalvanic effect (CPGE)-induced photocurrent revealed by terahertz emission could be reversed only by selected pumping carriers from vertically split valence bands into different Rashba valleys. The switchable Rashba valley polarization, i.e., the optical orienting valley degree of freedom, could be fulfilled by the synergetic effects between the momentum-dependent Zeeman-like field due to the emergent nonzero Berry curvature and the Rashba splitting. Our results suggest that the spontaneous symmetry breaking could degenerate the given valley in ε-InSe and give a new roadmap for the manipulation of the valley degree of freedom intrinsically.
研究领域:
物理学
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材料科学
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光电学
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半导体物理
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产品关联
DOI
高影响因子
Laser & Photonics Reviews
·
2022
·Vol. 16
·期 11
·2200338
·
IF 10.947
Jidong Liu,Qiaoyan Hao,Haibo Gan,Peng Li,Benxuan Li,Yudi Tu,Jingting Zhu,Dianyu Qi,Yang Chai,Wenjing Zhang,Fei Liu
Photodetectors based on two-dimensional (2D) van der Waals heterostructures (vdWHs) have demonstrated great potential in modern nanotechnologies across a wide range of applications. However, due to the severe interface recombination of the photogenerated electron–hole pairs and various absorption edges of constituent layers, they would suffer from low carrier collection efficiency, and the spectral response range of each constituent layer is indistinguishable. Herein, tellurium (Te) nanoflakes with broadband photoresponse are synthesized to construct type-I InSe/Te vdWHs photodetector, which exhibits an ultralow reverse dark current of 3 × 10 −14 A and an ultrahigh current rectification ratio of 10 8 . Moreover, considerable photovoltaic effect of the heterostructure device is observed under illumination, attaining a light on/off ratio of up to 10 5 , a high specific detectivity of 1.77 × 10 11 Jones, and a fast response time of 320 µs. Based on type-I band alignment, the Te layer can collect the photogenerated holes from the InSe layer to suppress the recombination of photogenerated carriers. More importantly, the spectral response of the InSe/Te heterostructure photodetector can be selectively modulated by the InSe layer. This work demonstrates that band alignment engineering of 2D vdWHs holds great potential for developing high-performance self-powered photodetectors.
研究领域:
材料科学
·
纳米技术
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DOI
高影响因子
Journal of Materiomics
·
2023
·Vol. 9
·期 4
·709-716
·
IF 9.4
Yupeng Ma,Haoran Huang,Yifei Liu,Heyang Chen,Xudong Bai,Kunpeng Zhao,Min Jin,Tian-Ran Wei,Xun Shi
Indium selenide (InSe) crystals are reported to show exceptional plasticity, a new property to two-dimensional van der Waals (2D vdW) semiconductors. However, the correlation between plasticity and specific prototypes is unclear, and the understanding of detailed plastic deformation mechanisms is inadequate. Here three prototypes of InSe are predicted to be plastically deformable by calculation, and the plasticity of polymorphic crystals is verified by experiment. Moreover, distinct nanoindentation behaviors are seen on the cleavage and cross-section surfaces. The modulus and hardness of InSe are the lowest ones among a large variety of materials. The plastic deformation is further perceived from chemical interactions during the slip process. Particularly for the cross-layer slip, the initial In-Se bonds break while new In-In and Se-Se bonds are newly formed, maintaining a decent interaction strength. The remarkable plasticity and softness alongside the novel physical properties, endow InSe great promise for application in deformable and flexible electronics.
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高影响因子
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