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NIR pc-LED
ACS Applied Materials & Interfaces · 2025 · IF 8.2

Near-Infrared Luminescence of Cr3+-Doped Ba2NaNb5O15 Embedded in Transparent Glass-Ceramics as Solid-State Illumination for Night-Vision Imaging

Wenbo Ji,Fengmei Zhu,Yuan Gao,Jianbei Qiu

Near-infrared phosphor-converted light-emitting diodes (NIR pc-LEDs), a widely used NIR light source, are typically prepared by sealing the NIR phosphor powder and an LED chip with epoxy resin. One issue that NIR pc-LEDs frequently encounter is the aging and deterioration of epoxy resin over time, which leads to self-absorption and a sharp decline in emission efficiency. Here, we report the synthesis of a chemically stable NIR luminescent material composed of Cr3+-doped Ba2NaNb5O15 nanocrystals measuring 10–15 nm, with Cr3+ ions located in the octahedral centers of the nanocrystals. Under 460 nm light excitation, the transparent glass-ceramic exhibited a broadband NIR emission in the range of 600–1400 nm, which originated from the electronic transition of Cr3+ from the excited state of 4T2 to the ground state of 4A2. The emission peak was located at ∼810 nm, the FWHM was ∼230 nm, and the internal quantum efficiency reached ∼0.81%. We constructed a stable NIR pc-LED device using optimized transparent NIR-emitting glass-ceramics and a commercially available blue LED chip, demonstrating its promising application in night-vision lighting. Our study provides a basis for the preparation of transparent glass-ceramic-based NIR pc-LED devices as an improved alternative for solid-state illumination.

研究领域: 材料科学 · 光学工程 · 固体照明
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CERAMICS INTERNATIONAL · 2025 ·Vol. 51 ·期 14 ·18513-18519 · IF 5.6

Broadband near-infrared phosphor SrGe4O9:Cr3+ for NIR-pc-LED applications

Haixia Zheng,Zhongxiang Shao,Faling Ling,Li Li,Guotao Xiang,Yongjie Wang,Xianju Zhou

The effectiveness of near-infrared phosphor-converted light-emitting diodes (NIR pc-LEDs) is primarily determined by the NIR phosphors. Unfortunately, there is still a shortage of effective broadband near-infrared luminescent materials which emit NIR light with wavelengths exceeding 800 nm. Herein, Cr 3+ doped SrGe 4 O 9 phosphors were prepared by a high-temperature solid-state reaction. The phosphor exhibits a wide NIR emission spanning from 650 to 1250 nm, with the center located at approximately 846 nm. It demonstrates a full width at half maximum (FWHM) of 190 nm and a quantum yield of 66.9 % when excited by the blue light at 442 nm. When subjected to 373 K, the luminescence intensity of the phosphor remains above 80 % of the value at room temperature . The application in night vision and biological imaging have been realized by the prepared SrGe 3.99 O 9 : 1%Cr 3+ phosphor combined with a commercial 440 nm blue chip.

研究领域: 材料科学 · 光电子学 · 光子学 · 发光材料 · 固态照明
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Laser & Photonics Reviews · 2022 ·Vol. 16 ·期 7 ·2200012 · IF 10.947

Rapid Nondestructive Detection Enabled by an Ultra-Broadband NIR pc-LED

Hao Suo,Yu Wang,Xiaoqi Zhao,Xin Zhang,Leipeng Li,Kuiwen Guan,Wenge Ding,Panlai Li,Zhijun Wang,Feng Wang

The rapid development of near-infrared (NIR) spectroscopic techniques has greatly stimulated the discovery of novel broadband NIR-emitting phosphors as advanced light sources. Herein, a novel double-perovskite phosphor La 2 MgHfO 6 :Cr 3+ /Yb 3+ that displays ultra-broadband NIR emissions with a full-width at half maximum (FWHM) of 333 nm is reported. The remarkable luminescence property stems from the multiple crystallographic sites, relatively weak crystal field, and efficient Cr 3 -to-Yb 3+ energy transfer (ET). The site occupation of Cr 3+ is elaborately verified by the Rietveld refinement and first-principles calculation. By controlling the ET process, the internal/external quantum efficiency (IQE/EQE), bandwidth, and thermal stability of NIR emissions are substantially improved. The as-prepared phosphors are further integrated into a miniaturized NIR light-emitting diode (LED) package, demonstrating superior performance in rapid nondestructive detection of structural failure in thin electronic cables. The results described here provide a novel pointcut for designing broadband NIR-emitting phosphors with desired optical properties toward applications in industrial inspection and medical diagnosis.

研究领域: 材料科学 · 光学工程 · 工业检测
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DYES AND PIGMENTS · 2024 · IF 4.1

UV- and X-ray-activated broadband NIR garnet-type Ca3Ga2Sn3O12:Fe3+ phosphors with efficient persistent luminescence

Yongjie Wang,Qingzhou Bu,Dongshuo Li,Shuai Yang,Li Li,Guotao Xiang,Sha Jiang,Ying Chang,Chuan Jing,Xianju Zhou,Lev-Ivan Bulyk,Andrzej Suchocki

Near-infrared phosphor-converted light-emitting diodes (NIR pc-LEDs) are compact light sources of great interest for NIR spectroscopy applications. Beyond typical Cr 3+ -activated NIR-emitting phosphors, there exists a strong demand for Cr 3+ -free alternatives with high efficiency and broadband emission to rich the landscape of NIR luminescent materials and extend their range of application fields. Here, we report a series of Fe 3+ -activated Ca 3 Ga 2 Sn 3 O 12 garnet-type phosphors exhibiting broadband NIR emission in the 650–1000 nm range attributed to 4 T 1 (G) → 6 A 1 (S) transition, with a maximum at 754 nm and a FWHM of 89 nm upon UV excitation. The spectroscopic results were analyzed according to the Tanabe-Sugano theory from which the crystal field parameter D q and Racah parameters B and C were obtained for the octahedrally coordinated Fe 3+ ion. Notably, the NIR persistent luminescence lasting over 1 h was detected following UV or X-ray irradiation. The possible mechanism involving electron traps was proposed to explain the observed persistent luminescence. Furthermore, a NIR pc-LED was fabricated by coating synthesized phosphor on a UV chip, and its performance was evaluated to assess its potential suitability as a NIR light source. Our discovery of novel type of nontoxic Fe 3+ -activated broadband NIR luminescence phosphors with efficient NIR persistent luminescence paves the way for discovering Cr 3+ -free multifunctional NIR luminescence materials, thereby expanding their application possibilities.

研究领域: 材料科学 · 光学 · 光电子学
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CERAMICS INTERNATIONAL · 2023 · IF 5.2

Broadband near-infrared double-perovskite phosphor Sr2ScTaO6:Cr3+, Yb3+ for NIR pc-LED applications

Zhongxiang Shao,Xianju Zhou,Li Li,Yongjie Wang,Faling Ling,Chuan Jing,Xiao Tang,Zhongmin Cao

The broadband near-infrared (NIR) phosphor converted light emitting diode (NIR pc-LED) has garnered unprecedented attention due to its crucial role in NIR applications. However, there remains a scarcity of efficient broadband NIR luminescence materials capable of emitting NIR light with wavelengths greater than 800 nm. This study reports the synthesis, crystal structure and photoluminescence (PL) properties for double perovskite Sr 2 ScTaO 6 :Cr 3+ phosphors which exhibit a broadband NIR emission in the 650–1250 nm range, peaking at∼815 nm with the full width at half maximum (FWHM) of 161 nm. The observed broadband emission arises from two distinct Cr 3+ centers, namely Sc 3+ and Ta 5+ octahedral sites within the Sr 2 ScTaO 6 structure, as demonstrated by luminescence and decay kinetic analysis. A significant enhancement of the thermal stability and a remarkable broadening of the FWHM (from 161 to 275 nm) are achieved by employing Yb 3+ co-doping strategy. The efficient energy transfer from Cr 3+ to Yb 3+ was confirmed through emission and excitation spectra, as well as luminescence decay measurements. Finally, Sr 2 ScTaO 6 :Cr 3+ -Yb 3+ phosphor was integrated with a 470 nm blue LED chip to fabricate a NIR pc-LED device, and its potential application in night vision was evaluated.

研究领域: 材料科学 · 光学工程 · 发光材料
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CERAMICS INTERNATIONAL · 2024 · IF 5.1

Ruddlesden-Popper type Sr(La,Gd)2Al2O7:Cr3+ layered perovskite new phosphors for NIR pc-LED application

Zhiyuan Pan,Sihan Feng,Fan Li,Xuejiao Wang,Qi Zhu,Ji-Guang Li

Near-infrared phosphor converted light-emitting diodes (NIR pc-LEDs), as a state-of-the-art type of NIR sources, are finding multifaceted applications, where phosphor is a crucial component. In hope to provide new choices for NIR lighting, we synthesized in this work the two series of Ruddlesden -Popper type layered perovskite phosphors of SrLa 2 Al 2- x O 7 : x Cr 3+ ( x  = 0–0.02) and SrLa 2- y Gd y Al 1.984 O 7 :0.016Cr 3+ ( y  = 0–2), followed by detailed structure and luminescence investigation. SrLa 2 Al 2- x O 7 : x Cr 3+ was found to emit ∼700–800 nm NIR light under UV excitation and be able to maintain ∼54.3 % of its room temperature intensity at 423 K, which is remarkably higher than those (∼25–30 %@423 K) of the Mn 4+ activated perovskite NIR phosphors. Luminescence regulation was achieved by substituting La 3+ with Gd 3+ , and it was revealed that Gd 3+ may act as a sensitizer to significantly enhance Cr 3+ luminescence (∼346 % at 77 K) through Gd 3+ → Cr 3+ energy transfer, which was confirmed by spectral and fluorescence lifetime analysis. The observed spectral features and the influence of Gd 3+ were rationalized by considering crystal structure, local coordination, and crystal field. Finally, an NIR pc-LED device showing strong ∼700–900 nm luminescence was fabricated to show potential application of the phosphor in night vision and plant lighting.

CAS / MDL: 1344-28-1 1308-38-9
研究领域: 材料科学 · 光学工程
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ACS Applied Optical Materials · 2024 · IF 0

A High-Efficiency NIR-II Emitting LiAlSiO4:Cr/Ni Phosphors through Violet Excitation for NIR pc-LED Application

Yonghang Li,Yang Lu,Haonan Ju,Wei Wang,Dong Tu,Hongyu Lu,Jiayu Wang,Hua Zou

Near-infared phosphor-converted light-emitting diodes (NIR pc-LEDs) are next-generation NIR light sources due to their long life, low cost, and compactness. Unfortunately, there is a lack of efficient NIR-II phosphors with high efficiency and large full width at half-maximum (fwhm) that can be excited by violet LED. Here, a series of Cr3+/Ni2+-codoped LiAlSiO4 with unprecedented emission peaking at 1150 nm (∼1000–1400 nm, fwmh ∼191 nm) were synthesized via a solid-state reaction. More importantly, the phosphors exhibit high efficiency and excellent thermal stability under violet emission excitation. Moreover, the NIR pc-LED devices as a NIR-II light source have been fabricated through a combination violet LED and optimized LiAlSiO4:Cr3+/Ni2+ phosphors, which are well applied to high-penetration imaging and nondestructive fruit damage inspection. These results indicate that the LiAlSiO4:Cr3+/Ni2+ phosphors have great potential applications as NIR light sources.

研究领域: 材料科学 · 光学工程 · 电子器件
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INORGANIC CHEMISTRY COMMUNICATIONS · 2026 · IF 5.9

Spectral broadening and enhanced ultra-broadband emission in Ca3TiTaGa3O12:Cr3+, Yb3+ co-doped phosphor for NIR pc-LED applications

Yichen Yang,Xiaojiao Kang,Qiwen Pan,Zhennan Zhu,Wei Lü

Broadband near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) are gaining significant interest due to their potential in spectroscopic applications. NIR phosphors play a critical role in pc-LED devices by converting visible light into NIR emission with high stability and tunability. In this study, an efficient broadband NIR phosphor, Ca 3 TiTaGa 3 O 12 :Cr 3+ , is developed and systematically investigated. Ca 3 TiTaGa 3 O 12 :Cr 3+ exhibits a broad NIR emission band centered at 790 nm with a full width at half maximum (FWHM) of 202 nm upon 450 nm blue light excitation. The emission bandwidth is further expanded to 303 nm by introducing an optimal amount of Yb 3+ co-doping, which produces a merged ultra-broadband Cr 3+ –Yb 3+ emission. Luminescence and decay kinetic analysis reveal that the resultant ultra-broadband emission originates from effective energy transfer Cr 3+ to Yb 3+ . Moreover, the Yb 3+ co-doping enhances the internal quantum efficiency from 30.5% to 41.3%, and improves thermal stability with emission retention increasing from 42.6% to 57.4% at 150 °C. The Ca 3 TiTaGa 3 O 12 :Cr 3+ and Ca 3 TiTaGa 3 O 12 :Cr 3+ , Yb 3+ phosphors are successfully integrated with a 450 nm blue LED chip, demonstrating their potential for practical NIR pc-LED device applications in night vision and bioimaging.

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JOURNAL OF RARE EARTHS · 2024 · IF 5.2

A novel KSrScSi2O7:xCr silicate phosphor, luminescence/chromaticity, and applications in NIR pc-LED and stable green ceramic pigments

Sihan Yang,Xuyan Xue,Feng Jiang,Liang Dong,Qi Zhu,Xuejiao Wang,Ji-Guang Li

The emission wavelength of current near-infrared phosphors activated by Cr 3+ is generally smaller than 900 nm in near-infrared (NIR) I region, and it is extremely challenging and is of great practical significance to realize emission towards NIR-II region. In this study, a novel Cr 3+ excited KSrScSi 2 O 7 silicate broad-band phosphor was prepared using the traditional solid-state method. Cr 3+ resides in a weak crystal field in the KSrScSi 2 O 7 lattice and exhibits broad-band near-infrared emission at 984 nm, longer than those of most Cr 3+ activated phosphors, under 493 nm blue light excitation. This is due to the strong charge polarization caused by the unique local coordination environment of the silicate matrix, which leads to a reduction in the crystal field splitting energy of the [ScO 6 ] octahedron where Cr 3+ is located and the downward shift of the 4 T 2 energy level. The optimal doping concentration of Cr 3+ is found to be 2 mol%, and the quenching mechanism is dipole-dipole interaction. Compared to the phosphors with similar emission wavelengths ( λ em > 900 nm), KSrScSi 2 O 7 :Cr 3+ demonstrates outstanding advantages in various aspects of luminescent performance. The fabricated phosphor-converted light-emitting diode (pc-LED) is shown to have the potential for night vision and non-invasive imaging. Novel application of KSrScSi 2 O 7 : x Cr 3+ as stable green ceramic pigments is also explored. The KSrScSi 2 O 7 : x Cr 3+ powders show a bright yellowish green appearance, and the KSrScSi 2 O 7 :0.02Cr 3+ typical composition has chromaticity values of L* = 82.73, a* = –8.53, b* = 7.97. Remarkably, the glazing samples using KSrScSi 2 O 7 : x Cr 3+ as pigments well retain the bright color after 1200 °C sintering in different atmospheres. Therefore, multi-functional applications of KSrScSi 2 O 7 : x Cr 3+ for near-infrared spectroscopy and as ceramic pigments are achieved in this work.

研究领域: 材料科学 · 光学 · 陶瓷科学
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Advanced Optical Materials · 2021 ·Vol. 10 ·期 4 ·2102229 · IF 9.926

Efficient Ultra-Broadband Ga4GeO8:Cr3+ Phosphors with Tunable Peak Wavelengths from 835 to 980 nm for NIR pc-LED Application

Leqi Yao,Qiyue Shao,Meiling Shi,Tianqi Shang,Yan Dong,Chao Liang,Jinhua He,Jianqing Jiang

Near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) hold great potential for applications ranging from night vision to non-destructive detection. However, it remains a long-standing challenge to develop NIR phosphors simultaneously with longer-wavelength broadband emissions and higher efficiency. Herein, ultra-broadband Ga 4 GeO 8 :Cr 3+ (GGO:Cr 3+ ) phosphors are developed, with the NIR emission covering 700–1300 nm. Furthermore, tunable emission bands peaking from 835 to 980 nm are achieved simply by varying the Cr 3+ concentration. Particularly, emission maxima (λ max ) of GGO: x Cr 3+ shift from 850 to 900 nm without intensity loss when increasing x values between 0.02 and 0.10. An internal quantum yield of 60% is achieved for GGO:0.02Cr 3+ (λ max ≈ 850 nm, full width at half maximum (FWHM) ≈215 nm). The origin of tunable ultra-broadband emissions of GGO:Cr 3+ is revealed on the basis of structural and time-resolved spectroscopic analysis. The pc-LED fabricated by GGO:0.02Cr 3+ exhibits a maximum NIR output power of ≈56 mW at 400 mA drive current, and its application in high-penetration quality analysis of fruits is also demonstrated. The results indicate that GGO:Cr 3+ phosphors have high promise for practical applications in NIR pc-LED devices.

研究领域: 材料科学 · 光电子学 · 光子学 · 固态照明 · 光谱学
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MOLECULES · 2023 ·Vol. 28 ·期 24 ·8059 · IF 4.6

Achieving Luminescence of Sr3Ga1.98In0.02Ge4O14:0.03Cr3+ via [In3+] Substitution [Ga3+] and Its Application to NIR pc-LED in Non-Destructive Testing

Tao Wang,Bingkai Gao,Jiehong Li,Zhijun Wang,Panlai Li

Cr3+-doped Sr3Ga2Ge4O14:0.03Cr3+(SGGO:0.03Cr3+) phosphor was synthesized via a high-temperature solid-phase method. Considering the tunable structure of SGGO, Ga3+ions in the matrix were substituted with In3+ions at a certain concentration. The tuned phosphor produced a red-shifted emission spectrum, with its luminescence intensity at 423 K maintained at 63% of that at room temperature; moreover, the internal quantum efficiency increased to 65.60%, and the external quantum efficiency correspondingly increased to 21.94%. On this basis, SGIGO:0.03Cr3+was encapsulated into apc-LED, which was applied in non-destructive testing (NDT) experiments, successfully realizing the recognition of water and anhydrous ethanol, proving its potential application in the field of NDT.

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CERAMICS INTERNATIONAL · 2024 · IF 5.1

Near-infrared luminescence in Ca3ZnMGe3O12:Cr3+ (M = Zr, Hf, Sn, Ti) garnet family for light-emitting diode applications

Chao Li,Ying Li,Yi Xu,Jiyou Zhong

Near-infrared (NIR) phosphors as crucial components of NIR light sources have multifunctional and smart spectroscopy applications, prompting an increasing research interest in developing efficient and stable NIR materials. Focusing on this issue, the present study explored the luminescent properties of Cr 3+ -doped Ca 3 ZnMGe 3 O 12 (M = Zr, Hf, Sn and Ti) garnet family. These materials exhibit an emission peak falls within the range of 785–805 nm with a full width at half maximum (FWHM) varying from 114 to 123 nm. Among them, the Ca 3 ZnZrGe 3 O 12 :Cr 3+ phosphor shows the highest photoluminescence quantum yield (PLQY = 60.3 %) and an excellent thermal stability ( I 423K / I 298K  = 77.51 %). Moreover, the performance of a prototype Ca 3 ZnZrGe 3 O 12 :Cr 3+ -containing NIR pc-LED device was estimated, which achieves an NIR output of 23.46 mW and a photonic efficiency of 14.09 % under 100 mA driving current. Non-destructive examination can be realized using this light source, demonstrating the good potential of the material in NIR spectroscopy applications.

研究领域: 材料科学 · 光电技术 · 光子学
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