Effects of Bi2O3–CuO addition on the dielectric properties of MgO–TiO2(w) ceramics sintered at low temperatures
Herein, MgO–12 % TiO 2 (w) ceramics with different contents of Bi 2 O 3 –CuO sintering aid were prepared using a solid-state method. The effects of the sintering aid content on the sintering temperature and the dielectric and mechanical properties of the ceramics were studied. The material was characterized using scanning electron microscopy and X-ray diffraction and Precision LCR tester and universal testing machine and Archimedes drainage method. When the Bi 2 O 3 –CuO content was less than 9 wt%, the ceramic sample has higher dielectric properties. When the Bi 2 O 3 –CuO content was greater than 9 wt%, the dielectric properties will deteriorate. This is because Bi 2 O 3 participates in the chemical reaction between MgO and TiO 2 , forming a high dielectric loss Bi 4 Ti 3 O 7 phase. At high temperatures, Cu 2+ can easily change valence to Cu + , promoting oxygen vacancies and increasing dielectric loss in ceramic samples. The introduction of Bi 2 O 3 –CuO produces new MgTiO 3 , Mg 2 TiO 4 , and Bi 4 Ti 3 O 12 phases in the sample structure, resulting in a structure in which the MgO grains in the sample are surrounded by the new phases that appear around them. This structure fills the pores, increases density, enhances mechanical properties. The dielectric properties of the ceramics were the when the sintering temperature was 1050 °C, and the Bi 2 O 3 –CuO content was 3 wt%. The dielectric constant and dielectric loss were 11.19 and 1.17 × 10 −4 , respectively. The bending strength of the ceramic sample increased from 138.72 MPa to 179.64 MPa when the Bi 2 O 3 –CuO content was increased from 3 wt% to 15 wt%. The Bi 2 O 3 –CuO sintering aid enables MgO to be better applied in ceramic substrates.
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