Synthesis and microwave dielectric properties of B2O3-doped Mg2GeO4 ceramics
Orthorhombic Mg 2 GeO 4 ceramics were synthesized by solid-state reaction method. When stoichiometric compositions were employed, the phase transition produced under low temperature and pure orthorhombic Mg 2 GeO 4 phase appeared at 1000 °C. B 2 O 3 was employed as sintering aid to lower the sintering temperature of Mg 2 GeO 4 ceramics and improve their relative densities. The B 2 O 3 -doped Mg 2 GeO 4 ceramics have a low sintering temperature of 1250 °C and a small negative τ f value. Microwave dielectric properties of B 2 O 3 -doped Mg 2 GeO 4 ceramics were: ε r = 6.76, Q × f = 95,000 GHz and τ f = −28.7 ppm/°C. They could be considered as promising candidate materials for microwave/millimeter-wave devices.
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