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Micro-LEDs
Journal of Materials Chemistry C · 2023 ·Vol. 11 ·期 27 ·9281-9290 · IF 6.4

Mn2+-doped organic–inorganic hybrids (C8H20N)2Zn1−xMnxBr4 as sub-micrometer green phosphors for Mini-LEDs/Micro-LEDs

Sixiang Wang,Yichang Wang,DaeHo Yoon,Tianrong Li,Yuhua Wang

Green light conversion materials with small particle sizes and high luminous quality are essential for high-resolution display technology, such as Mini-LEDs and Micro-LEDs. Here, we demonstrate an effective strategy to prepare a sub-micrometer green phosphor via doping Mn2+ in a small-sized organic–inorganic hybrid Zn(II) bromide (C8H20N)2ZnBr4. Among a series of prepared (C8H20N)2Zn1−xMnxBr4 (x = 0–1.0), (C8H20N)2Zn0.7Mn0.3Br4 showed a particle size of around 700 nm, an emission peak centered at 517 nm with a full width at half maximum of 47 nm, a photoluminescence quantum yield of about 80%, and a stabilized photoluminescence intensity with a slight increase under continuous UV-light illumination over a 30 day test range. A [MnBr4]2− tetrahedron was effectively split by a massive tetraethylammonium cation (C8H20N)+ and [ZnBr4]2− tetrahedron unit in the zero-dimension structure, which was considered responsible for reducing the electron–phonon coupling of Mn2+, accelerating the leap process of [MnBr4]2−, and enhancing the optical and thermal stability of emitting centers. These results indicated that (C8H20N)2Zn0.7Mn0.3Br4 is a valuable candidate for Mini-LEDs and Micro-LEDs.

研究领域: 材料科学 · 光电技术 · 显示技术
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Micromachines · 2023 ·Vol. 14 ·期 3 ·566 · IF 3.4

Investigations of Sidewall Passivation Using the Sol-Gel Method on the Optoelectronic Performance for Blue InGaN Micro-LEDs

Wenjun Huang,Xiangyu Miao,Zhaojun Liu

The optoelectronic effects of sidewall passivation on micro-light-emitting diodes (Micro-LEDs) were investigated using sol-gel chemical synthesis. Blue InGaN/GaN multi-quantum well (MQW) Micro-LEDs, ranging in size from 20 × 20 μm to 100 × 100 μm and with high EQE, were fabricated and distinguished by the passivation method used, including no passivation, sol-gel SiO2, and plasma-enhanced chemical vapor deposition (PECVD) SiO2. Impressively, the sol-gel method is advantageous in improving the optoelectronic performance of Micro-LEDs. The fabricated 20 × 20 μm Micro-LEDs showed an EQE of 27.7% with sol-gel passivation, which was a 14% improvement compared to devices without sidewall passivation. Sol-gel sidewall passivation allows Micro-LEDs to effectively achieve sharper edge emission, superior surface luminous uniformity, and intensity, providing the possibility for the fabrication of low-cost and high-efficiency Micro-LEDs.Keywords:sidewall passivation;sol-gel SiO2;GaN-based micro-light-emitting diodes (Micro-LEDs)

研究领域: 材料科学 · 光电子学 · 半导体器件
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ADVANCED MATERIALS · 2025 · IF 26.8

Quantum Dot Luminescence Microspheres Enable Ultra-Efficient and Bright Micro-LEDs

Ting Gong,Tongtong Xuan,Wenhao Bai,Haorui Dong,Kai Huang,Rong-Jun Xie

Quantum dot (QD)-converted micrometer-scale light-emitting diodes (micro-LEDs) are regarded as an effective solution for achieving high-performance full-color micro-LED displays because of their narrow-band emission, simplified mass transfer, facile drive circuits, and low cost. However, these micro-LEDs suffer from significant blue light leakage and unsatisfactory electroluminescence properties due to the poor light conversion efficiency and stability of the QDs. Herein, the construction of green and red QD luminescence microspheres with the simultaneously high conversion efficiency of blue light and strong photoluminescence stability are proposed. These luminescence microspheres exhibit high external photoluminescence quantum yields exceeding 46% under 450 nm excitation, along with excellent reliability against blue light, heat, and water-oxygen degradation, owing to the waveguide and spatial confinement effects of the microspheres. The microsphere-based green and red micro-LEDs achieve world-record external quantum efficiencies of 40.8% and 22.1%, respectively, and high brightness values of 1.7 × 10 8 and 7.6 × 10 7 cd m −2 , respectively. Finally, 0.6 inch red, green, and blue monochrome micro-LED displays are demonstrated by integrating microsphere-converted micro-LED arrays with thin-film transistor backplanes, which show a pixel resolution as high as 1700 PPI and brightness exceeding 10 000 cd m −2 .

CAS / MDL: 57-09-0
研究领域: 材料科学 · 光电技术 · 显示技术
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Journal of Materials Chemistry C · 2026 · IF 5.1

Instantaneous Aqueous Spray Synthesis of Halide-Encapsulated CsPb(Cl/Br) 3 Quantum Dots for Stable Green to Pure-Blue Mini/Micro-LEDs

Hai Ou,Xin An,Peng Li,Weikang Dong,Keke Guan,Jiaxin Qin,Yuanting Wu

CsPbX 3 (X = I, Br, Cl) perovskite quantum dots (QDs) have shown great potential in optoelectronic devices due to their wide tunable bandgap, high photoluminescence quantum yield, and narrow emission spectra. Currently, methods for regulating blue light emission through component engineering or dimensional engineering suffer from issues such as halogen phase separation and increased defects, making it difficult to meet the strict requirements of display technology for pure blue light (CIE y < 0.15). Additionally, traditional synthesis processes are complex and have poor compatibility with Micro-LED miniaturization technology, which restricts their industrial application. Therefore, this study proposes an efficient and green spray drying method. By dissolving the perovskite precursors and halide salts in an aqueous solution, CsPb(Cl/Br) 3 QDs can be rapidly (<10 s) synthesized without organic solvents, and continuous tuning from green to blue light is achieved. This method effectively suppresses surface defects and phase separation through Cl element encapsulation, significantly enhancing stability.Moreover, its excellent processability supports spraying and film formation on any substrate, enabling the direct preparation of highly uniform Mini/Micro-LED pixel units. This technology provides a new approach for large-scale, low-cost manufacturing of perovskite QDs and is expected to accelerate the commercialization process of next-generation display technologies.

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