MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
·
2021
·
IF 3.927
Heng Wang,Ruihua Nan,Zengyun Jian,Changqing Jin,Yongxing Wei,Yaping Bai,Hulin Li
MAPbBr 3 perovskite crystals have attracted significant attention due to their outstanding performance in various optoelectronic applications . However, further understanding for the growth mechanism of MAPbBr 3 and its temperature-dependent variations of MA + should be addressed. In this study, MAPbBr 3 single crystal was grown using the inverse temperature crystallization method with a crystallization temperature of approximately 60 °C. Optical microscopy and atomic force microscopy were used to illustrate the surface structure of the resultant MAPbBr 3 . The results show that there is a layered growth mode with concave grooves and 2D nuclei on its surface. In situ variable-temperature Raman measurements were performed on the MAPbBr 3 crystal at a temperature range of 80–300 K. The narrowing of Raman bands unrelated to the phase transition of the crystal was observed around 100 K. By combining the variable-temperature X-ray diffractometry results from 80 to 105 K, the reason can be attributed to the lattice distortion and vibration within the crystals.
研究领域:
材料科学
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光学
·
晶体学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE
·
2019
·Vol. 54
·期 17
·11596-11603
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IF 3.442
Shen Hongxia,Nan Ruihua,Jian Zengyun,Li Xiaojuan
Perovskite MAPbBr 3 (MA = CH 3 NH 3 + ) single crystals were grown via the anti-solvent vapor-assisted crystallization method. The crystal growth process was optimized by adjusting the solution concentration and diluting the anti-solvent. The maximum size of the obtained crystal was 9 × 9 × 3 mm 3 . It shows that the MAPbBr 3 single crystal is a cubic structure, the space group is Pm \( \bar{3} \) m , and the lattice constant is 0.59062 nm. Furthermore, its energy band gap is approximately 2.23 eV. The atomic force microscopy results demonstrated that the growth process of MAPbBr 3 single crystal followed the defect step growth mechanism, which was controlled by the screw dislocations within the crystal. Based on the curling growth of a screw dislocation on the crystal surface, a spiral step was formed. After the step was rotated around the entire mesa, a higher step was generated. Repeatedly, the step growth of screw dislocation within the crystal came into being. Besides, some small pits were also observed on (100) plane of the MAPbBr 3 crystal. These pits hindered the movement of steps and affected the lattice arrangement around them, causing the structural mismatch and more defects within the crystals.
研究领域:
材料科学
·
晶体学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2024
·Vol. 12
·期 21
·12467-12474
·
IF 10.7
Dong Liu,Xue Sun,Li Jiang,Xianyuan Jiang,Hao Chen,Fucai Cui,Guodong Zhang,Yong Wang,Ying-Bo Lu,Zhongchen Wu,Zhijun Ning,Xutang Tao
High-quality semiconductor single crystal materials play a significant role in achieving excellent photoelectric performance, fundamental to high-performance X-ray detectors. To mitigate the impact of temperature gradients and auxiliary substances, we developed a vacuum evaporation crystallization method. This method synthesizes high-quality MAPbBr3 single crystals with outstanding photoelectric properties, including a long carrier lifetime (1150 ns), low trap-state density (2.28 × 109 cm−3), and high carrier mobility (130 cm2 V−1 s−1). A planar MAPbBr3/Pt structure for an X-ray detector was designed and constructed, demonstrating a superior detection sensitivity of 24 552 μC Gy−1 cm−2 and an ultralow detection limit of 54 nGy s−1. Furthermore, even after being stored in ambient air at room temperature for 200 days, the unencapsulated detector retained 97.1% of its original photocurrent response under a dose rate of 21.09 μGy s−1. These results indicate that high-quality MAPbBr3 single crystals are promising candidates for high-performance X-ray detectors.
研究领域:
材料科学
·
半导体物理
·
辐射探测技术
✓ 已验证
DOI
高影响因子
Materials Today Physics
·
2020
·
IF 10.443
J. Xing,Y. Zou,C. Zhao,Z. Yu,Y. Shan,W. Kong,X. Zheng,X. Li,W. Yu,C. Guo
Carrier transfer is a key process for perovskite-based photoelectric conversion. It has a close relationship with grain boundaries, grain size , and contact layers. Understanding this relationship is of great significance for revealing the inherent characteristics of perovskite materials and for devices optimization. However, the dependence of carrier transfer characteristics (including carrier lifetime and mobility) on thickness is less studied, although which is a key issue for almost all perovskite material devices. Here we find that as the thickness of MAPbBr 3 perovskite single crystal (PSC) increases from 1.47 μm to 10.55 μm, the carrier lifetime of MAPbBr 3 decreases from 70 ns to 30 ns, and the carrier mobility decreases from 97 cm 2 V −1 s −1 to 57 cm 2 V −1 s −1 , but they become constant in very thick samples. In addition, it was found that as the crystal thickness increased from 1.47 μm to 10.55 μm, the surface layer range gradually increased from 12 nm to 31 nm. The surface recombination velocity and surface defect (trap) density further confirmed that the thin PSC exhibited a small surface layer range. Finally, a three-layer carrier transmission model of PSC is proposed. This research provides guidance for the optimal design of PSC optoelectronic devices.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
高影响因子
Journal of Physical Chemistry Letters
·
2025
·
IF 4.6
Nan Li,Shuaishuai Yu,Yuliang Yi,Haipeng Di,Yehao Deng,Jingjing Zhao
Perovskite single crystals have been found to exhibit excellent X-ray detection and imaging performance. High-purity raw materials have generally been considered a prerequisite to guarantee crystal quality and device performance, which may lead to higher costs. However, we found that higher quality MAPbBr3 single crystals can be obtained from low-purity lead bromide (PbBr2). This is attributed to the presence of impurity lead carbonate (PbCO3) in the raw material. PbCO3 facilitates the suppression of crystal defects, leading to higher quality crystals. With the addition of a small amount of PbCO3 to high-purity PbBr2 raw material, MAPbBr3 single crystals grow with a smoother surface, improved uniformity, and lower defect concentrations. The single crystal becomes more intrinsic. The product of carrier mobility and lifetime increases to 1.3 × 10–2 cm2 V–1. With the addition of PbCO3, the detector sensitivity is about twice as high and the lowest detection limit is approximately 300 times lower, down to 20 nGyair/s. This work reveals the key factors for preparing high-quality perovskite single crystals using low-cost, low-purity raw materials, providing a new approach for producing high-yield perovskite single crystals.
研究领域:
材料科学
·
半导体物理
·
晶体生长
·
辐射探测
·
功能材料
·
光电子学
·
缺陷工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）