Carrier-Modulated Anomalous Electron Transport in Electrolyte-Gated SrTiO3
The anomalous transport phenomena and underlying mechanism of SrTiO 3 have been long term concerned, including the Kondo physics and anomalous Hall effects to be discussed herein. Nevertheless, a clarification of the physical origins for these phenomena and their intertransitions upon varying carrier density remain to be an issue, due to the limited modulation of carrier density. Herein, the intriguing transport behaviors of electrolyte-gated SrTiO 3 in the field-effect transistor geometry are investigated, which allows a relatively wide carrier density window. It is revealed that the remarkable Kondo-like resistance upturn, identified at relatively low carrier density, becomes gradually disappeared and replaced by the emerging nonlinear Hall resistance with increasing gating voltage, indicating the interesting gating-controlled transport behaviors. The detailed discussions on the underlying physics suggest that the gating-controlled transport can be well described by the multiband transport model taking into account magnetic scattering in the channel layer, a comprehensive scenario for the emergent transport effects in carrier-doped SrTiO 3 . The present work provides a promising platform for exploring novel quantum materials phenomena in SrTiO 3 and analogous systems.
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