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MnBi2Te4
NANO LETTERS · 2022 · IF 12.262

Evolution of the Electronic Structure of Ultrathin MnBi2Te4 Films

Runzhe Xu,Yunhe Bai,Jingsong Zhou,Jiaheng Li,Xu Gu,Na Qin,Zhongxu Yin,Xian Du,Qinqin Zhang,Wenxuan Zhao,Yidian Li,Yang Wu,Cui Ding,Lili Wang,Aiji Liang,Zhongkai Liu,Yong Xu,Xiao Feng,Ke He,Yulin Chen,Lexian Yang

Ultrathin films of intrinsic magnetic topological insulator MnBi2Te4 exhibit fascinating quantum properties such as the quantum anomalous Hall effect and the axion insulator state. In this work, we systematically investigate the evolution of the electronic structure of MnBi2Te4 thin films. With increasing film thickness, the electronic structure changes from an insulator type with a large energy gap to one with in-gap topological surface states, which is, however, still in drastic contrast to the bulk material. By surface doping of alkali-metal atoms, a Rashba split band gradually emerges and hybridizes with topological surface states, which not only reconciles the puzzling difference between the electronic structures of the bulk and thin-film MnBi2Te4 but also provides an interesting platform to establish Rashba ferromagnet that is attractive for (quantum) anomalous Hall effect. Our results provide important insights into the understanding and engineering of the intriguing quantum properties of MnBi2Te4 thin films.

研究领域: 凝聚态物理 · 材料科学 · 量子物理 · 纳米技术
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INORGANIC CHEMISTRY COMMUNICATIONS · 2025 · IF 5.4

Investigation of field-controlled magnetocaloric switching effect in single crystal antiferromagnetic MnBi2Te4

Qingwang Bai,Mingxiang Xu

Being the first intrinsic antiferromagnetic (AFM) topological insulator (TI), MnBi 2 Te 4 , has garnered significant attention as an ideal platform for realizing diverse exotic topological quantum states. However, little is known about the magnetocaloric properties of MnBi 2 Te 4 to date. In this work, we report the magnetocaloric effect, rotating magnetocaloric effect, and magnetocaloric switching effect of single-crystal MnBi 2 Te 4 . Under 0–9 T, the maximum magnetic entropy changes (−ΔS M ) obtained are 2.5 J kg −1 K −1 and 2.1J kg −1 K −1 , when H∥c and H∥ab, respectively. Furthermore, the anisotropy in the −ΔS M between the two crystallographic orientations gives MnBi 2 Te 4 single crystals a rotational magnetocaloric effect. The sample exhibits a rotating entropy change of 0.4J kg −1 K −1 under a magnetic field of 9 T as the magnetic field is rotated from the ab plane to the c axis. More importantly, MnBi 2 Te 4 exhibits a coexistence of conventional and inverse magnetocaloric effects by switching between them at a specific temperature and magnetic field, that is, the magnetocaloric switching effect. Moreover, the switching temperature of MnBi 2 Te 4 can be modulated by changing the magnetic field, so that it is suitable for various constant-temperature baths. This study provides a meaningful clue for the design and exploration of high performance MCE-based constant-temperature devices.

CAS / MDL: 1304-82-1 12032-88-1
研究领域: 凝聚态物理 · 拓扑材料 · 磁热学 · 量子材料
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Journal of Superconductivity and Novel Magnetism · 2021 ·Vol. 34 ·期 5 ·1485-1493 · IF 1.506

The Layer-Inserting Growth of Antiferromagnetic Topological Insulator MnBi2Te4 Based on Symmetry and Its X-ray Photoelectron Spectroscopy

Jiao Fei,Wang Jingfeng,Wang Xianyu,Tian Qingyin,Chang Meixia,Cai Lingbo,Zhu Shu,Zhang Di,Lu Qing,Wang Cao,Tan Shugang,Li Yunlong,Jing Qiang,Liu Bo,Qian Dong

The antiferromagnetic topological insulator has attracted lots of attention recently, as its intrinsic magnetism and topological property make it a potential material to realize the quantum anomalous Hall effect at relative high temperature. Until now, only MnBi 2 Te 4 is predicted and grown successfully. The other MB 2 T 4 -family materials predicted (MB 2 T 4 : M = transition metal or rare earth element, B = Bi or Sb, T = Te, Se, or S) with not only antiferromagnetic topological property but also rich and exotic topological quantum states and dynamically stable (or metastable) structure have not been realized on experiment completely. Here, MnBi 2 Te 4 single crystals have been grown successfully by us. It shows typical antiferromagnetic character with Neel temperature of 24.5 K and a spin-flop transition at H ≈ 35,000 Oe, 1.8 K. In order to obtain the other members of MB 2 T 4 -family materials, it is necessary to understand the growth mode of MnBi 2 Te 4 . Its growth mode may be the layer-inserting growth mode based on symmetry, which is supported by our X-ray photoelectron spectroscopy (XPS) result, as the intrinsic chemical states of Mn and Te of MnBi 2 Te 4 are the same with those of inserting material α -MnTe. Understanding the growth mode of MnBi 2 Te 4 can help us to grow the other members of MB 2 T 4 -family materials.

研究领域: 材料科学 · 凝聚态物理
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NANO LETTERS · 2020 · IF 11.238

Electronic States and Magnetic Response of MnBi2Te4 by Scanning Tunneling Microscopy and Spectroscopy

Yonghao Yuan,Xintong Wang,Hao Li,Jiaheng Li,Yu Ji,Zhenqi Hao,Yang Wu,Ke He,Yayu Wang,Yong Xu,Wenhui Duan,Wei Li,Qi-Kun Xue

Exotic quantum phenomena have been demonstrated in recently discovered intrinsic magnetic topological insulator MnBi2Te4. At its two-dimensional limit, the quantum anomalous Hall effect and axion insulator state were observed in odd and even layers of MnBi2Te4, respectively. Here, we employ low-temperature scanning tunneling microscopy to study the electronic properties of MnBi2Te4. The quasiparticle interference patterns indicate that the electronic structures on the topmost layer of MnBi2Te4 are different from those of the expected out-of-plane A-type antiferromagnetic phase. The topological surface states may be embedded in deeper layers beneath the topmost surface. Such novel electronic structure is presumably related to the modification of crystalline structure during sample cleaving and reorientation of the magnetic moment of Mn atoms near the surface. Mn dopants substituted at the Bi site on the second atomic layer are observed. The electronic structures fluctuate at atomic scale on the surface, which can affect the magnetism of MnBi2Te4.

研究领域: 凝聚态物理 · 材料科学 · 量子物理 · 表面科学 · 纳米技术
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PHYSICAL CHEMISTRY CHEMICAL PHYSICS · 2019 ·Vol. 22 ·期 2 ·556-563 · IF 3.567

Antiferromagnetic topological insulator MnBi2Te4: synthesis and magnetic properties

Hao Li,Shengsheng Liu,Chang Liu,Jinsong Zhang,Yong Xu,Rong Yu,Yang Wu,Yuegang Zhang,Shoushan Fan

Recently, MnBi2Te4 has been discovered as the first intrinsic antiferromagnetic topological insulator (AFM TI), and it will become a promising material to discover exotic topological quantum phenomena. In this work, we have realized the successful synthesis of high-quality MnBi2Te4 single crystals by solid-state reactions. The as-grown MnBi2Te4 single crystal exhibits a van der Waals layered structure, which is composed of septuple Te–Bi–Te–Mn–Te–Bi–Te sequences as determined by X-ray diffraction and high-resolution high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). The magnetic order below 25 K as a consequence of A-type antiferromagnetic interaction between Mn layers in the MnBi2Te4 crystal suggests the unique interplay between antiferromagnetism and topological quantum states. Moreover, the transport measurements of MnBi2Te4 single crystals further confirm its magnetic transition. This study on the first AFM TI of MnBi2Te4 will guide the future research on other potential candidates in the MBixTey family (M = Ni, V, Ti, etc.).

研究领域: 材料科学 · 凝聚态物理
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JOURNAL OF SOLID STATE CHEMISTRY · 2025 · IF 3.5

Crystal growth and magnetic evolution of antiferromagnetic topological insulator Zn-doped MnBi2Te4

Zhenduo Fan,Haohang Xu,Jinggeng Zhao,Yaohui Zhang,Xianjie Wang,Yu Sui,Zhe Lv,Jian Liu,Sida Jiang,Zhiguo Liu

As the first intrinsic magnetic topological insulator , MnBi 2 Te 4 has provided a material platform for the realization of various novel physical phenomena arising from the interaction between magnetism and band topology. Here, transition element Zn - doped MnBi 2 Te 4 crystals of millimeter size, synthesized by using self-flux method, are reported. With increasing Zn content, the hexagonal lattice shrinks, and the Raman frequencies show a red shift. All samples undergo a transition from A - type antiferromagnetic (A - AFM) to canted antiferromagnetic (CAFM) to ferromagnetic (FM) under magnetic field . The antiferromagnetic ordering temperature slightly increases from 24.2 K for MnBi 2 Te 4 to 25.2 K for Mn 0.75 Zn 0.25 Bi 2 Te 4 . The transition field from AFM to CAFM decreases from 3.4 T for x  = 0–3.07 T for x  = 0.25. Isothermal magnetization data suggest that the single - ion anisotropy of Mn 2+ decrease and the interlayer magnetic interaction increase slightly due to the diluted magnetic ions and unit cell shrinkage. Samples Mn 0.9 Zn 0.1 Bi 2 Te 4 and Mn 0.8 Zn 0.2 Bi 2 Te 4 show metallic conduction with a cusplike anomaly at around T N  ≈ 24 K, corresponding to a long - range antiferromagnetic (AFM) transition. The increase of T N and decrease of transition field ( H c S F ) upon Zn doping, make it possible to manipulate magnetic and electrical properties in topological insulators by non - magnetic element substitution, which is of great significance for further application in quantum information storage and spintronics .

CAS / MDL: 13494-80-9 7439-96-5
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JOURNAL OF CRYSTAL GROWTH · 2021 · IF 1.797

Study of the effect of Mn:Bi ratio in the growth of MnBi2Te4 bulk crystals

H.J. Liu,J. Zhang,K. Zhao,X.S. Yang,Y. Zhao

The antiferromagnetic topological insulator MnBi 2 Te 4 has drawn great interest in recent years. However, techniques for the growth of sizeable single crystals still need to be improved. Mn:Bi ratio or MnTe:Bi 2 Te 3 ratio in the starting material is an important factor that affects the outcome of synthesis. We employed a relatively simple self-flux method that uses the three elements directly and involves only one sintering procedure. We systematically studied the crystals obtained with different Mn:Bi ratio, from 1:2 (the stoichiometric ratio) to 1:20. Structural characterization shows the shift in the chemical compositions, from entirely MnBi 2 Te 4 septuple-atomic layers, to the MnBi 4 Te 7 structure and finally to Mn-doped Bi 2 Te 3 . Hybrid crystals with multiple types of structures are found among them. The relation between the results and the starting material ratios is summarized, and can provide useful reference for the crystal growth and future researches in this area.

研究领域: 凝聚态物理 · 材料科学 · 拓扑绝缘体 · 晶体生长
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Journal of Superconductivity and Novel Magnetism · 2022 ·Vol. 35 ·期 5 ·1221-1228 · IF 1.675

The Synthesis of MnBi2Te4 Antiferromagnetic Topological Insulator Single Crystals Through a One-Step Growth Method

Yu S.,Zhao K.,Yang X. S.,Zhao Y.

MnBi 2 Te 4 has been predicted and observed to be a novel antiferromagnetic topological insulator. However, the melting temperatures of MnBi 2 Te 4 and Bi 2 Te 3 are similar, and they cannot be easily separated. Therefore, single crystal growth techniques need to be optimized. One common method is to grow crystals from a 1:5 mixture of MnTe and Bi 2 Te 3 precursors, but directly mixing Mn, Bi, and Te powders in a stoichiometric ratio has also been implemented experimentally. In this work, we successfully grew high-quality MnBi 2 Te 4 single crystals with a one-step growth method, providing a simpler method and a shorter growth time for high-quality single crystals. The optimized crystal growth condition was using a cooling rate of 0.5 °C/h in the second cooling stage. Different measurements indicated that the synthesized crystals were pure and composed of MnBi 2 Te 4 . Furthermore, magnetotransport measurements showed that the AFM phase transition occurred at T N  = 25.6 K.

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Small · 2024 · IF 13

A new In Situ Oxidized 2D Layered MnBi2Te4 Cathode for High-Performance Aqueous Zinc-Ion Battery

Jiaao Dai,Shaojun Zhang,Fei Wang,Li Wen,Yuhao Sun,Ke Ren,Yaohua Xu,Wei Zeng,Siliang Wang

Recently, aqueous zinc ion batteries (AZIBs) with the superior theoretical capacity, high safety, low prices, and environmental protection, have emerged as a contender for advanced energy storage. However, challenges related to cathode materials, such as dissolution, instability, and structural collapse, have hindered the progress of AZIBs. Here, a novel AZIB is constructed using an oxidized 2D layered MnBi 2 Te 4 cathode for the first time. The oxidized MnBi 2 Te 4 cathode with large interlayer spacing and low energy barrier for zinc ion diffusion at 240 °C, exhibited impressive characteristics, including a high reversibility capacity of 393.1 mAh g −1 (0.4 A g −1 ), outstanding rate performance, and long cycle stability. Moreover, the corresponding aqueous button cell also exhibits excellent electrochemical performance. To demonstrate the application in practice in the realm of flexible wearable electronics, a quasi-solid-state micro ZIB (MZIB) is constructed and shows excellent flexibility and high-temperature stability (the capacity does not significantly degrade when the temperature reaches 100 °C and the bending angle exceeds 150°). This research offers effective tactics for creating high-performance cathode materials for AZIBs.

CAS / MDL: 67-63-0 872-50-4
研究领域: 材料科学 · 能源存储与转换
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ACS Nano · 2024 · IF 15.8

Layered Topological Insulator MnBi2Te4 as a Cathode for a High Rate Performance Aqueous Zinc-Ion Battery

Li Wen,Qixiang Zhang,Junjie Shi,Fei Wang,Siliang Wang,Zhiwei Chen,Yang Yue,Yihua Gao

Recently, the topological insulator MnBi2Te4 has aroused great attention owing to its exotic quantum phenomena and intriguing device applications, but the superior performances of MnBi2Te4 have not been researched in the field of electrochemistry. By theoretical calculations, it is found that MnBi2Te4 exhibits excellent Zn2+ storage and transport properties. Therefore, it is speculated that MnBi2Te4 has excellent electrochemical performance in zinc-ion batteries (ZIBs). In this research, MnBi2Te4 as a pioneer has been explored in ZIBs, showing surprising electrochemical properties. The MnBi2Te4 electrode displays a high average discharge specific capacity (264.8 mA h g–1 at 0.40 A g–1), a competitive cycle life (88.6% of initial capacity after 400 cycles at 4.00 A g–1), and an excellent rate performance (average capacity retention rate of 95.1% from 0.40 to 8.00 A g–1) owing to the fast ion transport of the conductive topological surface state and dissipationless channel of the edge state. Surprisingly, the quasi-solid-state (QSS) MnBi2Te4/Zn battery delivers excellent Zn2+ storage capability and possesses a capacity retention of 79.9% after 1000 cycles at 4.00 A g–1. In addition, the QSS MnBi2Te4/Zn battery can exhibit excellent performance and the GCD curves maintain stability without distortion deformation even at temperatures of 0 and 75 °C.

研究领域: 材料科学 · 电化学 · 能源存储
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