ADVANCED MATERIALS
·
2018
·Vol. 30
·期 22
·1707152
·
IF 21.95
Jiawei Lai,Xin Liu,Junchao Ma,Qinsheng Wang,Kenan Zhang,Xiao Ren,Yinan Liu,Qiangqiang Gu,Xiao Zhuo,Wei Lu,Yang Wu,Yuan Li,Ji Feng,Shuyun Zhou,Jian-Hao Chen,Dong Sun
Photodetectors based on Weyl semimetal promise extreme performance in terms of highly sensitive, broadband and self-powered operation owing to its extraordinary material properties. Layered Type-II Weyl semimetal that break Lorentz invariance can be further integrated with other two-dimensional materials to form van der Waals heterostructures and realize multiple functionalities inheriting the advantages of other two-dimensional materials. Herein, we report the realization of a broadband self-powered photodetector based on Type-II Weyl semimetal T d -MoTe 2 . The prototype metal–MoTe 2 –metal photodetector exhibits a responsivity of 0.40 mA W −1 and specific directivity of 1.07 × 10 8 Jones with 43 μs response time at 532 nm. Broadband responses from 532 nm to 10.6 μm are experimentally tested with a potential detection range extendable to far-infrared and terahertz. Furthermore, we identify the response of the detector is polarization angle sensitive due to the anisotropic response of MoTe 2 . The anisotropy is found to be wavelength dependent, and the degree of anisotropy increases as the excitation wavelength gets closer to the Weyl nodes. In addition, with power and temperature dependent photoresponse measurements, the photocurrent generation mechanisms are investigated. Our results suggest this emerging class of materials can be harnessed for broadband angle sensitive, self-powered photodetection with decent responsivities.
研究领域:
凝聚态物理
·
光电子学
·
量子材料
·
纳米技术
·
二维材料
✓ 已验证
DOI
高影响因子
iScience
·
2021
·
IF 5.458
Wanying Du,Xionghui Jia,Zhixuan Cheng,Wanjing Xu,Yanping Li,Lun Dai
Two-dimensional (2D) semi-conductive transition metal dichalcogenides (TMDCs) have shown advantages for logic application. Complementary metal-oxide-semiconductor (CMOS) inverter is an important component in integrated circuits in view of low power consumption. So far, the performance of the reported TMDCs-based CMOS inverters is not satisfactory. Besides, most of the inverters were made of mechanically exfoliated materials, which hinders their reproducible production and large-scale integration in practical application. In this study, we demonstrate a practical approach to fabricate CMOS inverter arrays using large-area p -MoTe 2 and n -MoS 2 , which are grown via chemical vapor deposition method. The current characteristics of the channel materials are balanced by atomic layer depositing Al 2 O 3 . Complete logic swing and clear dynamic switching behavior are observed in the inverters. Especially, ultra-low power consumption of ∼0.37 nW is achieved. Our work paves the way for the application of 2D TMDCs materials in large-scale low-power-consumption logic circuits.
研究领域:
电子工程
·
材料科学
✓ 已验证
DOI
PubMed
高影响因子
Journal of Materials Chemistry A
·
2016
·Vol. 5
·期 3
·1035-1042
·
IF 8.262
Ming Liu,Zhaojie Wang,Junxue Liu,Guijuan Wei,Jiao Du,Yanpeng Li,Changhua An,Jun Zhang
The synthesis of layered transition metal dichalcogenide nanocrystals with excellent properties in energy conversion and storage has been well documented in the past several years. However, due to the metallic character of Te, the realization of the chemical synthesis of uniform well-defined MoTe2 nanostructures still remains a challenge, especially to achieve metastable 1T′-MoTe2. In this work, we have developed a colloidal chemical strategy for the synthesis of ultrathin 1T′-MoTe2 nanosheets. The as-achieved sample was characterized by a layered-expanded feature with an interlayer distance of 0.723 nm and rich defects. The shapes of 1T′-MoTe2 can be controlled by varying Mo precursors and the reaction atmosphere, where CO plays an essential role in determining the nanosheet feature. Interestingly, the optimized few-layer 1T′-MoTe2 nanosheets can be used as an efficient supercapacitor electrode with specific capacitances of 1393 F g−1 and 714 F g−1 at current densities of 1 A g−1 and 100 A g−1, respectively. An asymmetric 1T′-MoTe2//activated carbon supercapacitor exhibits a maximum specific capacitance of 158.9 F g−1 with an energy density up to 56.4 W h kg−1. To the best of our knowledge, it is the first time that ultrathin MoTe2 nanosheets have been used as ideal electrode materials for supercapacitors. The present work highlights a facile synthetic strategy to realize uniform transition metal telluride nanostructures for enhancing their electrochemical performances.
研究领域:
材料科学
·
电化学
✓ 已验证
产品关联
DOI
高影响因子
Frontiers in Chemistry
·
2022
·
IF 5.545
Lei Yuxi,Xiao Xuefeng,Ma Tianpeng,Li Weiyin,Zhang Huan,Ma Chao
Layered transition metal dichalcogenides (TMDs), such as molybdenum ditelluride (MoTe2), have attracted much attention because of their novel structure-related physicochemical properties. In particular, semi-metallic-phase MoTe2 (1T′) is considered as a competitive candidate for low-cost electrocatalysts for water splitting. However, there are few reports on the simple hydrothermal synthesis of MoTe2 nanostructures compared with other layered TMDs. In this study, a facile one-step hydrothermal process was developed for the fabrication of layered MoTe2, in which uniform nanotubes with a few layers of 1T′ MoTe2 were fabricated at a lower temperature for the first time. The as-obtained MoTe2 nanotubes were fully characterized using different techniques, which revealed their structure and indicated the presence of layered 1T′ nanocrystals. The efficient activity of MoTe2 nanotubes for the electrocatalytic hydrogen evolution reaction (HER) in 0.5 M H2SO4 was demonstrated by the small Tafel slope of 54 mV/dec−1 and endurable ability, which is attributed to the abundant active sites and remarkable conductivity of 1T′ MoTe2 with a few-layer feature. This provides a facile method for the design and construction of efficient layered MoTe2 based electrocatalysts.
研究领域:
材料科学
·
电化学
·
纳米技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Enzi Chen,Qing Zhu,Yaoyu Duan,Junhao Tang,Runze Zhan,Jingwen Huang,Xi Wan,Kun Chen,Shaozhi Deng
Integrating high-quality dielectrics with two-dimensional (2D) transition metal chalcogenides (TMDCs) is crucial for high-performance electronics. However, the lack of dangling bonds on 2D material surfaces complicates direct dielectric deposition. We propose using atomic layer deposition (ALD) to integrate ultrathin high-κ dielectric directly on 1T′-MoTe2 surfaces, facilitating the creation of high-performance back-gated field-effect transistors (FETs). Exploiting 1T′-MoTe2’s natural oxidation in ambient conditions, we directly deposit dense and uniform HfO2 dielectric films below 5 nm, achieving an equivalent oxide thickness (EOT) of 0.97 nm. The resulting back-gate transistors, with a monolayer MoSSe on HfO2/1T′-MoTe2, show a current on/off ratio over 105 and operate at low voltages (<1 V), indicating high gating efficiency and a charge carrier mobility of 2.93 cm2V–1s–1. Additionally, we demonstrate a 6 × 5 bottom-gated array of MoSSe transistors using all-1T′-MoTe2 electrodes, achieving an 86.7% sample yield. Our approach also enables the creation of various integrated logic circuits such as inverters, NAND, and NOR gates. This research offers a feasible method for integrating high-κ dielectric films using industrially compatible ALD processes, providing excellent thickness control, uniformity, and scalability for 2D electronic devices.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2022
·
IF 6.371
Fengjiao Chen,Yong Zhang,Dongyue Wang,Tian Wang,Jianhua Zhang,Dongzhi Zhang
This paper introduces a room temperature NH 3 gas sensor with excellent performance based on cobalt trioxide and molybdenum telluride (Co 3 O 4 -MoTe 2 ) nanocomposite. Co 3 O 4 nanofiber was synthesized by electrospinning, and MoTe 2 nano particle was synthesized by simple hydrothermal method . MoTe 2 , Co 3 O 4 and Co 3 O 4 -MoTe 2 film sensors were prepared on interdigital electrode substrate by drop coating method. X-ray photoelectron spectroscopy (XPS), dispersive spectrometer (EDS), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD) were used to observe the morphology, microstructure, and composition of the prepared nano-materials. The gas sensing performance of the pristine Co 3 O 4 , MoTe 2 and Co 3 O 4 -MoTe 2 composite film sensors were tested at room temperature. The results of experimental research show that the Co 3 O 4 -MoTe 2 gas sensor has better sensing performance for ammonia than the pure sensor, such as high response (56.20%@1ppm), excellent selectivity, good stability, short response/recovery time (7s/7s@1ppm) and low detection limit (26 ppb). The performance enhancement of the Co 3 O 4 -MoTe 2 film sensor was mainly attributed to the p-n heterojunction formed between MoTe 2 and Co 3 O 4 .
研究领域:
材料科学
·
传感器技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Boyuan Di,Xinlu Li,Xiaokun Wen,Wenyu Lei,Xinyue Xu,Wenchao Kong,Haixin Chang,Jia Zhang,Wenfeng Zhang
High-performance p-type atomically thin transistors are fundamental components in CMOS-based digital logic circuits for beyond-silicon electronics. Compared with the recent breakthrough in high-quality semimetal contacts approaching the quantum limit on n-type atomically thin channel transistors, achieving high-performance p-type analogues with high-quality contacts remains challenging, which was mainly hindered by the lack of proper high-work-function metallic electrodes with Fermi level unpinning capacity. Herein, we demonstrate that semimetal TiS2 electrodes prepared with a damage-free transfer process can be a feasible option for p-type atomically thin MoTe2 transistors. Owing to its intrinsic large work function (∼5.3 eV) and high-quality contacts with negligible Schottky barrier at the TiS2/MoTe2 interface, the scaled p-type bilayer MoTe2 transistor with 500 nm channel length and the monolayer transistor with 800 nm channel length exhibit a high on-state current (Ion) of 100 μA/μm with the on/off ratio (Ion/off) over 106 and an Ion of 68 μA/μm with the Ion/off ratio over 107, respectively. Such a demonstration will enable monolithic atomically thin MoTe2-based beyond-silicon electronics via the common CMOS technology.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2021
·
IF 9.229
Li Yang,Hao Wu,Liang Zhang,Gaojie Zhang,Hongda Li,Wen Jin,Wenfeng Zhang,Haixin Chang
The intrinsically nonmagnetic feature of van der Waals (vdW) layered transition-metal dichalcogenide (TMDC) semiconductors limits the spintronic applications of these semiconductors. In this paper, we demonstrate a facile Te flux strategy to induce intrinsic ferromagnetism in the vdW layered 2H-MoTe2 semiconductor by magnetic chromium (Cr) doping. The Curie temperature (Tc) and saturation magnetization (Ms) can be well tuned by adjusting the Cr doping concentration. A notable Tc up to 275 K can be achieved for the vdW layered Cr-doped 2H-MoTe2 bulk crystals, which is much higher than that of recently reported van der Waals ferromagnetic semiconductors (Tc is mostly less than 70 K), in contrast to the diamagnetic feature of the pristine MoTe2. Meanwhile, the highest Ms of the vdW layered Cr-doped 2H-MoTe2 bulk crystals can reach 4.78 emu g–1, which is stronger than most values reported for magnetic-element-doped van der Waals materials. In addition, all of the as-grown semiconducting Cr-doped 2H-MoTe2 (Cr-2H-MoTe2) single crystals display a large magnetic anisotropy with an out-of-plane easy axis of magnetization. The observed ferromagnetism in the Cr-2H-MoTe2 has intrinsic characteristics, which can be mainly attributed to the spin polarization caused by Cr doping as confirmed by the density functional theory (DFT) calculations. Our approach offers an avenue to tune the ferromagnetism in the vdW layered semiconductor and explore its diverse spintronic and magnetoelectric applications.
研究领域:
材料科学
·
凝聚态物理
·
自旋电子学
✓ 已验证
DOI
高影响因子
Nature Physics
·
2016
·Vol. 12
·期 12
·1105-1110
·
IF 18.791
Deng Ke,Wan Guoliang,Deng Peng,Zhang Kenan,Ding Shijie,Wang Eryin,Yan Mingzhe,Huang Huaqing,Zhang Hongyun,Xu Zhilin,Denlinger Jonathan,Fedorov Alexei,Yang Haitao,Duan Wenhui,Yao Hong,Wu Yang,Fan Shoushan,Zhang Haijun,Chen Xi,Zhou Shuyun
Weyl semimetal is a new quantum state of matter1,2,3,4,5,6,7,8,9,10,11,12 hosting the condensed matter physics counterpart of the relativistic Weyl fermions13 originally introduced in high-energy physics. The Weyl semimetal phase realized in the TaAs class of materials features multiple Fermi arcs arising from topological surface states10,11,14,15,16 and exhibits novel quantum phenomena, such as a chiral anomaly-induced negative magnetoresistance17,18,19 and possibly emergent supersymmetry20. Recently it was proposed theoretically that a new type (type-II) of Weyl fermion21,22 that arises due to the breaking of Lorentz invariance, which does not have a counterpart in high-energy physics, can emerge as topologically protected touching between electron and hole pockets. Here, we report direct experimental evidence of topological Fermi arcs in the predicted type-II Weyl semimetal MoTe2 (refs 23,24,25). The topological surface states are confirmed by directly observing the surface states using bulk- and surface-sensitive angle-resolved photoemission spectroscopy, and the quasi-particle interference pattern between the putative topological Fermi arcs in scanning tunnelling microscopy. By establishing MoTe2 as an experimental realization of a type-II Weyl semimetal, our work opens up opportunities for probing the physical properties of this exciting new state.
研究领域:
凝聚态物理学
·
量子材料
·
拓扑材料
·
表面科学
✓ 已验证
DOI
高影响因子
ADVANCED MATERIALS
·
2023
·Vol. 35
·期 16
·2208800
·
IF 29.4
Tianyang Wang,Xuan Luo,Jingjing Gao,Zhongzhu Jiang,Wei Wang,Xingcai Yang,Nan Zhou,Xiaoguang Zhu,Lei Zhang,Wenjian Lu,Wenhai Song,Hongyan Lv,Yuping Sun
Weyl semimetal T d -MoTe 2 has recently attracted much attention due to its intriguing electronic properties and potential applications in spintronics. Here, Fe-intercalated T d -Fe x MoTe 2 single crystals (0 < x < 0.15 ) are grown successfully. The electrical and thermoelectric transport results consistently demonstrate that the phase transition temperature T S is gradually suppressed with increasing x . Theoretical calculation suggests that the increased energy of the T d phase, enhanced transition barrier, and more occupied bands in 1T′ phase is responsible for the suppression in T S . In addition, a ρ α –ln T behavior induced by Kondo effect is observed with x ≥ 0.08, due to the coupling between conduction carriers and the local magnetic moments of intercalated Fe atoms. For T d -Fe 0.15 MoTe 2 , a spin-glass transition occurs at ≈10 K. The calculated band structure of T d -Fe 0.25 MoTe 2 shows that two flat bands exist near the Fermi level, which are mainly contributed by the d yz and d x 2 − y 2 ${{\rm{d}}_{{x^2} - {y^2}}}$ orbitals of the Fe atoms. Finally, the electronic phase diagram of T d -Fe x MoTe 2 is established for the first time. This work provides a new route to control the structural instability and explore exotic electronic states for transition-metal dichalcogenides.
研究领域:
凝聚态物理
·
材料科学
·
量子材料
·
自旋电子学
·
电子输运
✓ 已验证
DOI
高影响因子
ACS Nano
·
2025
·
IF 16
Yao Yao,Yue Zhao,Huijuan Zhang,Wenting Pan,Wei Liang,Yijian Jiang,Xinlong Yan,Yinzhou Yan
The development of surface-enhanced Raman spectroscopy (SERS) as an ultrasensitive fingerprint analysis technique in precision medicine requires high-performance SERS substrates with controllable nanostructure (hot-spot) distribution, simple fabrication, superior stability, biocompatibility, and extraordinary optical responses. Unfortunately, fabrication of arbitrary nanostructures with high homogeneity on a large scale for SERS is still challenging. Herein, we report an ultrafast laser parallel fabrication protocol for Au/2D-transition-metal dichalcogenide hybrid SERS biosensors. The leveraged photonic nanojets (PNJs) are generated by a micron-sized microsphere monolayer to simultaneously trigger localized phase transition in 2H-MoTe2, achieving a 1T′-MoTe2 nanopattern array with a density of 1 million per mm2 by a single laser shot. The Au nanoparticle clusters (AuNCs) are subsequently grown in situ from the 1T′ regions, creating a AuNCs on 1T′/2H-MoTe2 (AuNCs@1T’/2H-MoTe2) hybrid SERS substrate. The fabricated feature diameter and overlay accuracy of the patterned AuNCs are 210.1 ± 3.4 and 9.2 ± 1.7 nm, respectively. To eliminate background noise, we designed dimer-AuNCs@1T′/2H-MoTe2 (dAuNCs@1T′/2H-MoTe2), achieving a detection limit of 10–13 M with an enhancement factor of 4.9 × 108 for the methylene blue (MB) analyte. The strong localized surface plasmon resonances in the dAuNCs as well as efficient charge transfers between Au, 2H-MoTe2, and MB contribute to the majority of Raman enhancement. The multiscale dAuNCs@1T′/2H-MoTe2 array provides a powerful SERSome (comprising multiple SERS spectra) platform for therapeutic drug monitoring, by which we successfully identified the metabolic behaviors of living gastric adenocarcinoma cells administered with two drugs, i.e., capecitabine, oxaliplatin, and their combination. The present work establishes opportunities for creating a highly ordered nanopattern array for ultrasensitive SERSome analysis of cell metabolism in cancer therapy.
研究领域:
纳米技术
·
生物医学工程
·
分析化学
·
癌症研究
·
材料科学
·
光学与光子学
·
精准医学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ChemistrySelect
·
2022
·Vol. 7
·期 33
·e202201722
·
IF 2.307
Jiameng Wang,Baohua Chen,Wuyi Zhang,Yifeng Wu,Lanlan Chen,Jia Wen,Hongyuan Yan
Graphical The properties of MoS 2 , MoSe 2 and MoTe 2 on the glucose sensing were systemically explored and compared. The three kinds of exfoliated TMDs modified electrodes possessed a low detection limit, an outstanding specificity and acceptable specificity. Two-dimensional transition-metal dichalcogenides (TMDs) have attracted widespread interests owing to their attractive physical and chemical properties. In particular, they are especially attractive in the field of electrochemical biosensors. In this study, the properties of TMDs ((molybdenum sulfide (MoS 2 ), molybdenum diselenide (MoSe 2 ) and molybdenum telluride (MoTe 2 )) on the glucose sensing were explored and compared. Exfoliated MoS 2 , MoSe 2 and MoTe 2 nanosheets with basically the same size were fabricated through controlling the ultrasonic power. The structure and morphological characteristics of MoS 2 , MoSe 2 and MoTe 2 were examined through scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy and powder X-ray diffractometer. Electrochemical properties were analyzed through cyclic voltammetry and differential pulse voltammetry. Results showed that all the three kinds of TMDs can enhance the electroconductibility of the electrodes. When incorporated into the construction of electrochemical biosensors for glucose detection, all of the three kinds of exfoliated TMDs modified electrodes possessed achieved analytical requirements of selectivity, wide linear ranges, as well as low limits of detection and quantification. In particular, MoS 2 -based biosensor generated a higher specificity and lower detection limit than that of MoSe 2 and MoTe 2 . This is imperative to showcase the real potential of TMDs in electrochemical biosensors.
研究领域:
材料科学
·
纳米技术
·
分析化学
·
生物传感器
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）