Combustion Synthesized Electrospun InZnO Nanowires for Ultraviolet Photodetectors
Ultraviolet (UV) photodetectors play an important role in numerous commercial and scientific applications. The UV photodetectors based on binary-cation indium zinc oxide (InZnO) thin films exhibit great performance enhancement, compared with their single-cation counterparts. However, UV photodetectors based on 1D InZnO nanowires could potentially exhibit more superior optoelectrical performance, due to the large surface-to-volume ratio and favorable carrier transport characteristics of nanowires. This work has combined combustion synthesis with electrospinning technique to efficiently fabricate InZnO nanowire-based UV photodetectors. At the annealing temperature of 375 °C, the newly designed InZnO nanowire photodetectors exhibit excellent photoelectric performance under the irradiation of 310 nm UV light, including a photo-to-dark current ratio of 1.2 × 10 4 , a photo responsivity of 2.8 × 10 3 A W –1 , and a high detectivity of 2.4 × 10 16 Jones. This study not only demonstrates the opportunity to construct new-generation transparent electronics based on 1D metal oxide nanowires but also sheds new light on how to further decrease the annealing temperature of metal oxide nanowire devices for low-temperature fabrication processes.
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