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NITE-SiC
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY · 2023 · IF 5.7

Joining of SiC ceramics by combining NITE-SiC interlayer and its thickness control

Chuang-Tian Zhan,Sheng-Jin He,Wei-Ming Guo,Yuan-Bin Chen,Shi-Kuan Sun,Hua-Tay Lin

Combined with the thickness control of interlayers (∼10 µm and ∼60 µm), SiC nano-powders with Al 2 O 3 -Y 2 O 3 -MgO-CaO additive (NITE-SiC) were used as the joining materials to achieve the low-temperature joining of SiC ceramics. Some residual pores were observed in the interlayer with a thickness of ∼60 µm after joining at 1650 ℃, and the shear strength of SiC joints measured was 39.3 ± 5.5 MPa. Observations showed the fracture of joints occurred at the interlayer. When the thickness of the interlayer decreased to ∼10 µm, no cracks or porosity were observed at the interface region after joining at 1650 ℃. The shear strength of SiC joints increased to 69.5 ± 8.9 MPa, and the fracture originated from the matrix. The results demonstrated using NITE-SiC with Al 2 O 3 -Y 2 O 3 -MgO-CaO additive as the joining layer and reducing the thickness of the interlayer could lower the joining temperature and significantly improve the mechanical strength of joints.

CAS / MDL: 1305-78-8
研究领域: 材料科学 · 陶瓷工程
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CERAMICS INTERNATIONAL · 2025 · IF 5.6

Synergistic enhancement of densification efficiency and radiation resistance in NITE-SiC via nitrogen-doped quaternary additives

Zhiyuan Wang,Ce Zheng,Hongru Jin,Yichun Bi,Shengkai Wang,Xiaoqiang Li

This study investigates the densification, mechanical properties, and irradiation response of NITE-SiC fabricated using two low-content quaternary sintering additive systems: AlN-Y 2 O 3 -CeO 2 -MgO (AN-SiC) and Al 2 O 3 -Y 2 O 3 -CeO 2 -MgO (AO-SiC). The incorporation of nitrogen significantly enhances densification by increasing liquid phase viscosity, thereby suppressing additive evaporation and enabling >99.5 % relative density. Multi-cation doping (Y, Ce, Mg, Al) into the Y 2 Si 2 O 7 intergranular phase reduces eutectic temperature and promotes homogeneous sintering. Under irradiation to 7–8 dpa at 550–750 °C, both systems exhibit exceptional stability, attributed to the highly ionic Y 2 Si 2 O 7 structure resisting amorphization and accommodating dopants without segregation. Damage remains dominated by intragranular defect evolution in SiC grains, while AN-SiC demonstrates reduced radiation hardening and enhanced modulus recovery, highlighting the synergistic role of nitrogen in improving sintering and radiation resistance for Gen-IV reactor applications.

研究领域: 材料科学 · 核材料 · 陶瓷工程 · 辐照效应 · 烧结技术
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