Ion Sputtering–Assisted Double-Side Interfacial Engineering for CdIn2S4 Photoanode toward Improved Photoelectrochemical Water Splitting
Due to its suitable band energy level and small band gap, CdIn 2 S 4 is a promising photoanode for photoelectrochemical (PEC) water splitting. Nevertheless, the serious charge recombination at the back contact and photoelectrode/electrolyte interface severely hinders its PEC activity. Herein, a facile magnetron ion-sputtering strategy is adopted to fabricate TiO 2 underlayer and NiO overlayer to modify both sides of CdIn 2 S 4 photoanode. The TiO 2 underlayer serves as an electron transport layer to promote electrons transfer from CdIn 2 S 4 to fluorine-doped tin oxide substrate and hinder holes' transportation, thus suppressing the charge recombination at the back contact. NiO, as a p-type semiconductor, forms a p-n heterojunction with CdIn 2 S 4 , inducing a built-in electric field to facilitate charge transport. Meanwhile, NiO overlayer acts as a co-catalyst to enhance surface reaction kinetics, and thereby improves the carrier injection efficiency at photoelectrode/electrolyte interface. As a result, the optimum TiO 2 /CdIn 2 S 4 /NiO photoanode exhibits photocurrent as high as 0.6 mA cm −2 at 1.23 V versus reversible hydrogen electrode, which is about 2.3 times that of bare CdIn 2 S 4 . This work provides an effective strategy to manipulate the charge carrier dynamics to improve the PEC activity of photoanode.
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