Gang Chen,Xiao Dong Peng,Chun Lin Deng,Chun Lin Fu,Wei Cai,Chun Yan Deng,Xiao Shuang Li
The La2Ti2O7+xwt%ZnO(x=0, 0.05, 0.1, 0.2, 0.3, 0.4, 0.5) ceramics were prepared by the conventional solid state reaction method, and effects of ZnO doped on the structure, dielectric and ferroelectric properties were investigated in detail. The X-ray diffraction patterns of La2Ti2O7 ceramics doped by ZnO oxide showed that no second phase exists. The surface morphology is palte-like shape, the grains of La2Ti2O7 ceramics increase with increasing the content of ZnO, and the result is to improve the density of La2Ti2O7 ceramics. The dielectric constant and loss decreases with increasing frequency.When the content of ZnO is more than 0.05wt%, the dielectric constant and loss decreases with the amount of addition of ZnO oxide increasing. The ferroelectric hysteresis loop is not saturable, which is attributed to its large leakage current. The ferroelectric properties improve with the addition of ZnO oxide. .
The study conducts an in-depth analysis of the role of the crystal phase and particle size of TiO 2 in the preparation of La 2 Ti 2 O 7 (LTO) ceramics via the conventional solid-state method. Comparative studies on crystal structure, micromorphology, electrical properties and mechanical properties were performed, revealing that the selection of TiO 2 raw materials greatly influences the structure and performance of LTO ceramics, resulting in significant differences in the grain sizes, electrical properties, and mechanical properties of the ceramics. Among the various TiO 2 sources, the LTO ceramics synthesized with nano-rutile TiO 2 exhibit superior overall performance. The smaller grain size of 1.43 nm for the ceramic and higher relative density of 98.27 %, significantly enhance their electrical and mechanical properties. The piezoelectric constant is 1.5 pC/N at room temperature and 1.4 pC/N after annealing at 1000 °C for 48 h. The high Curie temperature with 1450 °C, high resistivity with 3.93 × 10 6 Ω cm at 600 °C, high hardness of 9.89 GPa and small change in elastic modulus make it excellent candidates for high-temperature electronic component applications.
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