Study of Construction and Performance on Photoelectric Devices of Cs–Pb–Br Perovskite Quantum Dot
White LEDs were encapsulated using Cs4PbBr6quantum dots and Gd2O3:Eu red phosphor as lamp powder. Under the excitation of a GaN chip, the color coordinates of the W-LED were (0.33, 0.34), and the color temperature was 5752 K, which is close to the color coordinate and color temperature range of standard sunlight. The electric current stability was excellent with an increase in the electric current, voltage, and luminescence intensity of the quantum dots and phosphors by more than 10 times. However, the stability of the quantum dots was slightly insufficient over long working periods. The photocatalytic devices were constructed using TiO2, CsPbBr3, and NiO as an electron transport layer, light absorption layer, and catalyst, respectively. The Cs–Pb–Br-based perovskite quantum dot photocatalytic devices were constructed using a two-step spin coating method, one-step spin coating method, and full PLD technology. In order to improve the water stability of the device, a hydrophobic carbon paste and carbon film were selected as the hole transport layer. The TiO2layer and perovskite layer with different thicknesses and film forming qualities were obtained by changing the spin coating speed. The influence of the spin coating speed on the device’s performance was explored through SEM and a J–V curve to find the best spin coating process. The device constructed by the two-step spin coating method had a higher current density but no obvious increase in the current density under light, while the other two methods could obtain a more obvious light response, but the current density was very low.
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